onsemi-MJE15032G
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MJE15032 (NPN),
MJE15033 (PNP)
Complementary Silicon
Plastic Power
T
r
ansistors
Designed for use as high−frequency drivers in audio amplifiers.
Features
•
High DC Current Gain
•
High Current Gain − Bandwidth Product
•
TO−220 Compact Package
8.0 AMPERES
POWER TRANSISTORS
COMPLEMENTARY SILICON
250 VOLTS, 50 WATTS
•
Epoxy Meets UL 94 V−0 @ 0.125 in
•
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
COMPLEMENTARY
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current
Symbol
Value
250
250
5.0
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
COLLECTOR
2, 4
COLLECTOR
2, 4
V
CEO
V
CB
EB
V
1
1
BASE
BASE
I
C
8.0
I
16
CM
3
3
EMITTER
EMITTER
I
B
2.0
T
o
tal Power Dissipation
P
P
D
MARKING
DIAGRAM
@ T
= 25
_
C
50
0.40
W
W/
_
C
C
Derate above 25
_
C
T
o
tal Power Dissipation
D
@ T
= 25
_
C
2.0
0.016
W
W/
_
C
_
C
A
4
Derate above 25
_
C
Operating and Storage Junction
T
e
mperature Range
T , T
–
6
5 to
+
1
50
J
stg
MJE1503xG
AYWW
TO−220
CASE 221A
STYLE 1
ESD − Human Body Model
ESD − Machine Model
HBM
MM
3B
C
V
V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1
2
3
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
2.5
Unit
MJE1503x = Specific Device Code
Thermal Resistance,
Junction−to−Case
R
_
C/W
x
= 2 or 3
q
JC
A
Y
= Assembly Location
=
Y
e
ar
Thermal Resistance,
Junction−to−Ambient
R
_
C/W
q
JA
WW
G
= Work Week
= Pb−Free Package
62.5
ORDERING INFORMATION
Device
Package
Shipping
MJE15032G
TO−220
50 Units/Rail
(Pb−Free)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting
T
e
chniques
Reference Manual, SOLDERRM/D.
MJE15033G
TO−220
(Pb−Free)
50 Units/Rail
©
Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
December, 2014 − Rev. 6
MJE15032/D
MJE15032 (NPN), MJE15033 (PNP)
ELECTRICAL CHARACTERISTICS
(T =
25
_
C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
V
Vdc
m
Adc
m
Adc
CEO(sus)
(I =
10 mAdc, I
= 0)
250
−
−
C
B
Collector Cutoff Current
(V =
250 Vdc, I
= 0)
I
CBO
10
10
CB
E
Emitter Cutoff Current
(V =
5.0 Vdc, I
= 0)
I
EBO
−
BE
C
DC Current Gain
h
FE
−
(I =
0.5 Adc, V
= 5.0 Vdc)
C
CE
70
50
10
−
−
−
(I =
1.0 Adc, V
= 5.0 Vdc)
C
CE
(I =
2.0 Adc, V
= 5.0 Vdc)
C
CE
Collector−Emitter Saturation Voltage
(I =
1.0 Adc, I
= 0.1 Adc)
V
Vdc
Vdc
CE(sat)
−
−
0.5
1.0
C
B
Base−Emitter On Voltage
(I =
1.0 Adc, V
= 5.0 Vdc)
V
BE(on)
C
CE
DYNAMIC CHARACTERISTICS
f
T
MHz
(I =
500 mAdc, V
= 10 Vdc, f
= 1.0 MHz)
30
−
C
CE
test
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse
T
e
st: Pulse Width
≤
300
m
s, Duty Cycle
≤
2.0%.
2. f =
⎪
h
⎪•
f .
test
T
fe
2
MJE15032 (NPN), MJE15033 (PNP)
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
P
(pk)
Z
= r(t) R
q
JC
q
JC(t)
0.05
0.02
0.07
0.05
R
= 2.5
°
C/W MAX
q
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t
1
0.03
0.02
READ TIME AT t
t
2
1
T
– T
= P
C
Z
q
(pk) JC(t)
0.01
J(pk)
DUTY CYCLE, D = t
/t
1 2
SINGLE PULSE
0.05
0.01
0.01
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500 1.0
k
0.02
t, TIME (ms)
Figure 1. Thermal Response
100
10
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
100
m
s
breakdown. Safe operating area curves indicate I
− V
C
CE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation then the curves indicate.
50ꢀms
250ꢀms
10ꢀms
1.0
T is
variable depending on conditions. Second breakdown
C
= 150
_
C;
J(pk)
pulse limits are valid for duty cycles to 10% provided T
J(pk)
0.1
< 150
_
C. T
J(pk)
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
0.01
1.0
10
100
1000
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 2. MJE15032 & MJE15033
Safe Operating Area
T
A
T
C
3.0 60
2.0 40
T
C
T
A
1.0 20
0
0
0
20
40
60
80
100
120
140
160
T, TEMPERATURE (
°
C)
Figure 3. Power Derating
3
MJE15032 (NPN), MJE15033 (PNP)
NPN − MJE15032
PNP − MJE15033
1000
100
1000
150
°
C
-55
°
C
150
°
C
25
°
C
100
25
°
C
-55
°
C
10
10
1.0
1.0
0.1
1.0
10
10
10
0.1
0.1
0.1
1.0
10
10
10
I ,
COLLECTOR CURRENT (AMPS)
C
I ,
COLLECTOR CURRENT (AMPS)
C
Figure 5. PNP − MJE15033
CE
= 5 V DC Current Gain
Figure 4. NPN − MJE15032
CE
= 5 V DC Current Gain
V
V
10
10
-55
°
C
-55
°
C
1.0
1.0
25
°
C
25
°
C
150
°
C
150
°
C
0.1
0.1
1.0
1.0
0.1
I ,
COLLECTOR CURRENT (AMPS)
C
I ,
COLLECTOR CURRENT (AMPS)
C
Figure 7. PNP − MJE15033
Figure 6. NPN − MJE15032
V
CE
= 5 V V
BE(on)
Curve
V
CE
= 5 V V
BE(on)
Curve
10
100
10
150
°
C
25
°
C
1.0
25
°
C
1.0
-55
°
C
-55
°
C
150
°
C
0.1
0.1
0.01
0.01
0.1
1.0
1.0
I ,
COLLECTOR CURRENT (AMPS)
C
I ,
COLLECTOR CURRENT (AMPS)
C
Figure 9. PNP − MJE15033
Figure 8. NPN − MJE15032
V
CE(sat)
I
C
/I
B
= 10
V
CE(sat)
I
C
/I
B
= 10
4
MJE15032 (NPN), MJE15033 (PNP)
NPN − MJE15032
PNP − MJE15033
100
100
10
150
°
C
150
°
C
25
°
C
10
-55
°
C
25
°
C
1.0
1.0
-55
°
C
0.1
0.1
0.01
0.01
0.1
1.0
I ,
COLLECTOR CURRENT (AMPS)
10
0.1
1.0
10
I ,
COLLECTOR CURRENT (AMPS)
C
C
Figure 10. NPN − MJE15032
Figure 11. PNP − MJE15033
V
CE(sat)
I
C
/I
B
= 20
V
CE(sat)
I
C
/I
B
= 20
10
10
-55
°
C
-55
°
C
1.0
1.0
25
°
C
25
°
C
150
°
C
150
°
C
0.1
0.1
0.1
1.0
10
0.1
1.0
10
I ,
COLLECTOR CURRENT (AMPS)
C
I ,
COLLECTOR CURRENT (AMPS)
C
Figure 12. NPN − MJE15032
Figure 13. PNP − MJE15033
V
BE(sat)
I
C
/I
B
= 10
V
BE(sat)
I
C
/I
B
= 10
5
MJE15032 (NPN), MJE15033 (PNP)
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
NOTES:
1. DIMENSIONING
AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING
DIMENSION: INCH.
3. DIMENSION
Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
SEATING
PLANE
−T−
C
B
F
T
S
INCHES
DIM MIN
MAX
MILLIMETERS
4
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.36
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
—
MAX
15.75
10.53
4.83
0.96
4.09
2.66
4.10
0.61
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
—
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
—
0.620
0.415
0.190
0.038
0.161
0.105
0.161
0.024
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
—
A
K
Q
Z
1
2
3
U
H
G
H
J
K
L
N
Q
R
S
T
L
R
V
J
G
U
V
Z
D
0.080
2.04
N
STYLE 1:
PIN 1.
BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC).
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. SCILLC
reserves the right to make changes without further notice to any products herein.
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particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time.
All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
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does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for
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T
:
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o
ll Free
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o
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MJE15032/D
