onsemi-MJE172G
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MJE170G, MJE171G,
MJE172G (PNP), MJE180G,
MJE181G, MJE182G (NPN)
Complementary Plastic
Silicon Power
T
r
ansistors
The MJE170/180 series is designed for low power audio amplifier
and low current, high speed switching applications.
3 AMPERES
POWER TRANSISTORS
COMPLEMENTARY SILICON
40 − 60 − 80 VOLTS
12.5 WATTS
Features
•
High DC Current Gain
•
High Current−Gain − Bandwidth Product
•
Annular Construction for Low Leakages
•
Epoxy Meets UL 94 V−0 @ 0.125 in
•
These Devices are Pb−Free and are RoHS Compliant*
PNP
NPN
MAXIMUM RATINGS
COLLECTOR
2, 4
COLLECTOR
2, 4
Rating
Symbol
Value
Unit
Collector−Base Voltage
MJE170G, MJE180G
MJE171G, MJE181G
MJE172G, MJE182G
V
Vdc
CB
60
80
100
3
3
BASE
BASE
Collector−Emitter Voltage
MJE170G, MJE180G
MJE171G, MJE181G
MJE172G, MJE182G
V
CEO
Vdc
40
60
80
1
1
EMITTER
EMITTER
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current
V
7.0
3.0
6.0
1.0
Vdc
Adc
Adc
Adc
EB
I
C
I
CM
I
B
TO−225
CASE 77−09
STYLE 1
T
o
tal Power Dissipation
P
P
D
@ T
= 25
_
C
12.5
0.012
W
W/
_
C
C
Derate above 25
_
C
T
o
tal Power Dissipation
D
1
2
3
@ T
= 25
_
C
1.5
0.1
W
A
Derate above 25
_
C
W/
_
C
Operating and Storage Junction
T
e
mperature Range
T , T
J
−65 to +150
_
C
stg
MARKING DIAGRAM
ESD − Human Body Model
ESD − Machine Model
HBM
MM
3B
C
V
V
YWW
JE1xxG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Y
=
Y
e
ar
WW
= Work
Week
JE1xx =
Specific Device Code
x = 70, 71, 72, 80, 81, or 82
G
= Pb−Free
Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
*For additional information on our Pb−Free strategy
and soldering details, please
download the ON Semiconductor Soldering and Mounting
T
e
chniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
December, 2013 − Rev. 13
MJE171/D
MJE170G, MJE171G, MJE172G (PNP), MJE180G, MJE181G, MJE182G (NPN)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Symbol
Max
10
Unit
_
C/W
_
C/W
R
q
JC
JA
Thermal Resistance, Junction−to−Ambient
R
83.4
q
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
V
Vdc
CEO(sus)
(I =
10 mAdc, I
= 0)
C
B
MJE170G, MJE180G
MJE171G, MJE181G
MJE172G, MJE182G
40
60
80
−
−
−
Collector Cutoff Current
I
CBO
(V =
60 Vdc, I
= 0)
CB
E
MJE170G, MJE180G
(V =
80 Vdc, I
= 0)
−
−
−
0.1
0.1
0.1
m
Adc
CB
E
MJE171G, MJE181G
(V =
100 Vdc, I
= 0)
CB
E
MJE172G, MJE182G
mAdc
(V =
60 Vdc, I
= 0, T
= 150
°
C)
CB
E
C
MJE170G, MJE180G
(V =
80 Vdc, I
= 0, T
= 150
°
C)
CB
E
C
MJE171G, MJE181G
−
−
0.1
0.1
(V =
100 Vdc, I
= 0, T
= 150
°
C)
CB
E
C
MJE172G, MJE182G
Emitter Cutoff Current
I
m
Adc
EBO
(V =
7.0 Vdc, I
= 0)
−
0.1
BE
C
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I =
100 mAdc, V
= 1.0 Vdc)
50
30
12
250
−
−
C
CE
(I =
500 mAdc, V
= 1.0 Vdc)
C
CE
(I =
1.5 Adc, V
= 1.0 Vdc)
C
CE
Collector−Emitter Saturation Voltage
(I =
500 mAdc, I
= 50 mAdc)
V
Vdc
CE(sat)
−
−
−
0.3
0.9
1.7
C
B
(I =
1.5 Adc, I
= 150 mAdc)
C
B
(I =
3.0 Adc, I
= 600 mAdc)
C
B
Base−Emitter Saturation Voltage
(I =
1.5 Adc, I
= 150 mAdc)
V
Vdc
Vdc
BE(sat)
−
−
1.5
2.0
C
B
(I =
3.0 Adc, I
= 600 mAdc)
C
B
Base−Emitter On Voltage
(I =
500 mAdc, V
= 1.0 Vdc)
V
BE(on)
−
1.2
−
C
CE
DYNAMIC CHARACTERISTICS
f
T
50
MHz
pF
(I =
100 mAdc, V
= 10 Vdc, f
= 10 MHz)
C
CE
test
Output Capacitance
C
ob
(V =
10 Vdc, I
= 0, f = 0.1 MHz)
MJE171G/MJE172G
MJE181G/MJE182G
CB
E
−
−
60
40
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. f =
⎪
h
⎪•
f .
T
fe
test
2
MJE170G, MJE171G, MJE172G (PNP), MJE180G, MJE181G, MJE182G (NPN)
T
A
T
C
2.8 14
2.4 12
2.0 10
1.6 8.0
1.2 6.0
0.8 4.0
0.4 2.0
T
C
T
A
0
0
20
40
60
80
100
120
140
160
T, TEMPERATURE (
°
C)
Figure 1. Power Derating
V
CC
+ꢀ30 V
1K
V
CE
I /I
= 10
= 30 V
500
300
C B
R
C
t
r
25
m
s
V
BE(off)
= 4.0 V
200
SCOPE
+11 V
0
R
T =
25
°
C
J
B
100
50
D
1
51
-ꢀ9.0 V
t , t
≤
10 ns
DUTY CYCLE =
30
20
t
d
r
f
-ꢀ4 V
10
5
1.0%
B
NPN MJE181/182
PNP MJE171/172
R and
R VARIED
TO OBTAIN DESIRED CURRENT LEVELS
C
ꢁD MUST
BE FAST RECOVERY TYPE, e.g.:
3
2
1
ꢁꢁ1N5825 USED ABOVE I
≈
100 mA
ꢁꢁMSD6100 USED BELOW I
≈
100 mA
B
FOR PNP TEST CIRCUI
T
,
R
EVERSE ALL POLARITIES.
B
1
0.01 0.02
0.03 0.05
0.1
0.2 0.3
0.5
1
2
3
5
10
I ,
COLLECTOR CURRENT (AMPS)
C
Figure 3. Turn−On Time
Figure 2. Switching Time Test Circuit
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
P
(pk)
q
q
(t) = r(t)
q
JC
JC
JC
0.05
= 10
°
C/W MAX
0.1
0.07
0.05
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
0.02
0.01
t
1
t
2
1
T
– T
= P
q
(t)
C (pk)
JC
J(pk)
0.03
0.02
DUTY CYCLE, D = t
/t
0 (SINGLE PULSE)
1 2
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
t, TIME (ms)
Figure 4. Thermal Response
3
MJE170G, MJE171G, MJE172G (PNP), MJE180G, MJE181G, MJE182G (NPN)
ACTIVE−REGION SAFE OPERATING AREA
10
10
5.0
5.0
100ꢃ
m
s
100ꢃ
m
s
500ꢃ
m
s
2.0
1.0
0.5
2.0
500ꢃ
m
s
1.0
dc
5.0ꢃms
dc
5.0ꢃms
0.5
T =
150
°
C
J
T =
150
°
C
BONDING WIRE LIMITED
THERMALLY LIMITED @
J
BONDING WIRE LIMITED
THERMALLY LIMITED @
0.2
0.1
0.2
0.1
ꢂT =
25
°
C (SINGLE PULSE)
C
ꢂT =
25
°
C (SINGLE PULSE)
C
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
0.05
0.05
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
MJE181
0.02
0.01
0.02
0.01
ꢂRATED V
CEO
MJE171
MJE172
ꢂRATED V
CEO
MJE182
1.0
2.0 3.0
5.0
10
20 30
50
100
1.0
2.0 3.0
5.0 7.0
10
20 30
50 70 100
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. MJE171, MJE172
Figure 6. MJE181, MJE182
There are two limitations on the power handling ability of
a transistor − average junction temperature and second
is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided
= 150
°
C; T
J(pk) C
breakdown. Safe operating area curves indicate I
− V
C
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
T
< 150
°
C. T
may be calculated from the data in
J(pk)
J(pk)
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
10K
100
PNP MJE171/MJE172
NPN MJE181/MJE182
V
CC
I /I
= 10
= 30 V
5K
70
50
3K
2K
C B
I =
I
B1 B2
T =
25
°
C
J
1K
C
ib
T =
25
°
C
J
500
300
200
t
s
30
20
100
50
t
f
C
30
20
ob
NPN MJE181/182
PNP MJE171/172
10
10
0.5 0.7
1.0
2.0 3.0
5.0 7.0
10
20 30
50
0.01
0.03 0.05
0.1 0.2
0.3 0.5
1
2
3
5
10
0.02
V ,
REVERSE VOLTAGE (VOLTS)
R
I ,
COLLECTOR CURRENT (AMPS)
C
Figure 8. Capacitance
Figure 7. Turn−Off Time
4
MJE170G, MJE171G, MJE172G (PNP), MJE180G, MJE181G, MJE182G (NPN)
ORDERING INFORMATION
Device
Package
Shipping
MJE170G
MJE171G
MJE172G
MJE180G
MJE181G
MJE182G
TO−225
(Pb−Free)
500 Units / Box
TO−225
(Pb−Free)
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
TO−225
(Pb−Free)
TO−225
(Pb−Free)
TO−225
(Pb−Free)
TO−225
(Pb−Free)
5
MJE170G, MJE171G, MJE172G (PNP), MJE180G, MJE181G, MJE182G (NPN)
PACKAGE DIMENSIONS
TO−225
CASE 77−09
ISSUE AC
4
1
3
2
1
2
3
FRONT VIEW
BACK VIEW
NOTES:
E
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. NUMBER AND SHAPE OF LUGS OPTIONAL.
A1
Q
A
MILLIMETERS
PIN 4
BACKSIDE TAB
DIM MIN
MAX
3.00
1.50
0.90
0.88
0.63
11.10
7.80
2.54
16.63
2.54
3.30
4.20
A
A1
b
2.40
1.00
0.60
0.51
0.39
10.60
7.40
2.04
14.50
1.27
2.90
3.80
D
b2
c
P
D
E
1
2
3
e
L
L1
P
Q
L1
STYLE 1:
PIN 1.
EMITTER
2., 4.
COLLECTOR
3. BASE
L
2X
b2
e
2X
c
b
FRONT VIEW
SIDE VIEW
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC).
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. SCILLC
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particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time.
All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
SCILLC
does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for
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T
:
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o
ll Free
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MJE171/D
