onsemi-MJE243G
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MJE243G (NPN),
MJE253Gꢀ(PNP)
Complementary Silicon
Power Plastic
T
r
ansistors
These devices are designed for low power audio amplifier and
low−current, high−speed switching applications.
Features
4.0 AMPERES
•
High Collector−Emitter Sustaining
V
o
ltage
•
High DC Current Gain
•
Low Collector−Emitter Saturation
V
o
ltage
•
High Current Gain Bandwidth Product
•
Annular Construction for Low Leakages
•
These Devices are Pb−Free and are RoHS Compliant*
POWER TRANSISTORS
COMPLEMENTARY SILICON
100 VOLTS, 15 WATTS
NPN
PNP
COLLECTOR 2, 4
COLLECTOR 2, 4
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current
Symbol
Value
100
100
7.0
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
3
3
V
CEO
BASE
BASE
V
CB
V
EB
EMITTER 1
EMITTER 1
I
C
4.0
I
8.0
CM
I
B
1.0
T
o
tal Power Dissipation
P
P
D
TO−225
CASE 77−09
STYLE 1
@ T
= 25
_
C
15
120
W
mW/
_
C
C
Derate above 25
_
C
T
o
tal Power Dissipation
D
@ T
= 25
_
C
1.5
12
W
A
1
2
3
Derate above 25
_
C
mW/
_
C
_
C
Operating and Storage Junction
T
e
mperature Range
T , T
–
6
5 to
+
1
50
J
stg
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
YWW
JE2x3G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
8.34
83.4
Unit
_
C/W
_
C/W
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
R
q
JC
JA
Y
WW
=
Y
e
ar
= Work Week
R
q
JE2x3 =
Device Code
x = 4 or 5
G
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
TO−225
500 Units/Box
MJE243G
(Pb−Free)
TO−225
(Pb−Free)
500 Units/Box
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting
T
e
chniques
Reference Manual, SOLDERRM/D.
MJE253G
©
Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
July, 2014 − Rev. 16
MJE243/D
MJE243G (NPN), MJE253G (PNP)
ELECTRICAL CHARACTERISTICS
(T =
25
_
C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
V
V
CEO(sus)
(I =
10 mAdc, I
= 0)
100
−
C
B
Collector Cutoff Current
(V =
100 Vdc, I
= 0)
I
CBO
−
−
0.1
0.1
m
A
mA
CB
E
(V =
100 Vdc, I
= 0, T
= 125
_
C)
CE
E
C
Emitter Cutoff Current
(V =
7.0 Vdc, I
= 0)
I
m
Adc
EBO
−
0.1
BE
C
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I =
200 mAdc, V
= 1.0 Vdc)
40
15
180
−
C
CE
(I =
1.0 Adc, V
= 1.0 Vdc)
C
CE
Collector−Emitter Saturation Voltage
(I =
500 mAdc, I
= 50 mAdc)
V
V
V
CE(sat)
−
−
0.3
0.6
C
B
(I =
1.0 Adc, I
= 100 mAdc)
C
B
Base−Emitter Saturation Voltage
(I =
2.0 Adc, I
= 200 mAdc)
V
V
BE(sat)
−
−
1.8
1.5
C
B
Base−Emitter On Voltage
(I =
500 mAdc, V
= 1.0 Vdc)
V
BE(on)
C
CE
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
f
MHz
pF
T
(I =
100 mAdc, V
= 10 Vdc, f
= 10 MHz)
40
−
−
C
CE
test
Output Capacitance
C
ob
(V =
10 Vdc, I
= 0, f = 0.1 MHz)
50
CB
E
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2
MJE243G (NPN), MJE253G (PNP)
16
12
1.6
1.2
0.8
0.4
0
8.0
4.0
0
20
40
60
80
100
120
140
160
T, TEMPERATURE (
°
C)
Figure 1. Power Derating
V
CC
+ꢀ30 V
1K
500
t
r
R
C
300
200
25
m
s
SCOPE
+11 V
0
R
B
100
50
D
1
51
-ꢀ9.0 V
t , t
≤
10 ns
DUTY CYCLE = 1.0%
30
20
t
d
V
CC
I /I
= 10
= 30 V
r
f
-ꢀ4 V
10
5
C B
T =
25
°
C
J
R and
R VARIED
TO OBTAIN DESIRED CURRENT LEVELS
NPN MJE243
PNP MJE253
B
C
ꢁD MUST
BE FAST RECOVERY TYPE, e.g.:
3
2
1
ꢁꢁ1N5825 USED ABOVE I
≈
100 mA
ꢁꢁMSD6100 USED BELOW I
≈
100 mA
B
FOR PNP TEST CIRCUI
T
,
R
EVERSE ALL POLARITIES
B
1
0.01 0.02
0.03 0.05
0.1
0.2 0.3
0.5
1
2
3
5
10
I ,
COLLECTOR CURRENT (AMPS)
C
Figure 3. Turn−On Time
Figure 2. Switching Time Test Circuit
1.0
0.7
0.5
D = 0.5
0.2
0.1
0.3
0.2
P
(pk)
q
q
(t) = r(t)
q
JC
0.05
JC
JC
0.1
0.07
0.05
= 8.34
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
0.02
0.01
t
1
t
2
1
0.03
0.02
T
– T
= P
q
C (pk)
JC
(t)
J(pk)
0 (SINGLE PULSE)
DUTY CYCLE, D = t
/t
1 2
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
t, TIME (ms)
5.0
10
20
50
100
200
Figure 4. Thermal Response
3
MJE243G (NPN), MJE253G (PNP)
10
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
− V
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
100ꢂ
m
s
500ꢂ
m
s
5.0
C
CE
1.0ꢂms
2.0
1.0
0.5
dc
T =
150
°
C
J
BONDING WIRE LIMITED
THERMALLY LIMITED @
The data of Figure 5 is
based on T
variable depending on conditions. Second breakdown pulse
= 150
_
C; T
is
5.0ꢂms
J(pk)
C
0.2
0.1
T =
25
°
C (SINGLE PULSE)
C
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
ꢁRATED V
limits are valid for duty cycles to 10% provided T
J(pk)
≤
150
_
C. T
0.05
J(pk)
CEO
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
0.02
0.01
MJE243/MJE253
20 30
50 70 100
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.0
2.0 3.0
5.0 7.0
10
V
CE
Figure 5. Active Region Safe Operating Area
10K
200
V
CC
I /I
= 10
= 30 V
5K
T =
25
°
C
J
t
s
3K
2K
C B
I =
I
B1 B2
100
T =
25
°
C
J
C
ib
1K
70
50
500
300
200
30
100
50
C
ob
20
30
20
t
f
MJE243 (NPN)
MJE253 (PNP)
NPN MJE243
PNP MJE253
10
0.01
10
1.0
0.03 0.05
0.1
0.2 0.3
0.5
1
2
3
5
10
0.02
2.0 3.0
5.0 7.0
10
20 30
50 70 100
I ,
COLLECTOR CURRENT (AMPS)
C
V ,
REVERSE VOLTAGE (VOLTS)
R
Figure 6. Turn−Off Time
Figure 7. Capacitance
4
MJE243G (NPN), MJE253G (PNP)
NPN
PNP
MJE243
MJE253
500
200
V
V
= 1.0 V
= 2.0 V
CE
T =
150
°
C
V
V
= 1.0 V
= 2.0 V
T =
150
°
C
J
CE
J
300
200
100
70
CE
CE
25
°
C
25
°
C
50
100
70
-ꢀ55
°
C
-ꢀ55
°
C
30
20
50
30
20
10
7.0
5.0
10
7.0
5.0
3.0
2.0
0.04 0.06
0.1
0.2
0.4 0.6
1.0
2.0
4.0
0.04 0.06
0.1
0.2
0.4 0.6
1.0
2.0
4.0
4.0
4.0
I ,
COLLECTOR CURRENT (AMP)
C
I ,
COLLECTOR CURRENT (AMP)
C
Figure 8. DC Current Gain
1.4
1.2
1.4
T =
25
°
C
T =
25
°
C
J
J
1.2
1.0
0.8
0.6
1.0
0.8
0.6
0.4
V
@ I
/I =
10
C B
BE(sat)
V
@ I
/I =
10
C B
BE(sat)
V
BE
@ V
= 1.0 V
CE
V
@ V
= 1.0 V
BE CE
I /I
= 10
C B
I /I
= 10
C B
0.4
0.2
0
5.0
5.0
0.2
V
CE(sat)
V
CE(sat)
0
0.04 0.06
0.1
0.2
0.4 0.6
1.0
2.0
4.0
0.04 0.06
0.1
0.2
0.4 0.6
1.0
2.0
I ,
COLLECTOR CURRENT (AMP)
C
I ,
COLLECTOR CURRENT (AMP)
C
Figure 9. “On” Voltages
+ꢀ2.5
+ꢀ2.0
+ꢀ1.5
+ꢀ1.0
+ꢀ0.5
+ꢀ2.5
+ꢀ2.0
*APPLIES FOR I
/I
≤
h
*APPLIES FOR I
/I
≤
h
C B
FE/3
C B
FE/3
+ꢀ1.5
+ꢀ1.0
25
°
C to 150
°
C
25
°
C to 150
°
C
-ꢀ55
°
C to 25
°
C
+ꢀ0.5
0
*
q
FOR V
VC
CE(sat)
*
q
FOR V
VC
CE(sat)
0
-ꢀ0.5
-ꢀ1.0
-ꢀ1.5
-ꢀ2.0
-ꢀ2.5
-ꢀ55
°
C to 25
°
C
25
°
C to 150
°
C
-ꢀ0.5
-ꢀ1.0
-ꢀ1.5
25
°
C to 150
°
C
-ꢀ55
°
C to 25
°
C
q
FOR V
BE
VB
q
FOR V
BE
VB
-ꢀ55
°
C to 25
°
C
-ꢀ2.0
-ꢀ2.5
0.04 0.06
0.1
0.2
0.4 0.6
1.0
2.0
4.0
0.04 0.06
0.1
0.2
0.4 0.6
1.0
2.0
I ,
COLLECTOR CURRENT (AMP)
C
I ,
COLLECTOR CURRENT (AMP)
C
Figure 10. Temperature Coefficients
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO
−
225
CASE 77
−
09
ISSUE AD
4
DATE 25 MAR 2015
1
3
2
2
1
3
FRONT VIEW
BACK VIEW
SCALE 1:1
NOTES:
E
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. NUMBER AND SHAPE OF LUGS OPTIONAL.
A1
Q
A
MILLIMETERS
PIN 4
BACKSIDE TAB
DIM MIN
MAX
3.00
1.50
0.90
0.88
0.63
11.10
7.80
2.54
16.63
2.54
3.30
4.20
A
A1
b
2.40
1.00
0.60
0.51
0.39
10.60
7.40
2.04
14.50
1.27
2.90
3.80
D
b2
c
P
D
E
1
2
3
e
L
L1
P
Q
L1
GENERIC
MARKING DIAGRAM*
L
YWW
XX
XXXXXG
2X
b2
Y
=
Y
e
ar
WW
= Work Week
XXXXX = Device Code
= Pb
−
Free Package
e
2X
c
G
b
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present.
FRONT VIEW
SIDE VIEW
STYLE 1:
STYLE 2:
STYLE 3:
PIN 1.
BASE
STYLE 4:
STYLE 5:
PIN 1.
MT 1
PIN 1.
EMITTER
2., 4.
COLLECTOR
3. BASE
PIN 1.
CATHODE
2., 4.
ANODE
3. GATE
PIN 1.
ANODE 1
2., 4.
ANODE 2
3. GATE
2., 4.
COLLECTOR
3. EMITTER
2., 4.
MT 2
3. GATE
STYLE 6:
STYLE 7:
STYLE 8:
STYLE 9:
STYLE 10:
PIN 1.
CATHODE
2., 4.
GATE
3. ANODE
PIN 1.
MT 1
2., 4.
GATE
3. MT
2
PIN 1.
SOURCE
2., 4.
GATE
3. DRAIN
PIN 1.
GATE
2., 4.
DRAIN
3. SOURCE
PIN 1.
SOURCE
2., 4.
DRAIN
3. GATE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42049B
TO
−
225
PAGE 1 OF 1
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