onsemi-MJE340G
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MJE340G
Plastic Medium-Power
NPN Silicon
T
r
ansistor
This device is useful for high
−
voltage general purpose applications.
Features
•
Suitable for Transformerless, Line
−
Operated Equipment
•
High Power Dissipation Rating for High Reliability
•
These Devices are Pb
−
Free and are RoHS Compliant*
•
Complementary to MJE350
0.5 AMPERE
POWER TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
300 VOLTS, 20 WATTS
Rating
Collector
−
Emitter Voltage
Emitter
−
Base Voltage
Symbol
Value
300
3.0
Unit
Vdc
V
CEO
SCHEMATIC
V
EB
Vdc
COLLECTOR
2, 4
Collector Current
−
Continuous
I
500
mAdc
C
T
o
tal Power Dissipation
P
D
@ T
= 25
_
C
20
0.16
W
C
Derate above 25
_
C
mW/
_
C
3
Operating and Storage Junction
T
e
mperature Range
T , T
–
6
5 to
+
1
50
_
C
BASE
J
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction
−
to
−
Case
q
6.25
_
C/W
JC
TO
−
225
CASE 77
−
09
STYLE 1
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
C
Characteristic
Symbol Min Max
Unit
1
2
3
OFF CHARACTERISTICS
Collector
−
Emitter Sustaining Voltage
V
Vdc
m
Adc
m
Adc
CEO(sus)
(I =
1.0 mAdc, I
= 0)
300
−
−
C
B
MARKING DIAGRAM
Collector Cutoff Current
(V =
300 Vdc, I
= 0)
I
CBO
100
100
CB
E
YWW
JE340G
Emitter Cutoff Current
(V =
3.0 Vdc, I
= 0)
I
EBO
−
EB
C
ON CHARACTERISTICS
DC Current Gain
h
FE
−
Y
WW
=
Y
e
ar
= Work Week
(I =
50 mAdc, V
= 10 Vdc)
30
240
C
CE
Product parametric performance is indicated in the Electrical Characteristics for
the listed test conditions, unless otherwise noted. Product performance may not
be indicated by the Electrical Characteristics if operated under different
conditions.
JE340 =
Device Code
G
= Pb
−
Free Package
ORDERING INFORMATION
Device
MJE340G
Package
Shipping
500 Units/Box
*For additional information on our Pb
−
Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting
T
e
chniques
Reference Manual, SOLDERRM/D.
TO
−
225
(Pb
−
Free)
©
Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
February, 2017
−
Rev. 14
MJE340/D
MJE340G
32
28
24
20
16
12
8.0
1.0
0.8
T =
25
°
C
J
V
@ I
/I =
10
B
BE(sat)
C
V
BE
@ V
= 10 V
CE
0.6
0.4
0.2
0
V
@ I
/I =
10
C B
CE(sat)
MJE340
4.0
0
I /I
= 5.0
C B
0
20
40
60
80
100
120
140
160
10
20 30
50
100
I ,
COLLECTOR CURRENT (mA)
200 300
500
T ,
CASE TEMPERATURE (
°
C)
C
Figure 1.
C
Power Temperature Derating
Figure 2. “On” Voltages
ACTIVE
−
REGION SAFE OPERATING AREA
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
−
V
1.0
C
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
10
m
s
0.5
0.3
T =
150
°
C
J
500
m
s
based on T
= 150
_
C; T
is variable depending on
J(pk)
C
1.0ꢀms
0.2
dc
conditions. Second breakdown pulse limits are valid for
duty cycles to 10% provided T
≤
150
_
C. At high case
0.1
J(pk)
temperatures, thermal limitations will reduce the power that
can be handled to values less than the limitations imposed by
second breakdown.
0.05
SECOND BREAKDOWN LIMIT
BONDING WIRE LIMIT
0.03
0.02
THERMAL LIMIT T
= 25
°
C
C
SINGLE PULSE
0.01
10
20
30
50
70 100
200 300
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 3. MJE340
2
MJE340G
2.0
10
7.0
T =
25
°
C
J
150
°
C
5.0
1.6
1.2
0.8
0.4
0
T =
25
°
C
J
V
= 1.0 Vdc
CE
3.0
2.0
-ꢁ55
°
C
1.0
0.7
0.5
V
@ I
/I =
10
B
BE(sat)
C
V
@ V
= 1.0 V
CE
BE(on)
0.3
0.2
V
@ I
/I =
10
C B
CE(sat)
0.1
0.01 0.02
0.03 0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.
0
4
.0
0.005 0.01
0.02 0.03 0.05
0.1
0.2 0.3
0.5
1.0 2.0
3.
0
4
.0
I ,
COLLECTOR CURRENT (AMP)
C
I ,
COLLECTOR CURRENT (AMP)
C
Figure 4. DC Current Gain
Figure 5. “On” Voltage
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
P
(pk)
q
q
(t) = r(t)
q
JC
JC
JC
0.1
0.05
0.02
= 3.12
°
C/W MAX
0.1
0.07
0.05
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t
1
READ TIME AT t
t
2
1
T
– T
= P
q
C (pk)
JC
(t)
J(pk)
0.03
0.02
0.01
DUTY CYCLE, D = t
/t
1
2
SINGLE PULSE
0.01
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20
50
100
200
500
1000
t, TIME OR PULSE WIDTH (ms)
Figure 6. Thermal Response
300
200
V
V
= 10 V
= 2.0 V
CE
CE
T =
150
°
C
J
100
70
+100
°
C
+ꢁ25
°
C
50
30
20
-ꢁ55
°
C
10
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
300
500
I ,
COLLECTOR CURRENT (mAdc)
C
Figure 7. DC Current Gain
3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO
−
225
CASE 77
−
09
ISSUE AD
4
DATE 25 MAR 2015
1
3
2
2
1
3
FRONT VIEW
BACK VIEW
SCALE 1:1
NOTES:
E
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. NUMBER AND SHAPE OF LUGS OPTIONAL.
A1
Q
A
MILLIMETERS
PIN 4
BACKSIDE TAB
DIM MIN
MAX
3.00
1.50
0.90
0.88
0.63
11.10
7.80
2.54
16.63
2.54
3.30
4.20
A
A1
b
2.40
1.00
0.60
0.51
0.39
10.60
7.40
2.04
14.50
1.27
2.90
3.80
D
b2
c
P
D
E
1
2
3
e
L
L1
P
Q
L1
GENERIC
MARKING DIAGRAM*
L
YWW
XX
XXXXXG
2X
b2
Y
=
Y
e
ar
WW
= Work Week
XXXXX = Device Code
= Pb
−
Free Package
e
2X
c
G
b
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present.
FRONT VIEW
SIDE VIEW
STYLE 1:
STYLE 2:
STYLE 3:
PIN 1.
BASE
STYLE 4:
STYLE 5:
PIN 1.
MT 1
PIN 1.
EMITTER
2., 4.
COLLECTOR
3. BASE
PIN 1.
CATHODE
2., 4.
ANODE
3. GATE
PIN 1.
ANODE 1
2., 4.
ANODE 2
3. GATE
2., 4.
COLLECTOR
3. EMITTER
2., 4.
MT 2
3. GATE
STYLE 6:
STYLE 7:
STYLE 8:
STYLE 9:
STYLE 10:
PIN 1.
CATHODE
2., 4.
GATE
3. ANODE
PIN 1.
MT 1
2., 4.
GATE
3. MT
2
PIN 1.
SOURCE
2., 4.
GATE
3. DRAIN
PIN 1.
GATE
2., 4.
DRAIN
3. SOURCE
PIN 1.
SOURCE
2., 4.
DRAIN
3. GATE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42049B
TO
−
225
PAGE 1 OF 1
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Semiconductor Components Industries, LLC, 2019
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:
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