onsemi-MJE5742G
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MJE5740, MJE5742
NPN Silicon Power
Darlington
T
r
ansistors
The MJE5740 and MJE5742 Darlington transistors are designed for
high−voltage power switching in inductive circuits.
Features
•
These Devices are Pb−Free and are RoHS Compliant*
POWER DARLINGTON
TRANSISTORS
8 AMPERES
Applications
•
Small Engine Ignition
•
Switching Regulators
•
Inverters
•
Solenoid and Relay Drivers
•
Motor Controls
300−400 VOLTS
80 WATTS
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
V
Vdc
CEO(sus)
MJE5740
MJE5742
300
400
≈
100
COLLECTOR 2,4
BASE
≈
50
Collector−Emitter Voltage
Emitter−Base Voltage
V
Vdc
CEV
MJE5740
MJE5742
600
800
V
8
Vdc
Adc
EB
Collector Current
− Continuous
− Peak (Note 1)
I
C
8
16
1
I
CM
Base Current
− Continuous
− Peak (Note 1)
I
2.5
5
Adc
B
I
BM
EMITTER 3
T
o
tal Device Dissipation @ T
= 25
_
C
P
2
W
A
D
Derate above 25
°
C
0.016
W/
_
C
W
W/
_
C
_
C
MARKING
DIAGRAM
T
o
tal Device Dissipation @ T
= 25
_
C
P
D
100
0.8
C
Derate above 25
°
C
Operating and Storage Junction
T
e
mperature Range
T , T
J
−65 to +150
stg
MJE574xG
AY WW
THERMAL CHARACTERISTICS
TO−220AB
CASE 221A−09
STYLE 1
Characteristics
Symbol
Max
1.25
62.5
275
Unit
_
C/W
_
C/W
_
C
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
R
q
JC
q
JA
L
1
2
R
3
Maximum Lead
T
e
mperature for Soldering
Purposes 1/8
″
from Case for 5 Seconds
T
MJE574x =
Device Code
x = 0 or 2
G
A
Y
WW
=
=
=
=
Pb−Free Package
Assembly Location
Y
e
ar
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Pulse
T
e
st: Pulse Width = 5 ms, Duty Cycle
≤
10%.
Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting
T
e
chniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
January, 2015 − Rev. 12
MJE5740/D
MJE5740, MJE5742
ELECTRICAL CHARACTERISTICS
(T =
25
_
C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
(Note 2)
Collector−Emitter Sustaining Voltage
(I =
50 mA, I
= 0)
MJE5740
MJE5742
V
300
400
−
−
−
−
Vdc
CEO(sus)
C
B
Collector Cutoff Current (V
= Rated Value, V
= 1.5 Vdc)
I
−
−
−
−
1
5
mAdc
mAdc
CEV
BE(off)
CEV
EBO
(V
CEV
= Rated Value, V
= 1.5 Vdc, T
= 100
_
C)
BE(off)
C
Emitter Cutoff Current (V
= 8 Vdc, I
= 0)
I
−
−
75
EB
C
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
Clamped Inductive SOA with Base Reverse Biased
I
See Figure 6
See Figure 7
S/b
RBSOA
ON CHARACTERISTICS
(Note 2)
DC Current Gain (I
= 0.5 Adc, V
= 5 Vdc)
h
FE
50
200
100
400
−
−
−
C
CE
(I =
4 Adc, V
= 5 Vdc)
C
CE
Collector−Emitter Saturation Voltage (I
= 4 Adc, I
= 0.2 Adc)
V
V
−
−
−
−
−
−
2
3
2.2
Vdc
C
B
CE(sat)
Collector−Emitter Saturation Voltage
(I =
8 Adc, I
= 0.4 Adc)
C
B
Collector−Emitter Saturation Voltage
(I =
4 Adc, I
= 0.2 Adc, T
= 100
_
C)
C
B
C
Base−Emitter Saturation Voltage (I
= 4 Adc, I
= 0.2 Adc)
−
−
−
−
−
−
2.5
3.5
2.4
Vdc
Vdc
C
B
BE(sat)
Base−Emitter Saturation Voltage
(I =
8 Adc, I
= 0.4 Adc)
C
B
Base−Emitter Saturation Voltage
(I =
4 Adc, I
= 0.2 Adc, T
= 100
_
C)
C
B
C
Diode Forward Voltage (Note 3) (I
= 5 Adc)
V
f
−
−
2.5
F
SWITCHING CHARACTERISTICS
Typical Resistive Load
(
T
a
ble 1)
Delay Time
t
t
−
−
−
−
0.04
0.5
8
−
−
−
−
m
s
m
s
m
s
m
s
d
(V =
250 Vdc, I
= 6 A
Rise Time
Storage Time
Fall Time
t
r
CC
C(pk)
I
B1
= I
= 0.25 A, t
= 25
m
s,
B2
p
s
Duty Cycle
v
1%)
t
2
f
Inductive Load, Clamped
(
T
a
ble 1)
Voltage Storage Time
t
−
−
4
2
−
−
m
s
m
s
sv
(I
= 6 A, V
= 250 Vdc
= 5 Vdc)
C(pk)
CE(pk)
= 0.06 A, V
BE(off)
I
B1
Crossover Time
t
c
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse
T
e
st: Pulse Width 300
m
s, Duty Cycle = 2%.
3. The
internal Collector−to−Emitter diode can eliminate the need for an external diode to clamp inductive loads.
T
e
sts have shown that the
Forward Recovery Voltage (V ) of this diode is comparable to that of typical fast recovery rectifiers.
f
ORDERING INFORMATION
Device
Package
Shipping
MJE5740G
MJE5742G
TO−220
(Pb−Free)
50 Units / Rail
TO−220
(Pb−Free)
2
MJE5740, MJE5742
TYPICAL CHARACTERISTICS
100
80
I
C(pk)
V
CE(pk)
SECOND BREAKDOWN DERATING
90% V
90% I
CE(pk)
C
I
C
t
sv
t
rv
t
fi
t
ti
60
40
20
0
t
c
THERMAL DERATING
V
I
10% V
CE(pk)
CE
10%
2% I
I
C
90% I
C(pk)
B
B1
0
20
40
60
80
100
120
140
160
TIME
T ,
CASE TEMPERATURE (
°
C)
C
Figure 1. Power Derating
Figure 2. Inductive Switching Measurements
2000
1000
2.4
2.2
2
150
°
C
+ꢀ25
°
C
h
= 20
FE
V
CE
= 5 V
1.8
1.6
1.4
1.2
-ꢀ55
°
C
+ꢀ25
°
C
-ꢀ55
°
C
100
+150
°
C
1
0.8
0.6
0.4
10
0.1
1
2
I ,
COLLECTOR CURRENT (AMPS)
5
10
0.2
0.5
1
2
I ,
COLLECTOR CURRENT (AMPS)
5
10
C
C
Figure 3. DC Current Gain
Figure 4. Base−Emitter Voltage
1.8
1.6
1.4
1.2
1
h
FE
= 20
-ꢀ55
°
C
0.8
0.6
0.4
0.2
0.1
+ꢀ25
°
C
+150
°
C
0.2
0.5
1
2
5
10
I ,
COLLECTOR CURRENT (AMPS)
C
Figure 5. Collector−Emitter Saturation Voltage
3
MJE5740, MJE5742
Table 1. Test Conditions for Dynamic Performance
RESISTIVE
SWITCHING
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING
+ꢀ5 V
V
CC
33
1N493
3
+V
CC
MJE21
0
L
MR826
*
0.001
m
F
R
C
1N493
3
33
TUT
V
clamp
I
C
SCOPE
R
P
W
2N222
2
B
R
B
1
k
DUTY CYCLE
≤
10%
t , t
≤
10 ns
68
*SELECTED FOR
≥
1 kV
r
f
1
5.1
k
I
B
D
+ꢀ5 V
V
CE
k
1
51
1
T.U.T.
1N493
-ꢀ4 V
k
2N2905
3
270
MJE20
0
0.02
m
F
NOTE:
PW and V
Adjusted for Desired I
47
100
CC
C
1/2
W
R
B
Adjusted for Desired I
B1
-V
BE(off)
COIL DATA:
FERROXCUBE CORE #6656
FULL BOBBIN (~16 TURNS) #16
V
V
= 30 V
= 250 Vdc
= 6 A
CC
GAP FOR 200
m
H/20 A
= 200
m
H
V
= 250 V
D1 = 1N5820 OR EQUIV.
CC
CE(pk)
L
coil
I
C(pk)
OUTPUT WAVEFORMS
+10 V
25
m
s
I
C
t
f
CLAMPED
t ADJUSTED
TO
1
OBTAIN I
I
C(pk)
C
0
t
TEST EQUIPMENT
SCOPE-TEKTRONICS
475 OR EQUIVALENT
L
(I
coil C
)
pk
t
1
t
f
t
≈
1
–
9
.2 V
V
CC
V
CE
V
ꢁOR
L
(I
CE
t , t
< 10 ns
f
coil C
)
pk
r
t
≈
2
V
clamp
DUTY CYCLE = 1%
AND R
ADJUSTED
V
clamp
t
R
B
C
FOR DESIRED I
AND I
TIM
E
t
2
B
C
4
MJE5740, MJE5742
SAFE OPERATING AREA INFORMATION
REVERSE BIAS
FORWARD BIAS
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
For inductive loads, high voltage and high current must be
sustained simultaneously during turn−off, in most cases,
with the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping, RC
snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage−current condition allowable
during reverse biased turnoff. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 7 gives the complete RBSOA
characteristics.
breakdown. Safe operating area curves indicate I
− V
C
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 6 is based on T
= 25
_
C; T
is
C
J(pk)
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when T
≥
25
_
C. Second breakdown limitations do
C
not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 6 may be found at
any case temperature by using the appropriate curve on
Figure 1.
The Safe Operating Area figures shown in Figures 6 and 7 are specified ratings for these devices under the test conditions shown.
16
16
10
14
8
100
m
s
12
3
10
m
s
10
5ꢁms
1
8
0.5
0.3
BONDING WIRE LIMIT
1ꢁms
V
BE(off)
≤
5 V
6
4
dc
THERMAL LIMIT
(SINGLE PULSE)
T =
100
°
C
J
0.1
SECOND BREAKDOWN LIMIT
MJE5742
CURVES APPLY BELOW RATED V
CEO
MJE5740
MJE5742
MJE5740
0.05
2
0
0.02
5
10
V
20
50
100
200
400
0
100
200
300
400
500
V
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
CE
CE
Figure 6. Forward Bias Safe Operating Area
Figure 7. Reverse Bias Safe Operating Area
RESISTIVE SWITCHING PERFORMANCE
10
7
t
r
1
0.7
0.5
t
s
5
3
2
0.3
0.2
V
= 250 V
CC
t
d
I =
I
B1 B2
1
0.7
0.5
V
I
= 250 V
CC
= I
I /I
= 20
C B
0.1
B1 B2
0.07
0.05
I /I
= 20
C B
t
f
0.3
0.2
0.03
0.02
0.2 0.3
0.5 0.7
1
2
3
5
7
10
0.2 0.3
0.5 0.7
1
2
3
5
7
10
I ,
COLLECTOR CURRENT (AMPS)
C
I ,
COLLECTOR CURRENT (AMPS)
C
Figure 9. Turn−Off Time
Figure 8. Turn−On Time
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO
−
220
CASE 221A
−
09
ISSUE AJ
DATE 05 NOV 2019
SCALE 1:1
STYLE 1:
PIN 1.
BASE
2. COLLECTOR
STYLE 2:
PIN 1.
BASE
2. EMITTER
STYLE 3:
STYLE 4:
PIN 1.
MAIN TERMINAL 1
PIN 1.
CATHODE
2. ANODE
3. GATE
2. MAIN
TERMINAL 2
3. GATE
3. EMITTER
3. COLLECTOR
4. EMITTER
4. COLLECTOR
4. ANODE
4. MAIN
TERMINAL 2
STYLE 5:
PIN 1.
GATE
STYLE 6:
PIN 1.
ANODE
STYLE 7:
STYLE 8:
PIN 1.
CATHODE
2. ANODE
PIN 1.
CATHODE
2. ANODE
2. DRAIN
3. SOURCE
4. DRAIN
2. CATHODE
3. ANODE
3. CATHODE
4. ANODE
3. EXTERNAL
TRIP/DELAY
4. ANODE
4. CATHODE
STYLE 9:
PIN 1.
GATE
STYLE 10:
PIN 1.
GATE
STYLE 11:
STYLE 12:
PIN 1.
DRAIN
2. SOURCE
3. GATE
PIN 1.
MAIN TERMINAL 1
2. MAIN
TERMINAL 2
3. GATE
2. COLLECTOR
3. EMITTER
2. SOURCE
3. DRAIN
4. COLLECTOR
4. SOURCE
4. SOURCE
4. NOT
CONNECTED
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42148B
TO
−
220
PAGE 1 OF 1
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:
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