onsemi-MJE800G
| Part # | onsemi-MJE800G |
Download  | onsemi-MJE800G |
MJE700G, MJE702G,
MJE703G (PNP), MJE800G,
MJE802G, MJE803G (NPN)
Plastic Darlington
Complementary Silicon
Power
T
r
ansistors
4.0 AMPERE
DARLINGTON POWER
TRANSISTORS
These devices are designed for general−purpose amplifier and
low−speed switching applications.
Features
COMPLEMENTARY SILICON
40 WATT
•
High DC Current Gain − h
= 2000 (Typ) @ I
FE
C
= 2.0 Adc
•
Monolithic Construction with Built−in Base−Emitter Resistors to
Limit Leakage − Multiplication
NPN
PNP
COLLECTOR 2, 4
COLLECTOR 2, 4
•
Choice of Packages − MJE700 and MJE800 Series
•
These Devices are Pb−Free and are RoHS Compliant*
BASE
3
BASE
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
EMITTER 1
EMITTER 1
Collector−Emitter Voltage
MJE700G, MJE800G
MJE702G, MJE703G, MJE802G,
MJE803G
V
CEO
Vdc
60
80
MJE800
MJE802
MJE803
MJE700
MJE702
MJE703
Collector−Base Voltage
MJE700G, MJE800G
MJE702G, MJE703G, MJE802G,
MJE803G
V
CB
Vdc
60
80
Emitter−Base Voltage
Collector Current
V
5.0
4.0
0.1
Vdc
Adc
Adc
EB
TO−225
CASE 77−09
STYLE 1
I
C
Base Current
I
B
1
2
3
T
o
tal Power Dissipation
P
D
@ T
= 25
_
C
40
0.32
W
mW/
_
C
_
C
C
Derate above 25
_
C
MARKING DIAGRAM
Operating and Storage Junction
T
e
mperature Range
T , T
–
5
5 to
+
1
50
J
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
YWW
JEx0yG
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
_
C/W
_
C/W
Y
WW
=
Y
e
ar
= Work Week
Thermal Resistance, Junction−to−Case
R
3.12
q
JC
JA
JEx0y =
Device Code
x = 7 or 8
Thermal Resistance, Junction−to−Ambient
R
83.3
q
y = 0, 2, or 3
G
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting
T
e
chniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
December, 2013 − Rev. 12
MJE700/D
MJE700G, MJE702G, MJE703G (PNP), MJE800G, MJE802G, MJE803G (NPN)
ELECTRICAL CHARACTERISTICS
(T =
25
_
C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
V
Vdc
(BR)CEO
(I =
50 mAdc, I
= 0)
MJE700G, MJE800G
MJE702G, MJE703G, MJE802G, MJE803G
C
B
60
80
−
−
Collector Cutoff Current
I
m
Adc
CEO
CBO
(V =
60 Vdc, I
= 0)
CE
B
MJE700G, MJE800G
(V =
80 Vdc, I
= 0)
−
−
100
100
CE
B
MJE702G, MJE703G, MJE802G, MJE803G
Collector Cutoff Current
I
m
Adc
(V =
Rated BV
(V =
Rated BV
CB
, I
= 0)
, I
= 0, T
= 100
_
C)
E
−
−
100
500
CB
CEO
CEO
E
C
Emitter Cutoff Current
(V =
5.0 Vdc, I
= 0)
I
mAdc
EBO
−
2.0
BE
C
ON CHARACTERISTICS
h
FE
−
(I =
1.5 Adc, V
= 3.0 Vdc)
C
CE
MJE700G, MJE702G, MJE800G, MJE802G
(I =
2.0 Adc, V
= 3.0 Vdc)
750
750
100
−
−
−
C
CE
MJE703G, MJE803G
(I =
4.0 Adc, V
= 3.0 Vdc)
C
CE
All devices
V
Vdc
Vdc
CE(sat)
(I =
1.5 Adc, I
= 30 mAdc)
C
B
MJE700G, MJE702G, MJE800G, MJE802G
(I =
2.0 Adc, I
= 40 mAdc)
−
−
−
2.5
2.8
3.0
C
B
MJE703G, MJE803G
(I =
4.0 Adc, I
= 40 mAdc)
C
B
All devices
V
BE(on)
(I =
1.5 Adc, V
= 3.0 Vdc)
C
CE
MJE700G, MJE702G, MJE800G, MJE802G
(I =
2.0 Adc, V
= 3.0 Vdc)
−
−
−
2.5
2.5
3.0
C
CE
MJE703G, MJE803G
(I =
4.0 Adc, V
= 3.0 Vdc)
C
CE
All devices
DYNAMIC CHARACTERISTICS
Small−Signal Current Gain
h
fe
−
(I =
1.5 Adc, V
= 3.0 Vdc, f = 1.0 MHz)
1.0
−
C
CE
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse
T
e
st: Pulse Width
≤
300
m
s, Duty Cycle
≤
2.0%.
50
40
30
20
10
0
25
50
75
100
125
150
T ,
CASE TEMPERATURE (
°
C)
C
Figure 1. Power Derating
2
MJE700G, MJE702G, MJE703G (PNP), MJE800G, MJE802G, MJE803G (NPN)
4.0
V
V
CC
I /I
= 250
= 30 V
I
= I
CC
B1 B2
R
& R
VARIED TO OBTAIN DESIRED CURRENT LEVELS
C
B
-ꢂ30 V
t
s
T =
25
°
C
C
B
J
ꢃD ,
MUST BE FAST RECOVERY TYPE, e.g.:
1
ꢃꢃ1N5825 USED ABOVE I
≈
100 mA
2.0
B
R
C
ꢃꢃMSD6100 USED BELOW I
≈
100 mA
SCOPE
B
TUT
t
f
V
2
R
B
APPROX
+ꢂ8.0 V
1.0
0.8
≈
6.0 k
≈
150
51
D
1
t
0
r
BE(off)
2.0
0.6
0.4
V
1
APPROX
-12 V
+ 4.0 V
For t
and t , D
id disconnected
t @
V
d
= 0
25
m
s
d
r
1
PNP
NPN
and V
= 0, R
and R
are varied
2
B
C
t , t
≤
10 ns
DUTY CYCLE = 1.0%
r
f
to obtain desired test currents.
0.2
0.04
For NPN test circuit, reverse diode,
polarities and input pulses.
0.1
0.2
0.4 0.6
1.0
4.0
0.06
I ,
COLLECTOR CURRENT (AMP)
C
Figure 2. Switching Times Test Circuit
Figure 3. Switching Times
1.0
0.7
D = 0.5
0.2
0.5
0.3
0.2
P
(pk)
0.1
q
q
(t) = r(t)
q
JC
JC
JC
0.05
= 3.12
°
C/W MAX
0.1
0.07
0.05
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
0.01
t
1
t
2
1
T
– T
= P
q
(t)
C (pk)
JC
J(pk)
DUTY CYCLE, D = t
/t
1 2
0.03
0.02
SINGLE PULSE
0.01
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20 30
50
100
200 300
500 1000
t, TIME (ms)
Figure 4. Thermal Response (MJE700, 800 Series)
ACTIVE−REGION SAFE−OPERATING AREA
10
10
7.0
7.0
5.0ꢁms
1.0ꢁms
100ꢁ
m
s
5.0ꢁms
5.0
5.0
1.0ꢁms
100ꢁ
m
s
3.0
2.0
3.0
2.0
dc
T =
150
°
C
dc
T =
150
°
C
J
J
1.0
0.7
0.5
1.0
0.7
0.5
BONDING WIRE LIMITED
THERMALLY LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED
@ T
= 25
°
C (SINGLE PULSE)
@ T
= 25
°
C (SINGLE PULSE)
C
SECOND BREAKDOWN LIMITED
C
SECOND BREAKDOWN LIMITED
0.3
0.2
0.3
0.2
MJE702, 703
MJE700
MJE802, 803
MJE800
0.1
5.0
0.1
5.0
7.0
10
20
30
50
70
100
7.0
10
20
30
50
70
100
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. MJE700 Series
Figure 6. MJE800 Series
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
T is
variable depending on conditions. Second breakdown
C
= 150
_
C;
J(pk)
breakdown. Safe operating area curves indicate I
− V
pulse limits are valid for duty cycles to 10% provided T
C
CE
J(pk)
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
< 150
_
C. T
J(pk)
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
3
MJE700G, MJE702G, MJE703G (PNP), MJE800G, MJE802G, MJE803G (NPN)
PNP
NPN
MJE700 Series
MJE800 Series
6.0 k
6.0 k
V
CE
= 3.0 V
V
CE
= 3.0 V
T =
125
°
C
J
T =
125
°
C
J
4.0 k
3.0 k
4.0 k
3.0 k
25
°
C
2.0 k
2.0 k
25
°
C
-ꢂ55
°
C
-ꢂ55
°
C
1.0 k
800
1.0 k
800
600
600
400
300
400
300
0.04 0.06
0.1
0.2
0.4 0.6
1.0
2.0
4.0
0.04 0.06
0.1
0.2
0.4 0.6
1.0
2.0
4.0
I ,
COLLECTOR CURRENT (AMP)
C
I ,
COLLECTOR CURRENT (AMP)
C
Figure 7. DC Current Gain
3.4
3.0
2.6
2.2
1.8
1.4
3.4
T =
25
°
C
J
T =
25
°
C
J
I
=
0.5 A
C
3.0
2.6
2.2
1.8
I
=
0.5 A
C
1.0 A
2.0 A
4.0 A
1.0 A
2.0 A
4.0 A
1.4
1.0
0.6
1.0
0.6
0.1 0.2
0.5 1.0
2.0
5.0 10
20
50 100
0.1
0.2
0.5
1.0 2.0
5.0
10
20
50 100
I ,
BASE CURRENT (mA)
B
I ,
BASE CURRENT (mA)
B
Figure 8. Collector Saturation Region
2.2
1.8
1.4
1.0
0.6
0.2
2.2
T =
25
°
C
T =
25
°
C
J
J
1.8
V
@ I
/I =
250
B
V
@ I
/I =
250
BE(sat) C
B
BE(sat)
C
V
BE
@ V
= 3.0 V
CE
1.4
1.0
0.6
0.2
V
BE
@ V
= 3.0 V
CE
V
@ I
/I =
250
C B
CE(sat)
V
@ I
/I =
250
B
CE(sat)
C
0.04 0.06
0.1
0.2
0.4 0.6
1.0
2.0
4.0
0.04 0.06
0.1
0.2
0.4 0.6
1.0
2.0
4.0
I ,
COLLECTOR CURRENT (AMP)
C
I ,
COLLECTOR CURRENT (AMP)
C
Figure 9. “On” Voltages
4
MJE700G, MJE702G, MJE703G (PNP), MJE800G, MJE802G, MJE803G (NPN)
ORDERING INFORMATION
Device
Package
Shipping
MJE700G
MJE702G
MJE703G
MJE800G
MJE802G
MJE803G
TO−225
(Pb−Free)
50 Units / Bulk
TO−225
(Pb−Free)
50 Units / Bulk
50 Units / Bulk
50 Units / Bulk
50 Units / Bulk
50 Units / Bulk
TO−225
(Pb−Free)
TO−225
(Pb−Free)
TO−225
(Pb−Free)
TO−225
(Pb−Free)
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO
−
225
CASE 77
−
09
ISSUE AD
4
DATE 25 MAR 2015
1
3
2
2
1
3
FRONT VIEW
BACK VIEW
SCALE 1:1
NOTES:
E
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. NUMBER AND SHAPE OF LUGS OPTIONAL.
A1
Q
A
MILLIMETERS
PIN 4
BACKSIDE TAB
DIM MIN
MAX
3.00
1.50
0.90
0.88
0.63
11.10
7.80
2.54
16.63
2.54
3.30
4.20
A
A1
b
2.40
1.00
0.60
0.51
0.39
10.60
7.40
2.04
14.50
1.27
2.90
3.80
D
b2
c
P
D
E
1
2
3
e
L
L1
P
Q
L1
GENERIC
MARKING DIAGRAM*
L
YWW
XX
XXXXXG
2X
b2
Y
=
Y
e
ar
WW
= Work Week
XXXXX = Device Code
= Pb
−
Free Package
e
2X
c
G
b
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present.
FRONT VIEW
SIDE VIEW
STYLE 1:
STYLE 2:
STYLE 3:
PIN 1.
BASE
STYLE 4:
STYLE 5:
PIN 1.
MT 1
PIN 1.
EMITTER
2., 4.
COLLECTOR
3. BASE
PIN 1.
CATHODE
2., 4.
ANODE
3. GATE
PIN 1.
ANODE 1
2., 4.
ANODE 2
3. GATE
2., 4.
COLLECTOR
3. EMITTER
2., 4.
MT 2
3. GATE
STYLE 6:
STYLE 7:
STYLE 8:
STYLE 9:
STYLE 10:
PIN 1.
CATHODE
2., 4.
GATE
3. ANODE
PIN 1.
MT 1
2., 4.
GATE
3. MT
2
PIN 1.
SOURCE
2., 4.
GATE
3. DRAIN
PIN 1.
GATE
2., 4.
DRAIN
3. SOURCE
PIN 1.
SOURCE
2., 4.
DRAIN
3. GATE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42049B
TO
−
225
PAGE 1 OF 1
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