onsemi-MJH11022G
| Part # | onsemi-MJH11022G |
Download  | onsemi-MJH11022G |
MJH11017, MJH11019,
MJH11021ꢀ(PNP)
MJH11018, MJH11020,
MJH11022ꢀ(NPN)
Complementary Darlington
Silicon Power
T
r
ansistors
These devices are designed for use as general purpose amplifiers,
low frequency switching and motor control applications.
15 AMPERE DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
Features
•
High DC Current Gain @ 10 Adc — h
= 400 Min (All Types)
FE
150−250 VOLTS, 150 WATTS
•
Collector−Emitter Sustaining
V
o
ltage
V
= 150 Vdc (Min) — MJH11018, 17
CEO(sus)
NPN
PNP
= 200 Vdc (Min) — MJH11020, 19
= 250 Vdc (Min) — MJH11022, 21
COLLECTOR 2
COLLECTOR 2
•
Low Collector−Emitter Saturation
V
o
ltage
BASE
1
BASE
1
V
= 1.2 V (Typ) @ I
= 5.0 A
CE(sat)
C
= 1.8 V (Typ) @ I
= 10 A
C
•
Monolithic Construction
•
These are Pb−Free Devices
EMITTER 3
EMITTER 3
MJH11018
MJH11020
MJH11022
MJH11017
MJH11019
MJH11021
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Collector−Emitter Voltage
V
CEO
Vdc
MJH11018, MJH11017
MJH11020, MJH11019
MJH11022, MJH11021
150
200
250
SOT−93
(TO−218)
CASE 340D
STYLE 1
Collector−Base Voltage
V
CB
Vdc
MJH11018, MJH11017
MJH11020, MJH11019
MJH11022, MJH11021
150
200
250
1
2
Emitter−Base Voltage
V
5.0
Vdc
Adc
3
EB
Collector Current
− Continuous
− Peak (Note 1)
I
15
30
C
TO−247
CASE 340L
STYLE 3
Base Current
I
B
0.5
Adc
T
o
tal Device Dissipation @ T
= 25
_
C
P
150
1.2
W
C
D
Derate above 25
_
C
W/
_
C
_
C
Operating and Storage Junction
T
e
mperature
T , T
–
ꢀ
65 to
+
ꢀ
150
J
stg
Range
NOTE: Effective
June 2012 this device will
be available only in the TO−247
THERMAL CHARACTERISTICS
package. Reference FPCN# 16827.
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
R
0.83
_
C/W
q
JC
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
1. Pulse
T
e
st: Pulse Width = 5.0 ms, Duty Cycle
v
10%.
©
Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
August, 2016 − Rev. 10
MJH11017/D
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
MARKING DIAGRAMS
TO−247
TO−218
MJH110xx
AYWWG
AYWWG
MJH110xx
1 BASE
3 EMITTER
2 COLLECTOR
1 BASE
3 EMITTER
2 COLLECTOR
A
Y
= Assembly Location
=
Y
e
ar
WW
G
= Work Week
= Pb−Free Package
MJH110xx =
Device Code
xx = 17, 19, 21, 18, 20, 22
ORDERING INFORMATION
Device Order Number
Package Type
Shipping
MJH11017G
MJH11018G
MJH11019G
MJH11020G
MJH11021G
MJH11022G
MJH11017G
MJH11018G
MJH11019G
MJH11020G
MJH11021G
MJH11022G
TO−218
(Pb−Free)
30 Units / Rail
TO−218
(Pb−Free)
30 Units / Rail
30 Units / Rail
30 Units / Rail
30 Units / Rail
30 Units / Rail
30 Units / Rail
30 Units / Rail
30 Units / Rail
30 Units / Rail
30 Units / Rail
30 Units / Rail
TO−218
(Pb−Free)
TO−218
(Pb−Free)
TO−218
(Pb−Free)
TO−218
(Pb−Free)
TO−247
(Pb−Free)
TO−247
(Pb−Free)
TO−247
(Pb−Free)
TO−247
(Pb−Free)
TO−247
(Pb−Free)
TO−247
(Pb−Free)
2
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
160
140
120
100
80
60
40
20
0
0
20
40
60
80
100
120
140
160
T ,
CASE TEMPERATURE (
°
C)
C
Figure 1. Power Derating
ELECTRICAL CHARACTERISTICS
(T =
25
_
C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)
V
Vdc
CEO(sus)
(I =
0.1 Adc, I
= 0)
MJH11017, MJH11018
MJH11019, MJH11020
MJH11021, MJH11022
C
B
150
200
250
−
−
−
Collector Cutoff Current
(V =
75 Vdc, I
= 0)
I
mAdc
mAdc
CEO
MJH11017, MJH11018
MJH11019, MJH11020
MJH11021, MJH11022
CE
B
−
−
−
1.0
1.0
1.0
(V =
100 Vdc, I
= 0)
CE
B
(V =
125 Vdc, I
= 0)
CE
B
Collector Cutoff Current
(V =
Rated V
, V
I
CEV
= 1.5 Vdc)
= 1.5 Vdc, T
= 150
_
C)
CE
CB
BE(off)
BE(off)
−
−
0.5
5.0
(V =
Rated V
, V
CE
CB
J
Emitter Cutoff Current (V
= 5.0 Vdc I
= 0)
I
−
2.0
mAdc
−
BE
ON CHARACTERISTICS
(Note 2)
DC Current Gain
C
EBO
h
FE
(I =
10 Adc, V
= 5.0 Vdc)
400
100
15,000
−
C
CE
(I =
15 Adc, V
= 5.0 Vdc)
C
CE
Collector−Emitter Saturation Voltage
(I =
10 Adc, I
= 100 mA)
V
Vdc
CE(sat)
−
−
2.5
4.0
C
B
(I =
15 Adc, I
= 150 mA)
C
B
Base−Emitter On Voltage (I
= 10 A, V
= 5.0 Vdc)
V
−
−
2.8
3.8
Vdc
Vdc
C
CE
BE(on)
V
BE(sat)
Base−Emitter Saturation Voltage (I
= 15 Adc, I
= 150 mA)
C
B
DYNAMIC CHARACTERISTICS
Current−Gain Bandwidth Product (I
= 10 Adc, V
= 3.0 Vdc, f = 1.0 MHz)
f
T
3.0
−
−
C
CE
Output Capacitance
(V =
10 Vdc, I
= 0, f = 0.1 MHz)
MJH11018, MJH11020, MJH11022
MJH11017, MJH11019, MJH11021
C
−
−
400
600
pF
ob
CB
E
Small−Signal Current Gain (I
= 10 Adc, V
= 3.0 Vdc, f = 1.0 kHz)
h
fe
75
−
−
C
CE
SWITCHING CHARACTERISTICS
Typical
Characteristic
Symbol
NPN
PNP
Unit
Delay Time
Rise Time
Storage Time
Fall Time
t
150
75
ns
d
t
1.2
4.4
2.5
0.5
2.7
2.5
m
s
m
s
m
s
r
(V =
100
V
, I
=
1
0 A, I
= 100 mA
CC
C
B
V
BE(off)
= 5.0 V) (See Figure 2)
t
s
t
f
2. Pulse
T
e
st: Pulse Width = 300
m
s, Duty Cycle
v
2.0%.
3
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
V
CC
-100 V
R
C
SCOPE
TUT
R
& R
varied to obtain desired current levels
V2
APPROX
+12 V
0
R
B
C
B
D ,
must be fast recovery types, e.g.:
1
1N5825 used above I
≈
100 mA
B
MSD6100 used below I
≈
100 mA
51
D
1
B
V1
APPROX
-ꢀ8.0 V
+ꢀ4.0 V
25
m
s
For t
and t , D
is disconnected
d
r
1
and V2 = 0
t , t
≤
10 ns
r
f
Duty Cycle = 1.0%
For NPN test circuit, reverse diode and voltage polarities.
Figure 2. Switching Times Test Circuit
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
P
(pk)
R
R
(t) = r(t) R
q
JC
0.1
0.07
0.05
q
q
JC
JC
0.05
0.02
= 0.83
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t
1
0.03
0.02
0.01
READ TIME AT t
t
1
2
T
– T
= P
C
R (t)
q
JC
SINGLE PULSE
J(pk)
(pk)
DUTY CYCLE, D = t
/t
1
2
0.01
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
t, TIME (ms)
10
20 30
50
100
200 300
500
1000
Figure 3. Thermal Response
FORWARD BIAS
T
= 25
°
C SINGLE PULSE
C
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
30
20
0.1 ms
breakdown. Safe operating area curves indicate I
− V
C
CE
10
0.5 ms
1.0 ms
5.0 ms
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
5.0
2.0
1.0
0.5
dc
WIRE BOND LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
The data of Figure 4 is based on T
variable depending on conditions. Second breakdown pulse
= 150
_
C; T
is
J(pk)
C
limits are valid for duty cycles to 10% provided T
J(pk)
MJH11017, MJH11018
MJH11019, MJH11020
MJH11021, MJH11022
v
150
_
C. T
may be calculated from the data in
0.2
0
J(pk)
Figure 3. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
2.0 3.0
5.0 10
20 30
50
100 150
250
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 4. Maximum Rated Forward Bias
Safe Operating Area (FBSOA)
4
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
REVERSE BIAS
30
20
10
0
For inductive loads, high voltage and high current must be
sustained simultaneously during turn−off, in most cases,
L = 200
m
H
I /I
≥
50
with the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping, RC
snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage−current conditions during
reverse biased turn−off. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 5 gives RBSOA characteristics.
C
B1
= 100
°
C
T
C
V
R
= 0ꢀ-ꢀ5.0 V
BE(off)
= 47
W
BE
DUTY CYCLE = 10%
MJH11017, MJH11018
MJH11019, MJH11020
MJH11021, MJH11022
0
20
60
100
140
180
220
260
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Maximum Rated Reverse Bias
Safe Operating Area (RBSOA)
PNP
NPN
10,000
7000
10,000
V
CE
= 5.0 V
V
CE
= 5.0 V
5000
5000
T
= 150
°
C
25
°
C
3000
2000
C
T
= 150
°
C
2000
1000
500
C
1000
500
25
°
C
-ꢀ55
°
C
-ꢀ55
°
C
200
100
200
100
0.2 0.3
0.5 0.7
1.0
3.0
5.0
10 15
0.2 0.3
0.5 0.7 1.0
3.0
5.0 7.0 10
15
I ,
COLLECTOR CURRENT (AMPS)
C
I ,
COLLECTOR CURRENT (AMPS)
C
Figure 6. DC Current Gain
5
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
PNP
NPN
4.5
4.0
3.5
3.0
2.5
2.0
4.5
T =
25
°
C
J
T =
25
°
C
J
4.0
3.5
3.0
I
= 15 A
= 10 A
C
2.5
2.0
I
C
= 15 A
I
C
I
= 10 A
C
1.5
1.0
1.5
1.0
I
C
= 5.0 A
I
C
= 5.0 A
1.0 2.0
3.0 5.0
10
20 30
50 100
200 300
500 1000
1.0
2.0 3.0
5.0
10
20 30
50 100
20
0
3
00 500 1000
I ,
BASE CURRENT (mA)
B
I ,
BASE CURRENT (mA)
B
Figure 7. Collector Saturation Region
PNP
NPN
4.0
4.0
3.5
3.0
2.5
2.0
1.5
T =
25
°
C
J
3.5
T =
25
°
C
J
3.0
2.5
V
@ I
/I =
100
B
V @
I /I
= 100
BE(sat) C
B
BE(sat)
C
2.0
1.5
V
BE
@ V
= 5.0 V
CE
V
BE
@ V
= 5.0 V
CE
1.0
0.5
1.0
0.5
V
@ I
/I =
100
C B
V
@ I
/I =
100
C B
CE(sat)
CE(sat)
0.2 0.3
0.5 0.7
1.0
2.0 3.0
5.0 7.0
10
20
0.2
0.5 0.7 1.0
2.0
5.0
10
20
I ,
COLLECTOR CURRENT (AMPS)
C
I ,
COLLECTOR CURRENT (AMPS)
C
Figure 8. “On” Voltages
PNP
NPN
MJH11018
MJH11020
MJH11022
MJH11017
MJH11019
MJH11021
COLLECTOR
COLLECTOR
BASE
BASE
EMITTER
EMITTER
Figure 9. Darlington Schematic
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT
−
93 (TO
−
218)
CASE 340D
−
02
ISSUE E
DATE 01/03/2002
NOTES:
SCALE 1:1
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING
DIMENSION: MILLIMETER.
C
E
Q
B
MILLIMETERS
INCHES
MIN
DIM MIN
MAX
20.35
15.20
MAX
0.801
0.598
0.193
0.051
0.054
0.219
0.118
0.031
A
B
C
D
E
G
H
J
—
14.70
4.70
1.10
1.17
5.40
2.00
0.50
—
0.579
U
4
4.90 0.185
1.30 0.043
1.37 0.046
5.55 0.213
3.00 0.079
0.78 0.020
A
L
S
1
2
3
K
K
L
31.00 REF
1.220 REF
—
4.00
16.20
4.10 0.158
18.20 0.701
—
0.638
0.161
0.717
Q
S
U
V
17.80
4.00 REF
1.75 REF
0.157 REF
0.069
J
H
D
MARKING DIAGRAM
V
G
STYLE 1:
PIN 1.
BASE
STYLE 2:
AYWW
xxxxx
PIN 1.
ANODE
2. CATHODE
3. ANODE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
4. CATHODE
A
Y
= Assembly Location
=
Y
e
ar
WW
= Work Week
xxxxx =
Device Code
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42643B
SOT
−
93
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO
−
247
CASE 340L
−
02
ISSUE F
DATE 26 OCT 2011
SCALE 1:1
NOTES:
−
T
−
1. DIMENSIONING
AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING
DIMENSION: MILLIMETER.
C
−
B
−
E
MILLIMETERS
INCHES
DIM MIN
MAX
21.08
16.26
5.30
MIN
MAX
8.30
U
L
A
B
C
D
E
F
20.32
15.75
4.70
1.00
1.90
1.65
0.800
0.620
0.185
0.040
0.075
0.065
N
0.640
0.209
0.055
0.102
0.084
4
A
K
1.40
2.60
−
Q
−
M
M
T B
0.63 (0.025)
2.13
1
2
3
G
H
J
5.45 BSC
0.215 BSC
1.50
0.40
19.81
5.40
4.32
—
2.49
0.80
20.83
6.20
5.49
4.50
3.65
0.059
0.016
0.780
0.212
0.170
—
0.098
0.031
0.820
0.244
0.216
0.177
0.144
P
K
L
−
Y
−
N
P
Q
U
W
3.55
0.140
6.15 BSC
0.242 BSC
2.87
3.12
0.
1
1
3
0.123
W
J
F
2 PL
H
GENERIC
G
MARKING DIAGRAM*
D
3 PL
M
S
Y Q
0.25 (0.010)
STYLE 1:
PIN 1.
GATE
2. DRAIN
STYLE 2:
PIN 1.
ANODE
STYLE 3:
STYLE 4:
PIN 1.
GATE
XXXXXXXXX
AYWWG
PIN 1.
BASE
2. COLLECTOR
3. EMITTER
2. CATHODE
(S)
3. ANODE
2
4. CATHODES
(S)
2. COLLECTOR
3. EMITTER
4. COLLECTOR
3. SOURCE
4. DRAIN
4. COLLECTOR
STYLE 5:
STYLE 6:
PIN 1.
CATHODE
2. ANODE
3. GATE
PIN 1.
MAIN TERMINAL 1
2. MAIN
TERMINAL 2
3. GATE
4. ANODE
4. MAIN
TERMINAL 2
XXXXX =
Specific Device Code
A
Y
= Assembly Location
=
Y
e
ar
WW
G
= Work Week
= Pb
−
Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Fre
e
i
ndicator, “G” or microdot “
G
”,
may or may not be present.
98ASB15080C
ON SEMICONDUCTOR STANDARD
DOCUMENT NUMBER:
STATUS:
Electronic versions are uncontrolled except when
accessed directly from the Document Repository. Printed
versions are uncontrolled except when stamped
“CONTROLLED COPY” in red.
NEW STANDARD:
D
E
S
C
R
I
P
T
ION: TO
−
247
PAGE 1 OF 2
DOCUMENT NUMBER:
98ASB15080C
PAGE 2 OF 2
ISSUE
REVISION
DATE
D
CHANGE OF OWNERSHIP FROM MOTOROLA TO ON SEMICONDUCTOR. DIM A
WAS 20.80
−
21.46/0.819
−
0.845. DIM K WAS 19.81
−
20.32/0.780
−
0.800. UPDATED
STYLE 1, ADDED STYLES 2, 3, & 4. REQ. BY L. HAYES.
25 AUG 2000
E
F
DIM E MINIMUM WAS 2.20/0.087. DIM K MINIMUM WAS 20.06/0.790. ADDED
GENERIC MARKING DIAGRAM. REQ. BY S. ALLEN.
26 FEB 2010
26 OCT 2011
ADDED STYLES 5 AND 6. REQ. BY J. PEREZ.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC).
SCILLC reserves the right to make changes without further notice
to any products herein.
SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any
liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical”
parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over
time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
SCILLC does not convey any license under
its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body,
or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
may occur.
Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of
personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.
SCILLC is an Equal Opportunity/Affirmative Action Employer.
This literature is subject to all applicable copyright laws and is not for resale in any manner.
©
Semiconductor Components Industries, LLC, 2011
Case Outline Number:
Octobe
r
,
2
011
−
Rev. 02F
340L
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800
−
282
−
9855
T
o
ll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
◊
