onsemi-MJW1302AG
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MJW3281A (NPN)
MJW1302A (PNP)
Complementary NPN-PNP
Silicon Power Bipolar
Transistors
The MJW3281A and MJW1302A are PowerBas
e
t
power
transistors for high power audio, disk head positioners and other linear
applications.
15 AMPERES
COMPLEMENTARY
SILICON POWER TRANSISTORS
230 VOLTS 200 WATTS
Features
•
Designed for 100 W Audio Frequency
•
Gain Complementary:
Gain Linearity from 100 mA to 7 A
h
= 45 (Min) @ I
= 8 A
FE
C
•
Low Harmonic Distortion
•
High Safe Operation Area
−
1 A/100 V @ 1 Second
•
High f
−
30 MHz Typical
T
1
2
•
Pb
−
Free Packages are Available*
TO
−
247
3
CASE 340L
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
J
Rating
Collector
−
Emitter Voltage
Collector
−
Base Voltage
Emitter
−
Base Voltage
Symbol
Value
230
230
5.0
Unit
Vdc
Vdc
Vdc
MARKING DIAGRAM
V
CEO
CBO
V
V
V
EBO
Collector
−
Emitter Voltage
−
1.5 V
230
Vdc
Adc
CEX
MJWxxxxA
AYWWG
Collector Current
−
Continuous
I
C
15
25
Base Current
−
Continuous
I
B
1.5
Adc
1 BASE
3 EMITTER
T
o
tal Power Dissipation @ T
= 25
°
C
P
D
200
1.43
W
W/
°
C
C
Derate Above 25
°
C
2 COLLECTOR
Operating and Storage Junction
T
e
mperature Range
T , T
−
ꢀꢀ
65 to +150
°
C
J
stg
xxxx =
3281 or 1302
A
Y
= Assembly Location
= Year
THERMAL CHARACTERISTICS
Characteristic
WW =
Work Week
Symbol
Max
0.625
40
Unit
°
C/W
°
C/W
G
= Pb
−
Free Package
Thermal Resistance, Junction
−
to
−
Case
Thermal Resistance, Junction
−
to
−
Ambient
R
q
JC
R
q
JA
ORDERING INFORMATION
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse
T
e
st: Pulse Width = 5 ms, Duty Cycle < 10%.
Device
Package
Shipping
MJW3281A
TO
−
247
30 Units/Rail
30 Units/Rail
MJW3281AG
TO
−
247
(Pb
−
Free)
MJW1302A
TO
−
247
30 Units/Rail
30 Units/Rail
MJW1302AG
TO
−
247
(Pb
−
Free)
*For additional information on our Pb
−
Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting
T
e
chniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
March, 2010
−
Rev. 4
MJW3281A/D
MJW3281A (NPN) MJW1302A (PNP)
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector
−
Emitter Sustaining Voltage
V
Vdc
m
Adc
m
Adc
CEO(sus)
(I =
100 mAdc, I
= 0)
230
−
−
−
−
−
50
5
C
B
Collector Cutoff Current
I
CBO
(V =
230 Vdc, I
= 0)
CB
E
Emitter Cutoff Current
I
EBO
(V =
5 Vdc, I
= 0)
−
EB
C
SECOND BREAKDOWN
Second Breakdown Collector with Base Forward Biased
(V =
50 Vdc, t = 1 s (non
−
repetitive)
I
Adc
S/b
4
1
−
−
−
−
CE
(V =
100 Vdc, t = 1 s (non
−
repetitive)
CE
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I =
100 mAdc, V
= 5 Vdc)
50
50
50
50
50
45
12
125
−
200
200
200
200
200
−
C
CE
(I =
1 Adc, V
= 5 Vdc)
C
CE
(I =
3 Adc, V
= 5 Vdc)
−
C
CE
(I =
5 Adc, V
= 5 Vdc)
−
C
CE
(I =
7 Adc, V
= 5 Vdc)
115
−
C
CE
(I =
8 Adc, V
= 5 Vdc)
C
CE
(I =
15 Adc, V
= 5 Vdc)
35
−
C
CE
Collector
−
Emitter Saturation Voltage
(I =
10 Adc, I
= 1 Adc)
V
Vdc
Vdc
CE(sat)
−
−
0.4
2
2
C
B
Base
−
Emitter On Voltage
(I =
8 Adc, V
= 5 Vdc)
V
BE(on)
−
C
CE
DYNAMIC CHARACTERISTICS
Current
−
Gain
−
Bandwidth Product
f
MHz
pF
T
(I =
1 Adc, V
= 5 Vdc, f
= 1 MHz)
−
−
30
−
C
CE
test
Output Capacitance
C
ob
(V =
10 Vdc, I
= 0, f
= 1 MHz)
−
600
CB
E
test
2
MJW3281A (NPN) MJW1302A (PNP)
TYPICAL CHARACTERISTICS
PNP MJW1302A
NPN MJW3281A
60
50
40
30
20
50
40
30
20
V
CE
= 10 V
V
CE
= 10 V
5 V
5 V
T =
25
°
C
test
10
0
T =
25
°
C
J
test
J
10
0
f
= 1 MHz
f
= 1 MHz
0.1
1.0
10
0.1
1.0
I ,
COLLECTOR CURRENT (AMPS)
10
I ,
COLLECTOR CURRENT (AMPS)
C
C
Figure 1. Typical Current Gain
Bandwidth Product
Figure 2. Typical Current Gain
Bandwidth Product
PNP MJW1302A
NPN MJW3281A
1000
1000
25
°
C
T =
100
°
C
J
T =
100
°
C
J
25
°
C
100
100
-ꢁ25
°
C
-ꢁ25
°
C
V
CE
= 20 V
V
CE
= 20 V
10
10
0.1
1.0
10
100
0.1
1.0
10
100
I ,
COLLECTOR CURRENT (AMPS)
C
I ,
COLLECTOR CURRENT (AMPS)
C
Figure 3. DC Current Gain, V
CE
= 20 V
Figure 4. DC Current Gain, V
CE
= 20 V
PNP MJW1302A
NPN MJW3281A
1000
1000
25
°
C
T =
100
°
C
J
T =
100
°
C
J
25
°
C
100
100
-ꢁ25
°
C
-ꢁ25
°
C
V
CE
= 5 V
V
CE
= 5 V
10
10
0.1
1.0
10
100
0.1
1.0 10
I ,
COLLECTOR CURRENT (AMPS)
100
I ,
COLLECTOR CURRENT (AMPS)
C
C
Figure 5. DC Current Gain, V
CE
= 5 V
Figure 6. DC Current Gain, V
CE
= 5 V
3
MJW3281A (NPN) MJW1302A (PNP)
TYPICAL CHARACTERISTICS
PNP MJW1302A
NPN MJW3281A
45
40
35
30
25
20
15
10
45
40
35
30
25
20
15
10
I
B
= 2 A
1 A
1.5 A
I
B
= 2 A
1 A
1.5 A
0.5 A
0.5 A
5.0
0
T =
25
°
C
5.0
0
T =
25
°
C
J
J
25
0
5.0
10
15
20
25
0
5.0
10
15
20
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
V ,
COLLECTOR-EMITTER VOLTAGE (VOLTS)
CE
Figure 7. Typical Output Characteristics
PNP MJW1302A
Figure 8. Typical Output Characteristics
NPN MJW3281A
2.5
2.0
3.0
2.5
2.0
1.5
1.0
T =
25
°
C
C B
J
I /I
= 10
T =
25
°
C
C B
J
I /I
= 10
V
BE(sat)
1.5
1.0
V
BE(sat)
0.5
0
0.5
0
V
V
CE(sat)
CE(sat)
0.1
1.0
10
100
0.1
1.0
10
100
I ,
COLLECTOR CURRENT (AMPS)
C
I ,
COLLECTOR CURRENT (AMPS)
C
Figure 9. Typical Saturation Voltages
PNP MJW1302A
Figure 10. Typical Saturation Voltages
NPN MJW3281A
10
10
T =
25
°
C
J
T =
25
°
C
J
V
CE
= 5 V (DASHED)
V
CE
= 5 V (DASHED)
1.0
1.0
V
CE
= 20 V (SOLID)
V
CE
= 20 V (SOLID)
0.1
0.1
0.1
1.0
10
100
0.1
1.0
10
100
I ,
COLLECTOR CURRENT (AMPS)
C
I ,
COLLECTOR CURRENT (AMPS)
C
Figure 11. Typical Base
−
Emitter Voltage
Figure 12. Typical Base
−
Emitter Voltage
4
MJW3281A (NPN) MJW1302A (PNP)
PNP MJW1302A
NPN MJW3281A
100
10
100
10
10 mSec
10 mSec
100 mSec
100 mSec
1 Sec
1 Sec
1.0
0.1
1.0
0.1
1.0
10
100
1000
1.0
10
V ,
COLLECTOR EMITTER (VOLTS)
CE
100
1000
V
CE
, COLLECTOR EMITTER (VOLTS)
Figure 13. Active Region Safe Operating Area
Figure 14. Active Region Safe Operating Area
There are two limitations on the power handling ability of
a transistor; average junction temperature and secondary
= 150
°
C;
J(pk)
T
is variable depending on conditions. At high case
C
breakdown. Safe operating area curves indicate I
−
V
temperatures, thermal limitations will reduce the power than
can be handled to values less than the limitations imposed by
second breakdown.
C
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
TYPICAL CHARACTERISTICS
PNP MJW1302A
NPN MJW3281A
10000
10000
C
ib
C
ib
C
ob
1000
1000
C
ob
T =
25
°
C
test
T =
25
°
C
J
test
J
f
= 1 MHz
f
= 1 MHz
100
100
0.1
1.0
10
100
0.1
1.0
10
100
V ,
REVERSE VOLTAGE (VOLTS)
R
V ,
REVERSE VOLTAGE (VOLTS)
R
Figure 15. MJW1302A Typical Capacitance
Figure 16. MJW3281A Typical Capacitance
PowerBase is a trademark of Semiconductor Components Industries, LLC.
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO
−
247
CASE 340L
ISSUE G
DATE 06 OCT 2021
SCALE 1:1
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXXX =
Specific Device Code
STYLE 1:
PIN 1.
GATE
STYLE 2:
PIN 1.
ANODE
2. CATHODE
(S)
STYLE 3:
PIN 1.
BASE
2. COLLECTOR
STYLE 4:
PIN 1.
GATE
2. COLLECTOR
3. EMITTER
A
Y
= Assembly Location
=
Y
e
ar
2. DRAIN
3. SOURCE
4. DRAIN
3. ANODE
2
4. CATHODES
(S)
3. EMITTER
4. COLLECTOR
4. COLLECTOR
WW
G
= Work Week
= Pb
−
Free Package
STYLE 5:
STYLE 6:
PIN 1.
CATHODE
2. ANODE
3. GATE
PIN 1.
MAIN TERMINAL 1
2. MAIN
TERMINAL 2
3. GATE
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”, may
or may not be present. Some products may
not follow the Generic Marking.
4. ANODE
4. MAIN
TERMINAL 2
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB15080C
TO
−
247
PAGE 1 OF 1
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onsemi
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Semiconductor Components Industries, LLC, 2021
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.
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−
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:
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