onsemi-MJW21194G
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MJW21193 (PNP)
MJW21194 (NPN)
Silicon Power
T
r
ansistors
The MJW21193 and MJW21194 utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.
Features
16 AMPERES
•
Total Harmonic Distortion Characterized
•
High DC Current Gain
COMPLEMENTARY SILICON
POWER TRANSISTORS
250 VOLTS, 200 WATTS
•
Excellent Gain Linearity
•
High SOA
•
These Devices are Pb
−
Free and are RoHS Compliant
NPN
PNP
MAXIMUM RATINGS
COLLECTOR 2, 4
COLLECTOR 2, 4
Rating
Symbol
Value
250
400
5.0
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Adc
Collector
−
Emitter Voltage
Collector
−
Base Voltage
V
CEO
V
CBO
V
EBO
1
1
BASE
BASE
Emitter
−
Base Voltage
EMITTER 3
EMITTER 3
Collector
−
Emitter Voltage
−
1.5 V
Collector Current
−
Continuous
Base Current
−
Continuous
V
CEX
400
16
I
C
MARKING DIAGRAM
I
30
CM
I
B
5.0
T
o
tal Power Dissipation @ T
= 25
°
C
Derate Above 25
°
C
P
D
200
1.43
W
W/
°
C
C
MJW2119x
AYWWG
Operating and Storage Junction
T
e
mperature Range
T , T
−
ꢀ
65 to
+150
°
C
J
stg
1
2
3
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse
T
e
st: Pulse Width = 5
m
s, Duty Cycle
≤
10%.
1
3
TO
−
247
BASE
EMITTER
CASE 340L
STYLE 3
2 COLLECTOR
x
A
Y
= 3 or 4
= Assembly Location
=
Y
e
ar
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
WW =
Work Week
G =
Pb
−
Free Package
Thermal Resistance,
Junction
−
to
−
Case
R
0.7
°
C/W
θ
JC
Thermal Resistance,
Junction
−
to
−
Ambient
R
40
°
C/W
θ
JA
ORDERING INFORMATION
Device
Package
Shipping
MJW21193G
TO
−
247
30 Units/Rail
(Pb
−
Free)
MJW21194G
TO
−
247
30 Units/Rail
(Pb
−
Free)
©
Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
September, 2013
−
Rev. 5
MJW21193/D
MJW21193 (PNP)
MJW21194 (NPN)
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector
−
Emitter Sustaining Voltage
(I =
100 mAdc, I
= 0)
V
250
−
−
−
−
−
−
Vdc
CEO(sus)
C
B
Collector Cutoff Current
(V =
200 Vdc, I
= 0)
I
100
100
100
μ
Adc
μ
Adc
μ
Adc
CEO
CE
B
Emitter Cutoff Current
(V =
5 Vdc, I
= 0)
I
−
EBO
CE
C
Collector Cutoff Current
(V =
250 Vdc, V
I
−
CEX
= 1.5 Vdc)
BE(off)
CE
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(V =
50 Vdc, t = 1 s (non
−
repetitive)
I
Adc
S/b
4.0
2.25
−
−
−
−
CE
(V =
80 Vdc, t = 1 s (non
−
repetitive)
CE
ON CHARACTERISTICS
DC Current Gain
h
FE
(I =
8 Adc, V
= 5 Vdc)
20
8
−
−
80
−
C
CE
(I =
16 Adc, I
= 5 Adc)
C
B
Base
−
Emitter On Voltage
(I =
8 Adc, V
= 5 Vdc)
V
−
−
2.2
Vdc
Vdc
BE(on)
C
CE
Collector
−
Emitter Saturation Voltage
(I =
8 Adc, I
= 0.8 Adc)
V
CE(sat)
−
−
−
−
1.4
4
C
B
(I =
16 Adc, I
= 3.2 Adc)
C
B
DYNAMIC CHARACTERISTICS
T
o
tal Harmonic Distortion at the Output
T
HD
%
V
RMS
= 28.3
V
, f = 1
k
Hz, P
= 100 W
h
FE
LOAD
RMS
unmatched
−
0.8
−
(Matched pair h
= 50 @ 5 A/5 V)
h
FE
FE
matched
−
0.08
−
−
Current Gain Bandwidth Product
f
T
4
−
MHz
pF
(I =
1 Adc, V
= 10 Vdc, f
= 1 MHz)
C
CE
test
Output Capacitance
(V =
10 Vdc, I
= 0, f
= 1
MHz)
test
C
−
−
500
ob
CB
E
PNP MJW21193
NPN MJW21194
6.5
8.0
V
CE
= 10 V
6.0
5.5
5.0
4.5
7.0
6.0
5.0
4.0
10 V
5 V
V
CE
= 5 V
3.0
2.0
1.0
4.0
3.5
T =
25
°
C
test
T =
25
°
C
J
test
J
f
= 1 MHz
f
= 1 MHz
3.0
0
0.1
1.0
10
0.1
1.0
10
I
C
COLLECTOR CURRENT (AMPS)
I COLLECTOR
CURRENT (AMPS)
C
Figure 1. Typical Current Gain
Bandwidth Product
Figure 2. Typical Current Gain
Bandwidth Product
2
MJW21193 (PNP)
MJW21194 (NPN)
TYPICAL CHARACTERISTICS
PNP MJW21193
NPN MJW21194
1000
100
10
1000
100
10
T =
100
°
C
J
T =
100
°
C
J
25
°
C
25
°
C
-ꢁ25
°
C
-ꢁ25
°
C
V
CE
= 20 V
V
CE
= 20 V
0.1
1.0
10
100
0.1
1.0
I COLLECTOR
CURRENT (AMPS)
C
10
100
I
C
COLLECTOR CURRENT (AMPS)
Figure 3. DC Current Gain, V
CE
= 20 V
PNP MJW21193
Figure 4. DC Current Gain, V
CE
= 20 V
NPN MJW21194
1000
100
10
1000
100
10
T =
100
°
C
J
T =
100
°
C
J
25
°
C
25
°
C
-ꢁ25
°
C
-ꢁ25
°
C
V
CE
= 5 V
V
CE
= 20 V
0.1
1.0
10
100
0.1
1.0
I COLLECTOR
CURRENT (AMPS)
C
10
100
I
C
COLLECTOR CURRENT (AMPS)
Figure 5. DC Current Gain, V
CE
= 5 V
Figure 6. DC Current Gain, V
CE
= 5 V
NPN MJW21194
PNP MJW21193
30
35
I
B
= 2 A
1.5 A
I
B
= 2 A
1 A
30
25
20
25
20
1.5 A
1 A
15
10
0.5 A
15
10
0.5 A
5.0
0
5.0
T =
25
°
C
J
T =
25
°
C
J
0
0
5.0
10
15
20
25
0
5.0
10
15
20
25
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
V ,
COLLECTOR-EMITTER VOLTAGE (VOLTS)
CE
Figure 7. Typical Output Characteristics
Figure 8. Typical Output Characteristics
3
MJW21193 (PNP)
MJW21194 (NPN)
TYPICAL CHARACTERISTICS
PNP MJW21193
NPN MJW21194
3.0
2.5
1.4
1.2
T =
25
°
C
C B
J
I /I
= 10
T =
25
°
C
C B
J
I /I
= 10
1.0
0.8
2.0
1.5
1.0
V
BE(sat)
0.6
0.4
V
BE(sat)
0.5
0
0.2
0
V
CE(sat)
V
CE(sat)
0.1
1.0
10
100
0.1
1.0
10
100
I ,
COLLECTOR CURRENT (AMPS)
C
I ,
COLLECTOR CURRENT (AMPS)
C
Figure 9. Typical Saturation Voltages
PNP MJW21193
Figure 10. Typical Saturation Voltages
NPN MJW21194
10
10
1.0
0.1
T =
25
°
C
J
T =
25
°
C
J
V
CE
= 20 V (SOLID)
1.0
V
CE
= 5 V (DASHED)
V
CE
= 20 V (SOLID)
V
CE
= 5 V (DASHED)
0.1
0.1
1.0
10
100
0.1
1.0
10
100
I ,
COLLECTOR CURRENT (AMPS)
C
I ,
COLLECTOR CURRENT (AMPS)
C
Figure 11. Typical Base
−
Emitter Voltage
Figure 12. Typical Base
−
Emitter Voltage
PNP MJW21193
NPN MJW21194
100
10
100
10
10 mSec
10 mSec
100 mSec
100 mSec
1 Sec
1 Sec
1.0
0.1
1.0
0.1
1.0
10
100
1000
1.0
10
V ,
COLLECTOR EMITTER (VOLTS)
CE
100
1000
V
CE
, COLLECTOR EMITTER (VOLTS)
Figure 13. Active Region Safe Operating Area
Figure 14. Active Region Safe Operating Area
4
MJW21193 (PNP)
MJW21194 (NPN)
There are two limitations on the power handling ability of
a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate I
−
V
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
= 150
°
C; T
is
J(pk) C
variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power than
can be handled to values less than the limitations imposed by
second breakdown.
C
CE
10000
10000
T
= 25
°
C
C
T
= 25
°
C
C
C
ib
C
ib
1000
100
1000
100
C
ob
C
ob
f
= 1 MHz)
(test)
f
= 1 MHz)
(test)
0.1
1.0
10
100
0.1
1.0
10
100
V ,
REVERSE VOLTAGE (VOLTS)
R
V ,
REVERSE VOLTAGE (VOLTS)
R
Figure 15. MJW21193 Typical Capacitance
Figure 16. MJW21194 Typical Capacitance
1.2
1.1
1.0
0.9
0.8
0.7
0.6
10
100
1000
FREQUENCY (Hz)
10000
100000
Figure 17. Typical Total Harmonic Distortion
5
MJW21193 (PNP)
MJW21194 (NPN)
+50 V
AUDIO PRECISION
MODEL ONE PLUS
TOTAL HARMONIC
DISTORTION
50
Ω
SOURCE
DUT
AMPLIFIER
ANALYZER
0.5
Ω
0.5
Ω
8.0
Ω
DUT
-50 V
Figure 18. Total Harmonic Distortion Test Circuit
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO
−
247
CASE 340L
ISSUE G
DATE 06 OCT 2021
SCALE 1:1
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXXX =
Specific Device Code
STYLE 1:
PIN 1.
GATE
STYLE 2:
PIN 1.
ANODE
2. CATHODE
(S)
STYLE 3:
PIN 1.
BASE
2. COLLECTOR
STYLE 4:
PIN 1.
GATE
2. COLLECTOR
3. EMITTER
A
Y
= Assembly Location
=
Y
e
ar
2. DRAIN
3. SOURCE
4. DRAIN
3. ANODE
2
4. CATHODES
(S)
3. EMITTER
4. COLLECTOR
4. COLLECTOR
WW
G
= Work Week
= Pb
−
Free Package
STYLE 5:
STYLE 6:
PIN 1.
CATHODE
2. ANODE
3. GATE
PIN 1.
MAIN TERMINAL 1
2. MAIN
TERMINAL 2
3. GATE
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”, may
or may not be present. Some products may
not follow the Generic Marking.
4. ANODE
4. MAIN
TERMINAL 2
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB15080C
TO
−
247
PAGE 1 OF 1
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Semiconductor Components Industries, LLC, 2021
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