onsemi-MJW21195G
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MJW21195 (PNP)
MJW21196 (NPN)
Silicon Power
T
r
ansistors
The MJW21195 and MJW21196 utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.
Features
16 AMPERES
COMPLEMENTARY
SILICON POWER TRANSISTORS
250 VOLTS, 200 WATTS
•
Total Harmonic Distortion Characterized
•
High DC Current Gain
−
h =
20 Min @ I
= 8 Adc
FE
C
•
Excellent Gain Linearity
•
High SOA: 2.25 A, 80
V
, 1
S
econd
•
Pb
−
Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
250
400
5.0
Unit
Vdc
Vdc
Vdc
Collector
−
Emitter Voltage
Collector
−
Base Voltage
Emitter
−
Base Voltage
V
V
CEO
CBO
1
2
V
TO
−
247
3
EBO
CEX
CASE 340L
Collector
−
Emitter Voltage
−
1.5 V
V
400
Vdc
Adc
Collector Current
−
Continuous
I
C
16
30
MARKING DIAGRAM
Base Current
−
Continuous
I
B
5.0
Adc
T
o
tal Power Dissipation @ T
= 25
°
C
P
D
200
1.43
W
W/
°
C
C
Derate Above 25
°
C
Operating and Storage Junction
T
e
mperature Range
T , T
−
ꢀꢀ
65 to +150
°
C
J
stg
MJW2119x
AYWWG
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction
−
to
−
Case
R
q
JC
0.7
°
C/W
1 BASE
3 EMITTER
2 COLLECTOR
Thermal Resistance, Junction
−
to
−
Ambient
R
q
JA
40
°
C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse
T
e
st: Pulse Width = 5
m
s, Duty Cycle
≤
10%.
x
A
Y
= 5
or 6
= Assembly Location
= Year
WW =
Work Week
G
= Pb
−
Free Package
ORDERING INFORMATION
Device
Package
Shipping
MJW21195
TO
−
247
30 Units/Rail
30 Units/Rail
MJW21195G
TO
−
247
(Pb
−
Free)
MJW21196
TO
−
247
30 Units/Rail
30 Units/Rail
MJW21196G
TO
−
247
(Pb
−
Free)
*For additional information on our Pb
−
Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting
T
e
chniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
March, 2010
−
Rev. 3
MJW21195/D
MJW21195 (PNP) MJW21196 (NPN)
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
C
Characteristic
Symbol
Min
Typical
Max
Unit
OFF CHARACTERISTICS
Collector
−
Emitter Sustaining Voltage (I
= 100 mAdc, I
= 0)
V
CEO(sus)
250
−
−
−
−
−
−
Vdc
C
B
Collector Cutoff Current (V
= 200 Vdc, I
= 0)
I
CEO
100
50
m
Adc
m
Adc
m
Adc
CE
B
Emitter Cutoff Current (V
= 5 Vdc, I
= 0)
I
EBO
−
CE
C
Collector Cutoff Current (V
= 250 Vdc, V
= 1.5 Vdc)
I
CEX
−
50
CE
BE(off)
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
I
Adc
S/b
(V =
50 Vdc, t = 1 s (non
−
repetitive)
4.0
2.25
−
−
−
−
CE
(V =
80 Vdc, t = 1 s (non
−
repetitive)
CE
ON CHARACTERISTICS
DC Current Gain
h
FE
(I =
8 Adc, V
= 5 Vdc)
20
8
−
−
80
−
C
CE
(I =
16 Adc, I
= 5 Adc)
C
B
Base
−
Emitter On Voltage (I
= 8 Adc, V
= 5 Vdc)
V
−
−
2.0
Vdc
Vdc
C
CE
BE(on)
Collector
−
Emitter Saturation Voltage
V
CE(sat)
(I =
8 Adc, I
= 0.8 Adc)
−
−
−
−
1.0
3
C
B
(I =
16 Adc, I
= 3.2 Adc)
C
B
DYNAMIC CHARACTERISTICS
T
o
tal Harmonic Distortion at the Output
T
%
HD
V
= 28.3 V, f = 1 kHz, P
= 100 W
h
FE
RMS
LOAD
RMS
unmatched
−
0.8
−
(Matched pair h
= 50 @ 5 A/5 V)
h
FE
FE
matched
−
0.08
−
−
Current Gain Bandwidth Product
f
4
−
MHz
pF
T
(I =
1 Adc, V
= 10 Vdc, f
= 1 MHz)
C
CE
test
Output Capacitance
(V =
10 Vdc, I
= 0, f
= 1
MHz)
test
C
−
−
500
ob
CB
E
2
MJW21195 (PNP) MJW21196 (NPN)
TYPICAL CHARACTERISTICS
PNP MJW21195
NPN MJW21196
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
V
CE
= 10 V
V
= 10 V
= 5 V
CE
V
CE
= 5 V
V
CE
T =
25
°
C
T =
25
°
C
test
J
J
f
= 1 MHz
f
= 1 MHz
test
2.5
2.0
1.5
1.0
0.1
1.0
I ,
COLLECTOR CURRENT (AMPS)
10
0.1
1.0
I ,
COLLECTOR CURRENT (AMPS)
10
C
C
Figure 1. Typical Current Gain
Bandwidth Product
Figure 2. Typical Current Gain
Bandwidth Product
PNP MJW21195
NPN MJW21196
1000
1000
T =
100
°
C
J
T =
100
°
C
J
100
100
25
°
C
25
°
C
-ꢀ25
°
C
-ꢀ25
°
C
V
CE
= 20 V
V
CE
= 20 V
10
10
0.1
1.0
10
100
0.1
1.0
10
100
I ,
COLLECTOR CURRENT (AMPS)
C
I ,
COLLECTOR CURRENT (AMPS)
C
Figure 3. DC Current Gain, V
CE
= 20 V
Figure 4. DC Current Gain, V
CE
= 20 V
PNP MJW21195
NPN MJW21196
1000
1000
T =
100
°
C
J
T =
100
°
C
J
100
100
25
°
C
25
°
C
-ꢀ25
°
C
-ꢀ25
°
C
V
CE
= 5 V
V
CE
= 5 V
10
10
0.1
1.0
10
100
0.1
1.0
10
100
I ,
COLLECTOR CURRENT (AMPS)
C
I ,
COLLECTOR CURRENT (AMPS)
C
Figure 5. DC Current Gain, V
CE
= 5 V
Figure 6. DC Current Gain, V
CE
= 5 V
3
MJW21195 (PNP) MJW21196 (NPN)
TYPICAL CHARACTERISTICS
PNP MJW21195
NPN MJW21196
30
30
25
20
15
10
2.0 A
1.5 A
1.0 A
2.0 A
1.5 A
25
20
15
10
1.0 A
I =
0.5 A
B
I =
0.5 A
B
5.0
0
5.0
0
T =
25
°
C
J
T =
25
°
C
J
0
5.0
10
15
20
25
0
5.0
V ,
COLLECTOR-EMITTER VOLTAGE (VOLTS)
CE
10
15
20
25
V
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
CE
Figure 7. Typical Output Characteristics
Figure 8. Typical Output Characteristics
PNP MJW21195
NPN MJW21196
3.0
2.5
2.0
1.5
1.0
1.4
1.2
1.0
0.8
0.6
0.4
T =
25
°
C
C B
T =
25
°
C
C B
J
I /I
= 10
J
I /I
= 10
V
BE(sat)
V
BE(sat)
V
CE(sat)
0.5
0
0.2
0
V
CE(sat)
0.1
1.0
10
100
0.1
1.0
10
100
I ,
COLLECTOR CURRENT (AMPS)
C
I ,
COLLECTOR CURRENT (AMPS)
C
Figure 9. Typical Saturation Voltages
PNP MJW21195
Figure 10. Typical Saturation Voltages
NPN MJW21196
10
10
T =
25
°
C
J
T =
25
°
C
J
1.0
1.0
V
V
= 20 V
= 5 V
V
V
= 20 V
= 5 V
CE
CE
CE
CE
0.1
0.1
0.1
1.0
10
100
0.1
1.0
10
100
I ,
COLLECTOR CURRENT (AMPS)
C
I ,
COLLECTOR CURRENT (AMPS)
C
Figure 11. Typical Base
−
Emitter Voltage
Figure 12. Typical Base
−
Emitter Voltage
4
MJW21195 (PNP) MJW21196 (NPN)
There are two limitations on the power handling ability of
a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate I
−
V
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
= 150
°
C; T
is
J(pk) C
variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power than
can be handled to values less than the limitations imposed by
second breakdown.
C
CE
TYPICAL CHARACTERISTICS
PNP MJW21195
NPN MJW21196
100
100
10 ms
10 ms
100 ms
100 ms
10
10
1 Sec
1 Sec
1
1
0.1
0.1
1
10
100
1000
1
10
100
1000
V ,
COLLECTOR
−
EMITTER VOLTAGE (VOLTS)
CE
V ,
COLLECTOR
−
EMITTER VOLTAGE (VOLTS)
CE
Figure 13. Active Region Safe Operating Area
Figure 14. Active Region Safe Operating Area
10000
10000
1000
100
C
ib
C
ib
1000
C
ob
T =
25
°
C
test
T =
25
°
C
J
test
J
C
ob
f
= 1 MHz
f
= 1 MHz
100
0.1
1.0
10
100
0.1
1.0
10
100
V ,
REVERSE VOLTAGE (VOLTS)
R
V ,
REVERSE VOLTAGE (VOLTS)
R
Figure 15. MJW21195 Typical Capacitance
Figure 16. MJW21196 Typical Capacitance
5
MJW21195 (PNP) MJW21196 (NPN)
1.2
1.1
1.0
0.9
0.8
0.7
0.6
10
100
1000
10000
100000
FREQUENCY (Hz)
Figure 17. Typical Total Harmonic Distortion
+50 V
DUT
AUDIO PRECISION
MODEL ONE PLUS
TOTAL HARMONIC
DISTORTION
50
W
SOURCE
AMPLIFIER
ANALYZER
0.5
W
0.5
W
8.0
W
DUT
-50 V
Figure 18. Total Harmonic Distortion Test Circuit
6
MJW21195 (PNP) MJW21196 (NPN)
PACKAGE DIMENSIONS
TO
−
247
CASE 340L
−
02
ISSUE E
NOTES:
−
T
−
1. DIMENSIONING
AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING
DIMENSION: MILLIMETER.
C
−
B
−
E
MILLIMETERS
INCHES
DIM MIN
MAX
21.08
16.26
5.30
MIN
MAX
8.30
U
L
A
B
C
D
E
F
20.32
15.75
4.70
1.00
1.90
1.65
0.800
0.620
0.185
0.040
0.075
0.065
N
0.640
0.209
0.055
0.102
0.084
4
A
K
1.40
2.60
−
Q
−
M
M
0.63 (0.025)
T B
2.13
1
2
3
G
H
J
5.45 BSC
0.215 BSC
1.50
0.40
19.81
5.40
4.32
—
2.49
0.80
20.83
6.20
5.49
4.50
3.65
0.059
0.016
0.780
0.212
0.170
—
0.098
0.031
0.820
0.244
0.216
0.177
0.144
P
K
L
−
Y
−
N
P
Q
U
W
3.55
0.140
6.15 BSC
0.242 BSC
2.87
3.12
0.113
0.123
W
J
F
2 PL
H
G
D
3 PL
M
S
Y Q
0.25 (0.010)
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC).
SCILLC reserves the right to make changes without further notice
to any products herein.
SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time.
All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
SCILLC does not convey any license under its patent rights
nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.
Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.
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Opportunity/Affirmative Action Employer.
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A
T
ION ORDERING INFORMATION
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T
:
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−
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o
ll Free
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For additional information, please contact your local
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MJW21195/D
