onsemi-MMBF170
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DATA SHEET
BS170
Field Effect Transistor –
N-Channel, Enhancement
Mode
D
G
BS170, MMBF170
S
TO
−
92 3 4.825×4.76
CASE 135AN
General Description
These N
−
Channel enhancement mode field effect transistors are
produced using
onsemi
’s proprietary, high cell density, DMOS
technology. These products have been designed to minimize on
−
state
resistance while provide rugged, reliable, and fast switching
performance. They can be used in most applications requiring up to
500 mA DC. These products are particularly suited for low voltage,
low current applications such as small servo motor control, power
MOSFET gate drivers, and other switching applications.
D
G
S
TO
−
92 3 4.83×4.76 LEADFORMED
CASE 135AR
MMBF170
Features
•
High Density Cell Design for Low R
DS(ON)
D
•
V
o
ltage Controlled Small Signal Switch
•
Rugged and Reliable
G
S
SOT
−
23
•
High Saturation Current Capability
•
These are Pb
−
Free Devices
CASE 318
−
08
Drain
Gate
Source
MARKING DIAGRAM
BS170
ALYW
6ZM
1
BS170, 6Z = Device Code
A
L
YW
M
= Assembly Plant Code
= Wafer Lot Number
= Assembly Start Week
= Date Code
ORDERING INFORMATION
this data sheet.
©
Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
April, 2022
−
Rev. 7
MMBF170/D
BS170, MMBF170
ABSOLUTE MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
A
Symbol
Parameter
BS170
MMBF170
Unit
V
V
Drain
−
Source Voltage
60
60
20
DSS
DGR
V
Drain
−
Gate Voltage (R
≤
1 M
W
)
V
GS
V
GSS
Gate
−
Source Voltage
V
I
D
Drain Current
−
Continuous
−
Pulsed
500
500
800
mA
1200
T , T
Operating and Storage
T
e
mperature Range
−
55 to 150
°
C
°
C
J
STG
T
L
Maximum Lead
T
e
mperature for Soldering Purposes, 1/16” from Case
for 10 Seconds
300
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Symbol
Parameter
BS170
MMBF170
Unit
P
D
Maximum Power Dissipation
Derate above 25
°
C
830
6.6
300
2.4
mW
mW/
°
C
R
Thermal Resistance, Junction to Ambient
150
417
°
C/W
q
JA
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Symbol
Parameter
Test Condition
Type
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain
−
Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate
−
Body Leakage, Forward
V
GS
V
DS
V
GS
= 0
V
, I
= 100
m
A
All
All
All
60
−
−
−
−
−
V
DSS
D
I
= 25
V
, V
= 0 V
0.5
10
m
A
nA
DSS
GS
I
= 15
V
, V
= 0 V
−
GSSF
DS
V
Gate Threshold Voltage
V
DS
V
GS
V
DS
V
DS
= V
, I
= 1 mA
All
All
0.8
−
2.1
1.2
3
5
−
−
V
W
GS(th)
GS
D
R
Static Drain
−
Source On
−
Resistance
Forward Transconductance
= 10 V, I
= 200 mA
D
DS(ON)
g
FS
= 10 V, I
= 200 mA
BS170
MMBF170
−
320
320
mS
D
≥
2 V
, I
= 200 mA
−
DS(on)
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 10
V
, V
= 0 V,
All
All
All
−
−
−
24
17
7
40
30
10
pF
pF
pF
iss
DS
GS
f = 1.0 MHz
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
rss
t
t
Turn
−
On Time
Turn
−
Off Time
V
V
= 25 V, I
= 200 mA,
BS170
MMBF170
BS170
−
−
−
−
−
−
−
−
10
10
10
10
ns
ns
on
DD
GS
D
= 10
V
, R
= 25
W
GEN
V
DD
V
GS
= 25 V, I
= 500 mA,
D
= 10
V
, R
= 50
W
GEN
V
DD
V
GS
= 25 V, I
= 200 mA,
D
off
= 10
V
, R
= 25
W
GEN
V
DD
V
GS
= 25 V, I
= 500 mA,
MMBF170
D
GEN
= 10
V
, R
= 50
W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse
T
e
st: Pulse Width
≤
300
m
s, Duty Cycle
≤
2.0%.
2
BS170, MMBF170
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. On
−
Region Characteristics
Figure 2. On
−
Resistance Variation with Gate
Voltage and Drain Current
Figure 3. On
−
Resistance Variation with
Figure 4. On
−
Resistance Variation with
Temperature
Drain Current and Temperature
Figure 5. Transfer Characteristics
Figure 6. Gate Threshold Variation with
Temperature
3
BS170, MMBF170
TYPICAL ELECTRICAL CHARACTERISTICS
(continued)
Figure 7. Breakdown Voltage Variation with
Figure 8. Body Diode Forward Voltage
Variation with Current and Temperature
Temperature
Figure 9. Capacitance Characteristics
Figure 10. Gate Charge Characteristics
Figure 11. Switching Test Circuit
Figure 12. Switching Waveforms
4
BS170, MMBF170
TYPICAL ELECTRICAL CHARACTERISTICS
(continued)
Figure 13. BS170 Maximum Safe Operating
Area
Figure 14. MMBF170 Maximum Safe Operating
Area
Figure 15. TO
−
92, BS170 Transient Thermal Response Curve
Figure 16. SOT
−
23, MMBF170 Transient Thermal Response Curve
5
BS170, MMBF170
ORDERING INFORMATION
Part Number
†
Package
Lead Frame
Pin Array
Shipping
BS170
TO
−
92
Straight
D G S
10000 Units / Bulk
2000 /
T
a
pe & Reel
2000 /
T
a
pe & Reel
2000 / Ammo
(Pb
−
Free)
BS170
−
D26Z
BS170
−
D27Z
BS170
−
D74Z
BS170
−
D75Z
MMBF170
TO
−
92
(Pb
−
Free)
Forming
Forming
Forming
Forming
D G S
D G S
D G S
D G S
TO
−
92
(Pb
−
Free)
TO
−
92
(Pb
−
Free)
TO
−
92
(Pb
−
Free)
2000 / Ammo
SOT
−
23
(Pb
−
Free)
3000 /
T
a
pe & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO
−
92 3 4.825×4.76
CASE 135AN
ISSUE O
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13880G
TO
−
92 3 4.825X4.76
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO
−
92 3 4.83×4.76 LEADFORMED
CASE 135AR
ISSUE O
DATE 30 SEP 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13879G
TO
−
92 3 4.83X4.76 LEADFORMED
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT
−
23 (TO
−
236)
CASE 318
−
08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
NOTES:
D
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
0.25
3
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
T
H
E
E
1
2
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
°
NOM
1.00
0.06
0.44
0.14
2.90
1.30
1.90
0.43
0.54
2.40
−−−
MAX
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
°
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
°
L
1.11
0.10
0.50
0.20
3.04
1.40
2.04
0.55
0.69
2.64
10
°
3X
b
L1
VIEW C
e
TOP VIEW
L1
A
H
E
T
c
A1
SEE VIEW C
SIDE VIEW
GENERIC
MARKING DIAGRAM*
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT
XXXM
G
G
1
3X
0.90
XXX = Specific Device Code
2.90
M
= Date Code
G
= Pb
−
Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present.
3X
0.95
0.80
PITCH
DIMENSIONS: MILLIMETERS
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
STYLE 7:
PIN 1.
EMITTER
2. BASE
STYLE 8:
PIN 1.
BASE
2. EMITTER
3. COLLECTOR
PIN 1.
ANODE
2. NO
CONNECTION
3. CATHODE
3. COLLECTOR
STYLE 9:
PIN 1.
ANODE
2. ANODE
STYLE 10:
STYLE 11:
STYLE 12:
STYLE 13:
PIN 1.
SOURCE
2. DRAIN
STYLE 14:
PIN 1.
CATHODE
2. GATE
PIN 1.
DRAIN
2. SOURCE
3. GATE
PIN 1.
ANODE
PIN 1.
CATHODE
2. CATHODE
3. ANODE
2. CATHODE
3. CATHODE
−
ANODE
3. CATHODE
3. GATE
3. ANODE
STYLE 15:
STYLE 16:
STYLE 17:
PIN 1.
NO CONNECTION
2. ANODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1.
GATE
2. CATHODE
3. ANODE
PIN 1.
ANODE
2. CATHODE
3. CATHODE
PIN 1.
NO CONNECTION
PIN 1.
CATHODE
PIN 1.
CATHODE
2. ANODE
3. GATE
2. CATHODE
3. ANODE
2. ANODE
3. CATHODE
−
ANODE
3. CATHODE
STYLE 21:
STYLE 22:
STYLE 23:
PIN 1.
ANODE
2. ANODE
STYLE 24:
STYLE 25:
STYLE 26:
PIN 1.
GATE
2. SOURCE
3. DRAIN
PIN 1.
RETURN
2. OUTPUT
3. INPUT
PIN 1.
GATE
2. DRAIN
PIN 1.
ANODE
2. CATHODE
3. GATE
PIN 1.
CATHODE
2. ANODE
3. SOURCE
3. NO
CONNECTION
3. CATHODE
STYLE 27:
STYLE 28:
PIN 1.
CATHODE
2. CATHODE
3. CATHODE
PIN 1.
ANODE
2. ANODE
3. ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT
−
23 (TO
−
236)
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
onsemi
,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates
and/or subsidiaries in the United States and/or other countries.
onsemi
owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of
onsemi
’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
.
onsemi
reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as
−
is” and
onsemi
makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does
onsemi
assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using
onsemi
products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by
onsemi
. “Typical” parameters which may be provided in
onsemi
data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
onsemi
does not convey any license
under any of its intellectual property rights nor the rights of others.
onsemi
products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use
onsemi
products for any such unintended or unauthorized application, Buyer shall indemnify and hold
onsemi
and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that
onsemi
was negligent regarding the design or manufacture of the part.
onsemi
is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800
−
282
−
9855
T
o
ll Free USA/Canada
Phone: 011 421 33 790 2910
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For additional information, please contact your local Sales Representative
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