onsemi-MMBFJ110
| Part # | onsemi-MMBFJ110 |
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N-Channel JFET
MMBFJ110
Features
•
This Device is Designed for Digital Switching Applications where
V
e
ry Low On Resistance is Mandatory
•
Sourced from Process 58
•
This is a Pb
−
Free Device
3
A
Symbol
Parameter
Drain
−
Gate Voltage
Value
25
Unit
V
1
2
V
V
DG
GS
GF
SOT
−
23/SUPERSOT
t
−
23,
Gate
−
Source Voltage
Forward Gate Current
Junction
T
e
mperature
Storage
T
e
mperature Range
−
25
V
3 LEAD, 1.4×2.9
CASE 527AG
I
10
mA
°
C
°
C
1. Drain, 2. Source, 3. Gate
T
J
150
T , T
−
55 to 150
J
STG
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. These
ratings are based on a maximum junction temperature of 150
°
C.
2. These
are steady
−
state limits. ON Semiconductor should be consulted on
applications involving pulsed or low
−
duty
−
cycle operations.
&Y
110 &G
110 =
Specific Device Code
&Y =
Y
ear Coding
&G =
Weekly Date Code
THERMAL CHARACTERISTICS
(T =
25
°
C unless otherwise specified)
A
Symbol
Parameter
T
o
tal Device Dissipation
Max
460
3.68
270
Unit
mW
P
D
ORDERING INFORMATION
this data sheet.
Derate Above 25
°
C
mW/
°
C
°
C/W
R
Thermal Resistance, Junction
−
to
−
Ambient
q
JA
3. Device
mounted on FR
−
4 PCB 36 mm x 18 mm x 1.5 mm; mounting pad for
2
the collector lead minimum 6 cm
.
©
Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
December, 2020
−
Rev. 2
MMBFJ110/D
MMBFJ110
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
J
Symbol
Parameter
Test Condition
Min
Max
Unit
OFF CHARACTERISTICS
V
Gate
−
Source Breakdown Voltage
I
=
−
10
m
A, V
= 0
−
25
−
−
V
(BR)GSS
G
DS
I
Gate Reverse Current
V
V
V
=
−
15
V
, V
= 0
−
3.0
−
200
−
4.0
nA
GSS
GS
GS
DS
DS
=
−
15
V
, V
=
0
, T
= 100
°
C
−
DS
A
V
(off)
Gate
−
Source Cut
−
Off Voltage
= 15 V, I
= 10 nA
−
0.5
V
GS
D
ON CHARACTERISTICS
I
Drain
−
Source On Resistance
V
V
= 15
V
, V
= 0
10
−
mA
DSS
DS
GS
r
(on)
≤
0.1
V
, V
= 0
−
18
W
DS
DS
GS
SMALL SIGNAL CHARACTERISTICS
C
C
(on)
(on)
Drain
−
Gate & Source
−
Gate On Capacitance
V
V
= 0, V
= 0, f = 1.0 MHz
−
−
85
15
pF
pF
dg
sg
DS
GS
C
dg
C
sg
(off)
(off)
Drain
−
Gate & Source
−
Gate Off Capacitance
= 0, V
=
−
10
V
, f =
1
.0 MHz
GS
DS
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse
test: pulse width
≤
300
m
s, duty cycle
≤
2%.
TYPICAL PERFORMANCE CHARACTERISTICS
250
T
A
= 25
°
C
TYP VGS(off) =
−
2.9 V
200
150
100
50
V
=
−
0.1 V
−
0.5 V
GS
−
1.0 V
−
1.5 V
−
2.0 V
3
0
0
1
2
4
5
6
7
8
9
10
11
12
13
14
15
V
DS
, DRAIN SOURCE VOLTAGE (V)
Figure 1. Common Drain
−
Source
2
MMBFJ110
TYPICAL PERFORMANCE CHARACTERISTICS
(continued)
1000
100
10
1
V
V
V
= 0 PULSED
= 100 mA
V
I
= 100 mV
= 100 mA
GS
GS
DS
D
@ V
= 15
V
, I
=
1
0 nA
GS(off)
DS
D
100
10
−
1
−
1
−
4
100
25
−
4
V
, GATE CUTOFF VOLTAGE (V)
V
, GATE CUTOFF VOLTAGE (V)
GS(off)
GS(off)
Figure 2. Drain ON Resistance
Figure 3. Drain Current vs.
Gate
−
Source Cut
−
Off Voltage
100
50
10
8
V
= 10 V
T =
25
°
C
A
DG
BW = 6.0 Hz @ f = 10 Hz, 100 Hz
V
V
= 1.5 V
=
−
12 V
DD
= 0.21 @ f
≥
1.0 kHz
GS
6
I
D
= 30 mA
10
5
4
I
D
= 10 mA
I
D
= 1.0 mA
I
= 10 mA
D
2
1
0
0.01
0.03
0.1
0.5
1
2
10
0
−
2
−
4
−
6
−
8
−
10
f, FREQUENCY (Hz)
V
GS(off)
, GATE CUTOFF VOLTAGE (V)
Figure 4. Noise Voltage vs. Frequency
Figure 5. Switching Turn
−
On Time vs.
Gate
−
Source Cut
−
Off Voltage
100
50
40
30
20
10
0
VGS = 0 V
T
A
= 125
°
C
25
°
C
VGS(off) =
−
2.9 V
10
V
=
−
3.5 V
GS(off)
−
55
°
C
VGS(off) =
−
4.0 V
T
= 25
°
C
= 1.5 V
=
−
12 V
A
V
V
DD
GS
1
1
10
100
0
5
10
15
20
I ,
DRAIN CURRENT (mA)
D
I ,
DRAIN CURRENT (mA)
D
Figure 6. Switching Turn
−
On Time vs. Drain Current
Figure 7. On Resistance vs. Drain Current
3
MMBFJ110
TYPICAL PERFORMANCE CHARACTERISTICS
(continued)
1000
100
10
100
T
= 25
°
C
T
= 25
°
C
A
A
f = 1.0 kHz
V
V
f = 1.0 kHz
VGS(off) =
−
4.0 V
= 10 V
GS
GS(off)
=
−
3.0 V @ V
= 15
V
, I
=
1
0 nA
DS
D
10
1
0,1
1
0,1
1
10
0,1
1
10
I ,
DRAIN CURRENT (mA)
D
I ,
DRAIN CURRENT (mA)
D
Figure 8. Output Conductance vs. Drain Current
Figure 9. Output Conductance vs. Drain Current
700
600
500
400
300
200
100
0
0
20
40
60
80
100
120
140
160
T,
A
MBIENT TEMPERATURE (
°
C)
Figure 10. Power Dissipation vs. Ambient Temperature
ORDERING INFORMATION
Part Number
†
Top Mark
Package
Shipping
MMBFJ108
110
SSOT 3L
(Pb
−
Free)
3000 /
T
a
pe & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
SUPERSOT is trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT
−
23/SUPERSOT
t
−
23, 3 LEAD, 1.4×2.9
CASE 527AG
ISSUE A
DATE 09 DEC 2019
GENERIC
MARKING DIAGRAM*
*This information is generic. Please refer to
XXX =
Specific Device Code
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”, may
or may not be present. Some products may
not follow the Generic Marking.
M
= Month Code
XXXM
G
G
= Pb
−
Free Package
G
(Note: Microdot may be in either location)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON34319E
SOT
−
23/SUPERSOT
−
23, 3 LEAD, 1.4X2.9
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
onsemi
,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates
and/or subsidiaries in the United States and/or other countries.
onsemi
owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of
onsemi
’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
.
onsemi
reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as
−
is” and
onsemi
makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does
onsemi
assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using
onsemi
products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by
onsemi
. “Typical” parameters which may be provided in
onsemi
data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
onsemi
does not convey any license
under any of its intellectual property rights nor the rights of others.
onsemi
products are not designed, intended, or authorized for use as a critical component in life support systems
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associated with such unintended or unauthorized use, even if such claim alleges that
onsemi
was negligent regarding the design or manufacture of the part.
onsemi
is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800
−
282
−
9855
T
o
ll Free USA/Canada
Phone: 011 421 33 790 2910
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