onsemi-MMBFJ177LT1G
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MMBFJ177LT1G,
SMMBFJ177LT1G
JFET Chopper
P−Channel − Depletion
Features
•
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
2 SOURCE
3
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
GATE
Compliant
1 DRAIN
MAXIMUM RATINGS
3
Rating
Drain−Gate Voltage
Gate−Source Voltage
Symbol
Value
−25
25
Unit
Vdc
Vdc
SOT−23 (TO−236)
CASE 318−08
STYLE 10
V
DG
1
V
GS
2
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
MARKING DIAGRAM
THERMAL CHARACTERISTICS
6Y M
G
T
o
tal Device Dissipation FR
−
5
B
oard
P
D
225
1.8
mW
G
T =
25
°
C
mW/
°
C
A
1
Derate above 25
°
C
6Y =
Specific Device Code
Thermal Resistance,
Junction−to−Ambient
R
556
°
C/W
°
C
q
JA
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
Junction and Storage
T
e
mperature
T , T
J
−
5
5 to +150
stg
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1. FR
−
5
=
1
.0
ꢀ
0.75
ꢀ
0.062 in.
ORDERING INFORMATION
†
Device
Package
Shipping
MMBFJ177LT1G
SOT−23
(Pb−Free)
3000 /
T
a
pe &
Reel
SMMBFJ177
L
T
1G
SOT−23
(Pb−Free)
3000 /
T
a
pe &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 1994
1
Publication Order Number:
October, 2016 − Rev. 8
MMBFJ177
L
T
1/D
MMBFJ177LT1G, SMMBFJ177LT1G
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Gate−Source Breakdown Voltage (V
= 0, I
= 1.0
m
Adc)
V
(BR)GSS
30
−
−
Vdc
nAdc
Vdc
DS
D
Gate Reverse Current (V
= 0 Vdc, V
= 20 Vdc)
I
GSS
1.0
2.5
DS
GS
Gate Source Cutoff Voltage (V
= −15 Vdc, I
= −10 nAdc)
V
GS(off)
0.8
DS
D
ON CHARACTERISTICS
I
DSS
−1.5
−
−20
−1.0
300
11
mAdc
nAdc
W
GS
DS
Drain Cutoff Current (V
= −15 Vdc, V
= 10 Vdc)
I
D(off)
DS
GS
Drain Source On Resistance (I
= −500
m
Adc)
r
−
D
DS(on)
Input Capacitance
C
−
pF
iss
rss
V
DS
= 0, V
= 10 Vdc
GS
f = 1.0 MHz
Reverse Transfer Capacitance
C
−
5.5
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse
T
e
st: Pulse Width < 300
m
s, Duty Cycle
≤
2%.
TYPICAL CHARACTERISTICS
−8
−7
14
12
10
8
VGS = 0 V
V
= 0 V
GS
VGS = 0.1 V
VGS = 0.3 V
f = 1 MHz
−6
−5
−4
−3
−2
VGS = 0.5 V
6
VGS = 0.7 V
VGS = 0.9 V
4
2
0
−1
0
0
−2
−4
−6
−8
−10
−12
0
−5
−10
−15
−20
−25
V
DS
, DRAIN−SOURCE VOLTAGE (V)
V
DS
, DRAIN−SOURCE VOLTAGE (V)
Figure 1. Drain Current vs. Drain−Source
Voltage
Figure 2. Reverse Transfer Capacitance
32
28
24
20
16
12
V
= 0 V
GS
f = 1 MHz
8
4
0
0
−5
−10
−15
−20
−25
V
DS
, DRAIN−SOURCE VOLTAGE (V)
Figure 3. Input Capacitance
2
MMBFJ177LT1G, SMMBFJ177LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
NOTES:
D
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
0.25
3
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
T
H
E
E
1
2
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
°
NOM
1.00
0.06
0.44
0.14
2.90
1.30
1.90
0.43
0.54
2.40
−−−
MAX
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
°
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
°
L
1.11
0.10
0.50
0.20
3.04
1.40
2.04
0.55
0.69
2.64
10
°
3X
b
L1
VIEW C
e
TOP VIEW
A
H
E
T
c
A1
SEE VIEW C
STYLE 10:
SIDE VIEW
PIN 1.
DRAIN
2. SOURCE
3. GATE
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
3X
2.90
0.90
3X
0.95
0.80
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage
may be accessed at
www.onsemi.com/site/pdf/Patent−Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
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arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer
is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of
any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and
do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
N. American Technical Support
: 800−282−9855
T
o
ll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
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Phone: 81−3−5817−1050
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o
ll Free USA/Canada
Fax
: 303−675−2176 or 800−344−3867
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o
ll Free USA/Canada
Email
: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
◊
MMBFJ177LT1/D
