onsemi-MMBFJ201

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January 2015  
MMBFJ201 / MMBFJ202  
N-Channel General-Purpose Amplifier  
Description  
G
This device is designed primarily for low level audio  
and general-purpose applications with high imped-  
ance signal sources. Sourced from process 52.  
SOT-23  
S
Note: Source & Drain  
D
are interchangeable  
Ordering Information  
Part Number  
MMBFJ201  
Top Mark  
62P  
Package  
SOT-23 3L  
SOT-23 3L  
Packing Method  
T
a
pe and Reel  
MMBFJ202  
62Q  
T
a
pe and Reel  
Absolute Maximum Ratings

(1), (2)  

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-  
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-  
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The  
absolute maximum ratings are stress ratings only. Values are at T

A

= 25°C unless otherwise noted.  
Symbol  
V

DG  

Parameter  
Value  
40  
Unit  
V
Drain-Gate Voltage  
Gate-Source Voltage  
Forward Gate Current  
V

GS  

-40  
V
I

GF  

50  
mA  
°
C  
T

J

, T

STG  

Operating and Storage Junction
T
e
mperature Range  
-55 to 150  
Notes:  
1. These ratings are based on a maximum junction temperature of 150
°
C.  
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or  
low-duty-cycle operations.  
© 1997 Fairchild Semiconductor Corporation  
MMBFJ201 / MMBFJ202 Rev. 1.4  

Thermal Characteristics

(3)  

Values are at T

A

= 25°C unless otherwise noted.  
Symbol  
P

D  

Parameter  
Max.  
350  
2.8  
Unit  
mW  
T
o
tal Device Dissipation  
Derate Above 25
°
C  
mW/
°
C  
°
C/W  
R

θ
JA  

Thermal Resistance, Junction-to-Ambient  
357  
Note:  
3. Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead minimum 6cm

2

.  
Electrical Characteristics  
Values are at T

A

= 25°C unless otherwise noted.  
Symbol  
Parameter  
Conditions  
Min. Typ. Max.
 
Unit  
Off Characteristics  
V

(BR)GSS

Gate-Source Breakdown Voltage
 
I

G

= -1.0
μ
A, V

DS

= 0  
-40  
V
I

GSS  

Gate Reverse Current  
V

GS

= -20
V
,
V

DS

= 0  
-100  
-1.5  
-4.0  
pA  
MMBFJ201 -0.3  
MMBFJ202 -0.8  
V

GS(off)

Gate-Source Cut-Off Voltage  
V

DS

= 20 V, I

D

= 10 nA  
V
On Characteristics  
MMBFJ201 0.2  
MMBFJ202 0.9  
1.0  
4.5  
Zero-Gate Voltage Drain  
I

DSS  

V

DS

= 20 V, I

GS

= 0  
mA  
Current

(4)  

Small Signal Characteristics  
MMBFJ201 500  
MMBFJ202 1000  
y

FS  

Forward Transfer Admittance  
V

DS

= 20 V, f = 1.0 kHz  
μ
mhos  
Note:  
4. Pulse test: pulse width
≤
300
μ
s, duty cycle
≤
2.0%  
© 1997 Fairchild Semiconductor Corporation  
MMBFJ201 / MMBFJ202 Rev. 1.4  
2

Typical Performance Characteristics  
Figure 1. Parameter Interactions  
Figure 3. Transfer Characteristics  
Figure 5. Leakage Current vs. Voltage  
Figure 2. Common Drain-Source  
Figure 4. Transfer Characteristics  
Figure 6. Noise Voltage vs. Frequency  
© 1997 Fairchild Semiconductor Corporation  
MMBFJ201 / MMBFJ202 Rev. 1.4  
3

Typical Performance Characteristics
(Continued)  
Figure 8. Output Conductance vs. Drain Current  
Figure 7. Transconductance vs. Drain Current  
Figure 9. Capacitance vs. Voltage  
© 1997 Fairchild Semiconductor Corporation  
MMBFJ201 / MMBFJ202 Rev. 1.4  
4

Common Source Characteristics  
Figure 10. Input Admittance  
Figure 11. Forward Transadmittance  
Figure 13. Reverse Transadmittance  
Figure 12. Output Admittance  
© 1997 Fairchild Semiconductor Corporation  
MMBFJ201 / MMBFJ202 Rev. 1.4  
5

Common Gate Characteristics  
Figure 14. Input Admittance  
Figure 15. Forward Transadmittance  
Figure 17. Reverse Transadmittance  
Figure 16. Output Admittance  
© 1997 Fairchild Semiconductor Corporation  
MMBFJ201 / MMBFJ202 Rev. 1.4  
6

Physical Dimensions  
0.95  
2.92 0.20  
3
1.40  
+0.20  
-0.15  
1.30  
2.20  
1.00  
1
2
0.60  
0.37  
(0.29)  
0.95  
1.90  
0.20  
A B  
1.90  
LAND PATTERN  
RECOMMENDATION  
SEE DETAIL A  
1.20 MAX  
(0.93)  
0.10  
0.00  
0.10  
C
C
2.40 0.30  
NOTES: UNLESS OTHERWISE SPECIFIED  
GAGE PLANE  
A) REFERENCE
 
JEDEC REGISTRATION  
TO-236, VARIATION AB, ISSUE H.  
B) ALL
 
DIMENSIONS ARE IN MILLIMETERS.  
C) DIMENSIONS
 
ARE INCLUSIVE OF BURRS,  
MOLD FLASH AND TIE BAR EXTRUSIONS.  
D) DIMENSIONING
 
AND TOLERANCING PER  
ASME Y14.5M – 1994.  
0.23  
0.08  
0.25  
0.20 MIN  
E) DRAWING
 
FILE NAME: MA03DREV10  
SEATING  
PLANE  
(0.55)  
SCALE: 2X  
Figure 18. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE  
© 1997 Fairchild Semiconductor Corporation  
MMBFJ201 / MMBFJ202 Rev. 1.4  
7

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No Identification Needed  
Obsolete  
First Production  
Full Production  
Not In Production  
Rev. I73  
© Fairchild Semiconductor Corporation  

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