onsemi-MMBFJ309LT1G

Part #onsemi-MMBFJ309LT1G
Download 
onsemi-MMBFJ309LT1G
MMBFJ309L, MMBFJ310L,  
SMMBFJ309L, SMMBFJ310L  
JFET – VHF/UHF Amplifier  
Transistor  
N
−
Channel  
Features  
2 SOURCE  
•
Drain and Source are Interchangeable  
•
S Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements; AEC
−
Q101 Qualified and  
PPAP Capable  
3
GATE  
•
These Devices are Pb
−
Free, Halogen Free/BFR Free and are RoHS  
1 DRAIN  
Compliant  
MAXIMUM RATINGS  
3
Rating  
Drain
−
Source Voltage  
Symbol  
Value  
25  
Unit  
Vdc  
SOT
−
23 (TO
−
236)  
CASE 318  
V
DS  
1
STYLE 10  
2
Gate
−
Source Voltage  
V
GS  
25  
Vdc  
Gate Current  
I
G
10  
mAdc  
THERMAL CHARACTERISTICS  
MARKING DIAGRAM  
Characteristic  
Symbol  
Max  
Unit  
T
o
tal Device Dissipation FR
−
5 Board,  
P
D

(Note 1) T

= 25
°
C  
225  
1.8  
mW  
6x M
G  
A
Derate above 25
°
C  
mW/
°
C  
G
1
Thermal Resistance, Junction
−
to
−
Ambient  
Junction and Storage
T
e
mperature  
R
556  
°
C/W  
°
C  
q
JA  
T , T  
−
55 to +150  
J
stg  
6x =
 
Device Code  
x = U for MMBFJ309L, SMMBFJ309L  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. FR
−
5 = 1.0 x 0.75 x 0.062 in.  
x = T for MMBFJ310L, SMMBFJ310L  
= Date Code*  
= Pb
−
Free Package  
M
G
(Note: Microdot may be in either location)  
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
MMBFJ309
L
T
1G,  
SMMBFJ309
L
T
1G (Pb
−
Free)  
SOT
−
23  
3,000 /
T
a
pe &  
Reel  
MMBFJ310
L
T
1G, SOT
−
23  
SMMBFJ310
L
T
1G (Pb
−
Free)  
3,000 /
T
a
pe &  
Reel  
SMMBFJ310
L
T
3G SOT
−
23  
(Pb
−
Free)  
10,000 /
T
a
pe &  
Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our
T
a
pe and Reel Packaging Specifications  
Brochure, BRD8011/D.  
©
Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
October, 2013
−
Rev. 7  
MMBFJ309
L
T
1/D  
 

MMBFJ309L, MMBFJ310L, SMMBFJ309L, SMMBFJ310L  
ELECTRICAL CHARACTERISTICS
(T =
 
25
°
C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Gate
−
Source Breakdown Voltage  
(I =
 
−
1.0
m
Adc, V
 
= 0)  
V
−
25  
−
−
Vdc  
(BR)GSS  
G
DS  
Gate Reverse Current (V
 
=
−
15 Vdc)  
I
−
−
−
−
−
1.0  
−
1.0  
nAdc  
m
Adc  
GS  
GSS  
Gate Reverse Current
(V =
 
−
15 Vdc, T
 
= 125
°
C)  
GS  
A
Gate Source Cutoff Voltage  
MMBFJ309  
MMBFJ310, SMMBFJ310  
V
GS(off)  
−
1.0  
−
2.0  
−
−
−
4.0  
−
6.5  
Vdc  
(V =
 
10 Vdc, I
 
= 1.0 nAdc)  
DS  
D
ON CHARACTERISTICS  
Zero
−
Gate
−
Voltage Drain Current  
MMBFJ309  
MMBFJ310, SMMBFJ310  
I
12  
24  
−
−
30  
60  
mAdc  
Vdc  
DSS  
(V =
 
10 Vdc, V
 
= 0)  
DS  
GS  
Gate
−
Source Forward Voltage  
(I =
 
1.0 mAdc, V
 
= 0)  
V
−
−
1.0  
GS(f)  
G
DS  
SMALL
−
SIGNAL CHARACTERISTICS  
Forward Transfer Admittance  
|Y |  
8.0  
−
−
−
18  
250  
5.0  
2.5  
−
mmhos  
m
mhos  
pF  
fs  
(V =
 
10 Vdc, I
 
= 10 mAdc, f = 1.0 kHz)  
DS  
D
Output Admittance  
|y  
|
os  
(V =
 
10 Vdc, I
 
= 10 mAdc, f = 1.0 kHz)  
DS  
D
Input Capacitance  
C
−
−
iss  
rss  
(V =
 
−
10 Vdc, V
 
= 0 Vdc, f = 1.0 MHz)  
GS  
DS  
Reverse Transfer Capacitance  
(V =
 
−
10 Vdc, V
 
= 0 Vdc, f = 1.0 MHz)  
C
−
−
pF  
GS  
DS  
Equivalent Short
−
Circuit Input Noise Voltage  
(V =
 
10 Vdc, I
 
= 10 mAdc, f = 100 Hz)  
e
n
−
10  
Ǹ
nV
ń
Hz  
DS  
D
2

MMBFJ309L, MMBFJ310L, SMMBFJ309L, SMMBFJ310L  
70  
60  
50  
40  
30  
20  
10  
0
70  
60  
V
= 10 V  
I
T =
 
-ꢀ55
°
C  
A
DS  
50  
40  
30  
20  
10  
+ꢀ25
°
C  
DSS  
+ꢀ25
°
C  
+150
°
C  
+150
°
C  
+ꢀ25
°
C  
-ꢀ55
°
C  
-1.0  
0
-5.0  
-4.0  
-3.0  
-2.0  
I
D
– V
 
, GATE-SOURCE VOLTAGE (VOLTS)  
GS  
I
– V
 
, GATE-SOURCE CUTOFF VOLTAGE (VOLTS)  
GS  
DSS  
Figure 1. Drain Current and Transfer  
Characteristics versus Gate
−
Source Voltage  
100 k  
10 k  
10  
120  
96  
72  
48  
24  
0
1.0 k  
100  
R
DS  
Y
fs  
Y
fs  
7.0  
C
gs  
4.0  
V
V
= -ꢀ2.3 V =  
= -ꢀ5.7 V =  
10  
1.0 k  
100  
GS(off)  
Y
os  
GS(off)  
C
gd  
1.0  
0
1.0  
0.01  
0.1 0.2 0.3 0.5
 
1.0 2.0
 
3.0 5.0
 
10 20
 
30 50
 
100  
10 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0  
0
I ,
 
DRAIN CURRENT (mA)  
D
V
GS  
, GATE SOURCE VOLTAGE (VOLTS)  
Figure 2. Common
−
Source Output  
Admittance and Forward Transconductance  
versus Drain Current  
Figure 3. On Resistance and Junction  
Capacitance versus Gate
−
Source Voltage  
3

MMBFJ309L, MMBFJ310L, SMMBFJ309L, SMMBFJ310L  
|S |,
 
|S  
|
11  
|S |,
 
|S |  
12 22  
21  
0.85 0.45  
0.79 0.39  
0.73 0.33  
0.67 0.27  
0.61 0.21  
0.55 0.15  
0.060 1.00  
0.048 0.98  
0.036 0.96  
0.024 0.94  
0.012 0.92  
0.90  
30  
24  
18  
12  
6.0  
0
3.0  
2.4  
1.8  
1.2  
0.6  
S
22  
V
= 10 V  
= 10 mA  
DS  
I
D
S
21  
T =
 
25
°
C  
A
Y
11  
V
= 10 V  
= 10 mA  
DS  
I
D
T =
 
25
°
C  
A
Y
Y
21  
S
11  
22  
S
12  
Y
12  
100  
200  
300  
500 700
 
1000  
100  
200  
300  
500 700
 
1000  
f, FREQUENCY (MHz)  
f, FREQUENCY (MHz)  
Figure 4. Common
−
Gate Y Parameter  
Figure 5. Common
−
Gate S Parameter  
Magnitude versus Frequency  
Magnitude versus Frequency  
q
,
q  
21 11  
q
,
q  
12 22  
q
,
q  
11 12  
q
,
q  
21 22  
180
°
50
°  
170
°
40
°  
160
°
30
°  
150
°
20
°  
140
°
10
°  
-ꢀ2
0
°
87
°  
-ꢀ20
°  
-ꢀ20
°
120
°  
-ꢀ40
°
100
°  
-ꢀ60
°
80
°  
-ꢀ80
°
60
°  
-ꢀ100
°
40
°  
-ꢀ120
°
20
°  
0
q
11  
q
22  
q
21  
-ꢀ40
°
86
°  
-ꢀ60
°  
q
-ꢀ20
°  
-ꢀ40
°  
-ꢀ60
°  
-ꢀ80
°  
-ꢀ100
°  
22  
q
21  
-ꢀ80
°
85
°  
-ꢀ100
°  
-ꢀ120
°
84
°  
-ꢀ140
°  
q
21  
q
12  
q
q
12  
11  
V
I
= 10 V  
V
I
= 10 V  
= 10 mA  
DS  
= 10 mA  
-ꢀ160
°
83
°  
-ꢀ180
°  
DS  
q
11  
D
D
T =
 
25
°
C  
A
T =
 
25
°
C  
A
130
°  
0
°  
100  
-ꢀ200
°
82
°  
200  
300  
500 700
 
1000  
100  
200  
300  
500 700
 
1000  
f, FREQUENCY (MHz)  
f, FREQUENCY (MHz)  
Figure 6. Common
−
Gate Y Parameter  
Phase
−
Angle versus Frequency  
Figure 7. S Parameter Phase
−
Angle  
versus Frequency  
4

MMBFJ309L, MMBFJ310L, SMMBFJ309L, SMMBFJ310L  
PACKAGE DIMENSIONS  
SOT
−
23 (TO
−
236)  
CASE 318
−
08  
ISSUE AP  
NOTES:  
1. DIMENSIONING
 
AND TOLERANCING PER ANSI Y14.5M, 1982.  
2. CONTROLLING
 
DIMENSION: INCH.  
D
3. MAXIMUM
 
LEAD THICKNESS INCLUDES LEAD FINISH  
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM  
THICKNESS OF BASE MATERIAL.  
SEE VIEW C  
3
4. DIMENSIONS
 
D AND E DO NOT INCLUDE MOLD FLASH,  
PROTRUSIONS, OR GATE BURRS.  
H
E
MILLIMETERS  
INCHES  
E
DIM  
A
A1  
b
c
D
E
e
L
L1  
MIN  
0.89  
0.01  
0.37  
0.09  
2.80  
1.20  
1.78  
0.10  
0.35  
2.10  
0
°  
NOM  
1.00  
0.06  
0.44  
0.13  
2.90  
1.30  
1.90  
0.20  
0.54  
2.40  
−−−  
MAX  
MIN  
0.035  
0.001  
0.015  
0.003  
0.110  
0.047  
0.070  
0.004  
0.014  
0.083  
0
°  
NOM  
0.040  
0.002  
0.018  
0.005  
0.114  
0.051  
0.075  
0.008  
0.021  
0.094  
−−−  
MAX  
0.044  
0.004  
0.020  
0.007  
0.120  
0.055  
0.081  
0.012  
0.029  
0.104  
10
°  
1.11  
0.10  
0.50  
0.18  
3.04  
1.40  
2.04  
0.30  
0.69  
2.64  
10
°  
c
1
2
b
0.25  
e
q
H
A
E
q
L
STYLE 10:  
A1  
L1  
VIEW C  
PIN 1.
 
DRAIN  
2. SOURCE  
3. GATE  
SOLDERING FOOTPRINT*  
0.95  
0.037  
0.95  
0.037  
2.0  
0.079  
0.9  
0.035  
mm  
inches  
ǒ
Ǔ
SCALE 10:1  
0.8  
0.031  
*For additional information on our Pb
−
Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.  
ON Semiconductor
and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC).
 
SCILLC reserves the right to make changes without further notice  
to any products herein.
 
SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time.
 
All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
 
SCILLC does not convey any license under its patent rights  
nor the rights of others.
 
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.
 
Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.
 
SCILLC is an Equal  
Opportunity/Affirmative Action Employer.
 
This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMEN
T
:  
N. American Technical Support
: 800
−
282
−
9855
T
o
ll Free  
USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
Japan Customer Focus Center  
Phone: 81
−
3
−
5817
−
1050  
ON Semiconductor Website
:

Literature Distribution Center for ON Semiconductor  
P
.
O. Box 5163, Denver, Colorado 80217 USA  
Phone
: 303
−
675
−
2175 or 800
−
344
−
3860
T
o
ll Free USA/Canada  
Fax
: 303
−
675
−
2176 or 800
−
344
−
3867
T
o
ll Free USA/Canada  
Email
: orderlit@onsemi.com  
For additional information, please contact your local  
Sales Representative  
MMBFJ309LT1/D