onsemi-MMBFU310LT1G
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MMBFU310LT1G
JFET
T
r
ansistor
N
−
Channel
Features
•
These Devices are Pb
−
Free, Halogen Free/BFR Free and are RoHS
Compliant
2 SOURCE
3
MAXIMUM RATINGS
GATE
Rating
Drain
−
Source Voltage
Gate
−
Source Voltage
Gate Current
Symbol
Value
25
Unit
Vdc
V
DS
V
GS
1 DRAIN
25
Vdc
I
G
10
mAdc
3
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
SOT
−
23 (TO
−
236AB)
CASE 318
−
08
STYLE 10
1
2
THERMAL CHARACTERISTICS
T
o
tal Device Dissipation FR
−
5 Board
T =
25
°
C
A
P
D
225
1.8
mW
MARKING DIAGRAM
mW/
°
C
Derate above 25
°
C
Thermal Resistance,
Junction
−
to
−
Ambient
R
556
°
C/W
°
C
q
JA
M6C M
G
G
1
Junction and Storage
T
e
mperature
T , T
J
−
55 to +150
stg
1. FR
−
5 = 1.0
ꢀ
0.75
ꢀ
0.062 in.
M6C =
Device Code
M
= Date Code*
G
= Pb
−
Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
†
Device
Package
Shipping
3000
T
a
pe & Reel
MMBFU310
L
T
1G
SOT
−
23
(Pb
−
Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 1994
1
Publication Order Number:
October, 2016
−
Rev. 6
MMBFU310LT1/D
MMBFU310LT1G
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Gate
−
Source Breakdown Voltage
−
(I =
−
1.0
m
Adc, V
= 0)
V
(BR)GSS
−
25
−
−
Vdc
pA
G
DS
Gate 1 Leakage Current
−
(V =
−
15 Vdc, V
= 0)
I
I
−
150
−
150
−
6.0
GS
DS
G1SS
G2SS
GS(off)
Gate 2 Leakage Current
−
(V =
−
15 Vdc, V
= 0, T
= 125
°
C)
−
nAdc
Vdc
GS
DS
A
Gate Source Cutoff Voltage
−
(V =
10 Vdc, I
= 1.0 nAdc)
V
−
2.5
DS
D
ON CHARACTERISTICS
Zero
−
Gate
−
Voltage Drain Current
−
(V =
10 Vdc, V
= 0)
I
DSS
24
60
mAdc
Vdc
DS
GS
Gate
−
Source Forward Voltage
−
(I =
10 mAdc, V
= 0)
V
GS(f)
−
1.0
G
DS
SMALL
−
SIGNAL CHARACTERISTICS
Forward Transfer Admittance
−
(V =
10 Vdc, I
= 10 mAdc, f = 1.0 kHz)
|Y |
10
−
18
250
5.0
2.5
mmhos
m
mhos
pF
DS
D
fs
Output Admittance
−
(V =
10 Vdc, I
= 10 mAdc, f = 1.0 kHz)
|y
|
os
DS
D
Input Capacitance
−
(V =
−
10 Vdc, V
= 0 Vdc, f = 1.0 MHz)
C
−
GS
DS
iss
Reverse Transfer Capacitance
−
(V =
−
10 Vdc, V
= 0 Vdc, f = 1.0 MHz)
C
−
pF
GS
DS
rss
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
70
60
50
40
30
20
10
0
70
60
35
30
T =
-ꢀ55
°
C
V
= 10 V
A
DS
V
= 10 V
I
T =
-ꢀ55
°
C
A
DS
f = 1.0 MHz
+ꢀ25
°
C
+ꢀ25
°
C
50
40
30
20
10
25
20
15
10
5.0
0
+ꢀ25
°
C
DSS
+ꢀ25
°
C
+150
°
C
-ꢀ55
°
C
+150
°
C
+150
°
C
+ꢀ25
°
C
-ꢀ55
°
C
+150
°
C
-1.0
0
-5.0
-4.0
-3.0
-2.0
1.0
, GATE-SOURCE VOLTAGE (VOLTS)
0
5.0
4.0
3.0
2.0
I
– V
, GATE-SOURCE VOLTAGE (VOLTS)
GS
D
V
GS
I
– V
, GATE-SOURCE CUTOFF VOLTAGE (VOLTS)
GS
DSS
Figure 1. Drain Current and Transfer
Characteristics vs Gate
−
Source Voltage
Figure 2. Forward Transconductance
vs Gate
−
Source Voltage
2
MMBFU310LT1G
100 k
10 k
10
120
96
72
48
24
0
1.0 k
R
DS
Y
fs
Y
fs
7.0
100
C
gs
4.0
V
V
= -ꢀ2.3 V =
= -ꢀ5.7 V =
10
1.0 k
100
GS(off)
Y
os
GS(off)
C
gd
1.0
0
1.0
0.01
0.1 0.2 0.3 0.5
1.0 2.0
3.0 5.0
10 20
30 50
100
10 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0
0
I ,
DRAIN CURRENT (mA)
D
V
GS
, GATE SOURCE VOLTAGE (VOLTS)
Figure 4. On Resistance and Junction
Capacitance vs Gate
−
Source Voltage
Figure 3. Common
−
Source Output Admittance
and Forward Transconductance vs Drain Current
|S |,
|S
|
11
|S |,
|S |
12 22
21
0.85 0.45
0.79 0.39
0.73 0.33
0.67 0.27
0.61 0.21
0.55 0.15
0.060 1.00
0.048 0.98
0.036 0.96
0.024 0.94
0.012 0.92
0.90
30
24
18
12
6.0
0
3.0
2.4
1.8
1.2
0.6
S
22
V
= 10 V
= 10 mA
DS
I
D
S
21
T =
25
°
C
A
Y
11
V
= 10 V
= 10 mA
DS
I
D
T =
25
°
C
A
Y
Y
21
S
11
22
S
12
Y
12
100
200
300
500 700
1000
100
200
300
500 700
1000
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 5. Common
−
Gate Y Parameter
Figure 6. Common
−
Gate S Parameter
Magnitude vs
Frequency
Magnitude vs Frequency
q
,
q
21 11
q
,
q
12 22
q
,
q
11 12
q
,
q
21 22
180
°
50
°
170
°
40
°
160
°
30
°
150
°
20
°
140
°
10
°
-ꢀ2
0
°
87
°
-ꢀ20
°
-ꢀ20
°
120
°
-ꢀ40
°
100
°
-ꢀ60
°
80
°
-ꢀ80
°
60
°
-ꢀ100
°
40
°
-ꢀ120
°
20
°
0
q
11
q
22
q
21
-ꢀ40
°
86
°
-ꢀ60
°
q
-ꢀ20
°
-ꢀ40
°
-ꢀ60
°
-ꢀ80
°
-ꢀ100
°
22
q
21
-ꢀ80
°
85
°
-ꢀ100
°
-ꢀ120
°
84
°
-ꢀ140
°
q
21
q
12
q
q
12
11
V
I
= 10 V
V
I
= 10 V
= 10 mA
DS
= 10 mA
-ꢀ160
°
83
°
-ꢀ180
°
DS
q
11
D
D
T =
25
°
C
A
T =
25
°
C
A
130
°
0
°
100
-ꢀ200
°
82
°
200
300
500 700
1000
100
200
300
500 700
1000
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 7. Common
−
Gate Y Parameter
Phase
−
Angle vs Frequency
Figure 8. S Parameter Phase
−
Angle
vs Frequency
3
MMBFU310LT1G
PACKAGE DIMENSIONS
SOT
−
23 (TO
−
236)
CASE 318
−
08
ISSUE AR
NOTES:
D
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
0.25
3
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
T
H
E
E
1
2
MILLIMETERS
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
DIM
A
A1
b
c
D
E
e
L
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
_
NOM
1.00
0.06
0.44
0.14
2.90
1.30
1.90
0.43
0.54
2.40
−−−
MAX
MIN
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
_
L
1.11
0.10
0.50
0.20
3.04
1.40
2.04
0.55
0.69
2.64
10
_
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
_
3X
b
L1
VIEW C
e
TOP VIEW
L1
A
H
E
T
c
A1
SEE VIEW C
SIDE VIEW
STYLE 10:
PIN 1.
DRAIN
END VIEW
2. SOURCE
3. GATE
RECOMMENDED
SOLDERING FOOTPRINT*
3X
0.90
2.90
3X
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
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regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
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PUBLICATION ORDERING INFORMATION
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T
:
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−
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−
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o
ll Free
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◊
MMBFU310LT1/D
