onsemi-MMBT2907ALT1G
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MMBT2907AL,
SMMBT2907AL
General Purpose
T
r
ansistors
PNP Silicon
Features
•
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
COLLECTOR
3
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
1
BASE
Compliant
MAXIMUM RATINGS
2
EMITTER
Rating
Symbol
Value
Unit
Collecto
r
−
E
mitter Voltage
V
CEO
V
CBO
V
EBO
−60
Vdc
Collecto
r
−
B
ase Voltage
−60
−5.0
Vdc
Vdc
3
SOT−23 (TO−236AB)
CASE 318
Emitte
r
−
B
ase Voltage
1
Collector Current − Continuous
I
−600
−1200
mAdc
mAdc
STYLE 6
C
2
I
CM
THERMAL CHARACTERISTICS
Characteristic
MARKING DIAGRAM
Symbol
Max
Unit
T
o
tal Device Dissipation − FR
−
5
B
oard
P
D
225
1.8
mW
mW/
°
C
A
2F M
G
Derate above 25
°
C
G
Thermal Resistance, Junction−to−Ambient
R
556
°
C/W
ꢀ
JA
1
T
o
tal Device Dissipation − Alumina
P
D
2F =
Device Code
300
2.4
mW
mW/
°
C
A
M
= Date Code*
G
= Pb−Free Package
Thermal Resistance, Junction−to−Ambient
R
417
°
C/W
ꢀ
JA
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
T
o
tal Device Dissipation − Heat Spreader
P
D
350
357
mW
°
C/W
°
C
A
Thermal Resistance, Junction−to−Ambient
Junction and Storage
T
e
mperature
R
ꢀ
JA
T , T
J
−55 to +150
stg
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR
−
5
=
1
.0
ꢀ
0.75
ꢀ
0.062 in.
†
Device
Package
Shipping
MMBT2907A
L
T
1G
SMMBT2907A
L
T
1G (Pb−Free)
SOT−23
3000 /
T
a
pe &
Reel
2. Alumina
= 0.4
ꢀ
0.3
ꢀ
0.024 in. 99.5% alumina.
3. Reference
SOA curve.
MMBT2907A
L
T
3G SOT−23
SMMBT2907A
L
T
3G (Pb−Free)
10,000 /
T
a
pe &
Reel
2
4. Heat
Spreader or equivalent = 450 mm
, 2 oz.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
September, 2015 − Rev. 14
MMBT2907A
L
T
1/D
MMBT2907AL, SMMBT2907AL
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
V
Vdc
(BR)CEO
−60
−60
−
−
(I =
−1.0 mAdc, I
= 0)
C
B
(I =
−10 mAdc, I
= 0)
C
B
Collecto
r
−
B
ase Breakdown Voltage (I
= −10
ꢁ
Adc, I
= 0)
V
V
−60
−5.0
−
−
−
Vdc
Vdc
C
E
(BR)CBO
Emitte
r
−
B
ase Breakdown Voltage (I
= −10
ꢁ
Adc, I
= 0)
E
C
(BR)EBO
Collector Cutoff Current (V
= −30 Vdc, V
= −0.5 Vdc)
I
−50
nAdc
ꢁ
Adc
CE
EB(off)
CEX
Collector Cutoff Current
I
CBO
−
−
−0.010
−10
(V =
−50 Vdc, I
= 0)
CB
E
(V =
−50 Vdc, I
= 0, T
= 125
°
C)
CB
E
A
Base Cutoff Current (V
= −30 Vdc, V
= −0.5 Vdc)
I
BL
−
−50
nAdc
−
CE
EB(off)
ON CHARACTERISTICS
DC Current Gain
h
FE
(I =
−0.1 mAdc, V
= −10 Vdc)
75
100
100
100
50
−
−
−
300
−
C
CE
(I =
−1.0 mAdc, V
= −10 Vdc)
C
CE
(I =
−10 mAdc, V
= −10 Vdc)
C
CE
(I =
−150 mAdc, V
= −10 Vdc)
C
CE
C
CE
V
Vdc
Vdc
CE(sat)
−
−
−0.4
−1.6
C
B
(I =
−500 mAdc, I
= −50 mAdc)
C
B
(I =
−150 mAdc, I
= −15 mAdc)
V
BE(sat)
−
−
−1.3
−2.6
C
B
(I =
−500 mAdc, I
= −50 mAdc)
C
B
SMALL
−
S
IGNAL CHARACTERISTICS
f
200
−
MHz
pF
T
(I =
−50 mAdc, V
= −20 Vdc, f = 100 MHz)
C
CE
Output Capacitance (V
= −10 Vdc, I
= 0, f = 1.0 MHz)
C
obo
−
−
8.0
30
CB
E
Input Capacitance (V
= −2.0 Vdc, I
= 0, f = 1.0 MHz)
C
EB
C
ibo
SWITCHING CHARACTERISTICS
Turn−On Time
Delay Time
Rise Time
t
−
−
−
−
−
−
45
10
on
(V =
−30 Vdc, I
= −150 mAdc,
CC
C
t
d
I
B1
= −15 mAdc)
t
r
40
ns
Turn−Off Time
Storage Time
Fall Time
t
100
80
off
(V =
−6.0 Vdc, I
= −150 mAdc,
CC
C
t
s
I
B1
= I
= −15 mAdc)
B2
t
f
30
5. Pulse
T
e
st: Pulse Width
v
300
ꢁ
s, Duty Cycle
v
2.0%.
6. f is
defined as the frequency at which |h
| extrapolates to unity.
T
fe
INPUT
INPUT
Z =
50
ꢂ
+15 V
-6.0 V
-30 V
200
Z =
50
ꢂ
o
o
PRF = 150 PPS
RISE TIME
≤
2.0 ns
P
.
W. < 200 ns
PRF = 150 PPS
RISE TIME
≤
2.0 ns
P
.
W. < 200 ns
1.0 k
37
1.0 k
1.0 k
TO OSCILLOSCOPE
RISE TIME
≤
5.0 ns
TO OSCILLOSCOPE
RISE TIME
≤
5.0 ns
0
0
50
-16 V
-30 V
50
1N916
200 ns
200 ns
Figure 1. Delay and Rise Time Test Circuit
Figure 2. Storage and Fall Time Test Circuit
2
MMBT2907AL, SMMBT2907AL
TYPICAL CHARACTERISTICS
1000
100
10
V
CE
= 10 V
T =
150
°
C
J
25
°
C
-ꢀ55
°
C
1.0
10
100
1000
I ,
COLLECTOR CURRENT (mA)
C
Figure 3. DC Current Gain
-1.0
-0.8
-0.6
-0.4
-0.2
0
I
C
= -1.0 mA
-10 mA
-100 mA
-500 mA
-0.005 -0.01
-0.02 -0.03
-0.05 -0.07 -0.1
-0.2 -0.3
-0.5 -0.7
-1.0
-3.0
-30
-20
-2.0
-5.0 -7.0
-10
-50
I ,
BASE CURRENT (mA)
B
Figure 4. Collector Saturation Region
300
200
500
300
V
CC
I /I
= 10
= -30 V
V
CC
I /I
= 10
= -30 V
200
C
B
C
B
t
r
100
70
I =
I
B1 B2
T =
25
°
C
J
t
f
T =
25
°
C
J
100
70
50
30
20
50
t
′
= t
– 1/8 t
f
s
s
30
20
t @
V
d
= 0 V
BE(off)
10
7.0
5.0
10
2.0 V
7.0
5.0
3.0
-5.0 -7.0
-10
-20 -30
-50 -70 -100
-200 -300
-500
-5.0 -7.0
-10
-20 -30
-50 -70
-100
-200 -300
-500
I ,
COLLECTOR CURRENT
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 5. Turn−On Time
Figure 6. Turn−Off Time
3
MMBT2907AL, SMMBT2907AL
TYPICAL SMALL
−
S
IGNAL Characteristics
NOISE FIGURE
V
CE
= 10 Vdc, T
= 25
°
C
A
10
8.0
6.0
4.0
2.0
0
10
f = 1.0 kHz
8.0
I
= -1.0 mA, R
= 430
ꢂ
s
C
6.0
4.0
I
= -50
ꢁ
A
C
-500
ꢁ
A, R
= 560
ꢂ
s
-100
ꢁ
A
-500
ꢁ
A
-1.0 mA
-50
ꢁ
A, R
= 2.7 k
ꢂ
s
-100
ꢁ
A, R
= 1.6 k
ꢂ
s
R =
OPTIMUM SOURCE RESISTANCE
s
2.0
0
0.01 0.02
0.05 0.1
0.2 0.5
1.0 2.0
5.0 10
20 50
100
50 100 200
500 1.0
k 2.0
k
5.0 k
10 k
20 k
50 k
f, FREQUENCY (kHz)
R , SOURCE RESISTANCE (OHMS)
s
Figure 7. Frequency Effects
Figure 8. Source Resistance Effects
30
400
300
20
C
eb
200
10
100
80
7.0
5.0
V
= -20 V
CE
T =
25
°
C
J
60
C
cb
40
30
3.0
2.0
20
-0.1
-0.2 -0.3
-0.5
-1.0
-2.0 -3.0
-5.0
-10
-20 -30
-1.0 -2.0
-5.0 -10 -20
-50 -100
-200
-500 -1000
REVERSE VOLTAGE (VOLTS)
I ,
COLLECTOR CURRENT (mA)
C
Figure 9. Capacitances
Figure 10. Current−Gain − Bandwidth Product
1
1.1
I /I
= 10
C
B
1.0
0.9
0.8
0.7
0.6
0.5
0.4
I /I
= 10
C
B
150
°
C
−55
°
C
25
°
C
−55
°
C
25
°
C
0.1
150
°
C
0.3
0.2
0.01
0.001
0.01
0.1
1
0.001
0.01
0.1
1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 11. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 12. Base Emitter Saturation Voltage vs.
Collector Current
4
MMBT2907AL, SMMBT2907AL
TYPICAL SMALL
−
S
IGNAL Characteristics
NOISE FIGURE
V
CE
= 10 Vdc, T
= 25
°
C
A
+0.5
0
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
V
CE
= 1 V
R
for V
CE(sat)
ꢀ
VC
−55
°
C
25
°
C
-0.5
-1.0
-1.5
-2.0
-2.5
150
°
C
R
for V
ꢀ
VB
BE
0.3
0.2
0.001
0.01
0.1
1
-0.1 -0.2 -0.5
-1.0 -2.0
-5.0 -10 -20
-50 -100
-200 -500
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 13. Base Emitter Voltage vs. Collector
Current
Figure 14. Temperature Coefficients
10
1 s
10 ms
100 ms
100
ꢁ
s 10
ꢁ
s
1 ms
1
0.1
0.01
Single Pulse
T
e
st
@ T
= 25
°
C
A
0.001
0.01
0.1
1
10
100
V
CE
(Vdc)
Figure 15. Safe Operating Area
5
MMBT2907AL, SMMBT2907AL
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING
AND TOLERANCING PER ANSI Y14.5M,
1982.
D
2. CONTROLLING
DIMENSION: INCH.
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
SEE VIEW C
3
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
H
E
MILLIMETERS
INCHES
E
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0
°
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
2.40
−−−
MAX
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0
°
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10
°
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
2.64
10
°
c
1
2
b
0.25
e
q
H
E
q
A
L
STYLE 6:
PIN 1.
BASE
A1
L1
VIEW C
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
mm
inches
ǒ
Ǔ
SCALE 10:1
0.8
0.031
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at
www.onsemi.com/site/pdf/Patent−Marking.pdf
. SCILLC
reserves the right to make changes without further notice to any products herein.
SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time.
All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts.
SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur.
Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part.
SCILLC is an Equal Opportunity/Affirmative Action Employer.
This literature is subject to all applicable
copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
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: 800−282−9855
T
o
ll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
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Phone: 81−3−5817−1050
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: 303−675−2175 or 800−344−3860
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o
ll Free USA/Canada
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o
ll Free USA/Canada
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: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
MMBT2907ALT1/D
