onsemi-MMBT2907ALT3G
| Part # | onsemi-MMBT2907ALT3G |
Download  | onsemi-MMBT2907ALT3G |
MMBT2907AL,
SMMBT2907AL
General Purpose
T
r
ansistors
PNP Silicon
Features
•
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
COLLECTOR
3
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
1
BASE
Compliant
MAXIMUM RATINGS
2
EMITTER
Rating
Symbol
Value
−60
Unit
Vdc
Collecto
r
−
E
mitter Voltage
Collecto
r
−
B
ase Voltage
V
CEO
V
CBO
V
EBO
−60
Vdc
3
SOT−23 (TO−236AB)
CASE 318
Emitte
r
−
B
ase Voltage
−5.0
Vdc
1
Collector Current − Continuous
I
C
−600
−1200
mAdc
mAdc
STYLE 6
2
I
CM
THERMAL CHARACTERISTICS
Characteristic
MARKING DIAGRAM
Symbol
Max
Unit
T
o
tal Device Dissipation − FR
−
5
B
oard
P
D
225
1.8
mW
mW/
°
C
A
2F M
G
Derate above 25
°
C
G
Thermal Resistance, Junction−to−Ambient
R
556
°
C/W
ꢀ
JA
1
T
o
tal Device Dissipation − Alumina
P
D
2F =
Device Code
300
2.4
mW
mW/
°
C
A
M
= Date Code*
G
= Pb−Free Package
Thermal Resistance, Junction−to−Ambient
R
417
°
C/W
ꢀ
JA
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
T
o
tal Device Dissipation − Heat Spreader
P
D
350
357
mW
°
C/W
°
C
A
Thermal Resistance, Junction−to−Ambient
Junction and Storage
T
e
mperature
R
ꢀ
JA
T , T
J
−55 to +150
stg
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR
−
5
=
1
.0
ꢀ
0.75
ꢀ
0.062 in.
†
Device
Package
Shipping
MMBT2907A
L
T
1G
SMMBT2907A
L
T
1G (Pb−Free)
SOT−23
3000 /
T
a
pe &
Reel
2. Alumina
= 0.4
ꢀ
0.3
ꢀ
0.024 in. 99.5% alumina.
3. Reference
SOA curve.
MMBT2907A
L
T
3G SOT−23
SMMBT2907A
L
T
3G (Pb−Free)
2
10,000 /
T
a
pe &
Reel
4. Heat
Spreader or equivalent = 450 mm
, 2 oz.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
October, 2016 − Rev. 15
MMBT2907A
L
T
1/D
MMBT2907AL, SMMBT2907AL
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
(I =
−1.0 mAdc, I
= 0)
V
Vdc
(BR)CEO
−60
−60
−
−
C
B
(I =
−10 mAdc, I
= 0)
C
B
Collecto
r
−
B
ase Breakdown Voltage (I
= −10
ꢁ
Adc, I
= 0)
V
V
−60
−5.0
−
−
−
Vdc
Vdc
C
E
(BR)CBO
Emitte
r
−
B
ase Breakdown Voltage (I
= −10
ꢁ
Adc, I
= 0)
E
C
(BR)EBO
Collector Cutoff Current (V
= −30 Vdc, V
= −0.5 Vdc)
I
−50
nAdc
ꢁ
Adc
CE
EB(off)
CEX
Collector Cutoff Current
I
CBO
−
−
−0.010
−10
(V =
−50 Vdc, I
= 0)
CB
E
(V =
−50 Vdc, I
= 0, T
= 125
°
C)
CB
E
A
Base Cutoff Current (V
= −30 Vdc, V
= −0.5 Vdc)
I
BL
−
−50
nAdc
−
CE
EB(off)
ON CHARACTERISTICS
DC Current Gain
h
FE
(I =
−0.1 mAdc, V
= −10 Vdc)
75
100
100
100
50
−
−
−
300
−
C
CE
(I =
−1.0 mAdc, V
= −10 Vdc)
C
CE
(I =
−10 mAdc, V
= −10 Vdc)
C
CE
(I =
−150 mAdc, V
= −10 Vdc)
C
CE
C
CE
V
Vdc
Vdc
CE(sat)
−
−
−0.4
−1.6
C
B
(I =
−500 mAdc, I
= −50 mAdc)
C
B
(I =
−150 mAdc, I
= −15 mAdc)
V
BE(sat)
−
−
−1.3
−2.6
C
B
(I =
−500 mAdc, I
= −50 mAdc)
C
B
SMALL
−
S
IGNAL CHARACTERISTICS
f
200
−
MHz
pF
T
(I =
−50 mAdc, V
= −20 Vdc, f = 100 MHz)
C
CE
Output Capacitance (V
= −10 Vdc, I
= 0, f = 1.0 MHz)
C
obo
−
−
8.0
30
CB
E
Input Capacitance (V
= −2.0 Vdc, I
= 0, f = 1.0 MHz)
C
EB
C
ibo
SWITCHING CHARACTERISTICS
Turn−On Time
Delay Time
Rise Time
t
−
−
−
−
−
−
45
10
on
(V =
−30 Vdc, I
= −150 mAdc,
CC
C
t
d
I
B1
= −15 mAdc)
t
r
40
ns
Turn−Off Time
Storage Time
Fall Time
t
100
80
off
(V =
−6.0 Vdc, I
= −150 mAdc,
CC
C
t
s
I
B1
= I
= −15 mAdc)
B2
t
f
30
5. Pulse
T
e
st: Pulse Width
v
300
ꢁ
s, Duty Cycle
v
2.0%.
6. f is
defined as the frequency at which |h
| extrapolates to unity.
T
fe
INPUT
INPUT
Z =
50
+15 V
-6.0 V
-30 V
200
Z =
50
o
ꢂ
ꢂ
o
PRF = 150 PPS
RISE TIME
≤
2.0 ns
P
.
W. < 200 ns
PRF = 150 PPS
RISE TIME
≤
2.0 ns
P
.
W. < 200 ns
1.0 k
37
1.0 k
1.0 k
TO OSCILLOSCOPE
RISE TIME
≤
5.0 ns
TO OSCILLOSCOPE
RISE TIME
≤
5.0 ns
0
0
50
-16 V
-30 V
50
1N916
200 ns
200 ns
Figure 1. Delay and Rise Time Test Circuit
Figure 2. Storage and Fall Time Test Circuit
2
MMBT2907AL, SMMBT2907AL
TYPICAL CHARACTERISTICS
1000
100
10
V
CE
= 10 V
T =
150
°
C
J
25
°
C
-ꢀ55
°
C
1.0
10
100
1000
I ,
COLLECTOR CURRENT (mA)
C
Figure 3. DC Current Gain
-1.0
-0.8
-0.6
-0.4
-0.2
0
I
C
= -1.0 mA
-10 mA
-100 mA
-500 mA
-0.005 -0.01
-0.02 -0.03
-0.05 -0.07 -0.1
-0.2 -0.3
-0.5 -0.7
-1.0
-3.0
-30
-20
-2.0
-5.0 -7.0
-10
-50
I ,
BASE CURRENT (mA)
B
Figure 4. Collector Saturation Region
300
200
500
300
V
CC
I /I
= 10
= -30 V
V
CC
I /I
= 10
= -30 V
200
C
B
C
B
t
r
100
70
I =
I
B1 B2
T =
25
°
C
J
t
f
T =
25
°
C
J
100
70
50
30
20
50
t
′
= t
– 1/8 t
f
s
s
30
20
t @
V
d
= 0 V
BE(off)
10
7.0
5.0
10
2.0 V
7.0
5.0
3.0
-5.0 -7.0
-10
-20 -30
-50 -70 -100
-200 -300
-500
-5.0 -7.0
-10
-20 -30
-50 -70
-100
-200 -300
-500
I ,
COLLECTOR CURRENT
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 5. Turn−On Time
Figure 6. Turn−Off Time
3
MMBT2907AL, SMMBT2907AL
TYPICAL SMALL
−
S
IGNAL Characteristics
NOISE FIGURE
V
CE
= 10 Vdc, T
= 25
°
C
A
10
8.0
6.0
4.0
2.0
0
10
f = 1.0 kHz
8.0
I
= -1.0 mA, R
= 430
ꢂ
s
C
6.0
4.0
I
= -50
ꢁ
A
C
-500
ꢁ
A, R
= 560
s
ꢂ
-100
ꢁ
A
-500
ꢁ
A
-1.0 mA
-50
ꢁ
A, R
= 2.7 k
s
ꢂ
-100
ꢁ
A, R
= 1.6 k
s
ꢂ
R =
OPTIMUM SOURCE RESISTANCE
s
2.0
0
0.01 0.02
0.05 0.1
0.2 0.5
1.0 2.0
5.0 10
20 50
100
50 100 200
500 1.0
k 2.0
k
5.0 k
10 k
20 k
50 k
f, FREQUENCY (kHz)
R , SOURCE RESISTANCE (OHMS)
s
Figure 7. Frequency Effects
Figure 8. Source Resistance Effects
30
400
300
20
C
eb
200
10
100
80
7.0
5.0
V
= -20 V
CE
T =
25
°
C
J
60
C
cb
40
30
3.0
2.0
20
-0.1
-0.2 -0.3
-0.5
-1.0
-2.0 -3.0
-5.0
-10
-20 -30
-1.0 -2.0
-5.0 -10 -20
-50 -100
-200
-500 -1000
REVERSE VOLTAGE (VOLTS)
I ,
COLLECTOR CURRENT (mA)
C
Figure 9. Capacitances
Figure 10. Current−Gain − Bandwidth Product
1
1.1
I /I
= 10
C
B
1.0
0.9
0.8
0.7
0.6
0.5
0.4
I /I
= 10
C
B
150
°
C
−55
°
C
25
°
C
−55
°
C
25
°
C
0.1
150
°
C
0.3
0.2
0.01
0.001
0.01
0.1
1
0.001
0.01
0.1
1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 11. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 12. Base Emitter Saturation Voltage vs.
Collector Current
4
MMBT2907AL, SMMBT2907AL
TYPICAL SMALL
−
S
IGNAL Characteristics
NOISE FIGURE
V
CE
= 10 Vdc, T
= 25
°
C
A
+0.5
0
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
V
CE
= 1 V
R
for V
CE(sat)
ꢀ
VC
−55
°
C
25
°
C
-0.5
-1.0
-1.5
-2.0
-2.5
150
°
C
R
for V
ꢀ
VB
BE
0.3
0.2
0.001
0.01
0.1
1
-0.1 -0.2 -0.5
-1.0 -2.0
-5.0 -10 -20
-50 -100
-200 -500
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 13. Base Emitter Voltage vs. Collector
Current
Figure 14. Temperature Coefficients
10
1 s
10 ms
100 ms
100
ꢁ
s 10
ꢁ
s
1 ms
1
0.1
0.01
Single Pulse
T
e
st
@ T
= 25
°
C
A
0.001
0.01
0.1
1
10
100
V
CE
(Vdc)
Figure 15. Safe Operating Area
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT
−
23 (TO
−
236)
CASE 318
−
08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
NOTES:
D
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
0.25
3
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
T
H
E
E
1
2
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
°
NOM
1.00
0.06
0.44
0.14
2.90
1.30
1.90
0.43
0.54
2.40
−−−
MAX
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
°
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
°
L
1.11
0.10
0.50
0.20
3.04
1.40
2.04
0.55
0.69
2.64
10
°
3X
b
L1
VIEW C
e
TOP VIEW
L1
A
H
E
T
c
A1
SEE VIEW C
SIDE VIEW
GENERIC
MARKING DIAGRAM*
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT
XXXM
G
G
1
3X
0.90
XXX = Specific Device Code
2.90
M
= Date Code
G
= Pb
−
Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present.
3X
0.95
0.80
PITCH
DIMENSIONS: MILLIMETERS
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
STYLE 7:
PIN 1.
EMITTER
2. BASE
STYLE 8:
PIN 1.
BASE
2. EMITTER
3. COLLECTOR
PIN 1.
ANODE
2. NO
CONNECTION
3. CATHODE
3. COLLECTOR
STYLE 9:
PIN 1.
ANODE
2. ANODE
STYLE 10:
STYLE 11:
STYLE 12:
STYLE 13:
PIN 1.
SOURCE
2. DRAIN
STYLE 14:
PIN 1.
CATHODE
2. GATE
PIN 1.
DRAIN
2. SOURCE
3. GATE
PIN 1.
ANODE
PIN 1.
CATHODE
2. CATHODE
3. ANODE
2. CATHODE
3. CATHODE
−
ANODE
3. CATHODE
3. GATE
3. ANODE
STYLE 15:
STYLE 16:
STYLE 17:
PIN 1.
NO CONNECTION
2. ANODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1.
GATE
2. CATHODE
3. ANODE
PIN 1.
ANODE
2. CATHODE
3. CATHODE
PIN 1.
NO CONNECTION
PIN 1.
CATHODE
PIN 1.
CATHODE
2. ANODE
3. GATE
2. CATHODE
3. ANODE
2. ANODE
3. CATHODE
−
ANODE
3. CATHODE
STYLE 21:
STYLE 22:
STYLE 23:
PIN 1.
ANODE
2. ANODE
STYLE 24:
STYLE 25:
STYLE 26:
PIN 1.
GATE
2. SOURCE
3. DRAIN
PIN 1.
RETURN
2. OUTPUT
3. INPUT
PIN 1.
GATE
2. DRAIN
PIN 1.
ANODE
2. CATHODE
3. GATE
PIN 1.
CATHODE
2. ANODE
3. SOURCE
3. NO
CONNECTION
3. CATHODE
STYLE 27:
STYLE 28:
PIN 1.
CATHODE
2. CATHODE
3. CATHODE
PIN 1.
ANODE
2. ANODE
3. ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT
−
23 (TO
−
236)
PAGE 1 OF 1
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