onsemi-MMBT3416LT3
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MMBT3416LT3G
General Purpose Amplifier
NPN Silicon
Features
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
COLLECTOR
3
MAXIMUM RATINGS
Rating
Collecto
r
−
E
mitter Voltage
Emitte
r
−
B
ase Voltage
Symbol
Value
40
Unit
Vdc
1
BASE
V
CEO
EBO
V
4.0
Vdc
Collector Current − Continuous
I
C
100
mAdc
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
3
T
o
tal Device Dissipation FR−5 Board,
P
D
225
1.8
mW
mW/
°
C
A
1
Derate above 25
°
C
2
Thermal Resistance, Junction−to−Ambient
R
556
°
C/W
q
JA
SOT−23 (TO−236)
CASE 318
T
o
tal Device Dissipation Alumina Substrate,
P
D
300
2.4
mW
mW/
°
C
A
Derate above 25
°
C
STYLE 6
Thermal Resistance, Junction−to−Ambient
Junction and Storage
T
e
mperature
R
417
°
C/W
°
C
q
JA
T , T
J
−55 to +150
stg
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5
= 1.0 x 0.75 x 0.062 in.
GP M
G
G
2. Alumina
= 0.4 x 0.3 x 0.024 in. 99.5% alumina.
1
GP =
Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
†
Device
Package
Shipping
MMBT3416
L
T
3G SOT−23 10,000/
T
a
pe
& Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 1998
1
Publication Order Number:
June, 2018 − Rev. 4
MMBT3416
L
T
3/D
MMBT3416LT3G
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Collecto
r
−
E
mitter Breakdown Voltage
V
40
4.0
−
−
Vdc
Vdc
(BR)CEO
(I =
1.0 mAdc, I
= 0)
C
B
Emitte
r
−
B
ase Breakdown Voltage
V
−
(BR)EBO
(I =
100
m
Adc, I
= 0)
E
C
Collector Cutoff Current
I
100
100
nAdc
nAdc
CBO1
(V =
25 Vdc, I
= 0)
CB
E
Emitter Cutoff Current
I
−
EBO
(V =
5.0 Vdc, I
= 0)
EB
C
ON CHARACTERISTICS
DC Current Gain
h
75
−
225
0.3
1.3
−
FE
(I =
2.0 mAdc, V
= 4.5 Vdc)
C
CE
Collecto
r
−
E
mitter Saturation Voltage
(I =
50 mAdc, I
= 3.0 mAdc)
V
Vdc
Vdc
CE(sat)
C
B
Bas
e
−
E
mitter Saturation Voltage
(I =
50 mAdc, I
= 3.0 mAdc)
V
0.6
BE(sat)
C
B
SMALL
−
S
IGNAL CHARACTERISTICS
Collector Cutoff Current
I
−
15
−
m
Adc
CBO2
(V =
18 Vdc, T
= 100
°
C)
CB
A
Small−Signal Current Gain
h
FE
75
−
(I =
2.0 mAdc, V
= 4.0 Vdc, f = 1 kHz)
C
CE
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
EQUIVALENT SWITCHING TIME TEST CIRCUITS
+ꢀ3.0 V
+ꢀ3.0 V
t
1
10 < t
< 500
m
s
1
DUTY CYCLE = 2%
300 ns
DUTY CYCLE = 2%
+10.9 V
<
1
.0 ns
275
275
+10.9 V
10 k
10 k
0
-ꢀ0.5 V
<1.0 ns
C
< 4.0 pF*
C <
4.0 pF
S
S
-ꢀ9.1 V
1N916
*
T
o
tal shunt capacitance of test jig and connectors
Figure 1. Turn−On Time
Figure 2. Turn−Off Time
2
MMBT3416LT3G
TYPICAL NOISE CHARACTERISTICS
(V
CE
= 5.0 Vdc, T
A
= 25
°
C)
20
10
100
I
C
= 1.0 mA
BANDWIDTH = 1.0 Hz
R
≈ ∞
BANDWIDTH = 1.0 Hz
50
I
C
= 1.0 mA
R
= 0
S
S
20
300
m
A
300
m
A
100
m
A
10
5.0
7.0
5.0
100
m
A
2.0
1.0
10
m
A
30
m
A
0.5
0.2
0.1
30
m
A
3.0
2.0
10
m
A
10 20
50 100 200
500 1ꢁk
2ꢁk
5ꢁk 10ꢁk
10
20
50 100 200
500 1ꢁk
2ꢁk
5ꢁk 10
f, FREQUENCY (Hz)
f, FREQUENCY (Hz)
Figure 3. Noise Voltage
Figure 4. Noise Current
NOISE FIGURE CONTOURS
(V
CE
= 5.0 Vdc, T
A
= 25
°
C)
500ꢁk
1ꢁM
500ꢁk
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
200ꢁk
100ꢁk
50ꢁk
200ꢁk
100ꢁk
50ꢁk
20ꢁk
20ꢁk
10ꢁk
10ꢁk
5ꢁk
2.0 dB
1.0 dB
5ꢁk
2ꢁk
1ꢁk
3.0 dB
4.0 dB
2.0 dB
2ꢁk
1ꢁk
3.0 dB
5.0 dB
8.0 dB
6.0 dB
10 dB
500
500
200
100
50
200
100
10
20 30
50 70 100
200 300
500 700
1ꢁk
10
20 30
50 70 100
200 300
500 700
1
I ,
COLLECTOR CURRENT (
m
A)
C
I ,
COLLECTOR CURRENT (
m
A)
C
Figure 5. Narrow Band, 100 Hz
Figure 6. Narrow Band, 1.0 kHz
500ꢁk
10 Hz to 15.7 kHz
200ꢁk
100ꢁk
50ꢁk
Noise Figure is defined as:
2
20ꢁk
2
R
n S
2
1
ń
2
e
n
)
4KTR
)
I
S
10ꢁk
5ꢁk
10
ǒ
Ǔ
NF
+
20 log
4KTR
S
1.0 dB
e
n
= Noise Voltage of the Transistor referred to the input. (Figure
2ꢁk
1ꢁk
2.0 dB
I
n
= Noise Current of the Transistor referred to the input. (Figure
3.0 dB
−23
K
T
R
= Boltzman’s Constant (1.38 x 10
=
T
e
mperature of the Source Resistance (
°
K)
= Source Resistance (Ohms)
j/
°
K)
500
5.0 dB
8.0 dB
200
100
50
S
20 30
50 70 100
200 300
500 700
1ꢁk
10
I ,
COLLECTOR CURRENT (
m
A)
C
Figure 7. Wideband
3
MMBT3416LT3G
TYPICAL STATIC CHARACTERISTICS
400
200
T =
125
°
C
J
25
°
C
-ꢀ55
°
C
100
80
MPS390
60
V
V
= 1.0 V
= 10 V
4
CE
CE
40
0.004 0.006 0.01
0.02 0.03
0.05 0.07 0.1
0.2 0.3
0.5 0.7
1.0
3.0
2.0
5.0 7.0 10
20
30
50 70
100
I ,
COLLECTOR CURRENT (mA)
C
Figure 8. DC Current Gain
1.0
0.8
0.6
0.4
0.2
0
100
T =
25
°
C
A
MPS3904
T =
25
°
C
I
B
= 500
m
A
400
m
A
PULSE WIDTH = 300
m
s
J
DUTY CYCLE
≤
2.0%
80
60
300
m
A
200
m
A
I
C
= 1.0 mA
10 mA
50 mA
100 mA
40
20
0
100
m
A
0.002 0.005 0.01 0.02
0.05 0.1 0.2
0.5 1.0
2.0
5.0 10
20
0
5.0
10
15
20
25
30
35
I ,
BASE CURRENT (mA)
B
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 9. Collector Saturation Region
Figure 10. Collector Characteristics
1.4
1.2
1.6
0.8
0
*APPLIES for I
/I
≤
h /2
C
B
FE
T =
25
°
C
J
25
°
C to 125
°
C
–
5
5
°
C to 25
°
C
1.0
0.8
0.6
0.4
*
q
for V
VC
CE(sat)
V
@ I
/I =
10
C B
BE(sat)
-ꢀ0.8
-ꢀ1.6
-ꢀ2.4
V
BE(on)
@ V
= 1.0 V
CE
25
°
C to 125
°
C
–
5
5
°
C to 25
°
C
0.2
0
q
for V
BE
VB
V
@ I
/I =
10
C B
CE(sat)
0.1 0.2
0.5 1.0
2.0
5.0
10
20
50 100
0.1
0.2
0.5
1.0 2.0
5.0 10 20
50
1
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 11. “On” Voltages
Figure 12. Temperature Coefficients
4
MMBT3416LT3G
TYPICAL DYNAMIC CHARACTERISTICS
1000
300
200
V
CC
I /I
= 10
= 3.0 V
700
500
C
B
t
s
T =
25
°
C
J
100
70
300
200
50
t
r
100
70
30
20
t
f
50
t @
V
d
= 0.5 Vdc
BE(off)
V
CC
I /I
= 10
= 3.0 V
10
30
20
C
B
7.0
5.0
I =
I
B1 B2
T =
25
°
C
J
3.0
10
1.0
2.0 3.0
5.0 7.0
10
20 30
50 70
100
1.0
2.0 3.0
5.0 7.0
10
20 30
50 70
1
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 13. Turn−On Time
Figure 14. Turn−Off Time
500
10
7.0
5.0
T =
25
°
C
J
f = 1.0 MHz
T =
25
°
C
J
f = 100 MHz
300
200
C
ib
V
CE
= 20 V
5.0 V
C
ob
3.0
2.0
100
70
50
1.0
0.5 0.7 1.0
2.0 3.0
5.0 7.0
10
20 30
50
0.05 0.1
0.2
0.5
1.0
2.0
5.0
10
20
I ,
COLLECTOR CURRENT (mA)
C
V ,
REVERSE VOLTAGE (VOLTS)
R
Figure 15. Current−Gain — Bandwidth Product
Figure 16. Capacitance
20
10
200
100
V
CE
f = 1.0 kHz
= 10 Vdc
V
CE
f = 1.0 kHz
= 10 Vdc
MPS3904
h
T =
25
°
C
A
T =
25
°
C
A
7.0
5.0
70
50
≈
200 @ I
= 1.0 mA
fe
C
MPS3904
≈
200 @ I
= 1.0 mA
3.0
2.0
h
fe
30
20
C
1.0
0.7
0.5
10
7.0
5.0
0.3
0.2
3.0
2.0
0.1
0.2
0.5
1.0 2.0
5.0
10
20
50
100
0.1
0.2
0.5
1.0 2.0
5.0
10
20
50
1
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 17. Input Impedance
Figure 18. Output Admittance
5
MMBT3416LT3G
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
0.1
0.07
0.05
FIGURE 19A
DUTY CYCLE, D = t
/t
1
2
0.05
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
P
(pk)
READ TIME AT t
(SEE AN−569)
1
0.02
0.01
Z
T
= r(t)
ꢀ
R
q
q
JA
Z
q
JA(t)
JA(t)
− T
= P
J(pk)
A
(pk)
0.03
0.02
t
1
SINGLE PULSE
t
2
0.01
0.01 0.02
0.05 0.1 0.2
0.5 1.0
2.0
5.0
10 20
50
100 200
500 1.0ꢁk
2.0ꢁk 5.0ꢁk
10ꢁk 20ꢁk
100
50ꢁk
t, TIME (ms)
Figure 19. Thermal Response
4
3
10
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
V
CC
= 30 Vdc
A train of periodical power pulses can be represented by the
model as shown in Figure 19A. Using the model and the device
thermal response the normalized effective transient thermal
resistance of Figure 19 was calculated for various duty cycles.
10
10
2
I
CEO
To find Z
steady state value R
, multiply the value obtained from Figure 19 by the
q
JA(t)
1
0
10
.
q
JA
Example:
I
CBO
AND
10
The MPS3904 is dissipating 2.0 W peak under the following
conditions:
I
@ V
= 3.0 Vdc
CEX
BE(off)
t =
1.0 ms, t
= 5.0 ms. (D = 0.2)
-1
1
2
10
10
Using Figure 19 at a pulse width of 1.0 ms and D = 0.2, the
reading of r(t) is 0.22.
-2
The peak rise in junction temperature is therefore
D
T = r(t) x P
-4 -2
0
0
+
2
0
+
4
0
+
6
0
+
8
0
+
1
00
+
1
20
+
1
40
+
1
60
x R
q
= 0.22 x 2.0 x 200 = 88
°
C.
JA
0
(pk)
T , JUNCTION TEMPERATURE (
°
C)
J
For more information, see AN−569.
Figure 19A.
400
200
The safe operating area curves indicate I
−V limits
of the
C
CE
100
m
s
transistor that must be observed for reliable operation. Collector
load lines for specific circuits must fall below the limits indicated
by the applicable curve.
1.0 ms
10
m
s
1.0 s
100
T
= 25
°
C
The data of Figure 20 is based upon T
is variable depending upon conditions. Pulse curves are valid for
= 150
°
C; T
or T
C
J(pk)
C A
dc
60
40
T =
25
°
C
duty cycles to 10% provided T
≤
150
°
C. T
may be
A
J(pk)
J(pk)
dc
calculated from the data in Figure 19. At high case or ambient
temperatures, thermal limitations will reduce the power that can
be handled to values less than the limitations imposed by second
breakdown.
20
10
T =
150
°
C
J
CURRENT LIMIT
THERMAL LIMIT
6.0
4.0
SECOND BREAKDOWN LIMIT
40
2.0
4.0 6.0
8.0 10
20
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 20.
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT
−
23 (TO
−
236)
CASE 318
−
08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
NOTES:
D
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
0.25
3
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
T
H
E
E
1
2
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
°
NOM
1.00
0.06
0.44
0.14
2.90
1.30
1.90
0.43
0.54
2.40
−−−
MAX
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
°
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
°
L
1.11
0.10
0.50
0.20
3.04
1.40
2.04
0.55
0.69
2.64
10
°
3X
b
L1
VIEW C
e
TOP VIEW
L1
A
H
E
T
c
A1
SEE VIEW C
SIDE VIEW
GENERIC
MARKING DIAGRAM*
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT
XXXM
G
G
1
3X
0.90
XXX = Specific Device Code
2.90
M
= Date Code
G
= Pb
−
Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present.
3X
0.95
0.80
PITCH
DIMENSIONS: MILLIMETERS
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
STYLE 7:
PIN 1.
EMITTER
2. BASE
STYLE 8:
PIN 1.
BASE
2. EMITTER
3. COLLECTOR
PIN 1.
ANODE
2. NO
CONNECTION
3. CATHODE
3. COLLECTOR
STYLE 9:
PIN 1.
ANODE
2. ANODE
STYLE 10:
STYLE 11:
STYLE 12:
STYLE 13:
PIN 1.
SOURCE
2. DRAIN
STYLE 14:
PIN 1.
CATHODE
2. GATE
PIN 1.
DRAIN
2. SOURCE
3. GATE
PIN 1.
ANODE
PIN 1.
CATHODE
2. CATHODE
3. ANODE
2. CATHODE
3. CATHODE
−
ANODE
3. CATHODE
3. GATE
3. ANODE
STYLE 15:
STYLE 16:
STYLE 17:
PIN 1.
NO CONNECTION
2. ANODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1.
GATE
2. CATHODE
3. ANODE
PIN 1.
ANODE
2. CATHODE
3. CATHODE
PIN 1.
NO CONNECTION
PIN 1.
CATHODE
PIN 1.
CATHODE
2. ANODE
3. GATE
2. CATHODE
3. ANODE
2. ANODE
3. CATHODE
−
ANODE
3. CATHODE
STYLE 21:
STYLE 22:
STYLE 23:
PIN 1.
ANODE
2. ANODE
STYLE 24:
STYLE 25:
STYLE 26:
PIN 1.
GATE
2. SOURCE
3. DRAIN
PIN 1.
RETURN
2. OUTPUT
3. INPUT
PIN 1.
GATE
2. DRAIN
PIN 1.
ANODE
2. CATHODE
3. GATE
PIN 1.
CATHODE
2. ANODE
3. SOURCE
3. NO
CONNECTION
3. CATHODE
STYLE 27:
STYLE 28:
PIN 1.
CATHODE
2. CATHODE
3. CATHODE
PIN 1.
ANODE
2. ANODE
3. ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT
−
23 (TO
−
236)
PAGE 1 OF 1
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information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does
onsemi
assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using
onsemi
products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by
onsemi
. “Typical” parameters which may be provided in
onsemi
data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
onsemi
does not convey any license
under any of its intellectual property rights nor the rights of others.
onsemi
products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use
onsemi
products for any such unintended or unauthorized application, Buyer shall indemnify and hold
onsemi
and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that
onsemi
was negligent regarding the design or manufacture of the part.
onsemi
is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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