onsemi-MMBT3904LT3G
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MMBT3904L, SMMBT3904L
General Purpose
T
r
ansistor
NPN Silicon
Features
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
•
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
COLLECTOR
3
1
BASE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
2
Collecto
r
−
E
mitter Voltage
V
CEO
V
CBO
V
EBO
40
Vdc
EMITTER
Collecto
r
−
B
ase Voltage
60
Vdc
Vdc
Emitte
r
−
B
ase Voltage
6.0
200
900
3
Collector Current − Continuous
THERMAL CHARACTERISTICS
I
C
mAdc
mAdc
SOT−23 (TO−236)
CASE 318
I
CM
1
STYLE 6
2
Characteristic
Symbol
Max
Unit
T
o
tal Device Dissipation FR
−
5
B
oard
P
D
MARKING DIAGRAM
225
1.8
mW
mW/
°
C
A
Derate above 25
°
C
1AM M
G
Thermal Resistance, Junction−to−Ambient
R
556
°
C/W
q
JA
G
T
o
tal Device Dissipation Alumina
P
D
1
@T =
25
°
C
300
2.4
mW
mW/
°
C
A
Derate above 25
°
C
1AM =
Specific Device Code
M
G
= Date Code*
= Pb−Free Package
Thermal Resistance, Junction−to−Ambient
Junction and Storage
T
e
mperature
R
417
°
C/W
°
C
q
JA
T , T
J
−55 to +150
(Note: Microdot may be in either location)
stg
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR
−
5
=
1
.0
ꢀ
0.75
ꢀ
0.062 in.
2. Alumina
= 0.4
ꢀ
0.3
ꢀ
0.024 in. 99.5% alumina.
3. Reference
SOA curve.
ORDERING INFORMATION
†
Device
Package
Shipping
MMBT3904
L
T
1G
SMMBT3904
L
T
1G
SOT−23
(Pb−Free)
3000 /
T
a
pe &
Reel
MMBT3904
L
T
3G
SMMBT3904
L
T
3G
SOT−23
(Pb−Free)
10,000 /
T
a
pe &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 1994
1
Publication Order Number:
October, 2016 − Rev. 13
MMBT3904
L
T
1/D
MMBT3904L, SMMBT3904L
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collecto
r
−
E
mitter Breakdown Voltage (I
= 1.0 mAdc, I
= 0)
V
40
60
6.0
−
−
−
Vdc
Vdc
C
B
(BR)CEO
(BR)CBO
(BR)EBO
Collecto
r
−
B
ase Breakdown Voltage (I
= 10
m
Adc, I
= 0)
V
V
C
E
Emitte
r
−
B
ase Breakdown Voltage (I
= 10
m
Adc, I
= 0)
−
Vdc
E
C
Base Cutoff Current (V
= 30 Vdc, V
= 3.0 Vdc)
I
BL
50
50
nAdc
nAdc
CE
EB
Collector Cutoff Current (V
= 30 Vdc, V
= 3.0 Vdc)
I
CEX
−
CE
EB
DC Current Gain
H
−
FE
(I =
0.1 mAdc, V
= 1.0 Vdc)
40
70
−
−
C
CE
(I =
1.0 mAdc, V
= 1.0 Vdc)
C
CE
(I =
10 mAdc, V
= 1.0 Vdc)
100
60
300
−
C
CE
(I =
50 mAdc, V
= 1.0 Vdc)
C
CE
(I =
100 mAdc, V
= 1.0 Vdc)
30
−
C
CE
Collecto
r
−
E
mitter Saturation Voltage
(I =
10 mAdc, I
= 1.0 mAdc)
V
Vdc
Vdc
CE(sat)
−
−
0.2
0.3
C
B
(I =
50 mAdc, I
= 5.0 mAdc)
C
B
Bas
e
−
E
mitter Saturation Voltage
(I =
10 mAdc, I
= 1.0 mAdc)
V
BE(sat)
0.65
−
0.85
0.95
C
B
(I =
50 mAdc, I
= 5.0 mAdc)
C
B
SMALL
−
S
IGNAL CHARACTERISTICS
Curren
t
−
G
ain − Bandwidth Product (I
= 10 mAdc, V
= 20 Vdc, f = 100 MHz)
f
T
300
−
−
MHz
pF
C
CE
Output Capacitance (V
= 5.0 Vdc, I
= 0, f = 1.0 MHz)
C
obo
4.0
8.0
10
CB
E
Input Capacitance (V
= 0.5 Vdc, I
= 0, f = 1.0 MHz)
C
ibo
−
pF
EB
C
Input Impedance (V
= 10 Vdc, I
= 1.0 mAdc, f = 1.0 kHz)
h
1.0
0.5
100
1.0
−
k
W
CE
C
ie
re
fe
−4
Voltage Feedback Ratio (V
= 10 Vdc, I
= 1.0 mAdc, f = 1.0 kHz)
h
h
8.0
400
40
X 10
−
CE
C
Smal
l
−
S
ignal Current Gain (V
= 10 Vdc, I
= 1.0 mAdc, f = 1.0 kHz)
CE
C
Output Admittance (V
= 10 Vdc, I
= 1.0 mAdc, f = 1.0 kHz)
h
oe
m
mhos
dB
CE
C
Noise Figure (V
= 5.0 Vdc, I
= 100
m
Adc, R
= 1.0 k ohms, f = 1.0 kHz)
NF
5.0
CE
C
S
SWITCHING CHARACTERISTICS
Delay Time
t
t
−
−
−
−
35
35
d
(V =
3.0 Vdc, V
=
−
0
.5 Vdc,
CC
BE
ns
ns
I
C
= 10 mAdc, I
= 1.0 mAdc)
B1
Rise Time
t
r
Storage Time
200
50
s
(V =
3.0 Vdc,
CC
I
= 10 mAdc, I
= I
= 1.0 mAdc)
C
B1 B2
Fall Time
t
f
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse
T
e
st: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
+3 V
+3 V
DUTY CYCLE = 2%
300 ns
t
1
10 < t
< 500
m
s
1
+10.9 V
DUTY CYCLE = 2%
+10.9 V
< 1 ns
275
275
10 k
10 k
0
-ꢀ0.5 V
C
< 4 pF*
C <
4 pF*
S
S
1N916
-ꢀ9.1 V
′
*
T
o
tal shunt capacitance of test jig and connectors
< 1 ns
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
2
MMBT3904L, SMMBT3904L
TYPICAL TRANSIENT CHARACTERISTICS
T =
25
°
C
J
T =
125
°
C
J
10
5000
V
CC
I /I
= 10
= 40 V
3000
2000
7.0
C
B
5.0
1000
700
C
ibo
500
3.0
2.0
Q
T
300
200
C
obo
Q
A
100
70
1.0
0.1
50
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30 40
1.0
2.0 3.0
5.0 7.0
10
20 30
50 70 100
200
REVERSE BIAS VOLTAGE (VOLTS)
I ,
COLLECTOR CURRENT (mA)
C
Figure 3. Capacitance
Figure 4. Charge Data
500
500
I /I
= 10
C B
V
CC
I /I
= 10
= 40 V
300
200
300
200
C
B
100
70
100
70
t @
V =
3.0 V
r CC
50
50
30
20
30
20
40 V
15 V
10
10
2.0 V
7
5
7
5
t @
V =
0 V
OB
d
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70
100
200
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70
100
200
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 5. Tur
n
−
O
n Time
Figure 6. Rise Time
500
500
1
t
′
= t
– / t
s
s
8
f
V
I
= 40 V
CC
= I
300
200
300
200
I
= I
B1 B2
I /I
= 20
C B
I /I
= 10
C B
B1 B2
I /I
= 20
C B
100
70
100
70
I /I
= 20
C B
50
50
I /I
= 10
C B
I /I
= 10
C B
30
20
30
20
10
10
7
5
7
5
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70
100
200
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70
100
200
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 7. Storage Time
Figure 8. Fall Time
3
MMBT3904L, SMMBT3904L
TYPICAL AUDIO SMALL
−
S
IGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(V
CE
= 5.0 Vdc, T
A
= 25
°
C, Bandwidth = 1.0 Hz)
12
10
8
14
SOURCE RESISTANCE = 200
W
= 1.0 mA
f = 1.0 kHz
I
C
= 1.0 mA
12
10
8
I
C
I
C
= 0.5 mA
SOURCE RESISTANCE = 200
W
= 0.5 mA
I
C
= 50
m
A
I
C
6
4
I
C
= 100
m
A
SOURCE RESISTANCE = 1.0 k
= 50
m
A
6
4
2
0
I
C
2
0
SOURCE RESISTANCE = 500
W
= 100
m
A
I
C
0.1 0.2
0.4
1.0 2.0 4.0
10
20
40
100
0.1 0.2
0.4
1.0 2.0
4.0
10
20
40
100
f, FREQUENCY (kHz)
R ,
SOURCE RESISTANCE (k OHMS)
S
Figure 9.
Figure 10.
h PARAMETERS
(V
CE
= 10 Vdc, f = 1.0 kHz, T
A
= 25
°
C)
100
300
200
50
20
10
5
100
70
50
30
2
1
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 11. Current Gain
Figure 12. Output Admittance
20
10
10
7.0
5.0
5.0
2.0
3.0
2.0
1.0
0.5
1.0
0.7
0.5
0.2
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 13. Input Impedance
Figure 14. Voltage Feedback Ratio
4
MMBT3904L, SMMBT3904L
TYPICAL STATIC CHARACTERISTICS
1000
T =
+150
°
C
J
V
CE
= 1.0 V
+25
°
C
-ꢀ55
°
C
100
10
1
0.1
1.0
10
100
1000
I ,
COLLECTOR CURRENT (mA)
C
Figure 15. DC Current Gain
1.0
0.8
0.6
0.4
T =
25
°
C
J
I
C
= 1.0 mA
10 mA
30 mA
100 mA
0.2
0
0.01
0.02
0.03
0.05 0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
I ,
BASE CURRENT (mA)
B
Figure 16. Collector Saturation Region
5
MMBT3904L, SMMBT3904L
0.8
0.7
1.4
I /I
= 10
C
B
I /I
= 10
C
B
1.2
1.0
0.8
0.6
150
°
C
25
°
C
0.6
0.5
0.4
0.3
0.2
−55
°
C
−55
°
C
25
°
C
150
°
C
0.4
0.2
0.1
0
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 17. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 18. Base Emitter Saturation Voltage vs.
Collector Current
1.4
1.0
0.5
1.2
1.0
0.8
0.6
V
= 1 V
+25
°
C TO +125
°
C
CE
q
FOR V
CE(sat)
VC
0
-ꢀ55
°
C TO +25
°
C
−55
°
C
25
°
C
-ꢀ0.5
-ꢀ1.0
-ꢀ55
°
C TO +25
°
C
+25
°
C TO +125
°
C
150
°
C
q
FOR V
BE(sat)
0.4
0.2
VB
-ꢀ1.5
-ꢀ2.0
0.0001
0.001
0.01
0.1
1
0
20
40
60
80 100
120 140
160 180
200
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 20. Temperature Coefficients
Figure 19. Base Emitter Voltage vs. Collector
Current
1
1000
1 ms
10 ms
1 s
100 ms
V
= 1 V
CE
T =
25
°
C
A
Thermal Limit
0.1
100
0.01
Single Pulse
T
e
st
@ T
= 25
°
C
A
10
0.001
0.1
1
10
100
1000
0.01
0.1
1
(Vdc)
10
100
I ,
COLLECTOR CURRENT (mA)
V
CE
C
Figure 21. Current Gain Bandwidth vs.
Collector Current
Figure 22. Safe Operating Area
6
MMBT3904L, SMMBT3904L
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
NOTES:
D
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
0.25
3
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
T
H
E
E
1
2
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
°
NOM
1.00
0.06
0.44
0.14
2.90
1.30
1.90
0.43
0.54
2.40
−−−
MAX
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
°
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
°
L
1.11
0.10
0.50
0.20
3.04
1.40
2.04
0.55
0.69
2.64
10
°
3X
b
L1
VIEW C
e
TOP VIEW
A
H
E
T
c
A1
SEE VIEW C
STYLE 6:
SIDE VIEW
PIN 1.
BASE
2. EMITTER
3. COLLECTOR
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
3X
2.90
0.90
3X
0.95
0.80
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
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o
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◊
MMBT3904LT1/D
