onsemi-MMBT3904WT1G
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DATA SHEET
COLLECTOR
General Purpose
Transistors
3
NPN and PNP Silicon
1
BASE
MMBT3904WT1G, NPN,
SMMBT3904WT1G, NPN,
MMBT3906WT1G, PN
P
,
SMMBT3906WT1G, PNP
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT
−
323/SC
−
70 package which
is designed for low power surface mount applications.
2
EMITTER
3
SC
−
70 (SOT
−
323)
CASE 419
STYLE 3
1
2
MARKING DIAGRAM
Features
•
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC
−
Q101 Qualified and
PPAP Capable
xx M
G
G
1
•
These Devices are Pb
−
Free, Halogen Free/BFR Free and are RoHS
xx =
AM for MMBT3904WT1,
SMMBT3904WT
Compliant
= 2A
for MMBT3906WT1,
SMMBT3906WT1
MAXIMUM RATINGS
M
= Date
Code*
Rating
Symbol
Value
Unit
G
= Pb
−
Free Package
Collecto
r
−
Emitter Voltage
V
V
V
Vdc
CEO
CBO
EBO
(Note: Microdot may be in either location)
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
40
−
40
*Date Code orientation may vary depending up-
on manufacturing location.
Collecto
r
−
Base Voltage
Vdc
Vdc
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
60
−
40
ORDERING INFORMATION
Emitte
r
−
Base Voltage
†
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
6.0
−
5.0
Device
Package
Shipping
MMBT3904WT1G,
SMMBT3904WT1G
SC
−
70/
SOT
−
323
(Pb
−
Free)
3000 /
T
a
pe &
Reel
Collector Current
−
Continuous
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
I
C
mAdc
200
−
200
MMBT3906WT1G,
SMMBT3906WT1G
SC
−
70/
SOT
−
323
(Pb
−
Free)
3000 /
T
a
pe &
Reel
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
P
150
mW
D
@T =
25
°
C
A
Thermal Resistance, Junction
−
to
−
Ambient
R
833
°
C/W
°
C
q
JA
Junction and Storage
T
e
mperature
T , T
J
−
55 to +150
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Device
mounted on FR4 glass epoxy printed circuit board using the minimum
recommended footprint.
©
Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
October, 2022
−
Rev. 10
MMBT3904WT1/D
MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PN
P
,
SMMBT3906WT1G, PNP
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
V
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
(I =
1.0 mAdc, I
= 0)
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
40
−
−
C
B
(I =
−
1.0 mAdc, I
= 0)
−
40
C
B
Collecto
r
−
Base Breakdown Voltage
(I =
10
m
Adc, I
= 0)
V
V
Vdc
Vdc
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
60
−
40
−
−
C
E
(I =
−
10
m
Adc, I
= 0)
C
E
Emitte
r
−
Base Breakdown Voltage
(I =
10
m
Adc, I
= 0)
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
6.0
−
5.0
−
−
E
C
(I =
−
10
m
Adc, I
= 0)
E
C
Base Cutoff Current
I
nAdc
nAdc
BL
(V =
30 Vdc, V
= 3.0 Vdc)
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
−
−
50
CE
EB
(V =
−
30 Vdc, V
=
−
3.0 Vdc)
−
50
CE
EB
Collector Cutoff Current
(V =
30 Vdc, V
= 3.0 Vdc)
I
CEX
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
−
−
50
−
50
CE
EB
EB
(V =
−
30 Vdc, V
=
−
3.0 Vdc)
CE
DC Current Gain
h
FE
−
(I =
0.1 mAdc, V
= 1.0 Vdc)
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
40
70
100
60
30
60
80
100
60
30
−
−
300
−
−
−
−
300
−
−
C
CE
(I =
1.0 mAdc, V
= 1.0 Vdc)
C
CE
CE
CE
CE
(I =
10 mAdc, V
= 1.0 Vdc)
C
(I =
50 mAdc, V
= 1.0 Vdc)
C
(I =
100 mAdc, V
= 1.0 Vdc)
C
(I =
−
0.1 mAdc, V
=
−
1.0 Vdc)
C
CE
CE
CE
CE
(I =
−
1.0 mAdc, V
=
−
1.0 Vdc)
C
(I =
−
10 mAdc, V
=
−
1.0 Vdc)
C
(I =
−
50 mAdc, V
=
−
1.0 Vdc)
C
(I =
−
100 mAdc, V
=
−
1.0 Vdc)
C
CE
Collecto
r
−
Emitter Saturation Voltage
(I =
10 mAdc, I
= 1.0 mAdc)
V
Vdc
Vdc
CE(sat)
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
−
−
−
−
0.2
0.3
−
0.25
−
0.4
C
B
(I =
50 mAdc, I
= 5.0 mAdc)
C
B
(I =
−
10 mAdc, I
=
−
1.0 mAdc)
C
B
(I =
−
50 mAdc, I
=
−
5.0 mAdc)
C
B
Bas
e
−
Emitter Saturation Voltage
(I =
10 mAdc, I
= 1.0 mAdc)
V
BE(sat)
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
0.65
−
−
0.65
−
0.85
0.95
−
0.85
−
0.95
C
B
(I =
50 mAdc, I
= 5.0 mAdc)
C
B
(I =
−
10 mAdc, I
=
−
1.0 mAdc)
C
B
(I =
−
50 mAdc, I
=
−
5.0 mAdc)
C
B
2. Pulse
T
e
st: Pulse Width
v
300
m
s; Duty Cycle
v
2.0%.
2
MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PN
P
,
SMMBT3906WT1G, PNP
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted) (Continued)
A
Characteristic
SMALL
−
SIGNAL CHARACTERISTICS
Curren
t
−
Gain
−
Bandwidth Product
Symbol
Min
Max
Unit
f
T
MHz
(I =
10 mAdc, V
= 20 Vdc, f = 100 MHz)
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
300
250
−
−
C
CE
(I =
−
10 mAdc, V
=
−
20 Vdc, f = 100 MHz)
C
CE
Output Capacitance
C
pF
pF
obo
(V =
5.0 Vdc, I
= 0, f = 1.0 MHz)
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
−
−
4.0
4.5
CB
E
(V =
−
5.0 Vdc, I
= 0, f = 1.0 MHz)
CB
E
Input Capacitance
C
ibo
(V =
0.5 Vdc, I
= 0, f = 1.0 MHz)
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
−
−
8.0
10.0
EB
C
C
(V =
−
0.5 Vdc, I
= 0, f = 1.0 MHz)
EB
Input Impedance
h
k
W
ie
re
fe
(V =
10 Vdc, I
= 1.0 mAdc, f = 1.0 kHz)
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
1.0
2.0
10
12
CE
C
(V =
−
10 Vdc, I
=
−
1.0 mAdc, f = 1.0 kHz)
CE
C
−
4
Voltage Feedback Ratio
(V =
10 Vdc, I
= 1.0 mAdc, f = 1.0 kHz)
h
h
X 10
−
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
0.5
0.1
8.0
10
CE
C
C
(V =
−
10 Vdc, I
=
−
1.0 mAdc, f = 1.0 kHz)
CE
Smal
l
−
Signal Current Gain
(V =
10 Vdc, I
= 1.0 mAdc, f = 1.0 kHz)
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
100
100
400
400
CE
C
C
(V =
−
10 Vdc, I
=
−
1.0 mAdc, f = 1.0 kHz)
CE
Output Admittance
h
m
mhos
dB
oe
(V =
10 Vdc, I
= 1.0 mAdc, f = 1.0 kHz)
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
1.0
3.0
40
60
CE
C
(V =
−
10 Vdc, I
=
−
1.0 mAdc, f = 1.0 kHz)
CE
C
Noise Figure
NF
(V =
5.0 Vdc, I
= 100
m
Adc, R
= 1.0 k
W
, f = 1.0 kHz)
CE
C
S
MMBT3904WT1, SMMBT3904WT1
−
−
5.0
4.0
(V =
−
5.0 Vdc, I
=
−
100
m
Adc, R
= 1.0 k
W
, f = 1.0 kHz)
CE
C
S
MMBT3906WT1, SMMBT3906WT1
SWITCHING CHARACTERISTICS
Characteristic
Condition
Symbol
Min
Max
Unit
(V =
3.0 Vdc, V
=
−
0.5 Vdc)
Delay Time
Rise Time
Storage Time
Fall Time
t
35
35
ns
CC
BE
d
MMBT3904WT1, SMMBT3904WT1
−
−
(V =
−
3.0 Vdc, V
= 0.5 Vdc)
CC
BE
MMBT3906WT1, SMMBT3906WT1
(I =
10 mAdc, I
= 1.0 mAdc)
t
35
35
C
B1
r
MMBT3904WT1, SMMBT3904WT1
−
−
(I =
−
10 mAdc, I
=
−
1.0 mAdc)
C
B1
MMBT3906WT1, SMMBT3906WT1
(V =
3.0 Vdc, I
= 10 mAdc)
t
200
225
ns
CC
C
s
MMBT3904WT1, SMMBT3904WT1
−
−
(V =
−
3.0 Vdc, I
=
−
10 mAdc)
CC
C
MMBT3906WT1, SMMBT3906WT1
(I =
I =
1.0 mAdc)
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
t
−
−
50
75
B1
B2
f
(I =
I =
−
1.0 mAdc)
B1
B2
3
MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PN
P
,
SMMBT3906WT1G, PNP
MMBT3904WT1, SMMBT3904WT1
+3 V
+3 V
DUTY CYCLE = 2%
300 ns
t
1
10 < t
< 500
m
s
1
+10.9 V
DUTY CYCLE = 2%
+10.9 V
< 1 ns
275
275
10 k
10 k
0
-ꢀ0.5 V
C <
4 pF*
S
C <
4 pF*
S
1N916
-ꢀ9.1 V
< 1 ns
*
T
o
tal shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
4
MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PN
P
,
SMMBT3906WT1G, PNP
MMBT3904WT1, SMMBT3904WT1
TYPICAL TRANSIENT CHARACTERISTICS
T =
25
°
C
J
T =
125
°
C
J
500
500
I /I
= 10
C B
V
CC
I /I
= 10
= 40 V
300
200
300
200
C B
100
70
100
70
t @
V =
3.0 V
r CC
50
50
30
20
30
20
40 V
15 V
10
7
MMBT3904WT1
10
7
MMBT3904WT1
2.0 V
t @
V =
0 V
d OB
5
5
1.0
2.0 3.0
5.0 7.0
10
20 30
50 70
100
200
1.0
2.0 3.0
5.0 7.0
10
20 30
50 70
100
200
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 3. Tur
n
−
On Time
Figure 4. Rise Time
500
500
1
t
′
= t
– / t
8 f
s
s
V
I
= 40 V
CC
= I
300
200
300
200
I
= I
B1 B2
I /I
= 20
C B
I /I
= 10
C B
B1 B2
I /I
= 20
C B
100
70
100
70
I /I
= 20
C B
50
50
I /I
= 10
C B
I /I
= 10
C B
30
20
30
20
10
7
10
7
MMBT3904WT1
MMBT3904WT1
5
5
200
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70
100
200
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70
100
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 5. Storage Time
Figure 6. Fall Time
TYPICAL AUDIO SMALL
−
SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS
(V =
5.0 VDC, T
= 25
°
C, BANDWIDTH = 1.0 HZ)
CE
A
12
10
8
14
12
SOURCE RESISTANCE = 200
W
I =
1.0 mA
f = 1.0 kHz
I =
1.0 mA
C
C
I =
0.5 mA
C
10
8
SOURCE RESISTANCE = 200
W
I =
0.5 mA
I =
50
m
A
C
C
6
I =
100
m
A
C
SOURCE RESISTANCE = 1.0 k
I =
50
m
A
6
4
2
0
C
4
2
0
SOURCE RESISTANCE = 500
W
I =
100
m
A
C
MMBT3904WT1
MMBT3904WT1
0.1 0.2
0.4
1.0 2.0 4.0
10
20
40
100
0.1 0.2
0.4
1.0 2.0
4.0
10
20
40
100
f, FREQUENCY (kHz)
R ,
SOURCE RESISTANCE (k OHMS)
S
Figure 7. Noise Figure
Figure 8. Noise Figure
5
MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PN
P
,
SMMBT3906WT1G, PNP
MMBT3904WT1, SMMBT3904WT1
H PARAMETERS
(V
CE
= 10 VDC, F = 1.0 KHZ, T
A
= 25
°
C)
100
300
200
MMBT3904WT1
MMBT3904WT1
50
20
10
5
100
70
50
2
1
30
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 9. Current Gain
Figure 10. Output Admittance
20
10
10
7.0
5.0
MMBT3904WT1
MMBT3904WT1
5.0
3.0
2.0
2.0
1.0
0.5
1.0
0.7
0.5
0.2
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 11. Input Impedance
Figure 12. Voltage Feedback Ratio
TYPICAL STATIC CHARACTERISTICS
1000
100
10
V
= 1 V
CE
T =
150
°
C
J
25
°
C
-ꢀ55
°
C
MMBT3904WT1
1000
1.0
10
100
I ,
COLLECTOR CURRENT (mA)
C
Figure 13. DC Current Gain
6
MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PN
P
,
SMMBT3906WT1G, PNP
MMBT3904WT1, SMMBT3904WT1
1.0
0.8
0.6
0.4
T =
25
°
C
J
MMBT3904WT1
I =
1.0 mA
C
10 mA
30 mA
100 mA
0.2
0
0.01
0.02
0.03
0.05 0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
I ,
BASE CURRENT (mA)
B
Figure 14. Collector Saturation Region
0.9
1.4
I /I
= 10
C
B
0.8
0.7
0.6
0.5
0.4
0.3
0.2
I /I
= 10
C
B
1.2
1.0
0.8
0.6
150
°
C
25
°
C
−
55
°
C
25
°
C
−
55
°
C
150
°
C
0.4
0.2
0.1
0
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 15. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 16. Base Emitter Saturation Voltage vs.
Collector Current
1.4
V
CE
= 1 V
1.2
1.0
0.8
0.6
−
55
°
C
25
°
C
150
°
C
0.4
0.2
0.0001
0.001
0.01
0.1
1
I ,
COLLECTOR CURRENT (A)
C
Figure 17. Base Emitter Voltage vs. Collector
Current
7
MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PN
P
,
SMMBT3906WT1G, PNP
MMBT3904WT1, SMMBT3904WT1
T =
25
°
C
J
T =
125
°
C
J
1.0
0.5
10
MMBT3904WT1
MMBT3904WT1
7.0
5.0
+25
°
C TO +125
°
C
-ꢀ55
°
C TO +25
°
C
q
FOR V
CE(sat)
VC
0
C
ibo
-ꢀ0.5
-ꢀ1.0
3.0
2.0
-ꢀ55
°
C TO +25
°
C
+25
°
C TO +125
°
C
C
obo
q
FOR V
BE(sat)
VB
-ꢀ1.5
-ꢀ2.0
1.0
0
20
40
60
80 100
120 140
160 180
200
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30 40
REVERSE BIAS VOLTAGE (VOLTS)
I ,
COLLECTOR CURRENT (mA)
C
Figure 18. Temperature Coefficients
Figure 19. Capacitance
1000
1
100 mS
10 mS
1 S
V
= 1 V
CE
T =
25
°
C
A
1 mS
0.1
100
10
Thermal Limit
0.01
0.001
0.1
1
10
100
1000
0.1
1
10
, COLLECTOR EMITTER VOLTAGE (V)
CE
100
I ,
COLLECTOR CURRENT (mA)
V
C
Figure 20. Current Gain Bandwidth Product
vs. Collector Current
Figure 21. Safe Operating Area
8
MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PN
P
,
SMMBT3906WT1G, PNP
MMBT3906WT1, SMMBT3906WT1
3 V
3 V
< 1 ns
+ꢀ9.1 V
275
275
< 1 ns
10 k
10 k
0
C <
4 pF*
S
C <
4 pF*
S
1N916
+10.6 V
300 ns
10 < t
< 500
m
s
1
t
1
10.9 V
DUTY CYCLE = 2%
DUTY CYCLE = 2%
*
T
o
tal shunt capacitance of test jig and connectors
Figure 22. Delay and Rise Time
Equivalent Test Circuit
Figure 23. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
T =
25
°
C
J
T =
125
°
C
J
500
500
MMBT3906WT1
I /I
= 10
C B
V
= 40 V
CC
300
200
300
200
MMBT3906WT1
I =
I
B1 B2
I /I
= 20
C B
100
100
70
70
50
t @
V =
3.0 V
r CC
50
I /I
= 10
C B
30
20
15 V
30
20
40 V
2.0 V
10
7
10
7
t @
V =
0 V
d OB
5
5
1.0
2.0 3.0
5.0 7.0
10
20 30
50 70
100
200
1.0
2.0 3.0
5.0 7.0
10
20
30 50
70 100
200
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 24. Tur
n
−
On Time
Figure 25. Fall Time
TYPICAL AUDIO SMALL
−
SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(V
CE
=
−
5.0 VDC, T
A
= 25
°
C, BANDWIDTH = 1.0 HZ)
12
5.0
4.0
3.0
SOURCE RESISTANCE = 200
W
f = 1.0 kHz
I =
1.0 mA
C
I =
1.0 mA
C
10
8.0
6.0
4.0
2.0
0
I =
0.5 mA
C
SOURCE RESISTANCE = 200
W
I =
0.5 mA
C
SOURCE RESISTANCE = 2.0 k
I =
50
m
A
C
2.0
1.0
0
I =
50
m
A
C
SOURCE RESISTANCE = 2.0 k
I =
100
m
A
C
I =
100
m
A
C
MMBT3906WT1
10 20
40
MMBT3906WT1
20
40
0.1 0.2 0.4
1.0 2.0 4.0
100
0.1 0.2
0.4
1.0 2.0
4.0
10
100
f, FREQUENCY (kHz)
R ,
SOURCE RESISTANCE (k
W
)
S
Figure 26.
Figure 27.
9
MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PN
P
,
SMMBT3906WT1G, PNP
MMBT3906WT1, SMMBT3906WT1
H PARAMETERS
(V
CE
=
−
10 VDC, F = 1.0 KHZ, T
A
= 25
°
C)
100
300
200
70
MMBT3906WT1
MMBT3906WT1
50
30
20
100
70
10
50
30
7.0
5.0
0.1
0.2 0.3
0.5 0.7
1.0
2.0 3.0
5.0 7.0
10
0.1
0.2 0.3
0.5 0.7
1.0
2.0 3.0
5.0 7.0
10
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 28. Current Gain
Figure 29. Output Admittance
20
10
10
7.0
5.0
MMBT3906WT1
MMBT3906WT1
7.0
5.0
3.0
2.0
3.0
2.0
1.0
0.7
0.5
1.0
0.7
0.5
0.3
0.2
0.1
0.2 0.3
0.5 0.7
1.0
2.0 3.0
5.0 7.0
10
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
10
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 30. Input Impedance
Figure 31. Voltage Feedback Ratio
STATIC CHARACTERISTICS
1000
100
10
V
CE
= 1 V
T =
150
°
C
J
25
°
C
-ꢀ55
°
C
MMBT3906WT1
1000
1.0
10
100
I ,
COLLECTOR CURRENT (mA)
C
Figure 32. DC Current Gain
10
MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PN
P
,
SMMBT3906WT1G, PNP
MMBT3906WT1, SMMBT3906WT1
1.0
0.8
0.6
0.4
0.2
T =
25
°
C
J
MMBT3906WT1
I =
1.0 mA
C
10 mA
30 mA
100 mA
0
0.01
0.02
0.03
0.05 0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
I ,
BASE CURRENT (mA)
B
Figure 33. Collector Saturation Region
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
1.4
I /I
= 10
C
B
I /I
= 10
C
B
1.2
1.0
0.8
0.6
150
°
C
25
°
C
−
55
°
C
25
°
C
−
55
°
C
150
°
C
0.10
0.4
0.2
0.05
0
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 34. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 35. Base Emitter Saturation Voltage vs.
Collector Current
1.4
V
CE
= 1 V
1.2
1.0
0.8
0.6
−
55
°
C
25
°
C
150
°
C
0.4
0.2
0.0001
0.001
0.01
0.1
1
I ,
COLLECTOR CURRENT (A)
C
Figure 36. Base Emitter Voltage vs. Collector
Current
11
MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PN
P
,
SMMBT3906WT1G, PNP
MMBT3906WT1, SMMBT3906WT1
T =
25
°
C
J
T =
125
°
C
J
10
1.0
0.5
MMBT3906WT1
7.0
5.0
q
FOR V
+25
°
C TO +125
°
C
VC
CE(sat)
C
-ꢀ55
°
C TO +25
°
C
obo
0
-0.5
-1.0
-1.5
-2.0
C
ibo
MMBT3906WT1
3.0
2.0
+25
°
C TO +125
°
C
-ꢀ55
°
C TO +25
°
C
q
FOR V
BE(sat)
VS
1.0
0
20
40
60
80 100
120 140
160 180
200
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
30 40
I ,
COLLECTOR CURRENT (mA)
C
REVERSE BIAS VOLTAGE (VOLTS)
Figure 37. Temperature Coefficients
Figure 38. Capacitance
1000
1
100 mS
10 mS
V
CE
= 1 V
T =
25
°
C
A
1 mS
0.1
1 S
100
10
Thermal Limit
0.01
0.001
0.1
1
10
100
1000
0.1
1
10
, COLLECTOR EMITTER VOLTAGE (V)
CE
100
I ,
COLLECTOR CURRENT (mA)
V
C
Figure 39. Current Gain Bandwidth Product
vs. Collector Current
Figure 40. Safe Operating Area
12
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC
−
70 (SOT
−
323)
CASE 419
ISSUE R
DATE 11 OCT 2022
SCALE 4:1
GENERIC
MARKING DIAGRAM
XX M
G
G
1
XX
M
G
= Specific Device Code
= Date Code
= Pb
−
Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLE 1:
STYLE 2:
PIN 1.
ANODE
2. N.C.
3. CATHODE
STYLE 3:
PIN 1.
BASE
2. EMITTER
3. COLLECTOR
STYLE 4:
STYLE 5:
PIN 1.
ANODE
2. ANODE
3. CATHODE
CANCELLED
PIN 1.
CATHODE
2. CATHODE
3. ANODE
STYLE 6:
STYLE 7:
PIN 1.
BASE
STYLE 8:
PIN 1.
GATE
2. SOURCE
3. DRAIN
STYLE 9:
STYLE 10:
STYLE 11:
PIN 1.
EMITTER
PIN 1.
ANODE
PIN 1.
CATHODE
2. ANODE
PIN 1.
CATHODE
2. CATHODE
2. BASE
2. EMITTER
2. CATHODE
3. COLLECTOR
3. COLLECTOR
3. CATHODE-ANODE
3. ANODE-CATHODE
3. CATHODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42819B
SC
−
70 (SOT
−
323)
PAGE 1 OF 1
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