onsemi-MMBT3906K
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MMBT3906K
PNP Epitaxial Silicon Transistor
General Purpose Transistor
Marking
3
2AK
2
SOT-23
1
1. Base
2. Emitter
3. Collector
Absolute Maximum Ratings
T
a
= 25°C unless otherwise noted
Symbol
Parameter
Value
-40
Units
V
V
CBO
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
CEO
V
EBO
I
C
-40
V
-5
V
-200
mA
mW
°
C
P
C
Collector Power Dissipation
350
T
J,
T
STG
Operating Junction and Storage
T
e
mperature Range
-55 ~ 150
Electrical Characteristics
T
a
=25
°
C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CEX
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage *
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Test Condition
Min.
-40
-40
-5
Max. Units
I
C
= -10
µ
A, I
E
= 0
V
V
V
I
C
= -1.0mA, I
B
= 0
I
E
= 10
µ
A, I
C
= 0
V
CE
= -30V, V
EB
= -3V
-50
nA
h
FE
DC Current Gain *
V
CE
= -1V, I
C
= -0.1mA
V
CE
= -1V, I
C
= -1mA
V
CE
= -1V, I
C
= -10mA
V
CE
= -1V, I
C
= -50mA
V
CE
= -1V, I
C
= -100mA
60
80
100
60
300
30
V
CE
(sat)
V
BE
(sat)
Collector-Emitter Saturation Voltage *
Base-Emitter Saturation Voltage *
I
C
= -10mA, I
B
= -1mA
I
C
= -50mA, I
B
= -5.0mA
-0.25
-0.4
V
V
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
-0.65
250
-0.85
-0.95
V
V
f
T
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
I
C
= -10mA, V
CE
= -20
V
, f =
1
00MHz
V
CB
= -5V, I
E
=0, f=1.0MHz
MHz
pF
C
ob
NF
4.5
4
I
C
= -100
µ
A, V
CE
= -5
V
,
R
S
= 1K
Ω
dB
f = 10Hz to 15.7KHz
t
ON
Turn On Time
V
CC
= -3
V
,
V
BE
= -0.5V
I
C
= -10mA, I
B1
= -1mA
70
ns
ns
t
OFF
Turn Off Time
V
CC
= -3
V
,
I
C
= -10mA, I
B1
= I
B2
= -1mA
300
* Pulse
T
e
st: Pulse Width
≤
300
µ
s, Duty Cycle
≤
2%
©2006 Fairchild Semiconductor Corporation
MMBT3906K Rev. B
1
Typical Performance Characteristics
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
350
1.4
Vce=1V
B=10
300
1.2
125C
250
1.0
0.8
75C
200
25C
150
0.6
125C
100
50
0.4
75C
25C
0.2
1
10
100
0.1
1
10
100
Collector Current, [mA]
Collector Current, [mA]
Figure 3. Base-Emitter Saturation Voltage
Figure 4. Collector – Base Leakage Current
1.0
B=10
0.9
V
CB
= 25V
10
0.8
0.7
25C
75C
125C
0.6
1
0.5
0.4
0.1
0.3
25
50
75
100
125
150
1
10
100
Temperature, [‘C]
Collector Current, [mA]
Figure 5. Output Capacitance
Figure 6. Power Dissipation vs
Ambient Temperature
100
0.4
0.3
0.2
0.1
0.0
I
E
= 0
f =
1
MHz
10
1
0.1
-1
-10
-100
0
25
50
75
100
125
150
Temperature, [
O
C]
V
C
B
[V], Collector-Base Voltage
2
MMBT3906K Rev. B
Mechanical Dimensions
SOT-23
0.40
0.03
0.03~0.10
0.38 REF
+0.05
–0.023
0.40
0.03
0.12
0.96~1.14
2.90
0.10
0.95
0.03
0.95
0.03
1.90
0.03
0.508REF
Dimensions in Millimeters
3
MMBT3906K Rev. B
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to
be an exhaustive list of all such trademarks.
®
ACEx™
FAST
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
PowerSaver™
SuperSOT™-6
SuperSOT™-8
SyncFET™
®
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT
™
DOME™
FASTr™
FPS™
FRFET™
GlobalOptoisolator™
GTO™
PowerTrench
®
QFET
®
QS™
TinyLogic
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
µ
SerDes™
TINYOPTO™
TruTranslation™
UHC™
HiSeC™
2
®
EcoSPARK™
I C™
MSXPro™
OCX™
UltraFET
2
E CMOS™
i-Lo
™
UniFET™
VCX™
Wire™
EnSigna™
FACT™
ImpliedDisconnect™
IntelliMAX™
OCXPro™
OPTOLOGIC
ScalarPump™
SILENT SWITCHER
®
®
FACT Quiet Series™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
SMART START™
SPM™
Stealth™
SuperFET™
SuperSOT™-3
Across the board. Around the world.™
The Power Franchise
Programmable Active Droop™
®
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Definition
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I17
4
MMBT3906K Rev. B
