onsemi-MMBT3906LT1
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MMBT3906L, SMMBT3906L
General Purpose
T
r
ansistor
PNP Silicon
Features
•
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
COLLECTOR
3
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
BASE
MAXIMUM RATINGS
2
EMITTER
Rating
Symbol
Value
Unit
Collecto
r
−
E
mitter Voltage
V
V
V
−40
Vdc
CEO
CBO
EBO
Collecto
r
−
B
ase Voltage
−40
−5.0
−200
−800
Vdc
Vdc
3
Emitte
r
−
B
ase Voltage
1
Collector Current − Continuous
THERMAL CHARACTERISTICS
I
C
mAdc
mAdc
2
I
CM
SOT−23 (TO−236)
CASE 318
STYLE 6
Characteristic
Symbol
Max
Unit
T
o
tal Device Dissipation FR
−
5
B
oard
P
D
225
1.8
mW
mW/
°
C
A
MARKING DIAGRAM
Derate above 25
°
C
Thermal Resistance, Junction−to−Ambient
R
556
°
C/W
q
JA
T
o
tal Device Dissipation Alumina
P
D
2A M
G
300
2.4
mW
mW/
°
C
A
G
1
Thermal Resistance, Junction−to−Ambient
Junction and Storage
T
e
mperature
R
417
°
C/W
°
C
q
JA
2A =
Specific Device Code
T , T
J
−65 to +150
stg
M
= Date Code*
G
= Pb−Free Package
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR
−
5
=
1
.0
ꢀ
0.75
ꢀ
0.062 in.
2. Alumina
= 0.4
ꢀ
0.3
ꢀ
0.024 in. 99.5% alumina.
3. Reference
SOA curve.
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
†
Device
Package
Shipping
MMBT3906
L
T
1G
SOT−23
(Pb−Free)
3,000 /
T
a
pe &
Reel
MMBT3906
L
T
3G
SMMBT3906
L
T
1G
SOT−23
(Pb−Free)
10,000 /
T
a
pe &
Reel
SOT−23
(Pb−Free)
3,000 /
T
a
pe &
Reel
SMMBT3906
L
T
3G
SOT−23
(Pb−Free)
10,000 /
T
a
pe &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 1994
1
Publication Order Number:
August, 2017 − Rev. 13
MMBT3906
L
T
1/D
MMBT3906L, SMMBT3906L
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collecto
r
−
E
mitter Breakdown Voltage
V
Vdc
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
(I =
−1.0 mAdc, I
= 0)
−40
−40
−5.0
−
−
−
C
B
Collecto
r
−
B
ase Breakdown Voltage
(I =
−10
m
Adc, I
= 0)
V
V
C
E
Emitte
r
−
B
ase Breakdown Voltage
Vdc
(I =
−10
m
Adc, I
= 0)
−
E
C
Base Cutoff Current
I
BL
nAdc
nAdc
(V =
−30 Vdc, V
= −3.0 Vdc)
−50
−50
CE
EB
Collector Cutoff Current
I
CEX
(V =
−30 Vdc, V
= −3.0 Vdc)
−
CE
EB
DC Current Gain
H
−
FE
(I =
−0.1 mAdc, V
= −1.0 Vdc)
60
80
−
−
C
CE
(I =
−1.0 mAdc, V
= −1.0 Vdc)
C
CE
(I =
−10 mAdc, V
= −1.0 Vdc)
100
60
300
−
C
CE
(I =
−50 mAdc, V
= −1.0 Vdc)
C
CE
(I =
−100 mAdc, V
= −1.0 Vdc)
30
−
C
CE
Collecto
r
−
E
mitter Saturation Voltage
(I =
−10 mAdc, I
= −1.0 mAdc)
V
Vdc
Vdc
CE(sat)
−
−
−0.25
−0.4
C
B
(I =
−50 mAdc, I
= −5.0 mAdc)
C
B
Bas
e
−
E
mitter Saturation Voltage
(I =
−10 mAdc, I
= −1.0 mAdc)
V
BE(sat)
−0.65
−
−0.85
−0.95
C
B
(I =
−50 mAdc, I
= −5.0 mAdc)
C
B
SMALL
−
S
IGNAL CHARACTERISTICS
Curren
t
−
G
ain − Bandwidth Product
f
MHz
pF
T
(I =
−10 mAdc, V
= −20 Vdc, f = 100 MHz)
250
−
−
C
CE
Output Capacitance
C
obo
(V =
−5.0 Vdc, I
= 0, f = 1.0 MHz)
4.5
10
CB
E
Input Capacitance
C
pF
ibo
(V =
−0.5 Vdc, I
= 0, f = 1.0 MHz)
−
EB
C
Input Impedance
h
k
W
ie
re
fe
(I =
−1.0 mAdc, V
= −10 Vdc, f = 1.0 kHz)
C
2.0
0.1
100
3.0
−
12
CE
−4
Voltage Feedback Ratio
h
h
X 10
−
(I =
−1.0 mAdc, V
= −10 Vdc, f = 1.0 kHz)
C
10
CE
Smal
l
−
S
ignal Current Gain
(I =
−1.0 mAdc, V
= −10 Vdc, f = 1.0 kHz)
C
400
60
CE
Output Admittance
h
oe
m
mhos
dB
(I =
−1.0 mAdc, V
= −10 Vdc, f = 1.0 kHz)
C
CE
Noise Figure
NF
(I =
−100
m
Adc, V
= −5.0 Vdc, R
= 1.0 k
W
, f = 1.0 kHz)
C
4.0
CE
S
SWITCHING CHARACTERISTICS
Delay Time
t
t
−
−
−
−
35
35
d
(V =
−3.0 Vdc, V
= 0.5 Vdc,
CC
BE
ns
ns
I
C
= −10 mAdc, I
= −1.0 mAdc)
B1
Rise Time
t
r
Storage Time
225
75
s
(V =
−3.0 Vdc, I
= −10 mAdc,
CC
C
I
B1
= I
= −1.0 mAdc)
B2
Fall Time
t
f
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse
T
e
st: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
2
MMBT3906L, SMMBT3906L
3 V
3 V
< 1 ns
+9.1 V
275
275
< 1 ns
+0.5 V
10 k
10 k
0
C
< 4 pF*
C <
4 pF*
S
S
1N916
10.6 V
300 ns
10 < t
< 500
m
s
1
t
1
10.9 V
DUTY CYCLE = 2%
DUTY CYCLE = 2%
*
T
o
tal shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
T =
25
°
C
J
T =
125
°
C
J
10
5000
V
CC
I /I
= 10
= 40 V
3000
2000
7.0
C B
C
5.0
obo
1000
700
C
ibo
500
3.0
2.0
300
200
Q
T
Q
A
100
70
1.0
0.1
50
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
40
1.0
2.0 3.0
5.0 7.0
10
20 30
50 70 100
200
REVERSE BIAS (VOLTS)
I ,
COLLECTOR CURRENT (mA)
C
Figure 3. Capacitance
Figure 4. Charge Data
500
500
I /I
= 10
C B
V
= 40 V
CC
300
200
300
200
I =
I
B1 B2
I /I
= 20
C B
100
70
100
70
t @
V =
3.0 V
r CC
50
50
15 V
30
20
30
20
I /I
= 10
C B
40 V
10
10
7
2.0 V
7
5
t @
V =
0 V
OB
d
5
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70
100
200
200
1.0
2.0 3.0
5.0 7.0 10
20 30
50
70 100
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 6. Fall Time
Figure 5. Tur
n
−
O
n Time
3
MMBT3906L, SMMBT3906L
TYPICAL AUDIO SMALL
−
S
IGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(V
CE
=
−
5
.0 Vdc, T
A
= 25
°
C, Bandwidth = 1.0 Hz)
5.0
4.0
3.0
2.0
1.0
0
12
SOURCE RESISTANCE = 200
W
= 1.0 mA
f = 1.0 kHz
I
= 1.0 mA
C
I
C
10
8
I
C
= 0.5 mA
SOURCE RESISTANCE = 200
W
= 0.5 mA
I
C
SOURCE RESISTANCE = 2.0 k
= 50
m
A
6
I
C
4
I
= 50
m
A
C
SOURCE RESISTANCE = 2.0 k
= 100
m
A
I
= 100
m
A
C
2
I
C
0
0.1 0.2
0.4
1.0 2.0 4.0
10
20
40
100
0.1 0.2
0.4
1.0 2.0
4.0
10
20
40
100
f, FREQUENCY (kHz)
R ,
SOURCE RESISTANCE (k OHMS)
g
Figure 7.
Figure 8.
h PARAMETERS
(V
CE
=
−
1
0 Vdc, f = 1.0 kHz, T
A
= 25
°
C)
300
200
100
70
50
30
20
100
70
10
7
50
30
5
0.1
0.2 0.3
0.5 0.7
1.0
2.0 3.0
5.0 7.0 10
0.1
0.2 0.3
0.5 0.7
1.0
2.0 3.0
5.0 7.0
10
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 9. Current Gain
Figure 10. Output Admittance
20
10
10
7.0
5.0
7.0
5.0
3.0
2.0
3.0
2.0
1.0
0.7
0.5
1.0
0.7
0.5
0.3
0.2
0.1
0.2 0.3
0.5 0.7
1.0
2.0 3.0
5.0 7.0 10
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
10
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 11. Input Impedance
Figure 12. Voltage Feedback Ratio
4
MMBT3906L, SMMBT3906L
TYPICAL STATIC CHARACTERISTICS
1000
100
10
V
CE
= 1 V
T =
150
°
C
J
25
°
C
-ꢀ55
°
C
1.0
10
100
1000
I ,
COLLECTOR CURRENT (mA)
C
Figure 13. DC Current Gain
1.0
0.8
0.6
0.4
T =
25
°
C
J
I
C
= 1.0 mA
10 mA
30 mA
100 mA
0.2
0
0.01
0.02
0.03
0.05 0.07 0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
I ,
BASE CURRENT (mA)
B
Figure 14. Collector Saturation Region
5
MMBT3906L, SMMBT3906L
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
1.4
I /I
= 10
C
B
I /I
= 10
C
B
150
°
C
1.2
1.0
0.8
0.6
25
°
C
−55
°
C
−55
°
C
25
°
C
150
°
C
0.10
0.4
0.2
0.05
0
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
1000
100
I ,
COLLECTOR CURRENT (A)
I ,
COLLECTOR CURRENT (A)
C
C
Figure 15. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 16. Base Emitter Saturation Voltage vs.
Collector Current
1.4
1.2
1.0
0.8
0.6
1000
V
CE
= 1 V
V
CE
= 2 V
T =
25
°
C
A
−55
°
C
25
°
C
100
150
°
C
0.4
0.2
10
0.0001
0.001
0.01
0.1
1
0.1
1
10
100
I ,
COLLECTOR CURRENT (A)
I ,
COLLECTOR CURRENT (mA)
C
C
Figure 17. Base Emitter Voltage vs. Collector
Current
Figure 18. Current Gain Bandwidth vs.
Collector Current
1
1.0
0.5
1 ms
10 ms
1 s
100 ms
+25
°
C TO +125
°
C
q
FOR V
CE(sat)
VC
Thermal Limit
0.1
0
-ꢀ55
°
C TO +25
°
C
-ꢀ0.5
-ꢀ1.0
+25
°
C TO +125
°
C
-ꢀ55
°
C TO +25
°
C
0.01
q
FOR V
VB
BE(sat)
-ꢀ1.5
-ꢀ2.0
Single Pulse
T
e
st
@ T
= 25
°
C
A
0.001
0.01
0.1
1
(Vdc)
10
0
20
40
60
80 100
120 140
160 180
200
I ,
COLLECTOR CURRENT (mA)
C
V
CE
Figure 19. Temperature Coefficients
Figure 20. Safe Operating Area
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT
−
23 (TO
−
236)
CASE 318
−
08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
NOTES:
D
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
0.25
3
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
T
H
E
E
1
2
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
°
NOM
1.00
0.06
0.44
0.14
2.90
1.30
1.90
0.43
0.54
2.40
−−−
MAX
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
°
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
°
L
1.11
0.10
0.50
0.20
3.04
1.40
2.04
0.55
0.69
2.64
10
°
3X
b
L1
VIEW C
e
TOP VIEW
L1
A
H
E
T
c
A1
SEE VIEW C
SIDE VIEW
GENERIC
MARKING DIAGRAM*
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT
XXXM
G
G
1
3X
0.90
XXX = Specific Device Code
2.90
M
= Date Code
G
= Pb
−
Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present.
3X
0.95
0.80
PITCH
DIMENSIONS: MILLIMETERS
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
STYLE 7:
PIN 1.
EMITTER
2. BASE
STYLE 8:
PIN 1.
BASE
2. EMITTER
3. COLLECTOR
PIN 1.
ANODE
2. NO
CONNECTION
3. CATHODE
3. COLLECTOR
STYLE 9:
PIN 1.
ANODE
2. ANODE
STYLE 10:
STYLE 11:
STYLE 12:
STYLE 13:
PIN 1.
SOURCE
2. DRAIN
STYLE 14:
PIN 1.
CATHODE
2. GATE
PIN 1.
DRAIN
2. SOURCE
3. GATE
PIN 1.
ANODE
PIN 1.
CATHODE
2. CATHODE
3. ANODE
2. CATHODE
3. CATHODE
−
ANODE
3. CATHODE
3. GATE
3. ANODE
STYLE 15:
STYLE 16:
STYLE 17:
PIN 1.
NO CONNECTION
2. ANODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1.
GATE
2. CATHODE
3. ANODE
PIN 1.
ANODE
2. CATHODE
3. CATHODE
PIN 1.
NO CONNECTION
PIN 1.
CATHODE
PIN 1.
CATHODE
2. ANODE
3. GATE
2. CATHODE
3. ANODE
2. ANODE
3. CATHODE
−
ANODE
3. CATHODE
STYLE 21:
STYLE 22:
STYLE 23:
PIN 1.
ANODE
2. ANODE
STYLE 24:
STYLE 25:
STYLE 26:
PIN 1.
GATE
2. SOURCE
3. DRAIN
PIN 1.
RETURN
2. OUTPUT
3. INPUT
PIN 1.
GATE
2. DRAIN
PIN 1.
ANODE
2. CATHODE
3. GATE
PIN 1.
CATHODE
2. ANODE
3. SOURCE
3. NO
CONNECTION
3. CATHODE
STYLE 27:
STYLE 28:
PIN 1.
CATHODE
2. CATHODE
3. CATHODE
PIN 1.
ANODE
2. ANODE
3. ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT
−
23 (TO
−
236)
PAGE 1 OF 1
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o
ll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
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