onsemi-MMBT3906SL

Part #onsemi-MMBT3906SL
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onsemi-MMBT3906SL
June 2015  
MMBT3906SL  
PNP Epitaxial Silicon Transistor  
Features  
• General-Purpose
 
Amplifier Transistor  
• Ultra
 
Small Surface Mount Package for All Types (Max. 0.43mm
T
a
ll)  
• Suitable
 
for General Switching and Amplification  
• Well
 
Suited for Portable Application  
• As
 
Complementary type, NPN MMBT3904SL is Recommended.  
• Pb
 
Free  
COLLECTOR  
3
C
1
BASE  
E
B
2
Marking : AB  
SOT-923F  
EMITTER  
Ordering Information  
Part Number  
Top Mark  
Package  
Packing Method  
T
a
pe and Reel  
MMBT3906SL  
AB  
SOT-923F 3L  
Absolute Maximum Ratings

(1)  

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-  
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-  
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The  
absolute maximum ratings are stress ratings only. Values are at T

A

= 25°C unless otherwise noted.  
Symbol  
V

CBO  

V

CEO  

V

EBO  

I

C  

Parameter  
Value  
-40  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
-40  
V
-5  
V
-200  
mA  
°
C  
°
C  
T

J  

Junction
T
e
mperature  
150  
T

STG  

Storage
T
e
mperature Range  
-55 to +150  
Note:  
1. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or  
low-duty-cycle operations.  
© 2008 Fairchild Semiconductor Corporation  
MMBT3906SL Rev. 1.4  

Thermal Characteristics  
Values are at T

A

= 25°C unless otherwise noted.  
Symbol  
P

D  

Parameter  
Value  
227  
Unit  
mW  
Power Dissipation, by R

θ
JA  

Derate Above 25
°
C  
1.81  
550  
mW/
°
C  
°
C/W  
R

θ
JA  

Thermal Resistance, Junction-to-Ambient

(2)  

Note:  
2. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.  
Electrical Characteristics

(3)  

Values are at T

A

= 25°C unless otherwise noted.  
Symbol  
BV

CBO

Collector-Base Breakdown Voltage  
BV

CEO

Collector-Emitter Breakdown Voltage
 
I

C

= -1 mA, I

B

= 0  
Parameter  
Conditions  
Min.  
-40  
-40  
-5  
Max.  
Unit  
V
I

C

= -10
μ
A, I

E

= 0  
V
BV

EBO

Emitter-Base Breakdown Voltage  
I

E

= -10
μ
A, I

C

= 0  
V
I

CEX  

Collector Cut-Off Current  
V

CE

= -30
V
, V

EB(OFF)

= -0.3 V  
V

CE

= -1.0 V, I

C

= -0.1 mA  
V

CE

= -1.0 V, I

C

= -1 mA  
V

CE

= -1.0 V, I

C

= -10 mA  
V

CE

= -1.0 V, I

C

= -50 mA  
V

CE

= -1.0 V, I

C

= -100 mA  
I

C

= -10 mA, I

B

= -1.0 mA  
-50  
nA  
60  
80  
h

FE  

DC Current Gain  
100  
60  
300  
30  
-0.25  
-0.40  
-0.85  
-0.95  
V

CE(sat)

Collector-Emitter Saturation Voltage  
V

BE(sat)

Base-Emitter Saturation Voltage  
V
I

C

= -50 mA, I

B

= -5.0 mA  
I

C

= -10 mA, I

B

= -1.0 mA  

C

= -50 mA, I

B

= -5.0 mA  
-0.65  
250  
V
I
V

CE

= -20
V
, I

C

= -10 mA,  
f = 100 MHz  
f

T  

Current Gain-Bandwidth Product  
MHz  
C

ob  

C

ib  

t

d  

Output Capacitance  
Input Capacitance  
Delay Time  
V

CB

= -5
V
, I

E

= 0, f = 1 MHz  
V

EB

= -0.5
V
,
I

C

= 0, f = 1 MHz  
7.0  
15  
pF  
pF  
ns  
ns  
ns  
ns  
35  
t

r  

Rise Time  
35  
V

CC

= -3 V, I

C

= -10 mA,  
I

B1

= -I

B2

= -1 mA  
t

s  

Storage Time  
Fall Time  
225  
75  
t

f  

Note:  
3. DC Item are tested by pulse test: pulse width
≤
300
μ
s, duty cycle
≤
2.0%.  
© 2008 Fairchild Semiconductor Corporation  
MMBT3906SL Rev. 1.4  
2

Typical Performance Characteristics  
1000  
T

J

=125

o

C  
Ic=10*Ib  
T

J

=75

o

C  
Vce=1V  
T

J

=25

o

C  
T

J

=-25

o

C  
100  
T

J

=125

o  

T

J

=75

o

C  
C
T

J

=25

o  

C
C
100  
T

J

=-25

o  

10  
10  
100  
1
10  
100  
Collector Current, [mA]  
Collector Current, [mA]  
Figure 1. DC Current Gain  
Figure 2. Collector-Emitter Saturation Voltage  
100  
Ic=10*Ib  
T

J

=-25

o  

C
T

J

=25

o  

C
1000  
T

J

=125

o  

C
T

J

=75

o  

T

J

=125

o  

C
C
10  
T

J

=75

o

C  
T

J

=25

o

C  
T

J

=-25

o  

C
1
100  
10  
10  
20  
30  
40  
100  
Base-Collector Revere Voltage, [V]  
Collector Current, [mA]  
Figure 3. Base- Emitter Saturation Voltage  
Figure 4. Collector- Base Leakage Current  
12  
300  
250  
200  
150  
100  
50  
f=1mhz  
11  
9
8
6
0
0
25  
50  
75  
100  
125  
150  
0
5
10  
Ambient Temperature, T

a

[

o

C]  
Base- Collector Reverse Voltage, V

cb

[V]  
Figure 5. Collector- Base Capacitance  
Figure 6. Power Derating  
© 2008 Fairchild Semiconductor Corporation  
MMBT3906SL Rev. 1.4  
3

Physical Dimensions  
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Figure 7. 3-LEAD, SOT923
F
,
0
.4 mm TALL, FLAT TERMINAL  
© 2008 Fairchild Semiconductor Corporation  
MMBT3906SL Rev. 1.4  
4

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Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Datasheet contains the design specifications for product development. Specifications may change  
in any manner without notice.  
Advance Information  
Formative / In Design  
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild  
Semiconductor reserves the right to make changes at any time without notice to improve design.  
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Preliminary  
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Rev. I74  
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