onsemi-MMBT3906SL
| Part # | onsemi-MMBT3906SL |
| Download | onsemi-MMBT3906SL |
June 2015
MMBT3906SL
PNP Epitaxial Silicon Transistor
Features
• General-Purpose
Amplifier Transistor
• Ultra
Small Surface Mount Package for All Types (Max. 0.43mm
T
a
ll)
• Suitable
for General Switching and Amplification
• Well
Suited for Portable Application
• As
Complementary type, NPN MMBT3904SL is Recommended.
• Pb
Free
COLLECTOR
3
C
1
BASE
E
B
2
Marking : AB
SOT-923F
EMITTER
Ordering Information
Part Number
Top Mark
Package
Packing Method
T
a
pe and Reel
MMBT3906SL
AB
SOT-923F 3L
Absolute Maximum Ratings
(1)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Value
-40
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
-40
V
-5
V
-200
mA
°
C
°
C
T
J
Junction
T
e
mperature
150
T
STG
Storage
T
e
mperature Range
-55 to +150
Note:
1. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
© 2008 Fairchild Semiconductor Corporation
MMBT3906SL Rev. 1.4
Thermal Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Symbol
P
D
Parameter
Value
227
Unit
mW
Power Dissipation, by R
θ
JA
Derate Above 25
°
C
1.81
550
mW/
°
C
°
C/W
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(2)
Note:
2. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
(3)
Values are at T
A
= 25°C unless otherwise noted.
Symbol
BV
CBO
Collector-Base Breakdown Voltage
BV
CEO
Collector-Emitter Breakdown Voltage
I
C
= -1 mA, I
B
= 0
Parameter
Conditions
Min.
-40
-40
-5
Max.
Unit
V
I
C
= -10
μ
A, I
E
= 0
V
BV
EBO
Emitter-Base Breakdown Voltage
I
E
= -10
μ
A, I
C
= 0
V
I
CEX
Collector Cut-Off Current
V
CE
= -30
V
, V
EB(OFF)
= -0.3 V
V
CE
= -1.0 V, I
C
= -0.1 mA
V
CE
= -1.0 V, I
C
= -1 mA
V
CE
= -1.0 V, I
C
= -10 mA
V
CE
= -1.0 V, I
C
= -50 mA
V
CE
= -1.0 V, I
C
= -100 mA
I
C
= -10 mA, I
B
= -1.0 mA
-50
nA
60
80
h
FE
DC Current Gain
100
60
300
30
-0.25
-0.40
-0.85
-0.95
V
CE(sat)
Collector-Emitter Saturation Voltage
V
BE(sat)
Base-Emitter Saturation Voltage
V
I
C
= -50 mA, I
B
= -5.0 mA
I
C
= -10 mA, I
B
= -1.0 mA
C
= -50 mA, I
B
= -5.0 mA
-0.65
250
V
I
V
CE
= -20
V
, I
C
= -10 mA,
f = 100 MHz
f
T
Current Gain-Bandwidth Product
MHz
C
ob
C
ib
t
d
Output Capacitance
Input Capacitance
Delay Time
V
CB
= -5
V
, I
E
= 0, f = 1 MHz
V
EB
= -0.5
V
,
I
C
= 0, f = 1 MHz
7.0
15
pF
pF
ns
ns
ns
ns
35
t
r
Rise Time
35
V
CC
= -3 V, I
C
= -10 mA,
I
B1
= -I
B2
= -1 mA
t
s
Storage Time
Fall Time
225
75
t
f
Note:
3. DC Item are tested by pulse test: pulse width
≤
300
μ
s, duty cycle
≤
2.0%.
© 2008 Fairchild Semiconductor Corporation
MMBT3906SL Rev. 1.4
2
Typical Performance Characteristics
1000
T
J
=125
o
C
Ic=10*Ib
T
J
=75
o
C
Vce=1V
T
J
=25
o
C
T
J
=-25
o
C
100
T
J
=125
o
T
J
=75
o
C
C
T
J
=25
o
C
C
100
T
J
=-25
o
10
10
100
1
10
100
Collector Current, [mA]
Collector Current, [mA]
Figure 1. DC Current Gain
Figure 2. Collector-Emitter Saturation Voltage
100
Ic=10*Ib
T
J
=-25
o
C
T
J
=25
o
C
1000
T
J
=125
o
C
T
J
=75
o
T
J
=125
o
C
C
10
T
J
=75
o
C
T
J
=25
o
C
T
J
=-25
o
C
1
100
10
10
20
30
40
100
Base-Collector Revere Voltage, [V]
Collector Current, [mA]
Figure 3. Base- Emitter Saturation Voltage
Figure 4. Collector- Base Leakage Current
12
300
250
200
150
100
50
f=1mhz
11
9
8
6
0
0
25
50
75
100
125
150
0
5
10
Ambient Temperature, T
a
[
o
C]
Base- Collector Reverse Voltage, V
cb
[V]
Figure 5. Collector- Base Capacitance
Figure 6. Power Derating
© 2008 Fairchild Semiconductor Corporation
MMBT3906SL Rev. 1.4
3
Physical Dimensions
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Figure 7. 3-LEAD, SOT923
F
,
0
.4 mm TALL, FLAT TERMINAL
© 2008 Fairchild Semiconductor Corporation
MMBT3906SL Rev. 1.4
4
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Datasheet contains the design specifications for product development. Specifications may change
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Rev. I74
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