onsemi-MMBT4126LT1G
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MMBT4126LT1G
General Purpose
T
r
ansistor
PNP Silicon
Features
•
Moisture Sensitivity Level: 1
•
ESD Rating: − Human Body Model: > 4000 V
− Machine Model: > 400 V
COLLECTOR
3
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
BASE
MAXIMUM RATINGS
2
EMITTER
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
V
V
V
−25
Vdc
CEO
Collector−Base Voltage
−25
−4
Vdc
Vdc
CBO
EBO
3
Emitter−Base Voltage
1
Collector Current−Continuous
THERMAL CHARACTERISTICS
Characteristic
I
−200
mAdc
C
2
SOT−23
CASE 318
STYLE 6
Symbol
Max
Unit
T
o
tal Device Dissipation FR
−
5
B
oard
P
D
225
1.8
mW
mW/
°
C
A
Derate above 25
°
C
MARKING DIAGRAM
Thermal Resistance, Junction−to−Ambient
R
556
°
C/W
q
JA
T
o
tal Device Dissipation Alumina
P
D
300
2.4
mW
mW/
°
C
A
C3 M
G
G
Thermal Resistance, Junction−to−Ambient
R
417
°
C/W
q
JA
Junction and Storage
T
e
mperature Range
T , T
−55 to +150
°
C
J
stg
C3 =
Device Code
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR
−
5
=
1
.0
ꢀ
0.75
ꢀ
0.062 in.
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
2. Alumina
= 0.4
ꢀ
0.3
ꢀ
0.024 in. 99.5% alumina.
ORDERING INFORMATION
†
Device
Package
Shipping
MMBT4126
L
T
1G SOT−23
(Pb−Free)
3000/
T
a
pe & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
October, 2016 − Rev. 3
MMBT4126
L
T
1/D
MMBT4126LT1G
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
V
Vdc
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
(I =
−1.0 mAdc, I
= 0)
−25
−25
−4
−
−
C
B
Collector−Base Breakdown Voltage
V
V
(I =
−10
m
Adc, I
= 0)
C
E
Emitter−Base Breakdown Voltage
Vdc
(I =
−10
m
Adc, I
= 0)
−
E
C
Collector Cutoff Current
I
nAdc
CEX
(V =
−30 Vdc, V
= −3.0 Vdc)
−
−50
CE
EB
DC Current Gain
H
−
FE
(I =
−2.0 mAdc, V
= −1.0 Vdc)
120
60
300
−
C
CE
(I =
−50 mAdc, V
= −1.0 Vdc)
C
CE
Collecto
r
−
E
mitter Saturation Voltage
(I =
−50 mAdc, I
= −5.0 mAdc)
V
Vdc
Vdc
CE(sat)
−
−
−0.4
C
B
Bas
e
−
E
mitter Saturation Voltage
(I =
−50 mAdc, I
= −5.0 mAdc)
V
BE(sat)
−0.95
C
B
SMALL
−
S
IGNAL CHARACTERISTICS
Curren
t
−
G
ain − Bandwidth Product
f
MHz
pF
pF
−
T
(I =
−10 mAdc, V
= −20 Vdc, f = 100 MHz)
250
−
−
C
CE
Output Capacitance
C
obo
(V =
−5.0 Vdc, I
= 0, f = 1.0 MHz)
4.5
10
CB
E
Input Capacitance
C
ibo
(V =
−0.5 Vdc, I
= 0, f = 1.0 MHz)
−
EB
C
Smal
l
−
S
ignal Current Gain
(I =
−2.0 mAdc, V
= −10 Vdc, f = 1.0 kHz)
h
fe
120
2.5
480
−
C
CE
(I =
10 mAdc, V
= 20 Vdc, f = 100 MHz)
C
CE
Noise Figure
NF
dB
(I =
−100
m
Adc, V
= −5.0 Vdc, R
= 1.0 k
W
, f = 1.0 kHz)
C
−
4.0
CE
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse
T
e
st: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
TYPICAL TRANSIENT CHARACTERISTICS
T =
25
°
C
J
T =
125
°
C
J
10
5000
V
CC
I /I
= 10
= 40 V
3000
2000
7.0
C
B
C
5.0
obo
1000
700
C
ibo
500
3.0
2.0
300
200
Q
T
Q
A
100
70
1.0
0.1
50
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
40
1.0
2.0 3.0
5.0 7.0
10
20 30
50 70 100
200
REVERSE BIAS (VOLTS)
I ,
COLLECTOR CURRENT (mA)
C
Figure 1. Capacitance
Figure 2. Charge Data
2
MMBT4126LT1G
TYPICAL AUDIO SMALL
−
S
IGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(V
CE
=
−
5
.0 Vdc, T
A
= 25
°
C, Bandwidth = 1.0 Hz)
5.0
4.0
3.0
2.0
1.0
0
12
SOURCE RESISTANCE = 200
W
= 1.0 mA
f = 1.0 kHz
I
= 1.0 mA
C
I
C
10
8
I
C
= 0.5 mA
SOURCE RESISTANCE = 200
W
= 0.5 mA
I
C
SOURCE RESISTANCE = 2.0 k
= 50
m
A
6
I
C
4
I
= 50
m
A
C
SOURCE RESISTANCE = 2.0 k
= 100
m
A
I
= 100
m
A
C
2
I
C
0
0.1 0.2
0.4
1.0 2.0 4.0
10
20
40
100
0.1 0.2
0.4
1.0 2.0
4.0
10
20
40
100
f, FREQUENCY (kHz)
R ,
SOURCE RESISTANCE (k OHMS)
g
Figure 3.
Figure 4.
h PARAMETERS
(V
CE
=
−
1
0 Vdc, f = 1.0 kHz, T
A
= 25
°
C)
300
200
100
70
50
30
20
100
70
10
7
50
30
5
0.1
0.2 0.3
0.5 0.7
1.0
2.0 3.0
5.0 7.0 10
0.1
0.2 0.3
0.5 0.7
1.0
2.0 3.0
5.0 7.0
10
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 5. Current Gain
Figure 6. Output Admittance
20
10
10
7.0
5.0
7.0
5.0
3.0
2.0
3.0
2.0
1.0
0.7
0.5
1.0
0.7
0.5
0.3
0.2
0.1
0.2 0.3
0.5 0.7
1.0
2.0 3.0
5.0 7.0 10
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
10
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 7. Input Impedance
Figure 8. Voltage Feedback Ratio
3
MMBT4126LT1G
TYPICAL STATIC CHARACTERISTICS
2.0
1.0
T =
+125
°
C
J
V
CE
= 1.0 V
+25
°
C
-ꢀ55
°
C
0.7
0.5
0.3
0.2
0.1
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
20
30
50
70 100
200
I ,
COLLECTOR CURRENT (mA)
C
Figure 9. DC Current Gain
1.0
0.8
0.6
0.4
T =
25
°
C
J
I
C
= 1.0 mA
10 mA
30 mA
100 mA
0.2
0
0.01
0.02
0.03
0.05 0.07 0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
I ,
BASE CURRENT (mA)
B
Figure 10. Collector Saturation Region
1.0
0.8
0.6
1.0
T =
25
°
C
V
@ I
/I =
10
J
BE(sat) C
B
0.5
+25
°
C TO +125
°
C
-ꢀ55
°
C TO +25
°
C
q
FOR V
CE(sat)
VC
V
BE
@ V
= 1.0 V
CE
0
-ꢀ0.5
-ꢀ1.0
+25
°
C TO +125
°
C
-ꢀ55
°
C TO +25
°
C
0.4
0.2
0
V
@ I
/I =
10
B
CE(sat)
C
q
FOR V
BE(sat)
VB
-ꢀ1.5
-ꢀ2.0
1.0
2.0 5.0
10
20
50
100
200
0
20
40
60
80 100
120 140
160 180
200
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 11. “ON” Voltages
Figure 12. Temperature Coefficients
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT
−
23 (TO
−
236)
CASE 318
−
08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
NOTES:
D
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
0.25
3
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
T
H
E
E
1
2
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
°
NOM
1.00
0.06
0.44
0.14
2.90
1.30
1.90
0.43
0.54
2.40
−−−
MAX
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
°
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
°
L
1.11
0.10
0.50
0.20
3.04
1.40
2.04
0.55
0.69
2.64
10
°
3X
b
L1
VIEW C
e
TOP VIEW
L1
A
H
E
T
c
A1
SEE VIEW C
SIDE VIEW
GENERIC
MARKING DIAGRAM*
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT
XXXM
G
G
1
3X
0.90
XXX = Specific Device Code
2.90
M
= Date Code
G
= Pb
−
Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present.
3X
0.95
0.80
PITCH
DIMENSIONS: MILLIMETERS
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
STYLE 7:
PIN 1.
EMITTER
2. BASE
STYLE 8:
PIN 1.
BASE
2. EMITTER
3. COLLECTOR
PIN 1.
ANODE
2. NO
CONNECTION
3. CATHODE
3. COLLECTOR
STYLE 9:
PIN 1.
ANODE
2. ANODE
STYLE 10:
STYLE 11:
STYLE 12:
STYLE 13:
PIN 1.
SOURCE
2. DRAIN
STYLE 14:
PIN 1.
CATHODE
2. GATE
PIN 1.
DRAIN
2. SOURCE
3. GATE
PIN 1.
ANODE
PIN 1.
CATHODE
2. CATHODE
3. ANODE
2. CATHODE
3. CATHODE
−
ANODE
3. CATHODE
3. GATE
3. ANODE
STYLE 15:
STYLE 16:
STYLE 17:
PIN 1.
NO CONNECTION
2. ANODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1.
GATE
2. CATHODE
3. ANODE
PIN 1.
ANODE
2. CATHODE
3. CATHODE
PIN 1.
NO CONNECTION
PIN 1.
CATHODE
PIN 1.
CATHODE
2. ANODE
3. GATE
2. CATHODE
3. ANODE
2. ANODE
3. CATHODE
−
ANODE
3. CATHODE
STYLE 21:
STYLE 22:
STYLE 23:
PIN 1.
ANODE
2. ANODE
STYLE 24:
STYLE 25:
STYLE 26:
PIN 1.
GATE
2. SOURCE
3. DRAIN
PIN 1.
RETURN
2. OUTPUT
3. INPUT
PIN 1.
GATE
2. DRAIN
PIN 1.
ANODE
2. CATHODE
3. GATE
PIN 1.
CATHODE
2. ANODE
3. SOURCE
3. NO
CONNECTION
3. CATHODE
STYLE 27:
STYLE 28:
PIN 1.
CATHODE
2. CATHODE
3. CATHODE
PIN 1.
ANODE
2. ANODE
3. ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT
−
23 (TO
−
236)
PAGE 1 OF 1
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