onsemi-MMBT4401K
| Part # | onsemi-MMBT4401K |
Download  | onsemi-MMBT4401K |
November 2006
MMBT4401K
NPN Epitaxial Silicon Transistor
tm
Switching Transistor
Marking
3
2XK
2
SOT-23
1
1. Base
2. Emitter
3. Collector
Absolute Maximum Ratings
T
a
= 25°C unless otherwise noted
Symbol
Parameter
Value
Units
V
V
CBO
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
60
40
V
CEO
V
EBO
I
C
V
6
V
600
mA
mW
°
C
P
C
Collector Dissipation
350
T
J,
T
STG
Operating Junction and Storage
T
e
mperature Range
-55 ~ 150
Electrical Characteristics
T
a
=25
°
C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
BEV
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage *
Emitter-Base Breakdown Voltage
Base Cut-off Current
Test Condition
Min.
Max.
Units
I
C
= 100
µ
A, I
E
= 0
60
40
6
V
V
I
C
= 1.0mA, I
B
= 0
I
E
= 100
µ
A, I
C
= 0
V
V
CE
= 35V, V
EB
= 0.4V
V
CE
= 35V, V
EB
= 0.4V
100
100
nA
nA
I
CEX
Collector Cut-off Current
h
FE
DC Current Gain *
V
CE
= 1
V
,
I
C
= 0.1mA
V
CE
= 1V, I
C
= 1mA
V
CE
= 1V, I
C
= 10mA
V
CE
= 1V, I
C
= 150mA
V
CE
= 2V, I
C
= 500mA
20
40
80
100
40
300
V
CE
(sat)
V
BE
(sat)
Collector-Emitter Saturation Voltage *
Base-Emitter Saturation Voltage *
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
0.4
0.75
V
V
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
0.75
250
0.95
1.2
V
V
f
T
Current Gain Bandwidth Product
Output Capacitance
I
C
= 20mA, V
CE
= 10
V
, f =
1
00MHz
V
CB
=5
V
, I
E
=0, f=100KHz
MHz
pF
C
ob
t
ON
6.5
35
Turn On Time
V
CC
= 30
V
,
V
BE
= 2V
ns
I
C
= 150mA, I
B1
= 15mA
t
OFF
Turn Off Time
V
CC
= 30
V
,
I
C
= 150mA
I
B1
= I
B2
= 15mA
255
ns
* Pulse
T
e
st: Pulse Width
≤
300
µ
s, Duty Cycle
≤
2%
©2006 Fairchild Semiconductor Corporation
MMBT4401K Rev. C
1
Typical Performance Characteristics
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
400
125
o
C
Vce=5V
Ic=10Ib
0.4
350
300
250
200
150
100
o
C
0.3
75
o
C
50
o
C
0.2
25
o
C
25
o
C
125
o
C
75
o
C 100
o
C
50
o
C
0
o
C
0
o
C
100
50
0
0.1
0.0
1
10
100
1
10
100
Collector Current, [mA]
Collector Current, [mA]
Figure 3. Base-Emitter Saturation Voltage
Figure 4. Collector – Base Leakage Current
1.0
Ic=10Ib
0.9
50
o
C
V
CB
= 40V
25
o
C
0
o
C
0.8
10
0.7
0.6
125
o
C
100
o
C
0.5
75
o
C
0.4
1
0.3
25
50
75
100
125
150
1
10
100
Temperature, [‘C]
Collector Current, [mA]
Figure 5. Collector-Base Capacitance
Figure 6. Power Dissipation vs
Ambient Temperature
0.4
0.3
0.2
0.1
0.0
I
E
= 0
f =
1
00KHz
10
1
1
10
100
0
25
50
75
100
125
150
Temperature, [
O
C]
V
C
B
[V], Collector-Base Voltage
2
MMBT4401K Rev. C
Mechanical Dimensions
SOT-23
0.40
0.03
0.03~0.10
0.38 REF
+0.05
–0.023
0.40
0.03
0.12
0.96~1.14
2.90
0.10
0.95
0.03
0.95
0.03
1.90
0.03
0.508REF
Dimensions in Millimeters
3
MMBT4401K Rev. C
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to
be an exhaustive list of all such trademarks.
®
®
OCX™
OCXPro™
OPTOLOGIC
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
PowerSaver™
ACEx™
FACT Quiet Series™
GlobalOptoisolator™
GTO™
SILENT SWITCHER
SMART START™
SPM™
UltraFET
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT
™
DOME™
UniFET™
VCX™
®
HiSeC™
Stealth™
Wire™
2
I C™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TCM™
TinyBoost™
TinyBuck™
i-Lo
™
ImpliedDisconnect™
IntelliMAX™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
EcoSPARK™
2
E CMOS™
®
PowerTrench
EnSigna™
FACT™
®
QFET
®
QS™
FAST
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
µ
SerDes™
FASTr™
FPS™
FRFET™
TinyPWM™
TinyPower™
®
TinyLogic
TINYOPTO™
TruTranslation™
UHC™
Across the board. Around the world.™
The Power Franchise
®
ScalarPump™
Programmable Active Droop™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO
IMPROVE RELIABILIT
Y
,
F
UNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE
OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE
RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPE-
CIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT
THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body, or (b) support or sustain life, or
(c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably expected
to result in significant injury to the user.
2. A critical component is any component of a life support device or system
whose failure to perform can be reasonably expected to cause the failure
of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Definition
Formative or In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I20
4
MMBT4401K Rev. C
