onsemi-MMBT4401LT1G
| Part # | onsemi-MMBT4401LT1G |
Download  | onsemi-MMBT4401LT1G |
MMBT4401L, SMMBT4401L
Switching
T
r
ansistor
NPN Silicon
Features
•
These Devices are Pb
−
Free, Halogen Free/BFR Free and are RoHS
Compliant
COLLECTOR
3
•
AEC
−
Q101 Qualified and P
P
A
P Capable
•
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
1
BASE
MAXIMUM RATINGS
2
Rating
Collecto
r
−
Emitter Voltage
Collecto
r
−
Base Voltage
Emitte
r
−
Base Voltage
Symbol
Value
40
Unit
Vdc
EMITTER
V
CEO
V
CBO
V
EBO
60
Vdc
3
6.0
Vdc
SOT
−
23 (TO
−
236)
CASE 318
STYLE 6
Collector Current
−
Continuous
Collector Current
−
Peak
I
C
600
900
mAdc
mAdc
1
2
I
CM
THERMAL CHARACTERISTICS
Characteristic
MARKING DIAGRAM
Symbol
Max
Unit
T
o
tal Device Dissipation FR
−
5 Board
P
D
(Note 1) @T
= 25
°
C
225
1.8
mW
mW/
°
C
A
2X M
G
Derate above 25
°
C
G
Thermal Resistance, Junction
−
to
−
Ambient
R
556
°
C/W
q
JA
1
T
o
tal Device Dissipation Alumina
P
D
2X =
Specific Device Code
Substrate (Note 2) @T
= 25
°
C
300
2.4
mW
mW/
°
C
A
Derate above 25
°
C
M
= Date Code*
G
= Pb
−
Free Package
(Note: Microdot may be in either location)
Thermal Resistance, Junction
−
to
−
Ambient
Junction and Storage
T
e
mperature
R
417
°
C/W
°
C
q
JA
T , T
J
−
55 to +150
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*Transient pulses must not cause the junction temperature to be exceeded.
1. FR
−
5 = 1.0
ꢀ
0.75
ꢀ
0.062 in.
ORDERING INFORMATION
2. Alumina
= 0.4
ꢀ
0.3
ꢀ
0.024 in. 99.5% alumina.
†
Device
Package
Shipping
MMBT4401
L
T
1G
SMMBT4401
L
T
1G
SOT
−
23
(Pb
−
Free)
3000 /
T
a
pe &
Reel
MMBT4401
L
T
3G
SOT
−
23
(Pb
−
Free)
10,000 /
T
a
pe &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
October, 2011
−
Rev. 10
MMBT4401
L
T
1/D
MMBT4401L, SMMBT4401L
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collecto
r
−
Emitter Breakdown Voltage (Note 3)
Collecto
r
−
Base Breakdown Voltage
Emitte
r
−
Base Breakdown Voltage
Base Cutoff Current
(I =
1.0 mAdc, I
= 0)
V
40
60
6.0
−
−
−
Vdc
Vdc
C
B
(BR)CEO
(BR)CBO
(BR)EBO
(I =
0.1 mAdc, I
= 0)
V
V
C
E
(I =
0.1 mAdc, I
= 0)
−
Vdc
E
C
(V =
35 Vdc, V
= 0.4 Vdc)
I
0.1
0.1
m
Adc
m
Adc
CE
EB
BEV
Collector Cutoff Current
(V =
35 Vdc, V
= 0.4 Vdc)
I
−
CE
EB
CEX
ON CHARACTERISTICS
(Note 3)
DC Current Gain
h
FE
(I =
0.1 mAdc, V
= 1.0 Vdc)
20
40
−
−
−
C
CE
(I =
1.0 mAdc, V
= 1.0 Vdc)
C
CE
(I =
10 mAdc, V
= 1.0 Vdc)
80
−
C
CE
(I =
150 mAdc, V
= 1.0 Vdc)
100
40
300
−
C
CE
(I =
500 mAdc, V
= 2.0 Vdc)
C
CE
Collecto
r
−
Emitter Saturation Voltage
Bas
e
−
Emitter Saturation Voltage
V
Vdc
Vdc
CE(sat)
(I =
150 mAdc, I
= 15 mAdc)
−
−
0.4
C
B
(I =
500 mAdc, I
= 50 mAdc)
0.75
C
B
V
BE(sat)
(I =
150 mAdc, I
= 15 mAdc)
0.75
−
0.95
1.2
C
B
(I =
500 mAdc, I
= 50 mAdc)
C
B
SMALL
−
SIGNAL CHARACTERISTICS
Curren
t
−
Gain
−
Bandwidth Product
Collector
−
Base Capacitance
Emitter
−
Base Capacitance
Input Impedance
(I =
20 mAdc, V
= 10 Vdc, f = 100 MHz)
f
T
250
−
−
MHz
pF
C
CE
(V =
5.0 Vdc, I
= 0, f = 1.0 MHz)
C
cb
C
eb
6.5
30
CB
E
(V =
0.5 Vdc, I
= 0, f = 1.0 MHz)
−
pF
EB
C
(I =
1.0 mAdc, V
= 10 Vdc, f = 1.0 kHz)
h
1.0
0.1
40
1.0
15
k
W
C
CE
ie
re
fe
−
4
Voltage Feedback Ratio
Smal
l
−
Signal Current Gain
Output Admittance
(I =
1.0 mAdc, V
= 10 Vdc, f = 1.0 kHz)
h
h
8.0
500
30
X 10
−
C
CE
(I =
1.0 mAdc, V
= 10 Vdc, f = 1.0 kHz)
C
CE
(I =
1.0 mAdc, V
= 10 Vdc, f = 1.0 kHz)
h
oe
m
mhos
C
CE
SWITCHING CHARACTERISTICS
Delay Time
t
−
−
−
−
15
20
d
(V =
30 Vdc, V
= 2.0 Vdc,
CC
EB
ns
ns
I
= 150 mAdc, I
= 15 mAdc)
C
B1
Rise Time
t
r
Storage Time
t
225
30
s
(V =
30 Vdc, I
= 150 mAdc,
CC
C
I
B1
= I
= 15 mAdc)
B2
Fall Time
t
f
3. Pulse
T
e
st: Pulse Width
≤
300
m
s, Duty Cycle
≤
2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+ꢀ30 V
200
W
+ꢀ30 V
1.0 to 100
m
s,
1.0 to 100
m
s,
200
W
+16 V
DUTY CYCLE
≈
2.0%
+16 V
0
DUTY CYCLE
≈
2.0%
0
1.0 k
W
-14 V
1.0 k
W
C *
< 10 pF
S
-ꢀ2.0 V
C *
< 10 pF
S
< 20 ns
< 2.0 ns
-ꢀ4.0 V
Scope rise time < 4.0 ns
*
T
o
tal shunt capacitance of test jig connectors, and oscilloscope
Figure 1. Turn
−
On Time
Figure 2. Turn
−
Off Time
2
MMBT4401L, SMMBT4401L
TRANSIENT CHARACTERISTICS
25
°
C
100
°
C
10
7.0
V
= 30 V
CC
I /I
= 10
5.0
C B
3.0
2.0
Q
T
1.0
0.7
0.5
0.3
0.2
Q
A
0.1
10
20
30
50 70 100
200 300
500
I ,
COLLECTOR CURRENT (mA)
C
Figure 3. Charge Data
100
70
100
I /I
= 10
C B
V
= 30 V
70
50
CC
I /I
= 10
t
r
C B
50
t @
V =
30 V
r
CC
t @
V =
10 V
30
20
30
20
t
f
r
CC
t @
V =
2.0 V
d
EB
t @
V =
0
d
EB
10
7.0
5.0
10
7.0
5.0
10
20
30
50 70
100
200 300
500
10
20
30
50 70
100
200
300
500
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 4. Turn
−
On Time
Figure 5. Rise and Fall Times
300
200
100
70
t
′
= t
– 1/8 t
f
s
s
V
I
= 30 V
CC
I
= I
B1 B2
I /I
= 10 to 20
= I
B1 B2
C B
50
I /I
= 20
C B
30
20
100
70
I /I
= 10
C B
10
50
7.0
5.0
30
10
20
30
50 70
100
200 300
500
10
20
30
50 70
100
200 300
500
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 6. Storage Time
Figure 7. Fall Time
3
MMBT4401L, SMMBT4401L
SMALL
−
SIGNAL CHARACTERISTICS
NOISE FIGURE
V
CE
= 10 Vdc, T
A
= 25
°
C; Bandwidth = 1.0 Hz
10
8.0
6.0
10
I =
1.0 mA, R
= 150
W
S
f = 1.0 kHz
C
I =
500
m
A, R
= 200
W
C S
R =
OPTIMUM
S
RS =
SOURCE
8.0
6.0
I =
100
m
A, R
= 2.0 k
W
C S
I =
50
m
A
C
I =
50
m
A, R
= 4.0 k
W
C S
RS =
RESISTANCE
I =
100
m
A
C
I =
500
m
A
C
I =
1.0 mA
C
4.0
4.0
2.0
0
2.0
0
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0 5.0
10 20
f, FREQUENCY (kHz)
50 100
50 100
200
500 1.0ꢁk
2.0ꢁk 5.0ꢁk
10ꢁk 20ꢁk
50ꢁk 100ꢁk
R ,
SOURCE RESISTANCE (OHMS)
S
Figure 8. Frequency Effects
Figure 9. Source Resistance Effects
h PARAMETERS
= 10 Vdc, f = 1.0 kHz, T
= 25
°
C
V
CE
A
This group of graphs illustrates the relationship between h
and other “h” parameters for this series of transistors. To obtain
fe
these curves, a high
−
gain and a low
−
gain unit were selected from the MMBT4401LT1 lines, and the same units were used to
develop the correspondingly numbered curves on each graph.
50ꢁk
MMBT4401LT1 UNIT 1
MMBT4401LT1 UNIT 2
20ꢁk
10ꢁk
5.0ꢁk
2.0ꢁk
1.0ꢁk
500
0.1
0.2 0.3
0.5 0.7
1.0
2.0 3.0
5.0 7.0 10
I ,
COLLECTOR CURRENT (mA)
C
Figure 10. Input Impedance
100
10
7.0
5.0
50
MMBT4401LT1 UNIT 1
MMBT4401LT1 UNIT 2
3.0
2.0
20
10
1.0
0.7
0.5
MMBT4401LT1 UNIT 1
MMBT4401LT1 UNIT 2
5.0
2.0
1.0
0.3
0.2
0.1
0.2 0.3
0.5 0.7
1.0
2.0 3.0
5.0 7.0
10
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 11. Voltage Feedback Ratio
Figure 12. Output Admittance
4
MMBT4401L, SMMBT4401L
STATIC CHARACTERISTICS
500
450
400
350
300
250
200
150
100
V
CE
V
CE
V
CE
= 5.0 V
= 2.0 V
= 1.0 V
T =
150
°
C
J
25
°
C
-ꢀ55
°
C
50
0
0.01
0.1
1
I ,
COLLECTOR CURRENT (A)
C
Figure 13. DC Current Gain
1.2
1.0
0.8
0.6
0.4
0.2
0
100 mA
I =
1.0 mA
C
500 mA
10 mA
300 mA
0.001
0.01
0.1
1
10
100
I ,
BASE CURRENT (mA)
B
Figure 14. Collector Saturation Region
0.35
0.30
0.25
0.20
+ꢀ0.5
0
I /I
= 10
C B
q
for V
CE(sat)
VC
-ꢀ0.5
150
°
C
-ꢀ1.0
0.15
0.10
25
°
C
-ꢀ1.5
-ꢀ2.0
-ꢀ2.5
-55
°
C
q
for V
BE
0.05
0
VB
0.0001
0.001
0.01
0.1
1
0.1 0.2
0.5 1.0 2.0
5.0 10 20
50 100
200 500
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 15. Collector
−
Emitter Saturation
Figure 16. Temperature Coefficients
Voltage vs. Collector Current
5
MMBT4401L, SMMBT4401L
STATIC CHARACTERISTICS
1.1
1.0
0.9
0.8
0.7
0.6
0.5
1.0
I /I
= 10
C
B
V
CE
= 2.0 V
0.9
0.8
0.7
0.6
0.5
−
55
°
C
−
55
°
C
25
°
C
25
°
C
150
°
C
0.4
0.3
0.4
0.3
150
°
C
0.0001
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 17. Base
−
Emitter Saturation Voltage vs.
Figure 18. Base
−
Emitter Turn On Voltage vs.
Collector Current
Collector Current
21
8.5
7.5
6.5
5.5
4.5
3.5
19
17
15
13
11
9
2.5
1.5
0
1
2
3
4
5
6
0
5
10 15 20 25 30 35 40 45 50
V ,
COLLECTOR BASE VOLTAGE (V)
cb
V
eb
, EMITTER BASE VOLTAGE (V)
Figure 19. Input Capacitance vs. Emitter Base
Voltage
Figure 20. Output Capacitance vs. Collector
Base Voltage
1000
100
10
1
V
= 1.0 V
CE
10 msec
T =
25
°
C
A
1 sec
0.1
0.01
0.001
1
10
100
0.1
1
10
100
1000
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
I ,
COLLECTOR CURRENT (mA)
C
Figure 21. Safe Operating Area
Figure 22. Current
−
Gain
−
Bandwidth Product
6
MMBT4401L, SMMBT4401L
PACKAGE DIMENSIONS
SOT
−
23 (TO
−
236)
CASE 318
−
08
ISSUE AP
NOTES:
1. DIMENSIONING
AND TOLERANCING PER ANSI Y14.5M,
1982.
D
2. CONTROLLING
DIMENSION: INCH.
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
SEE VIEW C
3
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
H
E
MILLIMETERS
INCHES
E
DIM
A
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
MAX
MIN
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
c
A1
b
c
D
E
e
L
L1
1
2
b
0.25
e
q
H
q
2.10
0
°
2.40
−−−
2.64
10
°
0.083
0
°
0.094
−−−
0.104
10
°
A
E
L
STYLE 6:
PIN 1.
BASE
A1
L1
VIEW C
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
mm
inches
ǒ
Ǔ
SCALE 10:1
0.8
0.031
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC).
SCILLC reserves the right to make changes without further notice
to any products herein.
SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time.
All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
SCILLC does not convey any license under its patent rights
nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.
Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.
SCILLC is an Equal
Opportunity/Affirmative Action Employer.
This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
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−
282
−
9855
T
o
ll Free
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−
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.
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675
−
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o
ll Free USA/Canada
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−
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o
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For additional information, please contact your local
Sales Representative
MMBT4401LT1/D
