onsemi-MMBT4401WT1G
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MMBT4401WT1G
Switching
T
r
ansistor
NPN Silicon
Features
•
Moisture Sensitivity Level: 1
•
ESD Rating:
Human Body Model; 4 k
V
,
Machine Model; 400 V
COLLECTOR
3
•
These Devices are Pb
−
Free, Halogen Free/BFR Free and are RoHS
Compliant
1
BASE
MAXIMUM RATINGS
2
EMITTER
Rating
Symbol
Value
40
Unit
Vdc
Collector
−
Emitter Voltage
Collector
−
Base Voltage
V
CEO
V
CBO
60
Vdc
3
Emitter
−
Base Voltage
V
EBO
6.0
Vdc
Collector Current
−
Continuous
THERMAL CHARACTERISTICS
Characteristic
I
600
mAdc
C
1
2
SC
−
70 (SOT
−
323)
CASE 419
Symbol
Max
Unit
STYLE 3
T
o
tal Device Dissipation FR
−
5 Board
P
D
150
mW
T =
25
°
C
A
Thermal Resistance,
Junction
−
to
−
Ambient
R
833
°
C/W
°
C
q
JA
MARKING DIAGRAM
Junction and Storage
T
e
mperature
T , T
J
−
55 to +150
stg
2X M
G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommende
d
O
perating Conditions may affect device reliability.
G
1
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon
manufacturin
g
l
ocation.
ORDERING INFORMATION
†
Device
Package
Shipping
MMBT4401WT1G
SC
−
70
3000 /
T
a
pe & Reel
(Pb
−
Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
August, 2013
−
Rev. 4
MMBT4401WT1/D
MMBT4401WT1G
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
V
40
60
6.0
−
−
−
Vdc
Vdc
C
B
(BR)CEO
(BR)CBO
(BR)EBO
Collector
−
Base Breakdown Voltage (I
= 0.1 mAdc, I
= 0)
V
V
C
E
Emitter
−
Base Breakdown Voltage (I
= 0.1 mAdc, I
= 0)
−
Vdc
E
C
Base Cutoff Current (V
= 35 Vdc, V
= 0.4 Vdc)
I
BEV
0.1
m
Adc
CE
EB
DC Current Gain
h
FE
−
(I =
0.1 mAdc, V
= 1.0 Vdc)
20
40
−
−
C
CE
(I =
1.0 mAdc, V
= 1.0 Vdc)
C
CE
(I =
10 mAdc, V
= 1.0 Vdc)
80
−
C
CE
(I =
150 mAdc, V
= 1.0 Vdc)
100
300
C
CE
(I =
500 mAdc, V
= 2.0 Vdc)
40
−
C
CE
Collector
−
Emitter Saturation Voltage
(I =
150 mAdc, I
= 15 mAdc)
V
Vdc
Vdc
CE(sat)
−
−
0.4
0.75
C
B
(I =
500 mAdc, I
= 50 mAdc)
C
B
Base
−
Emitter Saturation Voltage
(I =
150 mAdc, I
= 15 mAdc)
V
BE(sat)
0.75
−
0.95
1.2
C
B
(I =
500 mAdc, I
= 50 mAdc)
C
B
Collector Cutoff Current (V
= 35 Vdc, V
= 0.4 Vdc)
I
CEX
−
0.1
m
Adc
CE
EB
SMALL
−
SIGNAL CHARACTERISTICS
Current
−
Gain
−
Bandwidth Product (I
= 20 mAdc, V
= 10 Vdc, f = 100 MHz)
f
T
250
−
−
MHz
pF
C
CE
Collector
−
Base Capacitance
(V =
5.0 Vdc, I
= 0, f = 1.0 MHz)
C
cb
C
eb
6.5
30
CB
E
Emitter
−
Base Capacitance (V
= 0.5 Vdc, I
= 0, f = 1.0 MHz)
−
pF
EB
C
Input Impedance (I
= 1.0 mAdc, V
= 10 Vdc, f = 1.0 kHz)
h
1.0
0.1
40
1.0
15
k
W
C
CE
ie
−
4
Voltage Feedback Ratio (I
= 1.0 mAdc, V
= 10 Vdc, f = 1.0 kHz)
h
re
8.0
500
30
X 10
−
C
CE
Small
−
Signal Current Gain (I
= 1.0 mAdc, V
= 10 Vdc, f = 1.0 kHz)
h
fe
C
CE
Output Admittance (I
= 1.0 mAdc, V
= 10 Vdc, f = 1.0 kHz)
h
oe
m
mhos
C
CE
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
t
−
−
−
−
15
20
d
(V =
30 Vdc, V
= 2.0 Vdc,
CC
EB
ns
ns
I
C
= 150 mAdc, I
= 15 mAdc)
B1
t
r
t
225
30
s
(V =
30 Vdc, I
= 150 mAdc,
CC
C
I
B1
= I
= 15 mAdc)
B2
t
f
1. Pulse
T
e
st: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+ꢀ30 V
200
W
+ꢀ30 V
1.0 to 100
m
s,
1.0 to 100
m
s,
200
W
+16 V
DUTY CYCLE
≈
2.0%
+16 V
0
DUTY CYCLE
≈
2.0%
0
1.0 k
W
-14 V
1.0 k
W
C *
< 10 pF
S
-ꢀ2.0 V
C *
< 10 pF
S
< 20 ns
< 2.0 ns
-ꢀ4.0 V
Scope rise time < 4.0 ns
*
T
o
tal shunt capacitance of test jig connectors, and oscilloscope
Figure 1. Turn
−
On Time
Figure 2. Turn
−
Off Time
2
MMBT4401WT1G
TRANSIENT CHARACTERISTICS
25
°
C
100
°
C
30
20
10
7.0
V
= 30 V
CC
5.0
I /I
= 10
C B
3.0
2.0
C
obo
Q
T
10
1.0
0.7
0.5
7.0
5.0
0.3
0.2
C
cb
3.0
2.0
Q
A
0.1
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20 30
50
10
10
10
20
30
50 70 100
200 300
500
500
500
REVERSE VOLTAGE (VOLTS)
I ,
COLLECTOR CURRENT (mA)
C
Figure 3. Capacitances
Figure 4. Charge Data
100
70
100
70
I /I
= 10
C B
V
CC
= 30 V
t
I /I
= 10
C B
r
50
50
t @
V =
30 V
r CC
30
20
30
20
t
f
t @
V =
10 V
r
CC
t @
V =
2.0 V
d
EB
t @
V =
0
d EB
10
7.0
5.0
10
7.0
5.0
10
20
30
50 70
100
200 300
500
20
30
50 70
100
200
300
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 5. Turn
−
On Time
Figure 6. Rise and Fall Times
300
200
100
70
t
′
= t
– 1/8 t
f
s
s
V
I
= 30 V
CC
I
= I
B1 B2
I /I
= 10 to 20
= I
B1 B2
C B
50
I /I
= 20
C B
30
20
100
70
I /I
= 10
C B
10
50
7.0
5.0
30
10
20
30
50 70
100
200 300
500
20
30
50 70
100
200 300
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 7. Storage Time
Figure 8. Fall Time
3
MMBT4401WT1G
SMALL
−
SIGNAL CHARACTERISTICS
NOISE FIGURE
V
CE
= 10 Vdc, T
A
= 25
°
C; Bandwidth = 1.0 Hz
10
8.0
6.0
10
I =
1.0 mA, R
= 150
W
S
f = 1.0 kHz
I =
50
m
A
C
I =
500
m
A, R
= 200
W
C
S
I =
100
m
A, R
= 2.0 k
W
R =
OPTIMUM
S
8.0
6.0
C
S
RS =
SOURCE
RS =
RESISTANCE
C
I =
50
m
A, R
= 4.0 k
W
C S
I =
100
m
A
C
I =
500
m
A
C
I =
1.0 mA
C
4.0
2.0
0
4.0
2.0
0
50 100
200
500 1.0ꢁk
2.0ꢁk 5.0ꢁk
10ꢁk 20ꢁk
50ꢁk 100ꢁk
R ,
SOURCE RESISTANCE (OHMS)
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0 5.0
10 20
f, FREQUENCY (kHz)
50 100
S
Figure 10. Source Resistance Effects
Figure 9. Frequency Effects
h PARAMETERS
= 10 Vdc, f = 1.0 kHz, T
= 25
°
C
V
CE
A
This group of graphs illustrates the relationship between h
and other “h” parameters for this series of transistors. To obtain
fe
these curves, a high
−
gain and a low
−
gain unit were selected from the MMBT4401WT1 lines, and the same units were used
to develop the correspondingly numbered curves on each graph.
300
50ꢁk
MMBT4401LT1 UNIT 1
MMBT4401LT1 UNIT 2
200
20ꢁk
10ꢁk
5.0ꢁk
100
70
MMBT4401LT1 UNIT 1
MMBT4401LT1 UNIT 2
50
2.0ꢁk
30
20
1.0ꢁk
500
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
0.1
0.2 0.3
0.5 0.7
1.0
2.0 3.0
5.0 7.0 10
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 11. Current Gain
Figure 12. Input Impedance
10
7.0
5.0
100
50
MMBT4401LT1 UNIT 1
MMBT4401LT1 UNIT 2
3.0
2.0
20
10
1.0
0.7
0.5
MMBT4401LT1 UNIT 1
MMBT4401LT1 UNIT 2
5.0
2.0
1.0
0.3
0.2
0.1
0.2 0.3
0.5 0.7
1.0
2.0 3.0
5.0 7.0
10
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 13. Voltage Feedback Ratio
Figure 14. Output Admittance
4
MMBT4401WT1G
STATIC CHARACTERISTICS
1000
1000
V
CE
= 10 V
V
CE
= 1 V
T =
150
°
C
T =
25
°
C
A
T =
150
°
C
A
A
T =
25
°
C
A
T =
−
55
°
C
A
100
10
100
10
T =
−
55
°
C
A
0.1
1
10
100
1000
0.1
1
10
100
1000
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 15. DC Current Gain vs. Collector
Current
Figure 16. DC Current Gain vs. Collector
Current
1.0
T =
25
°
C
A
I /I
= 10
C
B
0.8
0.6
0.4
0.2
T =
−
55
°
C
A
T =
25
°
C
A
1 mA
10 mA
100 mA
I =
600 mA
C
0.2
0
T =
150
°
C
A
0.02
0.001
0.01
0.1
1
10
100
0.1
1
10
100
1000
I ,
BASE CURRENT (mA)
B
I ,
COLLECTOR CURRENT (mA)
C
Figure 17. Saturation Region
Figure 18. Collector Emitter Saturation Voltage
vs. Collector Current
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
1.0
0.9
0.8
0.7
0.6
0.5
0.4
I /I
= 10
C
B
T =
−
55
°
C
A
T =
−
55
°
C
A
T =
25
°
C
A
T =
25
°
C
A
T =
150
°
C
A
T =
150
°
C
A
0.3
0.2
V
= 1 V
CE
0.3
0.2
0.1
1
10
100
1000
0.1
1
10
100
1000
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 19. Base Emitter Saturation Voltage vs.
Collector Current
Figure 20. Base Emitter Turn
−
ON Voltage vs.
Collector Current
5
MMBT4401WT1G
1000
+ꢀ0.5
0
1 s
100 ms
10 ms
1 ms
0.1 ms
q
for V
CE(sat)
VC
100
10
-ꢀ0.5
-ꢀ1.0
-ꢀ1.5
-ꢀ2.0
-ꢀ2.5
q
for V
BE
VB
Single Pulse Test
at T
= 25
°
C
A
1.0
1.0
50 100
200 500
10
, COLLECTOR EMITTER VOLTAGE (V)
100
0.1 0.2
0.5 1.0 2.0
5.0 10 20
I ,
COLLECTOR CURRENT (mA)
C
V
CE
Figure 21. Temperature Coefficients
Figure 22. Safe Operating Area
6
MMBT4401WT1G
PACKAGE DIMENSIONS
SC
−
70 (SOT
−
323)
CASE 419
−
04
ISSUE N
NOTES:
1. DIMENSIONING
AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING
DIMENSION: INCH.
D
e1
MILLIMETERS
INCHES
DIM
A
A1
A2
b
c
D
E
e
e1
L
MIN
0.80
0.00
NOM
0.90
0.05
0.70 REF
0.35
0.18
2.10
1.24
1.30
0.65 BSC
0.38
MAX
1.00
0.10
MIN
0.032
0.000
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.015
MAX
0.040
0.004
3
E
H
E
1
2
0.30
0.10
1.80
1.15
1.20
0.40
0.25
2.20
1.35
1.40
0.012
0.004
0.071
0.045
0.047
0.016
0.010
0.087
0.053
0.055
b
e
0.20
2.00
0.56
2.40
0.008
0.079
0.022
0.095
H
2.10
0.083
E
STYLE 3:
c
A
PIN 1.
BASE
2. EMITTER
3. COLLECTOR
A2
0.05 (0.002)
L
A1
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
mm
ǒ
inches
Ǔ
SCALE 10:1
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mountin
g
T
e
chniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC).
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copyrights, trade secrets, and other intellectual property
. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. SCILLC
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for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different
applications and actual performance may vary over time.
All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical
experts. SCILLC
does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components
in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product
could create a situation where personal injury or death may occur.
Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall
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fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was
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MMBT4401WT1/D
