onsemi-MMBT4403LT3G
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MMBT4403L, SMMBT4403L
Switching
T
r
ansistor
PNP Silicon
Features
•
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
COLLECTOR
3
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
BASE
MAXIMUM RATINGS
2
EMITTER
Rating
Symbol
Value
Unit
Collecto
r
−
E
mitter Voltage
V
V
V
−40
Vdc
CEO
CBO
EBO
Collecto
r
−
B
ase Voltage
−40
−5.0
−600
−900
Vdc
Vdc
3
Emitte
r
−
B
ase Voltage
SOT−23 (TO−236)
CASE 318
STYLE 6
Collector Current − Continuous
Collector Current − Peak
I
C
mAdc
mAdc
1
I
2
CM
THERMAL CHARACTERISTICS
MARKING DIAGRAM
Characteristic
Symbol
Max
Unit
T
o
tal Device Dissipation FR
−
5
B
oard
P
D
(Note 1) @T
= 25
°
C
225
1.8
mW
mW/
°
C
A
2T M
G
Derate above 25
°
C
G
Thermal Resistance, Junction−to−Ambient
R
556
°
C/W
1
q
JA
T
o
tal Device Dissipation Alumina
P
2T
M
G
= Specific Device Code*
= Date Code*
= Pb−Free Package
D
Substrate, (Note 2) @T
= 25
°
C
300
2.4
mW
mW/
°
C
A
Derate above 25
°
C
(Note: Microdot may be in either location)
Thermal Resistance, Junction−to−Ambient
Junction and Storage
T
e
mperature
R
417
°
C/W
°
C
q
JA
*Specific Device Code, Date Code or overbar
orientation and/or location may vary depend-
ing upon manufacturing location. This is a
representation only and actual devices may
not match this drawing exactly.
T , T
J
−55 to +150
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
*Transient pulses must not cause the junction temperature to be exceeded.
1. FR
−
5
=
1
.0
ꢀ
0.75
ꢀ
0.062 in.
2. Alumina
= 0.4
ꢀ
0.3
ꢀ
0.024 in. 99.5% alumina.
ORDERING INFORMATION
†
Device
Package
Shipping
MMBT4403
L
T
1G
SOT−23 3000
/
T
a
pe & Reel
(Pb−Free)
SMMBT4403
L
T
1G SOT−23 3000
/
T
a
pe & Reel
(Pb−Free)
MMBT4403
L
T
3G
SOT−23
(Pb−Free)
10,000 /
T
a
pe &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 1994
1
Publication Order Number:
October, 2016 − Rev. 13
MMBT4403
L
T
1/D
MMBT4403L, SMMBT4403L
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collecto
r
−
E
mitter Breakdown Voltage (Note 3)
Collecto
r
−
B
ase Breakdown Voltage
Emitte
r
−
B
ase Breakdown Voltage
Base Cutoff Current
(I =
−1.0 mAdc, I
= 0)
V
−40
−40
−5.0
−
−
−
Vdc
Vdc
C
B
(BR)CEO
(BR)CBO
(BR)EBO
(I =
−0.1 mAdc, I
= 0)
V
V
C
E
(I =
−0.1 mAdc, I
= 0)
−
Vdc
E
C
(V =
−35 Vdc, V
= −0.4 Vdc)
I
−0.1
−0.1
m
Adc
m
Adc
CE
EB
BEV
Collector Cutoff Current
(V =
−35 Vdc, V
= −0.4 Vdc)
I
−
CE
EB
CEX
ON CHARACTERISTICS
DC Current Gain
h
FE
(I =
−0.1 mAdc, V
= −1.0 Vdc)
30
60
−
−
−
C
CE
(I =
−1.0 mAdc, V
= −1.0 Vdc)
C
CE
(I =
−10 mAdc, V
= −1.0 Vdc)
100
100
20
−
300
−
C
CE
(Note 3)
(Note 3)
(I =
−150 mAdc, V
= −2.0 Vdc)
C
CE
(I =
−500 mAdc, V
= −2.0 Vdc)
C
CE
Collecto
r
−
E
mitter Saturation Voltage (Note 3)
Bas
e
−
E
mitter Saturation Voltage (Note 3)
SMALL
−
S
IGNAL CHARACTERISTICS
V
Vdc
Vdc
CE(sat)
(I =
−150 mAdc, I
= −15 mAdc)
−
−
−0.4
−0.75
C
B
(I =
−500 mAdc, I
= −50 mAdc)
C
B
V
BE(sat)
(I =
−150 mAdc, I
= −15 mAdc)
−0.75
−
−0.95
−1.3
C
B
(I =
−500 mAdc, I
= −50 mAdc)
C
B
Curren
t
−
G
ain − Bandwidth Product
Collector−Base Capacitance
Emitter−Base Capacitance
Input Impedance
(I =
−20 mAdc, V
= −10 Vdc, f = 100 MHz)
f
T
200
−
−
MHz
pF
C
CE
(V =
−10 Vdc, I
= 0, f = 1.0 MHz)
C
cb
C
eb
8.5
30
CB
E
(V =
−0.5 Vdc, I
= 0, f = 1.0 MHz)
−
pF
BE
C
(I =
−1.0 mAdc, V
= −10 Vdc, f = 1.0 kHz)
h
1.5
0.1
60
1.0
15
k
W
C
CE
ie
re
fe
−4
Voltage Feedback Ratio
Smal
l
−
S
ignal Current Gain
Output Admittance
(I =
−1.0 mAdc, V
= −10 Vdc, f = 1.0 kHz)
h
h
8.0
500
100
X 10
−
C
CE
(I =
−1.0 mAdc, V
= −10 Vdc, f = 1.0 kHz)
C
CE
(I =
−1.0 mAdc, V
= −10 Vdc, f = 1.0 kHz)
h
oe
m
Mhos
C
CE
SWITCHING CHARACTERISTICS
Delay Time
t
−
−
−
−
15
20
d
(V =
−30 Vdc, V
= −2.0 Vdc,
CC
EB
ns
ns
I
C
= −150 mAdc, I
= −15 mAdc)
B1
Rise Time
t
r
Storage Time
t
225
30
s
(V =
−30 Vdc, I
= −150 mAdc,
CC
C
I
B1
= I
= −15 mAdc)
B2
Fall Time
t
f
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse
T
e
st: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUIT
-ꢀ30 V
-ꢀ30 V
200
W
200
W
< 20 ns
< 2 ns
+2 V
0
+14 V
0
1.0 k
W
1.0 k
W
C *
< 10 p
S
C *
< 10 pF
S
-16 V
-ꢀ16 V
1.0 to 100
m
s,
DUTY CYCLE = 2%
10 to 100
m
s,
DUTY CYCLE = 2%
+ꢀ4.0 V
Scope rise time < 4.0 ns
*
T
o
tal shunt capacitance of test jig connectors, and oscilloscope
Figure 1. Turn−On Time
Figure 2. Turn−Off Time
2
MMBT4403L, SMMBT4403L
TRANSIENT CHARACTERISTICS
25
°
C
100
°
C
10
7.0
5.0
100
70
I /I
= 10
C B
V
CC
I /I
= 10
= 30 V
C B
50
3.0
2.0
t @
V =
30 V
r
CC
t @
V =
10 V
30
20
r
t @
V
CC
= 2 V
= 0
d BE(off)
t @
V
BE(off)
1.0
0.7
d
0.5
Q
T
0.3
0.2
10
7.0
5.0
Q
A
0.1
10
20
30
50 70
100
200 300
500
200 300
10
20
30
50 70
100
500
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 3. Charge Data
Figure 4. Turn−On Time
100
200
70
50
I /I
= 10
C B
V
CC
I /I
= 10
= 30 V
C B
100
70
30
20
I /I
= 20
C B
50
I =
I
B1 B2
t
′
= t
– 1/8 t
s
s
f
10
7.0
5.0
30
20
10
20
30
50 70
100
200 300
500
10
20
30
50 70
100
200
300
500
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 6. Storage Time
Figure 5. Rise Time
SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE
V
CE
= −10 Vdc, T
A
= 25
°
C; Bandwidth = 1.0 Hz
10
10
8
f = 1 kHz
8
I
I
I
I
= 1.0 mA, R
= 430
W
S
C
C
C
C
6
4
2
0
6
I
C
= 50
m
A
= 500
m
A, R
= 560
W
S
100
m
A
500
m
A
1.0 mA
= 50
m
A, R
= 2.7 k
W
S
= 100
m
A, R
= 1.6 k
W
S
4
2
R
= OPTIMUM SOURCE RESISTANCE
S
0
0.01 0.02
0.05 0.1
0.2 0.5
1.0 2.0
5.0 10
20
50 100
50 100
200
500 1ꢁk 2ꢁk
5ꢁk 10ꢁk
20ꢁk
50ꢁk
f, FREQUENCY (kHz)
R ,
SOURCE RESISTANCE (OHMS)
S
Figure 7. Frequency Effects
Figure 8. Source Resistance Effects
3
MMBT4403L, SMMBT4403L
h PARAMETERS
V
CE
= 10 Vdc, f = 1.0 kHz, T
= 25
°
C
A
This group of graphs illustrates the relationship between h
and other “h” parameters for this series of transistors. To obtain
fe
these curves, a high−gain and a low−gain unit were selected from the MMBT4403
L
T
1 lines, and the same units were used to
develop the correspondingly numbered curves on each graph.
100ꢁk
MMBT4403LT1 UNIT 1
MMBT4403LT1 UNIT 2
50ꢁk
20ꢁk
10ꢁk
5ꢁk
2ꢁk
1ꢁk
500
200
100
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
10
I ,
COLLECTOR CURRENT (mAdc)
C
Figure 9. Input Impedance
20
10
500
MMBT4403LT1 UNIT 1
MMBT4403LT1 UNIT 2
5.0
100
50
2.0
1.0
0.5
20
MMBT4403LT1 UNIT 1
MMBT4403LT1 UNIT 2
10
5.0
0.2
0.1
2.0
1.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
10
I ,
COLLECTOR CURRENT (mAdc)
C
I ,
COLLECTOR CURRENT (mAdc)
C
Figure 10. Voltage Feedback Ratio
Figure 11. Output Admittance
4
MMBT4403L, SMMBT4403L
STATIC CHARACTERISTICS
450
400
350
300
250
200
150
V
CE
V
CE
V
CE
= 5.0 V
= 2.0 V
= 1.0 V
T =
150
°
C
J
25
°
C
-ꢀ55
°
C
100
50
0.001
0.01
0.1
1
0.0001
I ,
COLLECTOR CURRENT (A)
C
Figure 12. DC Current Gain
1.2
1.0
0.8
I
C
= 1.0 mA
10 mA
100 mA
500 mA
0.6
0.4
0.2
0
0.001
0.01
0.1
1
10
100
I ,
BASE CURRENT (mA)
b
Figure 13. Collector Saturation Region
0.35
0.30
0.25
0.20
0.5
0
I /I
= 10
C B
q
for V
CE(sat)
VC
0.5
150
°
C
1.0
25
°
C
0.15
0.10
1.5
2.0
2.5
-55
°
C
q
for V
BE
VS
0.05
0
0.0001
0.001
0.01
0.1
1
0.1 0.2
0.5 1.0
2.0 5.0
10 20
50 100
200 500
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 14. Collector−Emitter Saturation
Voltage vs. Collector Current
Figure 15. Temperature Coefficients
5
MMBT4403L, SMMBT4403L
STATIC CHARACTERISTICS
1.1
1.0
0.9
0.8
0.7
0.6
0.5
1.0
I /I
= 10
V
CE
= 2.0 V
C
B
0.9
0.8
0.7
0.6
0.5
0.4
−55
°
C
−55
°
C
25
°
C
25
°
C
150
°
C
150
°
C
0.4
0.3
0.3
0.2
0.0001
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 16. Base−Emitter Saturation Voltage vs.
Collector Current
Figure 17. Base−Emitter Turn On Voltage vs.
Collector Current
40
15
13
11
9
35
30
25
20
7
15
10
5
3
0
1
2
3
4
5
6
0
5
10
V ,
COLLECTOR BASE VOLTAGE (V)
cb
15
20
25
30
35
40
V
eb
, EMITTER BASE VOLTAGE (V)
Figure 18. Input Capacitance vs. Emitter Base
Voltage
Figure 19. Output Capacitance vs. Collector
Base Voltage
1000
100
10
1000
100
100
m
s
1 ms
V
= 1.0 V
10 ms
CE
1 s
T =
25
°
C
A
Thermal Limit
10
1
0.1
1
10
100
0.1
1
10
100
1000
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
I ,
COLLECTOR CURRENT (mA)
C
Figure 20. Safe Operating Area
Figure 21. Current−Gain−Bandwidth Product
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT
−
23 (TO
−
236)
CASE 318
−
08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
NOTES:
D
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
0.25
3
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
T
H
E
E
1
2
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
°
NOM
1.00
0.06
0.44
0.14
2.90
1.30
1.90
0.43
0.54
2.40
−−−
MAX
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
°
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
°
L
1.11
0.10
0.50
0.20
3.04
1.40
2.04
0.55
0.69
2.64
10
°
3X
b
L1
VIEW C
e
TOP VIEW
L1
A
H
E
T
c
A1
SEE VIEW C
SIDE VIEW
GENERIC
MARKING DIAGRAM*
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT
XXXM
G
G
1
3X
0.90
XXX = Specific Device Code
2.90
M
= Date Code
G
= Pb
−
Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present.
3X
0.95
0.80
PITCH
DIMENSIONS: MILLIMETERS
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
STYLE 7:
PIN 1.
EMITTER
2. BASE
STYLE 8:
PIN 1.
BASE
2. EMITTER
3. COLLECTOR
PIN 1.
ANODE
2. NO
CONNECTION
3. CATHODE
3. COLLECTOR
STYLE 9:
PIN 1.
ANODE
2. ANODE
STYLE 10:
STYLE 11:
STYLE 12:
STYLE 13:
PIN 1.
SOURCE
2. DRAIN
STYLE 14:
PIN 1.
CATHODE
2. GATE
PIN 1.
DRAIN
2. SOURCE
3. GATE
PIN 1.
ANODE
PIN 1.
CATHODE
2. CATHODE
3. ANODE
2. CATHODE
3. CATHODE
−
ANODE
3. CATHODE
3. GATE
3. ANODE
STYLE 15:
STYLE 16:
STYLE 17:
PIN 1.
NO CONNECTION
2. ANODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1.
GATE
2. CATHODE
3. ANODE
PIN 1.
ANODE
2. CATHODE
3. CATHODE
PIN 1.
NO CONNECTION
PIN 1.
CATHODE
PIN 1.
CATHODE
2. ANODE
3. GATE
2. CATHODE
3. ANODE
2. ANODE
3. CATHODE
−
ANODE
3. CATHODE
STYLE 21:
STYLE 22:
STYLE 23:
PIN 1.
ANODE
2. ANODE
STYLE 24:
STYLE 25:
STYLE 26:
PIN 1.
GATE
2. SOURCE
3. DRAIN
PIN 1.
RETURN
2. OUTPUT
3. INPUT
PIN 1.
GATE
2. DRAIN
PIN 1.
ANODE
2. CATHODE
3. GATE
PIN 1.
CATHODE
2. ANODE
3. SOURCE
3. NO
CONNECTION
3. CATHODE
STYLE 27:
STYLE 28:
PIN 1.
CATHODE
2. CATHODE
3. CATHODE
PIN 1.
ANODE
2. ANODE
3. ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT
−
23 (TO
−
236)
PAGE 1 OF 1
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