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onsemi
. “
T
ypical” parameters which may be provided in
onsemi
data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts.
onsemi
does not convey any license under any of its intellectual property rights nor the rights of others.
onsemi
products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use
onsemi
products for any such unintended or unauthorized application, Buyer shall indemnify and hol
d
onsemi
and its officers, employees,
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associated with such unintended or unauthorized use, even if such claim alleges that
onsemi
was negligent regarding the design or manufacture of the part.
onsemi
is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
MMBT4403M3T5G
PNP Switching
T
r
ansistor
The MMBT4403M3T5G device is a spin
−
off of our popular
SOT
−
23 three
−
leaded device. It is designed for general purpose
switching applications and is housed in the SOT
−
723 surface mount
package. This device is ideal for low
−
power surface mount
applications where board space is at a premium.
Features
•
Reduces Board Space
•
This is a Halide
−
Free Device
•
This is a Pb
−
Free Device
COLLECTOR
3
1
BASE
MAXIMUM RATINGS
Rating
Collecto
r
−
Emitter Voltage
Collecto
r
−
Base Voltage
Emitter
−
Base Voltage
Symbol Value
Unit
Vdc
V
CEO
V
CBO
−
40
−
40
2
EMITTER
Vdc
V
−
5.0
−
600
Vdc
EBO
Collector Current
−
Continuous
THERMAL CHARACTERISTICS
Characteristic
I
C
mAdc
MARKING
DIAGRAM
3
Symbol
Max
Unit
SOT
−
723
CASE 631AA
STYLE 1
AG M
T
o
tal Device Dissipation
P
D
mW
265
2.1
2
mW/
°
C
1
T =
25
°
C
A
Derate above 25
°
C
AG
= Specific Device Code
= Date Code
Thermal Resistance,
Junction
−
to
−
Ambient
R
q
JA
470
°
C/W
M
T
o
tal Device Dissipation
Derate above 25
°
C
P
640
5.1
mW
mW/
°
C
°
C/W
D
A
ORDERING INFORMATION
Thermal Resistance,
R
q
195
JA
†
Device
Package
Shipping
Junction
−
to
−
Ambient
MMBT4403M3T5G
SOT
−
723 8000/
T
a
pe
& Reel
(Pb
−
Free)
Junction and Storage
T
e
mperature
T , T
−
55 to
+150
°
C
J
stg
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR
−
5 = 1.0
ꢀ
0.75
ꢀ
0.062 in.
2. Alumina
= 0.4
ꢀ
0.3
ꢀ
0.024 in. 99.5% alumina.
©
Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
January, 2009
−
Rev. 0
MMBT4403M3/D
MMBT4403M3T5G
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collecto
r
−
Emitter Breakdown Voltage (Note 3)
Collecto
r
−
Base Breakdown Voltage
Emitter
−
Base Breakdown Voltage
Base Cutoff Current
(I =
−
1.0 mAdc, I
= 0)
V
−
40
−
40
−
5.0
−
−
−
Vdc
Vdc
C
B
(BR)CEO
(BR)CBO
(BR)EBO
(I =
−
0.1 mAdc, I
= 0)
V
V
C
E
(I =
−
0.1 mAdc, I
= 0)
−
Vdc
E
C
(V =
−
35 Vdc, V
=
−
0.4 Vdc)
I
−
0.1
−
0.1
m
Adc
m
Adc
CE
EB
BEV
Collector Cutoff Current
(V =
−
35 Vdc, V
=
−
0.4 Vdc)
I
−
CE
EB
CEX
ON CHARACTERISTICS
DC Current Gain
h
FE
(I =
−
0.1 mAdc, V
=
−
1.0 Vdc)
30
60
100
100
20
−
−
−
C
CE
(I =
−
1.0 mAdc, V
=
−
1.0 Vdc)
C
CE
(I =
−
10 mAdc, V
=
−
1.0 Vdc)
−
C
CE
(Note 3)
(Note 3)
(I =
−
150 mAdc, V
=
−
2.0 Vdc)
300
−
C
CE
(I =
−
500 mAdc, V
=
−
2.0 Vdc)
C
CE
Collecto
r
−
Emitter Saturation Voltage (Note 3)
Bas
e
−
Emitter Saturation Voltage (Note 3)
SMALL
−
SIGNAL CHARACTERISTICS
V
Vdc
Vdc
CE(sat)
(I =
−
150 mAdc, I
=
−
15 mAdc)
−
−
−
0.4
C
B
(I =
−
500 mAdc, I
=
−
50 mAdc)
−
0.75
C
B
V
BE(sat)
(I =
−
150 mAdc, I
=
−
15 mAdc)
−
0.75
−
−
0.95
−
1.3
C
B
(I =
−
500 mAdc, I
=
−
50 mAdc)
C
B
Curren
t
−
Gain
−
Bandwidth Product
Collector
−
Base Capacitance
Emitter
−
Base Capacitance
Input Impedance
(I =
−
20 mAdc, V
=
−
10 Vdc, f = 100 MHz)
f
T
200
−
−
MHz
pF
C
CE
(V =
−
10 Vdc, I
= 0, f = 1.0 MHz)
C
cb
C
eb
8.5
30
CB
E
(V =
−
0.5 Vdc, I
= 0, f = 1.0 MHz)
−
pF
BE
C
(I =
−
1.0 mAdc, V
=
−
10 Vdc, f = 1.0 kHz)
h
1.5
0.1
60
1.0
15
k
W
C
CE
ie
re
fe
−
4
Voltage Feedback Ratio
Smal
l
−
Signal Current Gain
Output Admittance
(I =
−
1.0 mAdc, V
=
−
10 Vdc, f = 1.0 kHz)
h
h
8.0
500
100
X 10
−
C
CE
(I =
−
1.0 mAdc, V
=
−
10 Vdc, f = 1.0 kHz)
C
CE
(I =
−
1.0 mAdc, V
=
−
10 Vdc, f = 1.0 kHz)
h
oe
m
Mhos
C
CE
SWITCHING CHARACTERISTICS
Delay Time
t
−
−
−
−
15
20
d
(V =
−
30 Vdc, V
=
−
2.0 Vdc,
CC
EB
ns
ns
I
=
−
150 mAdc, I
=
−
15 mAdc)
C
B1
Rise Time
t
r
Storage Time
t
225
30
s
(V =
−
30 Vdc, I
=
−
150 mAdc,
CC
C
I
B1
= I
=
−
15 mAdc)
B2
Fall Time
t
f
3. Pulse
T
e
st: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUIT
-ꢀ30 V
200
W
-ꢀ30 V
200
W
< 20 ns
< 2 ns
+2 V
0
+14 V
0
1.0 k
W
1.0 k
W
C *
< 10 p
S
C *
< 10 pF
S
-16 V
-ꢀ16 V
1.0 to 100
m
s,
DUTY CYCLE = 2%
10 to 100
m
s,
DUTY CYCLE = 2%
+ꢀ4.0 V
Scope rise time < 4.0 ns
*
T
o
tal shunt capacitance of test jig connectors, and oscilloscope
Figure 1. Turn
−
On Time
Figure 2. Turn
−
Off Time
2
MMBT4403M3T5G
STATIC CHARACTERISTICS
450
400
350
300
250
200
150
V
CE
V
CE
V
CE
= 5.0 V
= 2.0 V
= 1.0 V
T =
150
°
C
J
25
°
C
-ꢀ55
°
C
100
50
0.001
0.01
0.1
1
0.0001
I ,
COLLECTOR CURRENT (A)
C
Figure 3. DC Current Gain
1.2
1.0
0.8
I
C
= 1.0 mA
10 mA
100 mA
500 mA
0.6
0.4
0.2
0
0.001
0.01
0.1
1
10
100
I ,
BASE CURRENT (mA)
b
Figure 4. Collector Saturation Region
0.35
0.30
0.25
0.20
0.5
0
I /I
= 10
C B
q
for V
CE(sat)
VC
0.5
150
°
C
1.0
25
°
C
0.15
0.10
1.5
2.0
2.5
-55
°
C
q
for V
BE
VS
0.05
0
0.0001
0.001
0.01
0.1
1
0.1 0.2
0.5 1.0
2.0 5.0
10 20
50 100
200 500
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 5. Collector
−
Emitter Saturation Voltage
Figure 6. Temperature Coefficients
vs. Collector Current
3
MMBT4403M3T5G
1.1
1.0
0.9
0.8
0.7
0.6
0.5
1.0
I /I
= 10
V
= 2.0 V
C
B
CE
0.9
0.8
0.7
0.6
0.5
0.4
−
55
°
C
−
55
°
C
25
°
C
25
°
C
150
°
C
150
°
C
0.4
0.3
0.3
0.2
0.0001
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 7. Base
−
Emitter Saturation Voltage vs.
Figure 8. Base
−
Emitter Turn On Voltage vs.
Collector Current
Collector Current
40
15
13
11
9
35
30
25
20
7
15
10
5
3
0
1
2
3
4
5
6
0
5
10
V ,
COLLECTOR BASE VOLTAGE (V)
cb
15
20
25
30
35
40
V
eb
, EMITTER BASE VOLTAGE (V)
Figure 9. Input Capacitance vs. Emitter Base
Voltage
Figure 10. Output Capacitance vs. Collector
Base Voltage
4
MMBT4403M3T5G
PACKAGE DIMENSIONS
SOT
−
723
CASE 631AA
−
01
ISSUE C
NOTES:
1. DIMENSIONING
AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
−
X
−
D
A
b1
−
Y
−
3
E
MILLIMETERS
INCHES
NOM MAX
0.018 0.020 0.022
L
H
E
1
2
DIM MIN
NOM
0.50
0.21
0.31
0.12
1.20
0.80
MAX
0.55
0.27 0.0059
0.0083 0.0106
0.37 0.010
0.012 0.015
0.17 0.0028
0.0047 0.0067
1.25
0.85
MIN
A
b
b1
C
D
E
e
H
E
L
0.45
0.15
0.25
0.07
1.15
0.75
b
2X
C
e
0.08 (0.0032)
X Y
0.045 0.047 0.049
0.03 0.032 0.034
0.016 BSC
STYLE 1:
PIN 1.
BASE
2. EMITTER
3. COLLECTOR
0.40 BSC
1.20
0.20
1.15
0.15
1.25
0.045 0.047 0.049
0.25 0.0059
0.0079 0.0098
SOLDERING FOOTPRINT*
0.40
0.0157
0.40
0.0157
1.0
0.039
0.40
0.0157
0.40
0.0157
0.40
0.0157
mm
inches
ǒ
Ǔ
SCALE 20:1
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC).
SCILLC reserves the right to make changes without further notice
to any products herein.
SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time.
All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
SCILLC does not convey any license under its patent rights
nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.
Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.
SCILLC is an Equal
Opportunity/Affirmative Action Employer.
This literature is subject to all applicable copyright laws and is not for resale in any manner.
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A
T
ION ORDERING INFORMATION
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MMBT4403M3/D
