onsemi-MMBT4403WT1G
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MMBT4403WT1G
Switching
T
r
ansistor
PNP Silicon
Features
•
Moisture Sensitivity Level: 1
•
ESD Rating:
Human Body Model; 4 k
V
,
Machine Model; 400 V
COLLECTOR
3
•
These Devices are Pb
−
Free, Halogen Free/BFR Free and are RoHS
Compliant
1
BASE
MAXIMUM RATINGS
2
EMITTER
Rating
Symbol
Value
−
40
Unit
Vdc
Collector
−
Emitter Voltage
Collector
−
Base Voltage
V
CEO
V
CBO
3
−
40
Vdc
Emitter
−
Base Voltage
V
−
5.0
−
600
Vdc
EBO
1
2
Collector Current
−
Continuous
THERMAL CHARACTERISTICS
Characteristic
I
C
mAdc
SC
−
70
CASE 419
STYLE 3
Symbol
Max
Unit
T
o
tal Device Dissipation FR
−
5 Board
P
D
150
mW
T =
25
°
C
A
MARKING DIAGRAM
Thermal Resistance,
Junction
−
to
−
Ambient
R
833
°
C/W
°
C
q
JA
2T M
G
Junction and Storage
T
e
mperature
T , T
J
−
55 to +150
stg
G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommende
d
O
perating Conditions may affect device reliability.
1
2T
M
G
= Specific Device Code
= Date Code
= Pb
−
Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon
manufacturin
g
l
ocation.
ORDERING INFORMATION
†
Device
Package
Shipping
MMBT4403WT1G
SC
−
70
3000 /
(Pb
−
Free)
T
a
pe & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
April, 2013
−
Rev. 4
MMBT4403WT1/D
MMBT4403WT1G
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
V
−
40
−
40
−
5.0
−
−
−
Vdc
Vdc
C
B
(BR)CEO
(BR)CBO
(BR)EBO
Collector
−
Base Breakdown Voltage (I
=
−
0.1 mAdc, I
= 0)
V
V
C
E
Emitter
−
Base Breakdown Voltage (I
=
−
0.1 mAdc, I
= 0)
−
Vdc
E
C
Base Cutoff Current (V
=
−
35 Vdc, V
=
−
0.4 Vdc)
I
−
0.1
−
0.1
m
Adc
m
Adc
CE
EB
BEV
Collector Cutoff Current (V
=
−
35 Vdc, V
=
−
0.4 Vdc)
I
−
CE
EB
CEX
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I =
−
0.1 mAdc, V
=
−
1.0 Vdc)
30
60
100
100
20
−
−
C
CE
(I =
−
1.0 mAdc, V
=
−
1.0 Vdc)
C
CE
CE
CE
CE
(I =
−
10 mAdc, V
=
−
1.0 Vdc)
−
C
300
−
C
C
(I =
−
150 mAdc, I
=
−
15 mAdc)
V
Vdc
Vdc
CE(sat)
−
−
−
0.4
C
B
(I =
−
500 mAdc, I
=
−
50 mAdc)
−
0.75
C
B
(I =
−
150 mAdc, I
=
−
15 mAdc)
V
BE(sat)
−
0.75
−
−
0.95
−
1.3
C
B
(I =
−
500 mAdc, I
=
−
50 mAdc)
C
B
SMALL
−
SIGNAL CHARACTERISTICS
Current
−
Gain
−
Bandwidth Product (I
=
−
20 mAdc, V
=
−
10 Vdc, f = 100 MHz)
f
T
200
−
−
MHz
pF
C
CE
Collector
−
Base Capacitance (V
=
−
10 Vdc, I
= 0, f = 1.0 MHz)
C
cb
C
eb
8.5
30
CB
E
Emitter
−
Base Capacitance (V
=
−
0.5 Vdc, I
= 0, f = 1.0 MHz)
−
pF
BE
C
Input Impedance (I
=
−
1.0 mAdc, V
=
−
10 Vdc, f = 1.0 kHz)
h
1.5
0.1
60
1.0
15
k
W
C
CE
ie
−
4
Voltage Feedback Ratio (I
=
−
1.0 mAdc, V
=
−
10 Vdc, f = 1.0 kHz)
h
re
8.0
500
100
X 10
C
CE
Small
−
Signal Current Gain (I
=
−
1.0 mAdc, V
=
−
10 Vdc, f = 1.0 kHz)
h
fe
−
C
CE
Output Admittance (I
=
−
1.0 mAdc, V
=
−
10 Vdc, f = 1.0 kHz)
h
oe
m
mhos
C
CE
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
t
−
−
−
−
15
20
d
(V =
−
30 Vdc, V
=
−
2.0 Vdc,
CC
EB
ns
ns
I
=
−
150 mAdc, I
=
−
15 mAdc)
C
B1
t
r
t
225
30
s
(V =
−
30 Vdc, I
=
−
150 mAdc,
CC
C
I
B1
= I
=
−
15 mAdc)
B2
t
f
1. Pulse
T
e
st: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUIT
-ꢀ30 V
200
W
-ꢀ30 V
200
W
< 20 ns
< 2 ns
+2 V
0
+14 V
0
1.0 k
W
1.0 k
W
C *
< 10 pF
S
C *
< 10 pF
S
-16 V
-ꢀ16 V
1.0 to 100
m
s,
DUTY CYCLE = 2%
10 to 100
m
s,
DUTY CYCLE = 2%
+ꢀ4.0 V
Scope rise time < 4.0 ns
*
T
o
tal shunt capacitance of test jig connectors, and oscilloscope
Figure 1. Turn
−
On Time
Figure 2. Turn
−
Off Time
2
MMBT4403WT1G
TRANSIENT CHARACTERISTICS
25
°
C
100
°
C
100
10
7.0
5.0
V
CC
= 30 V
I /I
= 10
C B
3.0
2.0
C
ibo
C
obo
10
1.0
0.7
0.5
Q
T
0.3
0.2
Q
A
1
0.1
0.1
1
10
100
10
20
30
50 70
100
200 300
500
V ,
REVERSE VOLTAGE (VOLTS)
R
I ,
COLLECTOR CURRENT (mA)
C
Figure 3. Capacitances
Figure 4. Charge Data
100
70
100
70
I /I
= 10
C B
V
CC
= 30 V
I /I
= 10
C B
50
50
t @
V =
30 V
r CC
t @
V =
10 V
CC
30
20
30
20
r
t @
V
= 2 V
= 0
d
BE(off)
BE(off)
t @
V
d
10
7.0
5.0
10
7.0
5.0
10
20
30
50 70
100
200 300
500
10
20
30
50 70
100
200
300
500
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 5. Turn
−
On Time
Figure 6. Rise Time
200
I /I
= 10
C B
100
70
I /I
= 20
C B
50
I
= I
B1 B2
t
′
= t
– 1/8 t
s
s
f
30
20
10
20
30
50 70
100
200 300
500
I ,
COLLECTOR CURRENT (mA)
C
Figure 7. Storage Time
3
MMBT4403WT1G
SMALL
−
SIGNAL CHARACTERISTICS
NOISE FIGURE
V
CE
=
−
10 Vdc, T
A
= 25
°
C; Bandwidth = 1.0 Hz
10
10
8
f = 1 kHz
8
I
I
I
I
= 1.0 mA, R
= 430
W
S
C
C
C
C
6
4
2
0
6
I
= 50
m
A
C
= 500
m
A, R
= 560
W
S
= 50
m
A, R
= 2.7 k
W
100
m
A
500
m
A
1.0 mA
S
= 100
m
A, R
= 1.6 k
W
S
4
2
R
= OPTIMUM SOURCE RESISTANCE
S
0
0.01 0.02
0.05 0.1
0.2 0.5
1.0 2.0
5.0 10
20
50 100
50 100
200
500 1ꢁk 2ꢁk
5ꢁk 10ꢁk
20ꢁk
50ꢁk
f, FREQUENCY (kHz)
R ,
SOURCE RESISTANCE (OHMS)
S
Figure 8. Frequency Effects
Figure 9. Source Resistance Effects
h PARAMETERS
= 10 Vdc, f = 1.0 kHz, T
= 25
°
C
V
CE
A
This group of graphs illustrates the relationship between h
and other “h” parameters for this series of transistors. To obtain
fe
these curves, a high
−
gain and a low
−
gain unit were selected from the MMBT4403WT1 lines, and the same units were used
to develop the correspondingly numbered curves on each graph.
1000
100ꢁk
50ꢁk
MMBT4403WT1 UNIT 1
MMBT4403WT1 UNIT 2
700
500
20ꢁk
10ꢁk
5ꢁk
300
200
2ꢁk
MMBT4403WT1 UNIT 1
MMBT4403WT1 UNIT 2
100
1ꢁk
70
50
500
200
100
30
0.1
0.2 0.3
0.5 0.7
1.0
2.0 3.0
5.0 7.0 10
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
10
I ,
COLLECTOR CURRENT (mAdc)
C
I ,
COLLECTOR CURRENT (mAdc)
C
Figure 10. Current Gain
Figure 11. Input Impedance
20
10
500
MMBT4403WT1 UNIT 1
MMBT4403WT1 UNIT 2
5.0
100
50
2.0
1.0
0.5
20
MMBT4403WT1 UNIT 1
MMBT4403WT1 UNIT 2
10
5.0
0.2
0.1
2.0
1.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
10
I ,
COLLECTOR CURRENT (mAdc)
C
I ,
COLLECTOR CURRENT (mAdc)
C
Figure 12. Voltage Feedback Ratio
Figure 13. Output Admittance
4
MMBT4403WT1G
STATIC CHARACTERISTICS
1000
1000
V
CE
=
−
1 V
V
CE
=
−
10 V
T =
150
°
C
A
T =
150
°
C
A
T =
25
°
C
A
T =
25
°
C
A
T =
−
55
°
C
A
T =
−
55
°
C
A
100
10
100
10
1
0.1
1
10
100
1000
0.1
1
10
100
1000
I ,
COLLECTOR CURRENT (mA)
I ,
COLLECTOR CURRENT (mA)
C
C
Figure 14. DC Current Gain vs. Collector
Current
Figure 15. DC Current Gain vs. Collector
Current
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
I /I
= 10
C
B
T =
150
°
C
A
T =
25
°
C
A
0.1
T =
25
°
C
A
T =
−
55
°
C
A
600 mA
100 mA
10 mA
0.2
0
I
= 1 mA
C
0.01
0.001
0.01
0.1
1
10
100
0.1
1
10
100
1000
I ,
BASE CURRENT (mA)
B
I ,
COLLECTOR CURRENT (mA)
C
Figure 16. Saturation Region
Figure 17. Collector Emitter Saturation Voltage
vs. Collector Current
1.0
0.9
0.8
0.7
0.6
0.5
0.4
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
T =
−
55
°
C
A
T =
−
55
°
C
A
T =
25
°
C
A
T =
25
°
C
A
T =
150
°
C
A
T =
150
°
C
A
0.3
0.2
I /I
= 10
V
=
−
1 V
C
B
0.3
0.2
CE
0.1
1
10
100
1000
0.1
1
10
100
1000
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 18. Base Emitter Saturation Voltage vs.
Collector Current
Figure 19. Base
−
Emitter Turn
−
On Voltage vs.
Collector Current
5
MMBT4403WT1G
STATIC CHARACTERISTICS
1000
100
0.5
0.001 0.0001
1 s
0
0.5
1.0
1.5
2.0
2.5
q
for V
CE(sat)
VC
0.1
0.01
10
1
q
for V
BE
VS
Single Pulse Test at T
= 25
°
C
A
100
50 100
200 500
1
10
, COLLECTOR EMITTER VOLTAGE (V)
0.1 0.2
0.5 1.0
2.0 5.0
10 20
V
CE
I ,
COLLECTOR CURRENT (mA)
C
Figure 20. Safe Operating Area
Figure 21. Temperature Coefficients
6
MMBT4403WT1G
PACKAGE DIMENSIONS
SC
−
70 (SOT
−
323)
CASE 419
−
04
ISSUE N
NOTES:
1. DIMENSIONING
AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING
DIMENSION: INCH.
D
e1
MILLIMETERS
INCHES
DIM
A
A1
A2
b
c
D
E
e
e1
L
MIN
0.80
0.00
NOM
0.90
0.05
0.70 REF
0.35
0.18
2.10
1.24
1.30
0.65 BSC
0.38
MAX
1.00
0.10
MIN
0.032
0.000
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.015
MAX
0.040
0.004
3
E
H
E
1
2
0.30
0.10
1.80
1.15
1.20
0.40
0.25
2.20
1.35
1.40
0.012
0.004
0.071
0.045
0.047
0.016
0.010
0.087
0.053
0.055
b
e
0.20
2.00
0.56
2.40
0.008
0.079
0.022
0.095
H
2.10
0.083
E
STYLE 3:
c
PIN 1.
BASE
2. EMITTER
3. COLLECTOR
A
A2
0.05 (0.002)
L
A1
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
mm
ǒ
inches
Ǔ
SCALE 10:1
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mountin
g
T
e
chniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC).
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−
Marking.pdf
. SCILLC
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for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different
applications and actual performance may vary over time.
All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical
experts. SCILLC
does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components
in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product
could create a situation where personal injury or death may occur.
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fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was
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MMBT4403WT1/D
