onsemi-MMBT5550LT1G
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MMBT5550L, MMBT5551L
High Voltage Transistors
NPN Silicon
Features
•
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC
−
Q101 Qualified and
PPAP Capable
COLLECTOR
3
•
These Devices are Pb
−
Free, Halogen Free/BFR Free and are RoHS
Compliant
1
BASE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
2
EMITTER
Collecto
r
−
Emitter Voltage
V
CEO
V
CBO
V
EBO
Vdc
MMBT5550
MMBT5551
140
160
MARKING
DIAGRAM
3
Collecto
r
−
Base Voltage
Vdc
MMBT5550
MMBT5551
160
180
1
2
x1x M
G
Emitte
r
−
Base Voltage
6.0
Vdc
mAdc
V
SOT
−
23 (TO
−
236)
CASE 318
G
Collector Current
−
Continuous
Electrostatic Discharge
I
C
600
1
STYLE 6
ESD
Human Body Model
Machine Model
> 8000
> 400
x1x =
Device Code
M1F = MMBT5550LT
G1 = MMBT5551LT
= Date Code*
THERMAL CHARACTERISTICS
Characteristic
M
Symbol
Max
Unit
G
= Pb
−
Free Package
(Note: Microdot may be in either location)
T
o
tal Device Dissipation FR
−
5 Board
P
D
225
1.8
mW
mW/
°
C
A
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Derate Above 25
°
C
Thermal Resistance, Junction
−
to
−
Ambient
T
o
tal Device Dissipation Alumina
R
556
°
C/W
q
JA
P
D
300
2.4
mW
mW/
°
C
ORDERING INFORMATION
A
Derate Above 25
°
C
Thermal Resistance, Junction
−
to
−
Ambient
Junction and Storage
T
e
mperature
†
Device
Package
Shipping
R
417
°
C/W
°
C
q
JA
MMBT5550
L
T
1G
SOT
−
23
3,000 /
T
a
pe &
Reel
(Pb
−
Free)
T , T
−
55 to +150
J
stg
MMBT5550
L
T
3G
MMBT5551
L
T
1G
SOT
−
23
(Pb
−
Free)
10,000 /
T
a
pe &
Reel
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR
−
5 = 1.0
ꢀ
0.75
ꢀ
0.062 in.
SOT
−
23
(Pb
−
Free)
3,000 /
T
a
pe &
Reel
2. Alumina
= 0.4
ꢀ
0.3
ꢀ
0.024 in. 99.5% alumina.
SMMBT5551
L
T
1G SOT
−
23 3,000
/
T
a
pe & Reel
(Pb
−
Free)
MMBT5551
L
T
3G
SOT
−
23
(Pb
−
Free)
10,000 /
T
a
pe &
Reel
SMMBT5551
L
T
3G SOT
−
23
(Pb
−
Free)
10,000 /
T
a
pe &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 1994
1
Publication Order Number:
October, 2016
−
Rev. 12
MMBT5550
L
T
1/D
MMBT5550L, MMBT5551L
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
V
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
(I =
1.0 mAdc, I
= 0)
MMBT5550
MMBT5551
140
160
−
−
C
B
Collecto
r
−
Base Breakdown Voltage
(I =
100
m
Adc, I
= 0)
V
V
Vdc
Vdc
MMBT5550
MMBT5551
160
180
−
−
C
E
Emitte
r
−
Base Breakdown Voltage
(I =
10
m
Adc, I
= 0)
6.0
−
E
C
Collector Cutoff Current
(V =
100 Vdc, I
= 0)
I
CBO
MMBT5550
MMBT5551
MMBT5550
MMBT5551
−
−
−
−
100
50
100
50
nAdc
CB
E
(V =
120 Vdc, I
= 0)
CB
E
(V =
100 Vdc, I
= 0, T
= 100
°
C)
m
Adc
CB
E
A
A
(V =
120 Vdc, I
= 0, T
= 100
°
C)
CB
E
Emitter Cutoff Current
(V =
4.0 Vdc, I
= 0)
I
nAdc
EBO
−
50
EB
C
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I =
1.0 mAdc, V
= 5.0 Vdc)
MMBT5550
MMBT5551
MMBT5550
MMBT5551
MMBT5550
MMBT5551
60
80
60
80
20
30
−
−
C
CE
(I =
10 mAdc, V
= 5.0 Vdc)
C
250
250
−
CE
(I =
50 mAdc, V
= 5.0 Vdc)
C
CE
−
Collecto
r
−
Emitter Saturation Voltage
(I =
10 mAdc, I
= 1.0 mAdc)
V
Vdc
Vdc
nA
CE(sat)
Both Types
MMBT5550
MMBT5551
−
−
−
0.15
0.25
0.20
C
B
(I =
50 mAdc, I
= 5.0 mAdc)
C
B
Bas
e
−
Emitter Saturation Voltage
(I =
10 mAdc, I
= 1.0 mAdc)
V
BE(sat)
Both Types
MMBT5550
MMBT5551
−
−
−
1.0
1.2
1.0
C
B
(I =
50 mAdc, I
= 5.0 mAdc)
C
B
Collector Emitter Cut
−
off
(V =
10 V)
I
CES
Both Types
−
−
50
100
CB
(V =
75 V)
CB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse
T
e
st: Pulse Width = 300
m
s, Duty Cycle = 2.0%.
2
MMBT5550L, MMBT5551L
TYPICAL CHARACTERISTICS
500
300
200
V
V
= 1.0 V
= 5.0 V
CE
T =
125
°
C
J
CE
25
°
C
-ꢀ55
°
C
100
50
30
20
10
7.0
5.0
0.1
0.2
0.3
0.5
0.7
1.0
3.0
2.0
5.0
7.0
10
20
30
50
70
100
I ,
COLLECTOR CURRENT (mA)
C
Figure 1. DC Current Gain
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
I
C
= 1.0 mA
10 mA
30 mA
100 mA
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
I ,
BASE CURRENT (mA)
B
Figure 2. Collector Saturation Region
1
10
0.30
V
CE
= 30 V
I /I
= 10
C B
0
10
0.25
0.20
0.15
0.10
0.05
0
150
°
C
25
°
C
T =
125
°
C
-1
J
10
I
C
= I
CES
-2
10
10
75
°
C
REVERSE
-3
FORWARD
-55
°
C
25
°
C
-4
10
10
-5
0.4 0.3 0.2
0.1
0
0.1
0.2 0.3
0.4 0.5 0.6
0.0001
0.001
0.01
0.1
V
BE
, BASE-EMITTER VOLTAGE (VOLTS)
I ,
COLLECTOR CURRENT (A)
C
Figure 3. Collector Cut
−
Off Region
Figure 4. V
CE(sat)
3
MMBT5550L, MMBT5551L
TYPICAL CHARACTERISTICS
1.10
1.00
0.90
0.80
0.70
0.60
0.50
0.40
0.30
0.20
1.10
I /I
= 10
C B
V
CE
= 10 V
-55
°
C
1.00
0.90
0.80
0.70
0.60
0.50
0.40
0.30
0.20
-55
°
C
25
°
C
25
°
C
150
°
C
150
°
C
0.0001
0.001
0.01
0.1
0.0001
0.001
0.01
0.1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 5. V
BE(sat)
Figure 6. V
BE(on)
100
2.5
2.0
1.5
70
50
T =
25
°
C
J
T =
–
5
5
°
C to +135
°
C
J
30
20
1.0
0.5
0
q
for V
CE(sat)
VC
10
C
ibo
7.0
5.0
–
0
.5
–
1
.0
–
1
.5
–
2
.0
–
2
.5
q
for V
BE(sat)
VB
C
3.0
2.0
obo
1.0
0.1
0.2 0.3
0.5 1.0 2.0
3.0 5.0
10 20
30 50
100
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
10
20
I ,
COLLECTOR CURRENT (mA)
C
V ,
REVERSE VOLTAGE (VOLTS)
R
Figure 7. Temperature Coefficients
Figure 8. Capacitances
V
V
CC
30 V
BB
-ꢀ8.8 V
10.2 V
V
in
100
R
3.0 k
R
C
0.25
m
F
10
m
s
INPUT PULSE
B
V
out
5.1 k
100
t , t
≤
10 ns
1N914
r
f
DUTY CYCLE = 1.0%
V
in
Values Shown are for I
@ 10 mA
C
Figure 9. Switching Time Test Circuit
4
MMBT5550L, MMBT5551L
TYPICAL CHARACTERISTICS
1000
100
10
1
V
= 1 V
CE
T =
25
°
C
A
10 mS
0.1
0.01
1.0 S
1
0.001
0.1
1.0
10
100
1000
1.0
10
, COLLECTOR EMITTER VOLTAGE (V)
CE
100
1000
I ,
COLLECTOR CURRENT (mA)
C
V
Figure 10. Current Gain Bandwidth Product
Figure 11. Safe Operating Area
100
1000
500
I /I
= 10
C B
70
50
T =
25
°
C
J
T =
25
°
C
J
t @
V =
120 V
r CC
30
20
300
200
t @
V =
30 V
r CC
10
100
50
C
ibo
7.0
5.0
t @
V
d
= 1.0 V
EB(off)
C
3.0
2.0
obo
30
20
V
CC
= 120 V
1.0
10
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
10
20
0.2 0.3
0.5 1.0
2.0 3.0
5.0 10
20 30
50 100
200
V ,
REVERSE VOLTAGE (VOLTS)
R
I ,
COLLECTOR CURRENT (mA)
C
Figure 12. Capacitances
Figure 13. Turn
−
On Time
5
MMBT5550L, MMBT5551L
PACKAGE DIMENSIONS
SOT
−
23 (TO
−
236)
CASE 318
−
08
ISSUE AR
NOTES:
D
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
0.25
3
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
T
H
E
E
1
2
MILLIMETERS
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
DIM
A
A1
b
c
D
E
e
L
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
_
NOM
1.00
0.06
0.44
0.14
2.90
1.30
1.90
0.43
0.54
2.40
−−−
MAX
MIN
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
_
L
1.11
0.10
0.50
0.20
3.04
1.40
2.04
0.55
0.69
2.64
10
_
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
_
3X
b
L1
VIEW C
e
TOP VIEW
L1
A
H
E
T
c
A1
SEE VIEW C
STYLE 6:
PIN 1.
BASE
SIDE VIEW
END VIEW
2. EMITTER
3. COLLECTOR
RECOMMENDED
SOLDERING FOOTPRINT*
3X
0.90
2.90
3X
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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−
Marking.pdf
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T
:
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◊
MMBT5550LT1/D
