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. “
T
ypical” parameters which may be provided in
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onsemi
does not convey any license under any of its intellectual property rights nor the rights of others.
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products are not designed, intended, or authorized
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High Voltage Transistors
NPN Silicon
MMBT5550L, MMBT5551L
Features
•
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC
−
Q101
Qualified and PPAP Capable
•
These Devices are Pb
−
Free, Halogen Free/BFR Free and are RoHS
COLLECTOR
3
Compliant
1
BASE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collecto
r
−
Emitter Voltage
V
CEO
Vdc
2
EMITTER
MMBT5550
MMBT5551
140
160
Collecto
r
−
Base Voltage
V
CBO
Vdc
MARKING
DIAGRAM
3
MMBT5550
MMBT5551
160
180
1
Emitte
r
−
Base Voltage
V
6.0
Vdc
mAdc
V
2
EBO
x1x M
G
Collector Current
−
Continuous
Electrostatic Discharge
I
C
600
SOT
−
23 (TO
−
236)
CASE 318
G
ESD
1
STYLE 6
Human Body Model
Machine Model
> 8000
> 400
x1x =
Device Code
THERMAL CHARACTERISTICS
Characteristic
M1F = MMBT5550LT
G1 = MMBT5551LT
= Date Code*
Symbol
Max
Unit
M
T
o
tal Device Dissipation FR
−
5 Board
P
D
G
= Pb
−
Free Package
(Note: Microdot may be in either location)
225
1.8
mW
mW/
°
C
A
Derate Above 25
°
C
Thermal Resistance, Junction
−
to
−
Ambient
T
o
tal Device Dissipation Alumina
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
R
556
°
C/W
q
JA
P
D
300
2.4
mW
mW/
°
C
A
Derate Above 25
°
C
Thermal Resistance, Junction
−
to
−
Ambient
Junction and Storage
T
e
mperature
ORDERING INFORMATION
R
417
°
C/W
°
C
†
q
JA
Device
Package
Shipping
T , T
−
55 to +150
MMBT5550
L
T
1G,
SOT
−
23
3,000 /
T
a
pe &
Reel
J
stg
NSVMMBT5550
L
T
1G (Pb
−
Free)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR
−
5 = 1.0
ꢀ
0.75
ꢀ
0.062 in.
MMBT5550
L
T
3G
MMBT5551
L
T
1G
SOT
−
23 10,000
/
T
a
pe &
(Pb
−
Free)
Reel
SOT
−
23
3,000 /
T
a
pe &
Reel
2. Alumina
= 0.4
ꢀ
0.3
ꢀ
0.024 in. 99.5% alumina.
(Pb
−
Free)
SMMBT5551
L
T
1G
MMBT5551
L
T
3G
SMMBT5551
L
T
3G
SOT
−
23
(Pb
−
Free)
3,000 /
T
a
pe &
Reel
SOT
−
23 10,000
/
T
a
pe &
(Pb
−
Free) Reel
SOT
−
23 10,000
/
T
a
pe &
(Pb
−
Free) Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 1994
1
Publication Order Number:
May, 2020
−
Rev. 13
MMBT5550
L
T
1/D
MMBT5550L, MMBT5551L
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
V
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
(I =
1.0 mAdc, I
= 0)
MMBT5550
MMBT5551
140
160
−
−
C
B
Collecto
r
−
Base Breakdown Voltage
(I =
100
m
Adc, I
= 0)
V
V
Vdc
Vdc
MMBT5550
MMBT5551
160
180
−
−
C
E
Emitte
r
−
Base Breakdown Voltage
(I =
10
m
Adc, I
= 0)
6.0
−
E
C
Collector Cutoff Current
(V =
100 Vdc, I
= 0)
I
CBO
MMBT5550
MMBT5551
MMBT5550
MMBT5551
−
−
−
−
100
50
100
50
nAdc
CB
E
(V =
120 Vdc, I
= 0)
CB
E
(V =
100 Vdc, I
= 0, T
= 100
°
C)
m
Adc
CB
E
A
A
(V =
120 Vdc, I
= 0, T
= 100
°
C)
CB
E
Emitter Cutoff Current
(V =
4.0 Vdc, I
= 0)
I
nAdc
EBO
−
50
EB
C
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I =
1.0 mAdc, V
= 5.0 Vdc)
MMBT5550
MMBT5551
MMBT5550
MMBT5551
MMBT5550
MMBT5551
60
80
60
80
20
30
−
−
C
CE
(I =
10 mAdc, V
= 5.0 Vdc)
C
250
250
−
CE
(I =
50 mAdc, V
= 5.0 Vdc)
C
CE
−
Collecto
r
−
Emitter Saturation Voltage
(I =
10 mAdc, I
= 1.0 mAdc)
V
Vdc
Vdc
nA
CE(sat)
Both Types
MMBT5550
MMBT5551
−
−
−
0.15
0.25
0.20
C
B
(I =
50 mAdc, I
= 5.0 mAdc)
C
B
Bas
e
−
Emitter Saturation Voltage
(I =
10 mAdc, I
= 1.0 mAdc)
V
BE(sat)
Both Types
MMBT5550
MMBT5551
−
−
−
1.0
1.2
1.0
C
B
(I =
50 mAdc, I
= 5.0 mAdc)
C
B
Collector Emitter Cut
−
off
(V =
10 V)
I
CES
Both Types
−
−
50
100
CB
(V =
75 V)
CB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse
T
e
st: Pulse Width = 300
m
s, Duty Cycle = 2.0%.
2
MMBT5550L, MMBT5551L
TYPICAL CHARACTERISTICS
500
300
200
V
V
= 1.0 V
= 5.0 V
CE
T =
125
°
C
J
CE
25
°
C
-ꢀ55
°
C
100
50
30
20
10
7.0
5.0
0.1
0.2
0.3
0.5
0.7
1.0
3.0
2.0
5.0
7.0
10
20
30
50
70
100
I ,
COLLECTOR CURRENT (mA)
C
Figure 1. DC Current Gain
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
I
C
= 1.0 mA
10 mA
30 mA
100 mA
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
I ,
BASE CURRENT (mA)
B
Figure 2. Collector Saturation Region
1
10
0.30
V
CE
= 30 V
I /I
= 10
C B
0
10
0.25
0.20
0.15
0.10
0.05
0
150
°
C
25
°
C
T =
125
°
C
-1
J
10
I
C
= I
CES
-2
10
10
75
°
C
REVERSE
-3
FORWARD
-55
°
C
25
°
C
-4
10
10
-5
0.4 0.3 0.2
0.1
0
0.1
0.2 0.3
0.4 0.5 0.6
0.0001
0.001
0.01
0.1
V
BE
, BASE-EMITTER VOLTAGE (VOLTS)
I ,
COLLECTOR CURRENT (A)
C
Figure 3. Collector Cut
−
Off Region
Figure 4. V
CE(sat)
3
MMBT5550L, MMBT5551L
TYPICAL CHARACTERISTICS
1.10
1.00
0.90
0.80
0.70
0.60
0.50
0.40
0.30
0.20
1.10
I /I
= 10
C B
V
CE
= 10 V
-55
°
C
1.00
0.90
0.80
0.70
0.60
0.50
0.40
0.30
0.20
-55
°
C
25
°
C
25
°
C
150
°
C
150
°
C
0.0001
0.001
0.01
0.1
0.0001
0.001
0.01
0.1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 5. V
BE(sat)
Figure 6. V
BE(on)
100
2.5
2.0
1.5
70
50
T =
25
°
C
J
T =
–
5
5
°
C to +135
°
C
J
30
20
1.0
0.5
0
q
for V
CE(sat)
VC
10
C
ibo
7.0
5.0
–
0
.5
–
1
.0
–
1
.5
–
2
.0
–
2
.5
q
for V
BE(sat)
VB
C
3.0
2.0
obo
1.0
0.1
0.2 0.3
0.5 1.0 2.0
3.0 5.0
10 20
30 50
100
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
10
20
I ,
COLLECTOR CURRENT (mA)
C
V ,
REVERSE VOLTAGE (VOLTS)
R
Figure 7. Temperature Coefficients
Figure 8. Capacitances
V
V
CC
30 V
BB
-ꢀ8.8 V
10.2 V
V
in
100
R
3.0 k
R
C
0.25
m
F
10
m
s
INPUT PULSE
B
V
out
5.1 k
100
t , t
≤
10 ns
1N914
r
f
DUTY CYCLE = 1.0%
V
in
Values Shown are for I
@ 10 mA
C
Figure 9. Switching Time Test Circuit
4
MMBT5550L, MMBT5551L
TYPICAL CHARACTERISTICS
1000
100
10
1
V
= 1 V
CE
T =
25
°
C
A
10 mS
0.1
0.01
1.0 S
1
0.001
0.1
1.0
10
100
1000
1.0
10
, COLLECTOR EMITTER VOLTAGE (V)
CE
100
1000
I ,
COLLECTOR CURRENT (mA)
C
V
Figure 10. Current Gain Bandwidth Product
Figure 11. Safe Operating Area
100
1000
500
I /I
= 10
C B
70
50
T =
25
°
C
J
T =
25
°
C
J
t @
V =
120 V
r CC
30
20
300
200
t @
V =
30 V
r CC
10
100
50
C
ibo
7.0
5.0
t @
V
d
= 1.0 V
EB(off)
C
3.0
2.0
obo
30
20
V
CC
= 120 V
1.0
10
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
10
20
0.2 0.3
0.5 1.0
2.0 3.0
5.0 10
20 30
50 100
200
V ,
REVERSE VOLTAGE (VOLTS)
R
I ,
COLLECTOR CURRENT (mA)
C
Figure 12. Capacitances
Figure 13. Turn
−
On Time
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT
−
23 (TO
−
236)
CASE 318
−
08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
NOTES:
D
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
0.25
3
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
T
H
E
E
1
2
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
°
NOM
1.00
0.06
0.44
0.14
2.90
1.30
1.90
0.43
0.54
2.40
−−−
MAX
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
°
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
°
L
1.11
0.10
0.50
0.20
3.04
1.40
2.04
0.55
0.69
2.64
10
°
3X
b
L1
VIEW C
e
TOP VIEW
L1
A
H
E
T
c
A1
SEE VIEW C
SIDE VIEW
GENERIC
MARKING DIAGRAM*
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT
XXXM
G
G
1
3X
0.90
XXX = Specific Device Code
2.90
M
= Date Code
G
= Pb
−
Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present.
3X
0.95
0.80
PITCH
DIMENSIONS: MILLIMETERS
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
STYLE 7:
PIN 1.
EMITTER
2. BASE
STYLE 8:
PIN 1.
BASE
2. EMITTER
3. COLLECTOR
PIN 1.
ANODE
2. NO
CONNECTION
3. CATHODE
3. COLLECTOR
STYLE 9:
PIN 1.
ANODE
2. ANODE
STYLE 10:
STYLE 11:
STYLE 12:
STYLE 13:
PIN 1.
SOURCE
2. DRAIN
STYLE 14:
PIN 1.
CATHODE
2. GATE
PIN 1.
DRAIN
2. SOURCE
3. GATE
PIN 1.
ANODE
PIN 1.
CATHODE
2. CATHODE
3. ANODE
2. CATHODE
3. CATHODE
−
ANODE
3. CATHODE
3. GATE
3. ANODE
STYLE 15:
STYLE 16:
STYLE 17:
PIN 1.
NO CONNECTION
2. ANODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1.
GATE
2. CATHODE
3. ANODE
PIN 1.
ANODE
2. CATHODE
3. CATHODE
PIN 1.
NO CONNECTION
PIN 1.
CATHODE
PIN 1.
CATHODE
2. ANODE
3. GATE
2. CATHODE
3. ANODE
2. ANODE
3. CATHODE
−
ANODE
3. CATHODE
STYLE 21:
STYLE 22:
STYLE 23:
PIN 1.
ANODE
2. ANODE
STYLE 24:
STYLE 25:
STYLE 26:
PIN 1.
GATE
2. SOURCE
3. DRAIN
PIN 1.
RETURN
2. OUTPUT
3. INPUT
PIN 1.
GATE
2. DRAIN
PIN 1.
ANODE
2. CATHODE
3. GATE
PIN 1.
CATHODE
2. ANODE
3. SOURCE
3. NO
CONNECTION
3. CATHODE
STYLE 27:
STYLE 28:
PIN 1.
CATHODE
2. CATHODE
3. CATHODE
PIN 1.
ANODE
2. ANODE
3. ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT
−
23 (TO
−
236)
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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