onsemi-MMBT5551M3T5G
| Part # | onsemi-MMBT5551M3T5G |
Download  | onsemi-MMBT5551M3T5G |
MMBT5551M3
NPN High Voltage
Transistor
The MMBT5551M3 device is a spin−off of our popular SOT−23
three−leaded device. It is designed for general purpose high voltage
applications and is housed in the SOT−723 surface mount package.
This device is ideal for low−power surface mount applications where
board space is at a premium.
COLLECTOR
3
Features
•
Reduces Board Space
•
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
1
BASE
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
2
EMITTER
Compliant
MAXIMUM RATINGS
MARKING
DIAGRAM
Rating
Collecto
r
−
E
mitter Voltage
Collecto
r
−
B
ase Voltage
Emitte
r
−
B
ase Voltage
Symbol Value
Unit
Vdc
V
V
V
160
180
6.0
60
CEO
CBO
EBO
3
SOT−723
CASE 631AA
STYLE 1
Vdc
AH M
Vdc
2
1
Collector Current − Continuous
THERMAL CHARACTERISTICS
Characteristic
I
C
mAdc
AH
= Specific Device Code
= Date Code
M
Symbol
Max
Unit
T
o
tal Device Dissipation
P
D
mW
265
2.1
mW/
°
C
T =
25
°
C
A
ORDERING INFORMATION
Derate above 25
°
C
†
Device
MMBT5551M3T5G
Package
Shipping
Thermal Resistance,
R
470
°
C/W
q
JA
SOT−723 8000
/
T
a
pe &
(Pb−Free) Reel
T
o
tal Device Dissipation
Derate above 25
°
C
P
640
5.1
mW
mW/
°
C
°
C/W
D
A
NSVMMBT5551M3T5G SOT−723
8000 /
T
a
pe &
(Pb−Free) Reel
Thermal Resistance, Junction−to−Ambient
R
195
q
JA
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
Junction and Storage
T
e
mperature
T , T
J
−
5
5 to
+150
°
C
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR
−
5
=
1
.0
ꢀ
0.75
ꢀ
0.062 in.
2. Alumina
= 0.4
ꢀ
0.3
ꢀ
0.024 in. 99.5% alumina.
©
Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
December, 2015 − Rev. 3
MMBT5551M3/D
MMBT5551M3
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
V
Vdc
Vdc
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
(I =
1.0 mAdc, I
= 0)
160
180
6.0
−
−
−
C
B
Collecto
r
−
B
ase Breakdown Voltage
(I =
100
m
Adc, I
= 0)
V
V
C
E
Emitte
r
−
B
ase Breakdown Voltage
(I =
10
m
Adc, I
= 0)
E
C
Collector Cutoff Current
(V =
120 Vdc, I
= 0)
I
CBO
−
−
100
100
nAdc
m
Adc
CB
E
(V =
120 Vdc, I
= 0, T
= 100
°
C)
CB
E
A
Emitter Cutoff Current
(V =
4.0 Vdc, I
= 0)
I
nAdc
EBO
−
50
EB
C
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I =
1.0 mAdc, V
= 5.0 Vdc)
80
80
30
−
250
−
C
CE
(I =
10 mAdc, V
= 5.0 Vdc)
C
CE
(I =
50 mAdc, V
= 5.0 Vdc)
C
CE
Collecto
r
−
E
mitter Saturation Voltage
(I =
10 mAdc, I
= 1.0 mAdc)
V
Vdc
Vdc
nA
CE(sat)
−
−
0.15
0.20
C
B
(I =
50 mAdc, I
= 5.0 mAdc)
C
B
Bas
e
−
E
mitter Saturation Voltage
(I =
10 mAdc, I
= 1.0 mAdc)
V
BE(sat)
−
−
1.0
1.0
C
B
(I =
50 mAdc, I
= 5.0 mAdc)
C
B
Collector Emitter Cut−off
(V =
10 V)
I
CES
−
−
50
100
CB
(V =
75 V)
CB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse
T
e
st: Pulse Width = 300
m
s, Duty Cycle = 2.0%.
2
MMBT5551M3
TYPICAL CHARACTERISTICS
500
300
200
V
V
= 1.0 V
= 5.0 V
CE
T =
125
°
C
J
CE
25
°
C
-ꢀ55
°
C
100
50
30
20
10
7.0
5.0
0.1
0.2
0.3
0.5
0.7
1.0
3.0
2.0
5.0
7.0
10
20
30
50
70
100
I ,
COLLECTOR CURRENT (mA)
C
Figure 1. DC Current Gain
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
I
C
= 1.0 mA
10 mA
30 mA
100 mA
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
I ,
BASE CURRENT (mA)
B
Figure 2. Collector Saturation Region
1
10
1.0
T =
25
°
C
J
V
CE
= 30 V
0
10
0.8
T =
125
°
C
J
V
@ I
/I =
10
C B
-1
BE(sat)
10
I
C
= I
CES
0.6
0.4
0.2
0
-2
10
10
75
°
C
REVERSE
-3
FORWARD
25
°
C
-4
10
10
V
@ I
/I =
10
C B
CE(sat)
-5
0.4 0.3 0.2
0.1
0
0.1
0.2 0.3
0.4 0.5 0.6
0.1 0.2
0.3 0.5
1.0 2.0
3.0 5.0
10 20
30 50
100
V
BE
, BASE-EMITTER VOLTAGE (VOLTS)
I ,
COLLECTOR CURRENT (mA)
C
Figure 3. Collector Cut−Off Region
Figure 4. “On” Voltages
3
MMBT5551M3
TYPICAL CHARACTERISTICS
2.5
2.0
1.5
T =
–
5
5
°
C to +135
°
C
J
1.0
0.5
0
V
V
CC
30 V
BB
-ꢀ8.8 V
10.2 V
q
for V
CE(sat)
VC
V
in
100
R
3.0 k
R
C
0.25
m
F
–
0
.5
–
1
.0
–
1
.5
–
2
.0
–
2
.5
10
m
s
INPUT PULSE
B
V
out
5.1 k
100
q
for V
BE(sat)
VB
t , t
≤
10 ns
1N914
r
f
DUTY CYCLE = 1.0%
V
in
0.1
0.2 0.3
0.5 1.0 2.0
3.0 5.0
10 20
30 50
100
Values Shown are for I
@ 10 mA
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 5. Temperature Coefficients
Figure 6. Switching Time Test Circuit
100
1000
500
I /I
= 10
C B
70
50
T =
25
°
C
J
T =
25
°
C
J
t @
V =
120 V
r CC
30
20
300
200
t @
V =
30 V
r CC
10
100
50
C
ibo
7.0
5.0
t @
V
d
= 1.0 V
EB(off)
C
3.0
2.0
obo
30
20
V
CC
= 120 V
1.0
10
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
10
20
0.2 0.3
0.5 1.0 2.0
3.0 5.0
10
20 30
50 100
200
V ,
REVERSE VOLTAGE (VOLTS)
R
I ,
COLLECTOR CURRENT (mA)
C
Figure 7. Capacitances
Figure 8. Turn−On Time
1
5000
I /I
= 10
B
t @
V =
120 V
f CC
C
1 s
100 ms
10 ms
1 ms
100
m
s 10
m
s
3000
2000
T =
25
°
C
J
t @
V =
30 V
f CC
0.1
0.01
1000
500
300
200
t @
V =
120 V
s CC
100
50
0.001
1
10
100
0.2 0.3
0.5 1.0 2.0
3.0 5.0
10
20 30
50
100 200
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
I ,
COLLECTOR CURRENT (mA)
C
Figure 9. Turn−Off Time
Figure 10. Safe Operating Area
4
MMBT5551M3
PACKAGE DIMENSIONS
SOT−723
CASE 631AA
ISSUE D
NOTES:
−X−
E
1. DIMENSIONING
AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
D
A
b1
−Y−
3
H
E
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
1
2
MILLIMETERS
2X
b
C
DIM MIN
NOM
0.50
MAX
0.55
0.27
0.37
0.17
1.25
0.85
2X
e
0.08 X
Y
A
b
b1
C
D
E
0.45
0.15
0.25
0.07
1.15
0.75
SIDE VIEW
0.21
0.31
0.12
1.20
TOP VIEW
3X
L
1
0.80
0.40 BSC
e
H
E
L
L2
1.15
0.15
1.20
0.29 REF
0.20
1.25
0.25
STYLE 1:
3X
L2
PIN 1.
BASE
2. EMITTER
3. COLLECTOR
RECOMMENDED
SOLDERING FOOTPRINT*
BOTTOM VIEW
2X
0.40
2X
0.27
PACKAGE
OUTLINE
1.50
3X
0.52
0.36
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at
www.onsemi.com/site/pdf/Patent−Marking.pdf
. SCILLC
reserves the right to make changes without further notice to any products herein.
SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time.
All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts.
SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur.
Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part.
SCILLC is an Equal Opportunity/Affirmative Action Employer.
This literature is subject to all applicable
copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
N. American Technical Support
: 800−282−9855
T
o
ll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone
: 303−675−2175 or 800−344−3860
T
o
ll Free USA/Canada
Fax
: 303−675−2176 or 800−344−3867
T
o
ll Free USA/Canada
Email
: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
MMBT5551M3/D
