onsemi-MMBT8099LT1G
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MMBT8099LT1G
Amplifier
T
r
ansistor
NPN Silicon
Features
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
COLLECTOR
3
MAXIMUM RATINGS
1
Rating
Symbol
Value
Unit
BASE
Collector-Emitter Voltage
V
V
V
80
Vdc
CEO
2
Collector-Base Voltage
Emitter-Base Voltage
80
6.0
500
Vdc
Vdc
CBO
EBO
EMITTER
Collector Current − Continuous
I
C
mAdc
3
THERMAL CHARACTERISTICS
Characteristic
1
Symbol
Max
Unit
2
T
o
tal Device Dissipation FR−5 Board
P
D
225
1.8
mW
mW/
°
C
A
Derate above 25
°
C
SOT−23 (TO−236)
CASE 318
Thermal Resistance, Junction-to-Ambient
R
556
°
C/W
q
JA
STYLE 6
T
o
tal Device Dissipation Alumina
P
D
300
2.4
mW
mW/
°
C
A
MARKING DIAGRAM
Thermal Resistance, Junction-to-Ambient
R
417
°
C/W
q
JA
KB M
G
G
Junction and Storage
T
e
mperature Range
T , T
−55 to +150
°
C
J
stg
1
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5
= 1.0 X 0.75 X 0.062 in.
KB
M
G
= Specific Device Code
= Date Code*
= Pb−Free Package
2. Alumina
= 0.4 X 0.3 X 0.024 in. 99.5% alumina.
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
†
Device
Package
Shipping
MMBT8099
L
T
1G
SOT−23
3000/
T
a
pe & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
October, 2016 − Rev. 3
MMBT8099
L
T
1/D
MMBT8099LT1G
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
V
Vdc
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
(I =
10 mAdc, I
= 0)
80
80
6.0
−
−
−
C
B
Collecto
r
−
B
ase Breakdown Voltage
(I =
100
m
Adc, I
= 0)
V
V
C
E
Emitte
r
−
B
ase Breakdown Voltage
(I =
10
m
Adc, I
= 0)
Vdc
−
E
C
Collector Cutoff Current
(V =
60 Vdc, I
= 0)
I
m
Adc
m
Adc
CES
0.1
CE
B
Collector Cutoff Current
(V =
60 Vdc, I
= 0)
I
CBO
−
−
0.1
−
CB
E
(V =
80 Vdc, I
= 0)
CB
E
Emitter Cutoff Current
(V =
6.0 Vdc, I
= 0)
I
m
Adc
EBO
−
−
0.1
−
EB
C
(V =
4.0 Vdc, I
= 0)
EB
C
DC Current Gain
h
FE
−
(I =
1.0 mAdc, V
= 5.0 Vdc)
100
100
75
300
−
−
C
CE
(I =
10 mAdc, V
= 5.0 Vdc)
C
CE
(I =
100 mAdc, V
= 5.0 Vdc)
C
CE
Collecto
r
−
E
mitter Saturation Voltage
(I =
100 mAdc, I
= 5.0 mAdc)
V
Vdc
Vdc
CE(sat)
−
−
0.4
0.3
C
B
(I =
100 mAdc, I
= 10 mAdc)
C
B
Base−Emitter On Voltage
(I =
1.0 mAdc, V
= 5.0 Vdc)
V
BE(on)
−
−
C
CE
(I =
10 mAdc, V
= 5.0 Vdc)
0.6
0.8
C
CE
SMALL
−
S
IGNAL CHARACTERISTICS
Curren
t
−
G
ain − Bandwidth Product
f
MHz
pF
T
(I =
10 mAdc, V
= 5.0 Vdc, f = 100 MHz)
150
−
−
C
CE
Output Capacitance
C
obo
(V =
5.0 Vdc, I
= 0, f = 1.0 MHz)
6.0
CB
E
Input Capacitance
C
pF
ibo
(V =
0.5 Vdc, I
= 0, f = 1.0 MHz)
EB
−
25
C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse
T
e
st: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
2
MMBT8099LT1G
TURN-ON TIME
TURN-OFF TIME
V
V
+V
CC
CC
-1.0 V
BB
+40 V
+40 V
5.0
m
s
100
R
100
R
L
L
OUTPUT
OUTPUT
+10 V
0
V
in
R
V
in
R
B
B
t =
3.0 ns
r
* C
t
6.0 pF
* C
t
6.0 pF
S
S
5.0
m
F
5.0
m
F
100
100
5.0
m
s
t =
3.0 ns
r
*
T
o
tal Shunt Capacitance of
T
e
st Jig and Connectors
For PNP
T
e
st Circuits, Reverse All Voltage Polarities
Figure 1. Switching Time Test Circuits
300
200
40
T =
25
°
C
J
T =
25
°
C
J
20
5.0 V
V
CE
= 1.0 V
C
ibo
100
70
10
8.0
6.0
4.0
50
C
obo
30
2.0
1.0
2.0 3.0
5.0 7.0
10
20 30
50 70 100
0.1 0.2
0.5 1.0 2.0
5.0
10
20
50 100
I ,
COLLECTOR CURRENT (mA)
C
V ,
REVERSE VOLTAGE (VOLTS)
R
Figure 2. Current−Gain − Bandwidth Product
Figure 3. Capacitance
1.0 k
700
500
1.0 k
700
500
V
CC
I /I
= 10
= 40 V
t
s
C
B
I =
I
B1 B2
T =
25
°
C
J
300
200
300
200
100
70
100
70
t
50
f
50
CURRENT LIMIT
THERMAL LIMIT
30
20
30
20
SECOND BREAKDOWN LIMIT
t
r
t @
V
d
= 0.5 V
DUTY CYCLE
≤
10%
2.0 3.0
5.0 7.0
10
BE(off)
10
10
1.0
10
20
30
50
70
100
200
20 30
50 70 100
I ,
COLLECTOR CURRENT (mA)
C
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 4. Switching Times
Figure 5. Active−Region Safe Operating Area
3
MMBT8099LT1G
400
200
1.0
T =
25
°
C
J
T =
125
°
C
J
0.8
0.6
V
@ I
/I =
10
C B
25
°
C
-55
°
C
BE(sat)
V
BE
@ V
= 5.0 V
CE
100
80
0.4
0.2
0
V
CE
= 5.0 V
60
V
@ I
/I =
10
C B
CE(sat)
40
0.2 0.3
0.5 1.0 2.0
3.0 5.0
10 20
30 50
100 200
0.2
0.5 1.0 2.0
5.0
10
20
50 100
200
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 6. DC Current Gain
Figure 7. “ON” Voltages
2.0
1.6
1.2
-1.0
-1.4
-1.8
-2.2
T =
25
°
C
J
I =
C
200 mA
I =
C
20 mA
I =
C
50 mA
I =
C
100 mA
R
FOR V
BE
q
VB
-55
°
C TO 125
°
C
0.8
0.4
0
-2.6
-3.0
I =
C
10 mA
0.2
0.5 1.0 2.0
5.0 10
20
50 100
200
0.02
0.05 0.1
0.2
0.5 1.0 2.0
5.0 10
20
I ,
BASE CURRENT (mA)
B
I ,
COLLECTOR CURRENT (mA)
C
Figure 8. Collector Saturation Region
Figure 9. Base−Emitter Temperature Coefficient
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
0.05
Z
T
Z
T
(t) = r(t)
•
R
q
q
JC
JC
– T
= P
Z
q
(pk) JC
(t)
J(pk)
C
0.1
0.07
0.05
P
(pk)
0.01
(t) = r(t)
•
R
q
JA
0.02
SINGLE PULSE
q
JA
– T
= P
Z
(t)
q
(pk) JA
J(pk)
A
t
1
D CURVES APPLY FOR
POWER PULSE TRAIN
SHOWN READ TIME AT t
(SEE AN469)
SINGLE PULSE
0.03
0.02
t
2
1
DUTY CYCLE, D = t
/t
1
2
0.01
1.0
2.0
5.0
10
20
50
100
200
t, TIME (ms)
500
1.0 k
2.0 k
5.0 k
10 k
20 k
50 k
100 k
Figure 10. Thermal Response
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT
−
23 (TO
−
236)
CASE 318
−
08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
NOTES:
D
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
0.25
3
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
T
H
E
E
1
2
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
°
NOM
1.00
0.06
0.44
0.14
2.90
1.30
1.90
0.43
0.54
2.40
−−−
MAX
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
°
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
°
L
1.11
0.10
0.50
0.20
3.04
1.40
2.04
0.55
0.69
2.64
10
°
3X
b
L1
VIEW C
e
TOP VIEW
L1
A
H
E
T
c
A1
SEE VIEW C
SIDE VIEW
GENERIC
MARKING DIAGRAM*
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT
XXXM
G
G
1
3X
0.90
XXX = Specific Device Code
2.90
M
= Date Code
G
= Pb
−
Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present.
3X
0.95
0.80
PITCH
DIMENSIONS: MILLIMETERS
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
STYLE 7:
PIN 1.
EMITTER
2. BASE
STYLE 8:
PIN 1.
BASE
2. EMITTER
3. COLLECTOR
PIN 1.
ANODE
2. NO
CONNECTION
3. CATHODE
3. COLLECTOR
STYLE 9:
PIN 1.
ANODE
2. ANODE
STYLE 10:
STYLE 11:
STYLE 12:
STYLE 13:
PIN 1.
SOURCE
2. DRAIN
STYLE 14:
PIN 1.
CATHODE
2. GATE
PIN 1.
DRAIN
2. SOURCE
3. GATE
PIN 1.
ANODE
PIN 1.
CATHODE
2. CATHODE
3. ANODE
2. CATHODE
3. CATHODE
−
ANODE
3. CATHODE
3. GATE
3. ANODE
STYLE 15:
STYLE 16:
STYLE 17:
PIN 1.
NO CONNECTION
2. ANODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1.
GATE
2. CATHODE
3. ANODE
PIN 1.
ANODE
2. CATHODE
3. CATHODE
PIN 1.
NO CONNECTION
PIN 1.
CATHODE
PIN 1.
CATHODE
2. ANODE
3. GATE
2. CATHODE
3. ANODE
2. ANODE
3. CATHODE
−
ANODE
3. CATHODE
STYLE 21:
STYLE 22:
STYLE 23:
PIN 1.
ANODE
2. ANODE
STYLE 24:
STYLE 25:
STYLE 26:
PIN 1.
GATE
2. SOURCE
3. DRAIN
PIN 1.
RETURN
2. OUTPUT
3. INPUT
PIN 1.
GATE
2. DRAIN
PIN 1.
ANODE
2. CATHODE
3. GATE
PIN 1.
CATHODE
2. ANODE
3. SOURCE
3. NO
CONNECTION
3. CATHODE
STYLE 27:
STYLE 28:
PIN 1.
CATHODE
2. CATHODE
3. CATHODE
PIN 1.
ANODE
2. ANODE
3. ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT
−
23 (TO
−
236)
PAGE 1 OF 1
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o
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