onsemi-MMBTA06LT1
| Part # | onsemi-MMBTA06LT1 |
Download  | onsemi-MMBTA06LT1 |
MMBTA05L, MMBTA06L
Driver
T
r
ansistors
NPN Silicon
Features
•
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
COLLECTOR
3
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
BASE
MAXIMUM RATINGS
2
Rating
Symbol
Value
Unit
EMITTER
Collecto
r
−
E
mitter Voltage
V
CEO
V
CBO
V
EBO
Vdc
MMBTA05L
MMBTA06L
60
80
3
Collecto
r
−
B
ase Voltage
Emitte
r
−
B
ase Voltage
Vdc
1
MMBTA05L
MMBTA06L
60
80
2
SOT−23
CASE 318
STYLE 6
4.0
Vdc
Collector Current − Continuous
Electrostatic Discharge
I
500
mAdc
C
ESD
HBM Class 3B
MM Class C
CDM Class IV
MARKING DIAGRAMS
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1H M
G
1GM M
G
G
G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
MMBTA05LT1
MMBTA06LT1,
SMMBTA06L
T
o
tal Device Dissipation FR
−
5
P
D
225
mW
Derate above 25
°
C
1H, 1GM
= Specific Device Code
A
1.8
mW/
°
C
°
C/W
M
G
= Date Code*
= Pb−Free Package
Thermal Resistance,
Junction−to−Ambient
R
556
q
JA
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
T
o
tal Device Dissipation Alumina
P
D
300
mW
A
Derate above 25
°
C
2.4
mW/
°
C
°
C/W
ORDERING INFORMATION
See detailed ordering and shipping information in the package
Thermal Resistance,
Junction−to−Ambient
R
417
q
JA
Junction and Storage
T
e
mperature
T , T
−
5
5 to +150
°
C
J
stg
1. FR
−
5
=
1
.0
ꢀ
0.75
ꢀ
0.062 in.
2. Alumina
= 0.4
ꢀ
0.3
ꢀ
0.024 in. 99.5% alumina.
©
Semiconductor Components Industries, LLC, 1994
1
Publication Order Number:
October, 2016 − Rev. 10
MMBTA05LT1/D
MMBTA05L, MMBTA06L
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
V
Vdc
(BR)CEO
(I =
1.0 mAdc, I
= 0)
MMBTA05L
MMBTA06L
60
80
−
−
C
B
Emitte
r
−
B
ase Breakdown Voltage
(I =
100
m
Adc, I
= 0)
V
4.0
−
Vdc
m
Adc
m
Adc
(BR)EBO
E
C
Collector Cutoff Current
(V =
60 Vdc, I
= 0)
I
−
0.1
CES
CE
B
Collector Cutoff Current
(V =
60 Vdc, I
= 0)
I
CBO
MMBTA05L
MMBTA06L
−
−
0.1
0.1
CB
E
(V =
80 Vdc, I
= 0)
CB
E
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I =
10 mAdc, V
= 1.0 Vdc)
100
100
−
−
C
CE
(I =
100 mAdc, V
= 1.0 Vdc)
C
CE
Collecto
r
−
E
mitter Saturation Voltage
(I =
100 mAdc, I
= 10 mAdc)
V
−
0.25
Vdc
Vdc
CE(sat)
C
B
Bas
e
−
E
mitter On Voltage
(I =
100 mAdc, V
= 1.0 Vdc)
V
BE(on)
−
1.2
C
CE
SMALL
−
S
IGNAL CHARACTERISTICS
f
T
100
−
MHz
(I =
10 mA, V
= 2.0
V
, f =
1
00 MHz)
C
CE
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse
T
e
st: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
4. f is
defined as the frequency at which |h
| extrapolates to unity.
T
fe
TURN-ON TIME
TURN-OFF TIME
V
V
+V
CC
CC
-1.0 V
BB
+40 V
+40 V
5.0
m
s
100
R
100
R
L
L
OUTPUT
OUTPUT
+10 V
0
V
in
R
V
in
R
B
B
t =
3.0 ns
r
* C
t
6.0 pF
* C
t
6.0 pF
S
S
5.0
m
F
5.0
m
F
100
100
5.0
m
s
t =
3.0 ns
r
*
T
o
tal Shunt Capacitance of
T
e
st Jig and Connectors
For PNP
T
e
st Circuits, Reverse All Voltage Polarities
Figure 1. Switching Time Test Circuits
2
MMBTA05L, MMBTA06L
1000
100
10
100
T =
25
°
C
A
C
V
= 2.0 V
ibo
CE
T =
25
°
C
A
C
obo
10
1
0.1
1
10
100
1000
1
10
100
I ,
COLLECTOR CURRENT (mA)
C
V ,
REVERSE VOLTAGE (V)
R
Figure 2. Current Gain Bandwidth Product vs.
Collector Current
Figure 3. Capacitance
1000
100
10
1.0 k
700
500
T =
150
°
C
A
V
= 1.0 V
CE
t
s
T =
25
°
C
A
300
200
T =
−55
°
C
A
100
70
t
f
50
V
CC
I /I
= 10
= 40 V
30
20
t
C B
r
I =
I
B1 B2
t @
V
d
= 0.5 V
BE(off)
T =
25
°
C
J
10
0.1
1
10
100
1000
5.0 7.0 10
20 30
50 70 100
200 300
500
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 4. Switching Time
Figure 5.
DC Current Gain vs. Collector
Current
1
1.2
1.1
I /I
= 10
I /I
= 10
C
B
C
B
1.0
0.9
0.8
0.7
0.6
0.5
0.4
T =
−55
°
C
A
T =
150
°
C
A
0.1
T =
25
°
C
A
T =
25
°
C
A
T =
150
°
C
A
T =
−55
°
C
A
0.3
0.2
0.1
0.01
0.1
1
10
100
1000
1
10
100
1000
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 6. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 7. Base Emitter Saturation Voltage vs.
Collector Current
3
MMBTA05L, MMBTA06L
1.1
1
1.0
0.8
0.6
0.4
V
CE
= 1 V
T =
25
°
C
A
I
=
C
I
=
C
I
=
T =
−55
°
C
C
A
100 mA
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
50 mA
250 mA
I
C
=
500 mA
T =
25
°
C
A
I
C
=
10 mA
T =
150
°
C
A
0.2
0
0.1
1
10
100
1000
0.01
0.1
1
10
100
I ,
COLLECTOR CURRENT (mA)
C
I ,
BASE CURRENT (mA)
B
Figure 8. Base Emitter Turn−ON Voltage vs.
Collector Current
Figure 9. Saturation Region
−0.8
−1.2
−1.6
−2.0
10000
1000
100
10
MMBTA06L
10 ms
1 ms
100 ms
1 s
Thermal Limit
R
for V
BE
q
VB
−2.4
−2.8
Single Pulse at T
= 25
°
C
A
1
0.1
1
10
100
0.5 1.0
2.0
5.0
10 20
50
100 200
500
I ,
COLLECTOR CURRENT (mA)
C
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
Figure 10. Base−Emitter Temperature
Coefficient
Figure 11. Safe Operating Area
10000
MMBTA05L
100 ms
10 ms
1000
100
1 ms
1 s
Thermal Limit
10
1
Single Pulse at T
= 25
°
C
A
0.1
1
10
100
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
Figure 12. Safe Operating Area
4
MMBTA05L, MMBTA06L
ORDERING INFORMATION
Device
†
Package
Shipping
MMBTA05LT1G
SOT−23
(Pb−Free)
3,000 /
T
a
pe & Reel
3,000 /
T
a
pe & Reel
10,000 /
T
a
pe & Reel
3,000 /
T
a
pe & Reel
3,000 /
T
a
pe & Reel
10,000 /
T
a
pe & Reel
10,000 /
T
a
pe & Reel
NSVMMBTA05LT1G*
MMBTA05LT3G
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
MMBTA06LT1G
SOT−23
(Pb−Free)
SMMBTA06LT1G*
MMBTA06LT3G
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SMMBTA06LT3G*
SOT−23
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
*S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable.
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT
−
23 (TO
−
236)
CASE 318
ISSUE AT
DATE 01 MAR 2023
SCALE 4:1
GENERIC
MARKING DIAGRAM*
XXXM
G
G
1
XXX = Specific Device Code
M
= Date Code
G
= Pb
−
Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLES ON PAGE 2
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT
−
23 (TO
−
236)
PAGE 1 OF 2
onsemi
and
are trademarks of Semiconductor Components Industries, LLC dba
onsemi
or its subsidiaries in the United States and/or other countries.
onsemi
reserves
the right to make changes without further notice to any products herein.
onsemi
makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does
onsemi
assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages.
onsemi
does not convey any license under its patent rights nor the rights of others.
©
Semiconductor Components Industries, LLC, 2019
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT
−
23 (TO
−
236)
CASE 318
ISSUE AT
DATE 01 MAR 2023
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
STYLE 7:
PIN 1.
EMITTER
2. BASE
STYLE 8:
PIN 1.
BASE
PIN 1.
ANODE
2. EMITTER
3. COLLECTOR
2. NO
CONNECTION
3. CATHODE
3. COLLECTOR
STYLE 9:
PIN 1.
ANODE
2. ANODE
STYLE 10:
STYLE 11:
PIN 1.
ANODE
2. CATHODE
STYLE 12:
STYLE 13:
PIN 1.
SOURCE
2. DRAIN
STYLE 14:
PIN 1.
CATHODE
2. GATE
PIN 1.
DRAIN
2. SOURCE
3. GATE
PIN 1.
CATHODE
2. CATHODE
3. ANODE
3. CATHODE
3. CATHODE
−
ANODE
3. GATE
3. ANODE
STYLE 15:
STYLE 16:
STYLE 17:
PIN 1.
NO CONNECTION
2. ANODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1.
CATHODE
2. ANODE
PIN 1.
GATE
2. CATHODE
3. ANODE
PIN 1.
ANODE
2. CATHODE
3. CATHODE
PIN 1.
NO CONNECTION
PIN 1.
CATHODE
2. CATHODE
3. ANODE
2. ANODE
3. CATHODE
−
ANODE
3. CATHODE
3. GATE
STYLE 21:
STYLE 22:
STYLE 23:
PIN 1.
ANODE
2. ANODE
STYLE 24:
STYLE 25:
STYLE 26:
PIN 1.
GATE
2. SOURCE
3. DRAIN
PIN 1.
RETURN
2. OUTPUT
3. INPUT
PIN 1.
GATE
2. DRAIN
PIN 1.
ANODE
2. CATHODE
3. GATE
PIN 1.
CATHODE
2. ANODE
3. SOURCE
3. NO
CONNECTION
3. CATHODE
STYLE 27:
STYLE 28:
PIN 1.
CATHODE
2. CATHODE
3. CATHODE
PIN 1.
ANODE
2. ANODE
3. ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT
−
23 (TO
−
236)
PAGE 2 OF 2
onsemi
and
are trademarks of Semiconductor Components Industries, LLC dba
onsemi
or its subsidiaries in the United States and/or other countries.
onsemi
reserves
the right to make changes without further notice to any products herein.
onsemi
makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does
onsemi
assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages.
onsemi
does not convey any license under its patent rights nor the rights of others.
©
Semiconductor Components Industries, LLC, 2019
onsemi
,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates
and/or subsidiaries in the United States and/or other countries.
onsemi
owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of
onsemi
’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
.
onsemi
reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as
−
is” and
onsemi
makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does
onsemi
assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using
onsemi
products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by
onsemi
. “Typical” parameters which may be provided in
onsemi
data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
onsemi
does not convey any license
under any of its intellectual property rights nor the rights of others.
onsemi
products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use
onsemi
products for any such unintended or unauthorized application, Buyer shall indemnify and hold
onsemi
and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that
onsemi
was negligent regarding the design or manufacture of the part.
onsemi
is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS
:
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