onsemi-MMBTA28

Part #onsemi-MMBTA28
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onsemi-MMBTA28
DATA SHEET  
NPN Darlington
T
r
ansistor  
PZTA28, MMBTA28  
MARKING DIAGRAM  
C
E
AYW  
A28  
C
B
Description  
SOT−223  
CASE 318H  
This device is designed for applications requiring extremely high  
current gain at collector currents to 500 mA. Sourced from process 03.  
A
YW  
A28  
= Assembly Location  
= Date Code  
= Specific Device Code  
Features  
•
These are Pb−Free Devices  
ABSOLUTE MAXIMUM RATINGS
(T =
 
25
°
C unless otherwise noted)  
A
MARKING DIAGRAM  
C
Symbol  
Parameter  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
Value  
Unit  
V
E
V
CEO  
V
CBO  
V
EBO  
80  
3SS M  
B
80  
12  
V
SOT−23/SUPERSOT−23  
CASE 527AG  
V
I
Collector Current − Continuous  
800  
mA  
°
C  
C
3SS  
M
= Specific Device Code  
= Date Code  
T , T  
Operating and Storage Junction  
T
e
mperature Range  
−55 to + 150  
J
STG  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
ORDERING INFORMATION  
1. These
 
ratings are based on a maximum junction temperature of 150
°
C.  
2. These
 
are steady−state limits.
onsemi
should be consulted on applications  
involving pulsed or low−duty−cycle operations.  
†
Device  
Package  
Shipping  
PZTA28  
SOT−223  
SOT−23  
4000 /
T
a
pe & Reel  
3000 /
T
a
pe & Reel  
MMBTA28  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our
T
a
pe and Reel Packaging Specification  
Brochure, BRD8011/D.  
©
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
October, 2021 − Rev. 2  
PZTA28/D  
 

PZTA28, MMBTA28  
THERMAL CHARACTERISTICS
(T =
 
25
°
C unless otherwise noted)  
A
Max  
Symbol  
Parameter  
Unit  
mW  
P
D
T
o
tal Device Dissipation  
1000  
8.0  
350  
2.8  
Derate Above 25
_
C  
Thermal Resistance, Junction−to−Ambient  
mW/
_
C  
_
C/W  
R
125  
357  
q
JA  
3. PCB
 
size: FR−4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.  
4. Device
 
mounted on FR−4 PCB 36 mm x 18 mm x 1.5 mm; mounting pad for the collector lead minimum 6cm
 
.  
2
ELECTRICAL CHARACTERISTICS
(Note

= 25
°
C unless otherwise noted)  
A
Symbol  
Parameter  
Collector−Emitter Breakdown Voltage  
Collector−Base Breakdown Voltage  
Emitter−Base Breakdown Voltage  
Collector Cut−Off Current  
Test Conditions  
= 100
m
A, V
 
= 0  
Min  
80  
Max  
Unit  
V
I
I
I
V
V
(BR)CES  
(BR)CBO  
(BR)EBO  
C
C
E
BE  
V
V
= 100
m
A, I
 
= 0  
80  
E
= 10
m
A, I
 
= 0  
12  
V
C
I
V
V
V
= 60
V
, I
 
= 0  
100  
500  
100  
nA  
nA  
nA  
CBO  
CB  
CE  
EB  
E
I
Collector Cut−Off Current  
= 60
V
, V
 
= 0  
BE  
CES  
EBO  
I
Emitter Cut−Off Current  
= 10
V
, I
 
= 0  
C
h
DC Current Gain  
I
I
I
I
I
I
= 10 mA, V
 
= 5.0 V  
10000  
10000  
FE  
C
C
C
C
C
C
CE  
= 100 mA, V
 
= 5.0 V  
CE  
V
(sat)  
Collector−Emitter Saturation Voltage  
= 10 mA, I
 
= 0.01 mA  
1.2  
1.5  
2.0  
V
CE  
B
= 100 mA, I
 
= 0.1 mA  
B
V
Base−Emitter On Voltage  
Current Gain − Bandwidth Product  
Output Capacitance  
= 100 mA, V
 
= 5.0 V  
V
BE(on)  
CE  
f
= 15 mA, V
 
= 5.0
V
, f =
1
00 MHz  
125  
MHz  
pF  
T
CE  
C
V
= 1.0
V
, I
 
=
0
, f = 1.0 MHz  
8.0  
obo  
CB  
E
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
5. Pulse
 
test: pulse width
≤
300
m
s, duty cycle
≤
2.0%
.  
2
 

PZTA28, MMBTA28  
TYPICAL PERFORMANCE CHARACTERISTICS  
1.6  
100  
80  
60  
40  
20  
0
b
= 1000  
V
= 5 V  
CE  
125
°
C  
1.2  
25
°
C  
0.8  
125
°
C  
25
°
C  
−40
°
C  
0.4  
−40
°
C  
0
0.001  
0.01  
I ,
 
Collector Current (A)  
0.1  
0.2  
1
10  
100  
1000  
I ,
 
Collector Current (mA)  
C
C
Figure 2. Collector− Emitter Saturation  
Voltage vs. Collector Current  
Figure 1. Typical Pulsed Current Gain  
vs. Collector Current  
2
2
1.6  
1.2  
0.8  
0.4  
0
b
= 1000  
−40
°
C  
V
CE  
= 5 V  
1.6  
1.2  
0.8  
0.4  
0
−40
°
C  
25
°
C  
25
°
C  
125
°
C  
125
°
C  
1
10  
100  
1000  
1
10  
100  
1000  
I ,
 
Collector Current (mA)  
C
I ,
 
Collector Current (mA)  
C
Figure 4. Base−Emitter On Voltage  
vs. Collector Current  
Figure 3. Base−Emitter Saturation Voltage  
vs. Collector Current  
100  
10  
f = 1.0 MHz  
V
CB  
= 80 V  
20  
15  
C
ib  
10  
1
5
C
ob  
0.1  
0.01  
2
0.1  
25  
50  
75  
100  
125  
1
10  
100  
V
CE  
, Collector Voltage (V)  
T ,
 
Ambient
T
e
mperature (
°
C)  
A
Figure 6. Input and Output Capacitance  
vs. Reverse Voltage  
Figure 5. Collector Cut−Off Current  
vs. Ambient Temperature  
3

PZTA28, MMBTA28  
TYPICAL PERFORMANCE CHARACTERISTICS
(continued)  
400  
300  
200  
100  
0
114.2  
114  
V
CE  
= 5 V  
113.8  
113.6  
113.4  
113.2  
113  
112.8  
1
10  
20  
50  
100 200 300  
0.1  
1
10  
100  
1000  
Resistance (k
W
)  
I ,
 
Collector Current (mA)  
C
Figure 8. Collector−Emitter Breakdown  
Voltage with Resistance Between  
Emitter−Base  
Figure 7. Gain Bandwidth Product  
vs. Collector Current  
1
SOT−223  
0.75  
TO−92  
0.5  
SOT−23  
0.25  
0
0
25  
50  
75  
100  
125  
150  
T
e
mperature (
°
C)  
Figure 9. Power Dissipation vs.  
Ambient Temperature  
4

MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
SOT
−
223  
CASE 318H  
ISSUE B  
DATE 13 MAY 2020  
SCALE 2:1  
A
Y
W
= Assembly Location  
=
Y
e
ar  
= Work Week  
GENERIC  
MARKING DIAGRAM*  
XXXXX =
 
Specific Device Code  
G
= Pb
−
Free Package  
(Note: Microdot may be in either location)  
AYW  
XXXXX
G  
G
*This information is generic. Please refer to  
device data sheet for actual part marking.  
Pb
−
Free indicator, “G” or microdot “
G
”, may  
or may not be present. Some products may  
not follow the Generic Marking.  
1
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions
 
are uncontrolled
 
except when stamped
 
“CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98ASH70634A  
SOT
−
223  
PAGE 1 OF 1  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically  
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the  
rights of others.  
©
Semiconductor Components Industries, LLC, 2018  

MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
SOT
−
23/SUPERSOT
t
−
23, 3 LEAD, 1.4×2.9  
CASE 527AG  
ISSUE A  
DATE 09 DEC 2019  
GENERIC  
MARKING DIAGRAM*  
*This information is generic. Please refer to  
XXX =
 
Specific Device Code  
device data sheet for actual part marking.  
Pb
−
Free indicator, “G” or microdot “
G
”, may  
or may not be present. Some products may  
not follow the Generic Marking.  
M
= Month Code  
XXXM
G  
G
= Pb
−
Free Package  
G
(Note: Microdot may be in either location)  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions
 
are uncontrolled
 
except when stamped
 
“CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON34319E  
SOT
−
23/SUPERSOT
−
23, 3 LEAD, 1.4X2.9  
PAGE 1 OF 1  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically  
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the  
rights of others.  
©
Semiconductor Components Industries, LLC, 2019  

onsemi
,  
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates  
and/or subsidiaries in the United States and/or other countries.
onsemi
owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.  
A listing of
onsemi
’s product/patent coverage may be accessed at

.
onsemi
reserves the right to make changes at any time to any  
products or information herein, without notice. The information herein is provided “as
−
is” and
onsemi
makes no warranty, representation or guarantee regarding the accuracy of the  
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does
onsemi
assume any liability arising out of the application or use  
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products  
and applications using
onsemi
products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information  
provided by
onsemi
. “Typical” parameters which may be provided in
onsemi
data sheets and/or specifications can and do vary in different applications and actual performance may  
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
onsemi
does not convey any license  
under any of its intellectual property rights nor the rights of others.
onsemi
products are not designed, intended, or authorized for use as a critical component in life support systems  
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should  
Buyer purchase or use
onsemi
products for any such unintended or unauthorized application, Buyer shall indemnify and hold
onsemi
and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that
onsemi
was negligent regarding the design or manufacture of the part.
onsemi
is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMEN
T
:  
Email Requests to:

TECHNICAL SUPPORT  
North American Technical Support:  
Voice Mail: 1 800
−
282
−
9855
T
o
ll Free USA/Canada  
Phone: 011 421 33 790 2910  
Europe, Middle East and Africa Technical Support:  
Phone: 00421 33 790 2910  
For additional information, please contact your local Sales Representative  
onsemi Website:

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