onsemi-MMBTA55
| Part # | onsemi-MMBTA55 |
| Download | onsemi-MMBTA55 |
March 2014
MMBTA55
PNP General-Purpose Amplifier
Description
C
This device is designed for general-purpose amplifier
applications at collector currents to 300 mA. Sourced
from process 73.
E
SOT-23
Mark: 2H
B
Ordering Information
Part Number
Marking
Package
Packing Method
MMBTA55
2H
SOT-23 3L
T
a
pe and Reel
Absolute Maximum Ratings
(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
CEO
V
CBO
V
EBO
I
C
Parameter
Value
-60
Unit
V
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
-60
V
-4
V
Collector Current – Continuous
-500
mA
°
C
T
J ,
T
STG
Junction and Storage
T
e
mperature Range
Notes:
1. These ratings are based on a maximum junction temperature of 150
°
C.
-55 to +150
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
© 1997 Fairchild Semiconductor Corporation
MMBTA55 Rev. 1.1.0
1
Thermal Characteristics
(3)
Values are at T
A
= 25°C unless otherwise noted.
Symbol
P
D
Parameter
Max.
350
2.8
Unit
mW
T
o
tal Device Dissipation
Derate Above T
A
= 25°C
mW/°C
°
C/W
R
θ
JA
Thermal Resistance, Junction to Ambient
357
Note:
3. Device mounted on FR-4 PCB 1.6 inch X 1.6 inch X 0.06 inch.
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Max.
Unit
Collector-Emitter Breakdown
Voltage
(4)
V
(BR)CEO
I
C
= -1.0 mA, I
B
= 0
-60
V
V
(BR)CBO
Collector-Base Breakdown Voltage
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
C
= -100
μ
A, I
E
= 0
-60
V
V
I
E
= -100
μ
A, I
C
= 0
-4.0
I
CEO
I
CBO
Collector Cut-Off Current
Collector Cut-Off Current
V
CE
= -60 V, I
B
= 0
-0.1
-0.1
μ
A
μ
A
V
CB
= -60 V, I
E
= 0
I
C
= -10 mA, V
CE
= -1.0 V
I
C
= -100 mA, V
CE
= -1.0 V
100
100
h
FE
DC Current Gain
Collector-Emitter Saturation
Voltage
V
CE
(sat)
V
BE
(on)
f
T
I
C
= -100 mA, I
B
= -10 mA
I
C
= -100 mA, V
CE
= -1.0 V
-0.25
-1.2
V
V
Base-Emitter On Voltage
I
C
= -100 mA, V
CE
= -1.0
V
,
f = 100 MHz
Current Gain – Bandwidth Product
50
MHz
Note:
4. Pulse test: pulse width
≤
300
μ
s, duty cycle
≤
2.0%.
©1997 Fairchild Semiconductor Corporation
MMBTA55 Rev. 1.1.0
2
Physical Dimensions
SOT-23
0.95
2.92 0.20
3
1.40
+0.20
-0.15
1.30
2.20
1.00
1
2
0.60
0.37
(0.29)
0.95
1.90
0.20
A B
1.90
LAND PATTERN
RECOMMENDATION
SEE DETAIL A
1.20 MAX
(0.93)
0.10
0.00
0.10
C
C
2.40 0.30
NOTES: UNLESS OTHERWISE SPECIFIED
GAGE PLANE
A) REFERENCE
JEDEC REGISTRATION
TO-236, VARIATION AB, ISSUE H.
B) ALL
DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS
ARE INCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR EXTRUSIONS.
D) DIMENSIONING
AND TOLERANCING PER
ASME Y14.5M – 1994.
0.23
0.08
0.25
0.20 MIN
E) DRAWING
FILE NAME: MA03DREV10
SEATING
PLANE
(0.55)
SCALE: 2X
Figure1. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE (ACTIVE)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
©1997 Fairchild Semiconductor Corporation
MMBTA55 Rev. 1.1.0
3
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intended to be an exhaustive list of all such trademarks.
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE
SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN,
WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life
support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain
life, and (c) whose failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the user.
2. A
critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its
safety or effectiveness.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Preliminary
No Identification Needed
Obsolete
First Production
Full Production
Not In Production
Rev. I68
© Fairchild Semiconductor Corporation
