onsemi-MMBTA56LT1
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” or its affiliates and/or
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assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
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onsemi
. “
T
ypical” parameters which may be provided in
onsemi
data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts.
onsemi
does not convey any license under any of its intellectual property rights nor the rights of others.
onsemi
products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use
onsemi
products for any such unintended or unauthorized application, Buyer shall indemnify and hol
d
onsemi
and its officers, employees,
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associated with such unintended or unauthorized use, even if such claim alleges that
onsemi
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onsemi
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Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
MMBTA55LꢀSeries,
MMBTA56LꢀSeries,
SMMBTA56LꢀSeries
Driver
T
r
ansistors
PNP Silicon
Features
•
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
SOT−23
CASE 318
STYLE 6
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
1
Collecto
r
−
E
mitter Voltage
MMBTA55
MMBTA56, SMMBTA56
V
CEO
V
CBO
V
EBO
Vdc
BASE
−60
−80
2
Collecto
r
−
B
ase Voltage
MMBTA55
MMBTA56, SMMBTA56
Vdc
EMITTER
−60
−80
MARKING DIAGRAM
Emitte
r
−
B
ase Voltage
−4.0
Vdc
Collector Current − Continuous
I
C
−500
mAdc
2xx M
G
THERMAL CHARACTERISTICS
Characteristic
G
Symbol
Max
Unit
1
T
o
tal Device Dissipation FR
−
5
B
oard
P
D
225
1.8
mW
mW/
°
C
A
2xx =
Device Code
Derate above 25
°
C
x = H for MMBTA55LT1G
xx = GM for MMBTA56LT1G,
SMMBTA56LT1G
= Date Code*
= Pb−Free Package
Thermal Resistance, Junction−to−Ambient
R
556
°
C/W
q
JA
T
o
tal Device Dissipation Alumina
P
D
M
G
300
2.4
mW
mW/
°
C
A
(Note: Microdot may be in either location)
Thermal Resistance, Junction−to−Ambient
Junction and Storage
T
e
mperature
R
417
°
C/W
°
C
q
JA
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
T , T
J
−55 to +150
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR
−
5
=
1
.0
ꢀ
0.75
ꢀ
0.062 in.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
2. Alumina
= 0.4
ꢀ
0.3
ꢀ
0.024 in. 99.5% alumina.
©
Semiconductor Components Industries, LLC, 1994
1
Publication Order Number:
April, 2018 − Rev. 9
MMBTA55LT1/D
MMBTA55L Series, MMBTA56L Series, SMMBTA56L Series
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
V
Vdc
(BR)CEO
(I =
−1.0 mAdc, I
= 0)
MMBTA55
MMBTA56, SMMBTA56
C
B
−60
−80
−
−
Emitte
r
−
B
ase Breakdown Voltage
V
Vdc
m
Adc
m
Adc
(BR)EBO
(I =
−100
m
Adc, I
= 0)
−4.0
−
−
E
C
Collector Cutoff Current
(V =
−60 Vdc, I
= 0)
I
CES
−0.1
CE
B
Collector Cutoff Current
I
CBO
(V =
−60 Vdc, I
= 0)
MMBTA55
CB
E
−
−
−0.1
−0.1
(V =
−80 Vdc, I
= 0)
CB
E
MMBTA56, SMMBTA56
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I =
−10 mAdc, V
= −1.0 Vdc)
100
100
−
−
C
CE
(I =
−100 mAdc, V
= −1.0 Vdc)
C
CE
Collecto
r
−
E
mitter Saturation Voltage
(I =
−100 mAdc, I
= −10 mAdc)
V
Vdc
Vdc
CE(sat)
−
−
−0.25
−1.2
C
B
Bas
e
−
E
mitter On Voltage
(I =
−100 mAdc, V
= −1.0 Vdc)
V
BE(on)
C
CE
SMALL
−
S
IGNAL CHARACTERISTICS
f
T
MHz
(I =
−100 mAdc, V
= −1.0 Vdc, f = 100 MHz)
50
−
C
CE
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse
T
e
st: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
4. f is
defined as the frequency at which |h
| extrapolates to unity.
T
fe
TURN-ON TIME
TURN-OFF TIME
V
CC
V
CC
+V
-1.0 V
BB
+40 V
+40 V
5.0
m
s
100
R
100
R
L
L
OUTPUT
OUTPUT
+10 V
0
V
in
R
V
in
R
B
B
t =
3.0 ns
r
* C
t
6.0 pF
* C
t
6.0 pF
S
S
5.0
m
F
5.0
m
F
100
100
5.0
m
s
t =
3.0 ns
r
*
T
o
tal Shunt Capacitance of
T
e
st Jig and Connectors For PNP
T
e
st Circuits, Reverse All Voltage Polarities
Figure 1. Switching Time Test Circuits
2
MMBTA55L Series, MMBTA56L Series, SMMBTA56L Series
200
100
70
T =
25
°
C
J
V
= -2.0 V
CE
T =
25
°
C
J
50
C
ibo
100
70
30
20
50
C
10
obo
30
20
7.0
5.0
-0.1 -0.2
-2.0 -3.0
-5.0 -7.0 -10
-20 -30
-50 -70 -100
-200
-0.5 -1.0 -2.0
-5.0 -10
-20
-50 -100
I ,
COLLECTOR CURRENT (mA)
C
V ,
REVERSE VOLTAGE (VOLTS)
R
Figure 2. Current−Gain — Bandwidth Product
Figure 3. Capacitance
1.0 k
700
500
400
200
T =
125
°
C
J
V
CE
= -1.0 V
t
s
300
200
25
°
C
100
70
-55
°
C
t
100
80
f
50
V
CC
I /I
= 10
= -40 V
30
20
C B
60
I =
I
B1 B2
t
r
t @
V
d
= -0.5 V
BE(off)
T =
25
°
C
J
10
40
-5.0 -7.0 -10
-20 -30
-50 -70 -100
-200 -300
-500
-0.5 -1.0 -2.0
-5.0 -10
-20
-50 -100
-200
-500
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 4. Switching Time
Figure 5. DC Current Gain
1
1.1
I /I
= 10
I /I
= 10
C
B
C
B
1.0
0.9
0.8
0.7
0.6
0.5
0.4
150
°
C
−55
°
C
−55
°
C
25
°
C
25
°
C
0.1
150
°
C
0.3
0.2
0.01
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 6. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 7. Base Emitter Saturation Voltage vs.
Collector Current
3
MMBTA55L Series, MMBTA56L Series, SMMBTA56L Series
-1.0
-0.8
1.2
1.1
1.0
T =
25
°
C
J
V
CE
= 1 V
I
=
-250 mA
I
=
-100 mA
I
=
-50 mA
I
=
-500 mA
C
C
C
C
0.9
0.8
0.7
0.6
0.5
0.4
−55
°
C
25
°
C
-0.6
-0.4
-0.2
0
I
C
=
-10 mA
150
°
C
0.3
0.2
0.0001
0.001
0.01
0.1
1
-0.05 -0.1
-0.2
-0.5 -1.0 -2.0
-5.0 -10
-20
-50
I ,
COLLECTOR CURRENT (A)
C
I ,
BASE CURRENT (mA)
B
Figure 8. Base Emitter Voltage vs. Collector
Current
Figure 9. Collector Saturation Region
-0.8
-1.2
-1.6
-2.0
1
1 mS
1 S
100 mS
10 mS
0.1
Thermal Limit
R
for V
BE
q
VB
0.01
-2.4
-2.8
0.001
0.1
1
10
100
-0.5 -1.0 -2.0
-5.0 -10
-20
-50 -100
-200 -500
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
I ,
COLLECTOR CURRENT (mA)
C
Figure 10. Base−Emitter Temperature
Coefficient
Figure 11. Safe Operating Area
ORDERING INFORMATION
†
Device Order Number
MMBTA55LT1G
Package Type
Shipping
SOT−23
(Pb−Free)
3,000 /
T
a
pe & Reel
10,000 /
T
a
pe & Reel
3,000 /
T
a
pe & Reel
3,000 /
T
a
pe & Reel
10,000 /
T
a
pe & Reel
10,000 /
T
a
pe & Reel
MMBTA55LT3G
MMBTA56LT1G
SMMBTA56LT1G
MMBTA56LT3G
SMMBTA56LT3G
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT
−
23 (TO
−
236)
CASE 318
−
08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
NOTES:
D
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
0.25
3
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
T
H
E
E
1
2
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
°
NOM
1.00
0.06
0.44
0.14
2.90
1.30
1.90
0.43
0.54
2.40
−−−
MAX
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
°
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
°
L
1.11
0.10
0.50
0.20
3.04
1.40
2.04
0.55
0.69
2.64
10
°
3X
b
L1
VIEW C
e
TOP VIEW
L1
A
H
E
T
c
A1
SEE VIEW C
SIDE VIEW
GENERIC
MARKING DIAGRAM*
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT
XXXM
G
G
1
3X
0.90
XXX = Specific Device Code
2.90
M
= Date Code
G
= Pb
−
Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present.
3X
0.95
0.80
PITCH
DIMENSIONS: MILLIMETERS
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
STYLE 7:
PIN 1.
EMITTER
2. BASE
STYLE 8:
PIN 1.
BASE
2. EMITTER
3. COLLECTOR
PIN 1.
ANODE
2. NO
CONNECTION
3. CATHODE
3. COLLECTOR
STYLE 9:
PIN 1.
ANODE
2. ANODE
STYLE 10:
STYLE 11:
STYLE 12:
STYLE 13:
PIN 1.
SOURCE
2. DRAIN
STYLE 14:
PIN 1.
CATHODE
2. GATE
PIN 1.
DRAIN
2. SOURCE
3. GATE
PIN 1.
ANODE
PIN 1.
CATHODE
2. CATHODE
3. ANODE
2. CATHODE
3. CATHODE
−
ANODE
3. CATHODE
3. GATE
3. ANODE
STYLE 15:
STYLE 16:
STYLE 17:
PIN 1.
NO CONNECTION
2. ANODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1.
GATE
2. CATHODE
3. ANODE
PIN 1.
ANODE
2. CATHODE
3. CATHODE
PIN 1.
NO CONNECTION
PIN 1.
CATHODE
PIN 1.
CATHODE
2. ANODE
3. GATE
2. CATHODE
3. ANODE
2. ANODE
3. CATHODE
−
ANODE
3. CATHODE
STYLE 21:
STYLE 22:
STYLE 23:
PIN 1.
ANODE
2. ANODE
STYLE 24:
STYLE 25:
STYLE 26:
PIN 1.
GATE
2. SOURCE
3. DRAIN
PIN 1.
RETURN
2. OUTPUT
3. INPUT
PIN 1.
GATE
2. DRAIN
PIN 1.
ANODE
2. CATHODE
3. GATE
PIN 1.
CATHODE
2. ANODE
3. SOURCE
3. NO
CONNECTION
3. CATHODE
STYLE 27:
STYLE 28:
PIN 1.
CATHODE
2. CATHODE
3. CATHODE
PIN 1.
ANODE
2. ANODE
3. ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT
−
23 (TO
−
236)
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800
−
282
−
9855
T
o
ll Free USA/Canada
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