onsemi-MMBTA56LT1G
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MMBTA55LꢀSeries,
MMBTA56LꢀSeries,
SMMBTA56LꢀSeries
Driver
T
r
ansistors
PNP Silicon
Features
•
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC
−
Q101 Qualified and
PPAP Capable
SOT
−
23
CASE 318
STYLE 6
•
These Devices are Pb
−
Free, Halogen Free/BFR Free and are RoHS
Compliant
COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
1
Collecto
r
−
Emitter Voltage
MMBTA55
V
CEO
V
CBO
V
EBO
Vdc
BASE
−
60
−
80
MMBTA56, SMMBTA56
2
Collecto
r
−
Base Voltage
MMBTA55
MMBTA56, SMMBTA56
Vdc
EMITTER
−
60
−
80
MARKING DIAGRAM
Emitte
r
−
Base Voltage
−
4.0
Vdc
Collector Current
−
Continuous
I
C
−
500
mAdc
2xx M
G
THERMAL CHARACTERISTICS
Characteristic
G
Symbol
Max
Unit
1
T
o
tal Device Dissipation FR
−
5 Board
P
D
225
1.8
mW
mW/
°
C
A
2xx =
Device Code
Derate above 25
°
C
x = H for MMBTA55LT1G
xx = GM for MMBTA56LT1G,
SMMBTA56LT1G
= Date Code*
= Pb
−
Free Package
Thermal Resistance, Junction
−
to
−
Ambient
R
556
°
C/W
q
JA
T
o
tal Device Dissipation Alumina
P
D
M
G
300
2.4
mW
mW/
°
C
A
(Note: Microdot may be in either location)
Thermal Resistance, Junction
−
to
−
Ambient
Junction and Storage
T
e
mperature
R
417
°
C/W
°
C
q
JA
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
T , T
J
−
55 to +150
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR
−
5 = 1.0
ꢀ
0.75
ꢀ
0.062 in.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
2. Alumina
= 0.4
ꢀ
0.3
ꢀ
0.024 in. 99.5% alumina.
©
Semiconductor Components Industries, LLC, 1994
1
Publication Order Number:
October, 2016
−
Rev. 8
MMBTA55LT1/D
MMBTA55L Series, MMBTA56L Series, SMMBTA56L Series
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
V
Vdc
(BR)CEO
(I =
−
1.0 mAdc, I
= 0)
C
B
MMBTA55
−
60
−
80
−
−
MMBTA56, SMMBTA56
Emitte
r
−
Base Breakdown Voltage
V
Vdc
m
Adc
m
Adc
(BR)EBO
(I =
−
100
m
Adc, I
= 0)
−
4.0
−
E
C
Collector Cutoff Current
(V =
−
60 Vdc, I
= 0)
I
CES
−
−
0.1
CE
B
Collector Cutoff Current
I
CBO
(V =
−
60 Vdc, I
= 0)
CB
E
MMBTA55
−
−
−
0.1
−
0.1
(V =
−
80 Vdc, I
= 0)
CB
E
MMBTA56, SMMBTA56
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I =
−
10 mAdc, V
=
−
1.0 Vdc)
100
100
−
−
C
CE
(I =
−
100 mAdc, V
=
−
1.0 Vdc)
C
CE
Collecto
r
−
Emitter Saturation Voltage
(I =
−
100 mAdc, I
=
−
10 mAdc)
V
Vdc
Vdc
CE(sat)
−
−
−
0.25
−
1.2
C
B
Bas
e
−
Emitter On Voltage
(I =
−
100 mAdc, V
=
−
1.0 Vdc)
V
BE(on)
C
CE
SMALL
−
SIGNAL CHARACTERISTICS
f
T
MHz
(I =
−
100 mAdc, V
=
−
1.0 Vdc, f = 100 MHz)
50
−
C
CE
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse
T
e
st: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
4. f is
defined as the frequency at which |h
| extrapolates to unity.
T
fe
TURN-ON TIME
TURN-OFF TIME
V
CC
V
CC
+V
-1.0 V
BB
+40 V
+40 V
5.0
m
s
100
R
100
R
L
L
OUTPUT
OUTPUT
+10 V
0
V
in
R
V
in
R
B
B
t =
3.0 ns
r
* C
t
6.0 pF
* C
t
6.0 pF
S
S
5.0
m
F
5.0
m
F
100
100
5.0
m
s
t =
3.0 ns
r
*
T
o
tal Shunt Capacitance of
T
e
st Jig and Connectors For PNP
T
e
st Circuits, Reverse All Voltage Polarities
Figure 1. Switching Time Test Circuits
2
MMBTA55L Series, MMBTA56L Series, SMMBTA56L Series
200
100
70
T =
25
°
C
J
V
= -2.0 V
CE
T =
25
°
C
J
50
C
ibo
100
70
30
20
50
C
10
obo
30
20
7.0
5.0
-0.1 -0.2
-2.0 -3.0
-5.0 -7.0 -10
-20 -30
-50 -70 -100
-200
-0.5 -1.0 -2.0
-5.0 -10
-20
-50 -100
I ,
COLLECTOR CURRENT (mA)
C
V ,
REVERSE VOLTAGE (VOLTS)
R
Figure 2. Current
−
Gain — Bandwidth Product
Figure 3. Capacitance
1.0 k
700
500
400
200
T =
125
°
C
J
V
CE
= -1.0 V
t
s
300
200
25
°
C
100
70
-55
°
C
t
100
80
f
50
V
CC
I /I
= 10
= -40 V
30
20
C B
60
I =
I
B1 B2
t
r
t @
V
d
= -0.5 V
BE(off)
T =
25
°
C
J
10
40
-5.0 -7.0 -10
-20 -30
-50 -70 -100
-200 -300
-500
-0.5 -1.0 -2.0
-5.0 -10
-20
-50 -100
-200
-500
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 4. Switching Time
Figure 5. DC Current Gain
1
1.1
I /I
= 10
I /I
= 10
C
B
C
B
1.0
0.9
0.8
0.7
0.6
0.5
0.4
150
°
C
−
55
°
C
−
55
°
C
25
°
C
25
°
C
0.1
150
°
C
0.3
0.2
0.01
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 6. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 7. Base Emitter Saturation Voltage vs.
Collector Current
3
MMBTA55L Series, MMBTA56L Series, SMMBTA56L Series
-1.0
-0.8
1.2
1.1
1.0
T =
25
°
C
J
V
= 1 V
CE
I =
C
-250 mA
I =
C
-100 mA
I =
C
-50 mA
I =
C
-500 mA
0.9
0.8
0.7
0.6
0.5
0.4
−
55
°
C
25
°
C
-0.6
-0.4
-0.2
0
I =
C
-10 mA
150
°
C
0.3
0.2
0.0001
0.001
0.01
0.1
1
-0.05 -0.1
-0.2
-0.5 -1.0 -2.0
-5.0 -10
-20
-50
I ,
COLLECTOR CURRENT (A)
C
I ,
BASE CURRENT (mA)
B
Figure 8. Base Emitter Voltage vs. Collector
Current
Figure 9. Collector Saturation Region
-0.8
-1.2
-1.6
-2.0
1
1 mS
1 S
100 mS
10 mS
0.1
Thermal Limit
R
for V
BE
q
VB
0.01
-2.4
-2.8
0.001
0.1
1
10
100
-0.5 -1.0 -2.0
-5.0 -10
-20
-50 -100
-200 -500
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
I ,
COLLECTOR CURRENT (mA)
C
Figure 10. Base
−
Emitter Temperature
Figure 11. Safe Operating Area
Coefficient
ORDERING INFORMATION
†
Device Order Number
MMBTA55LT1G
Package Type
Shipping
SOT
−
23
(Pb
−
Free)
3,000 /
T
a
pe & Reel
10,000 /
T
a
pe & Reel
3,000 /
T
a
pe & Reel
3,000 /
T
a
pe & Reel
10,000 /
T
a
pe & Reel
10,000 /
T
a
pe & Reel
MMBTA55LT3G
MMBTA56LT1G
SMMBTA56LT1G
MMBTA56LT3G
SMMBTA56LT3G
SOT
−
23
(Pb
−
Free)
SOT
−
23
(Pb
−
Free)
SOT
−
23
(Pb
−
Free)
SOT
−
23
(Pb
−
Free)
SOT
−
23
(Pb
−
Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
4
MMBTA55L Series, MMBTA56L Series, SMMBTA56L Series
PACKAGE DIMENSIONS
SOT
−
23 (TO
−
236)
CASE 318
−
08
ISSUE AR
NOTES:
D
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
0.25
3
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
T
H
E
E
1
2
MILLIMETERS
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
DIM
A
A1
b
c
D
E
e
L
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
_
NOM
1.00
0.06
0.44
0.14
2.90
1.30
1.90
0.43
0.54
2.40
−−−
MAX
MIN
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
_
L
1.11
0.10
0.50
0.20
3.04
1.40
2.04
0.55
0.69
2.64
10
_
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
_
3X
b
L1
VIEW C
e
TOP VIEW
L1
A
H
E
T
c
A1
SEE VIEW C
STYLE 6:
PIN 1.
BASE
SIDE VIEW
END VIEW
2. EMITTER
3. COLLECTOR
RECOMMENDED
SOLDERING FOOTPRINT*
3X
0.90
2.90
3X
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
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PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
N. American Technical Support
: 800
−
282
−
9855
T
o
ll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
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Phone: 81
−
3
−
5817
−
1050
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Phone
: 303
−
675
−
2175 or 800
−
344
−
3860
T
o
ll Free USA/Canada
Fax
: 303
−
675
−
2176 or 800
−
344
−
3867
T
o
ll Free USA/Canada
Email
: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
◊
MMBTA55LT1/D
