onsemi-MMBTA56LT1G

Part #onsemi-MMBTA56LT1G
Download 
onsemi-MMBTA56LT1G
MMBTA55LꢀSeries,  
MMBTA56LꢀSeries,  
SMMBTA56LꢀSeries  
Driver
T
r
ansistors  
PNP Silicon  
Features  
•
S Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements; AEC
−
Q101 Qualified and  
PPAP Capable  
SOT
−
23  
CASE 318  
STYLE 6  
•
These Devices are Pb
−
Free, Halogen Free/BFR Free and are RoHS  
Compliant  
COLLECTOR  
3
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
1
Collecto
r
−
Emitter Voltage  
MMBTA55  
V
CEO  
V
CBO  
V
EBO  
Vdc  
BASE  
−
60  
−
80  
MMBTA56, SMMBTA56  
2
Collecto
r
−
Base Voltage  
MMBTA55  
MMBTA56, SMMBTA56  
Vdc  
EMITTER  
−
60  
−
80  
MARKING DIAGRAM  
Emitte
r
−
Base Voltage  
−
4.0  
Vdc  
Collector Current
−
Continuous  
I
C
−
500  
mAdc  
2xx M
G  
THERMAL CHARACTERISTICS  
Characteristic  
G
Symbol  
Max  
Unit  
1
T
o
tal Device Dissipation FR
−
5 Board  
P
D

(Note 1) T

= 25
°
C  
225  
1.8  
mW  
mW/
°
C  
A
2xx =
 
Device Code  
Derate above 25
°
C  
x = H for MMBTA55LT1G  
xx = GM for MMBTA56LT1G,  
SMMBTA56LT1G  
= Date Code*  
= Pb
−
Free Package  
Thermal Resistance, Junction
−
to
−
Ambient  
R
556  
°
C/W  
q
JA  
T
o
tal Device Dissipation Alumina  
P
D
M
G
300  
2.4  
mW  
mW/
°
C  
A
Derate above 25

C  
(Note: Microdot may be in either location)  
Thermal Resistance, Junction
−
to
−
Ambient  
Junction and Storage
T
e
mperature  
R
417  
°
C/W  
°
C  
q
JA  
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
T , T  
J
−
55 to +150  
stg  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. FR
−
5 = 1.0
ꢀ
0.75
ꢀ
0.062 in.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on

2. Alumina
 
= 0.4
ꢀ
0.3
ꢀ
0.024 in. 99.5% alumina.  
©
Semiconductor Components Industries, LLC, 1994  
1
Publication Order Number:  
October, 2016
−
Rev. 8  
MMBTA55LT1/D  
 

MMBTA55L Series, MMBTA56L Series, SMMBTA56L Series  
ELECTRICAL CHARACTERISTICS
(T =
 
25
°
C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
Collecto
r
−
Emitter Breakdown V

V
Vdc  
(BR)CEO  
(I =
 
−
1.0 mAdc, I
 
= 0)  
C
B
MMBTA55  
−
60  
−
80  
−
−
MMBTA56, SMMBTA56  
Emitte
r
−
Base Breakdown Voltage  
V
Vdc  
m
Adc  
m
Adc  
(BR)EBO  
(I =
 
−
100
m
Adc, I
 
= 0)  
−
4.0  
−
E
C
Collector Cutoff Current  
(V =
 
−
60 Vdc, I
 
= 0)  
I
CES  
−
−
0.1  
CE  
B
Collector Cutoff Current  
I
CBO  
(V =
 
−
60 Vdc, I
 
= 0)  
CB  
E
MMBTA55  
−
−
−
0.1  
−
0.1  
(V =
 
−
80 Vdc, I
 
= 0)  
CB  
E
MMBTA56, SMMBTA56  
ON CHARACTERISTICS  
DC Current Gain  
h
FE  
−
(I =
 
−
10 mAdc, V
 
=
−
1.0 Vdc)  
100  
100  
−
−
C
CE  
(I =
 
−
100 mAdc, V
 
=
−
1.0 Vdc)  
C
CE  
Collecto
r
−
Emitter Saturation Voltage  
(I =
 
−
100 mAdc, I
 
=
−
10 mAdc)  
V
Vdc  
Vdc  
CE(sat)  
−
−
−
0.25  
−
1.2  
C
B
Bas
e
−
Emitter On Voltage  
(I =
 
−
100 mAdc, V
 
=
−
1.0 Vdc)  
V
BE(on)  
C
CE  
SMALL
−
SIGNAL CHARACTERISTICS  
f
T
MHz  
(I =
 
−
100 mAdc, V
 
=
−
1.0 Vdc, f = 100 MHz)  
50  
−
C
CE  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
3. Pulse
 
T
e
st: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.  
4. f is
 
defined as the frequency at which |h
 
| extrapolates to unity.  
T
fe  
TURN-ON TIME  
TURN-OFF TIME  
V
CC  
V
CC  
+V  
-1.0 V  
BB  
+40 V  
+40 V  
5.0
m
s  
100  
R
100  
R
L
L
OUTPUT  
OUTPUT  
+10 V  
0
V
in  
R
V
in  
R
B
B
t =
 
3.0 ns  
r
* C
 
t
6.0 pF  
* C
 
t
6.0 pF  
S
S
5.0
m
F  
5.0
m
F  
100  
100  
5.0
m
s  
t =
 
3.0 ns  
r
*
T
o
tal Shunt Capacitance of
T
e
st Jig and Connectors For PNP
T
e
st Circuits, Reverse All Voltage Polarities  
Figure 1. Switching Time Test Circuits  
2
 

MMBTA55L Series, MMBTA56L Series, SMMBTA56L Series  
200  
100  
70  
T =
 
25
°
C  
J
V
= -2.0 V  
CE  
T =
 
25
°
C  
J
50  
C
ibo  
100  
70  
30  
20  
50  
C
10  
obo  
30  
20  
7.0  
5.0  
-0.1 -0.2  
-2.0 -3.0
 
-5.0 -7.0 -10  
-20 -30
 
-50 -70 -100  
-200  
-0.5 -1.0 -2.0  
-5.0 -10
 
-20  
-50 -100  
I ,
 
COLLECTOR CURRENT (mA)  
C
V ,
 
REVERSE VOLTAGE (VOLTS)  
R
Figure 2. Current
−
Gain — Bandwidth Product  
Figure 3. Capacitance  
1.0 k  
700  
500  
400  
200  
T =
 
125
°
C  
J
V
CE  
= -1.0 V  
t
s
300  
200  
25
°
C  
100  
70  
-55
°
C  
t
100  
80  
f
50  
V
CC  
I /I
 
= 10  
= -40 V  
30  
20  
C B  
60  
I =
 
I  
B1 B2  
t
r
t @
 
V  
d
= -0.5 V  
BE(off)  
T =
 
25
°
C  
J
10  
40  
-5.0 -7.0 -10  
-20 -30  
-50 -70 -100  
-200 -300
 
-500  
-0.5 -1.0 -2.0  
-5.0 -10
 
-20  
-50 -100
 
-200  
-500  
I ,
 
COLLECTOR CURRENT (mA)  
C
I ,
 
COLLECTOR CURRENT (mA)  
C
Figure 4. Switching Time  
Figure 5. DC Current Gain  
1
1.1  
I /I
 
= 10  
I /I
 
= 10  
C
B
C
B
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
150
°
C  
−
55
°
C  
−
55
°
C  
25
°
C  
25
°
C  
0.1  
150
°
C  
0.3  
0.2  
0.01  
0.001  
0.01  
0.1  
1
0.0001  
0.001  
0.01  
0.1  
1
I ,
 
COLLECTOR CURRENT (A)  
C
I ,
 
COLLECTOR CURRENT (A)  
C
Figure 6. Collector Emitter Saturation Voltage  
vs. Collector Current  
Figure 7. Base Emitter Saturation Voltage vs.  
Collector Current  
3

MMBTA55L Series, MMBTA56L Series, SMMBTA56L Series  
-1.0  
-0.8  
1.2  
1.1  
1.0  
T =
 
25
°
C  
J
V
= 1 V  
CE  
I =  
C
-250 mA  
I =  
C
-100 mA  
I =  
C
-50 mA  
I =  
C
-500 mA  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
−
55
°
C  
25
°
C  
-0.6  
-0.4  
-0.2  
0
I =  
C
-10 mA  
150
°
C  
0.3  
0.2  
0.0001  
0.001  
0.01  
0.1  
1
-0.05 -0.1
 
-0.2  
-0.5 -1.0 -2.0
 
-5.0 -10
 
-20  
-50  
I ,
 
COLLECTOR CURRENT (A)  
C
I ,
 
BASE CURRENT (mA)  
B
Figure 8. Base Emitter Voltage vs. Collector  
Current  
Figure 9. Collector Saturation Region  
-0.8  
-1.2  
-1.6  
-2.0  
1
1 mS  
1 S  
100 mS  
10 mS  
0.1  
Thermal Limit  
R
for V  
BE  
q
VB  
0.01  
-2.4  
-2.8  
0.001  
0.1  
1
10  
100  
-0.5 -1.0 -2.0  
-5.0 -10
 
-20  
-50 -100
 
-200 -500  
V
CE  
, COLLECTOR EMITTER VOLTAGE (V)  
I ,
 
COLLECTOR CURRENT (mA)  
C
Figure 10. Base
−
Emitter Temperature  
Figure 11. Safe Operating Area  
Coefficient  
ORDERING INFORMATION  
†
Device Order Number  
MMBTA55LT1G  
Package Type  
Shipping  
SOT
−
23  
(Pb
−
Free)  
3,000 /
T
a
pe & Reel  
10,000 /
T
a
pe & Reel  
3,000 /
T
a
pe & Reel  
3,000 /
T
a
pe & Reel  
10,000 /
T
a
pe & Reel  
10,000 /
T
a
pe & Reel  
MMBTA55LT3G  
MMBTA56LT1G  
SMMBTA56LT1G  
MMBTA56LT3G  
SMMBTA56LT3G  
SOT
−
23  
(Pb
−
Free)  
SOT
−
23  
(Pb
−
Free)  
SOT
−
23  
(Pb
−
Free)  
SOT
−
23  
(Pb
−
Free)  
SOT
−
23  
(Pb
−
Free)  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging  
Specifications Brochure, BRD8011/D.  
4

MMBTA55L Series, MMBTA56L Series, SMMBTA56L Series  
PACKAGE DIMENSIONS  
SOT
−
23 (TO
−
236)  
CASE 318
−
08  
ISSUE AR  
NOTES:  
D
1. DIMENSIONING
 
AND TOLERANCING PER ASME Y14.5M, 1994.  
2. CONTROLLING
 
DIMENSION: MILLIMETERS.  
3. MAXIMUM
 
LEAD THICKNESS INCLUDES LEAD FINISH.  
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF  
THE BASE MATERIAL.  
0.25  
3
4. DIMENSIONS
 
D AND E DO NOT INCLUDE MOLD FLASH,  
PROTRUSIONS, OR GATE BURRS.  
T
H
E
E
1
2
MILLIMETERS  
INCHES  
NOM  
0.039  
0.002  
0.017  
0.006  
0.114  
0.051  
0.075  
0.017  
0.021  
0.094  
−−−  
DIM  
A
A1  
b
c
D
E
e
L
MIN  
0.89  
0.01  
0.37  
0.08  
2.80  
1.20  
1.78  
0.30  
0.35  
2.10  
0
_
 
NOM  
1.00  
0.06  
0.44  
0.14  
2.90  
1.30  
1.90  
0.43  
0.54  
2.40  
−−−  
MAX  
MIN  
MAX  
0.044  
0.004  
0.020  
0.008  
0.120  
0.055  
0.080  
0.022  
0.027  
0.104  
10
_  
L
1.11  
0.10  
0.50  
0.20  
3.04  
1.40  
2.04  
0.55  
0.69  
2.64  
10
_  
0.035  
0.000  
0.015  
0.003  
0.110  
0.047  
0.070  
0.012  
0.014  
0.083  
0
_  
3X  
b
L1  
VIEW C  
e
TOP VIEW  
L1  
A
H
E
T
c
A1  
SEE VIEW C  
STYLE 6:  
PIN 1.
 
BASE  
SIDE VIEW  
END VIEW  
2. EMITTER  
3. COLLECTOR  
RECOMMENDED  
SOLDERING FOOTPRINT*  
3X  
0.90  
2.90  
3X  
0.95  
PITCH  
0.80  
DIMENSIONS: MILLIMETERS  
*For additional information on our Pb
−
Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
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T
:  
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−
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o
ll Free  
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◊
MMBTA55LT1/D