onsemi-MMBTA63LT1G
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MMBTA63LT1G,
MMBTA64LT1G,
SMMBTA64LT1G
Darlington
T
r
ansistors
PNP Silicon
Features
•
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
SOT−23 (TO−236)
CASE 318
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
STYLE 6
MAXIMUM RATINGS
COLLECTOR 3
Rating
Symbol
Value
Unit
BASE
1
Collecto
r
−
E
mitter Voltage
V
CES
−30
Vdc
Collecto
r
−
B
ase Voltage
Emitte
r
−
B
ase Voltage
V
V
−30
−10
Vdc
Vdc
CBO
EMITTER 2
EBO
MARKING DIAGRAM
Collector Current − Continuous
I
C
−500
mAdc
THERMAL CHARACTERISTICS
2x M
G
Characteristic
Symbol
Max
Unit
G
T
o
tal Device Dissipation FR−5 Board,
P
D
1
225
1.8
mW
mW/
°
C
A
Derate above 25
°
C
2x =
Device Code
Thermal Resistance, Junction−to−Ambient
R
556
°
C/W
q
JA
x = U for MMBTA63LT1G
x = V for MMBTA64LT1G
SMMBTA64LT1G
T
o
tal Device Dissipation
P
D
M
G
= Date Code*
= Pb−Free Package
T =
25
°
C
300
2.4
mW
mW/
°
C
A
Derate above 25
°
C
(Note: Microdot may be in either location)
Thermal Resistance, Junction−to−Ambient
Junction and Storage
T
e
mperature
R
417
°
C/W
°
C
q
JA
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
T , T
J
−55 to +150
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5
= 1.0 x 0.75 x 0.062 in.
ORDERING INFORMATION
†
Device
Package
Shipping
2. Alumina
= 0.4 x 0.3 x 0.024 in. 99.5% alumina.
MMBTA63LT1G
SOT−23 3,000
/
T
a
pe & Reel
(Pb−Free)
MMBTA64LT1G
SOT−23 3,000
/
T
a
pe & Reel
(Pb−Free)
SMMBTA64LT1G SOT−23 3,000
/
T
a
pe & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 1994
1
Publication Order Number:
October, 2016 − Rev. 6
MMBTA63LT1/D
MMBTA63LT1G, MMBTA64LT1G, SMMBTA64LT1G
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collecto
r
−
E
mitter Breakdown Voltage
V
Vdc
nAdc
nAdc
(BR)CEO
(I =
−100
m
Adc)
C
−30
−
−
Collector Cutoff Current
(V =
−30 Vdc)
CB
I
CBO
−100
−100
Emitter Cutoff Current
(V =
−10 Vdc)
EB
I
EBO
−
ON CHARACTERISTICS
h
FE
−
(I =
−10 mAdc, V
= −5.0 Vdc)
C
CE
MMBTA63
(I =
−10 mAdc, V
= −5.0 Vdc)
5,000
10,000
10,000
20,000
−
−
−
−
C
CE
MMBTA64, SMMBTA64
(I =
−100 mAdc, V
= −5.0 Vdc)
C
CE
MMBTA63
(I =
−100 mAdc, V
= −5.0 Vdc)
C
CE
MMBTA64, SMMBTA64
Collecto
r
−
E
mitter Saturation Voltage
V
Vdc
Vdc
CE(sat)
(I =
−100 mAdc, I
= −0.1 mAdc)
−
−
−1.5
−2.0
C
B
Base − Emitter On Voltage
(I =
−100 mAdc, V
= −5.0 Vdc)
V
BE(on)
C
CE
SMALL
−
S
IGNAL CHARACTERISTICS
Curren
t
−
G
ain − Bandwidth Product
f
T
MHz
(I =
−10 mAdc, V
= −5.0 Vdc, f = 100 MHz)
125
−
C
CE
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse
T
e
st: Pulse Width
≤
300
m
s, Duty Cycle
≤
2.0%.
2
MMBTA63LT1G, MMBTA64LT1G, SMMBTA64LT1G
200
100
T =
125
°
C
A
70
50
-10 V
30
20
25
°
C
V
CE
= -2.0 V
-5.0 V
10
7.0
5.0
-55
°
C
3.0
2.0
-0.3
-0.5 -0.7
-1.0
-2.0
-3.0
-5.0 -7.0 -10
-20
-30
-50 -70 -100
-200
-300
I ,
COLLECTOR CURRENT (mA)
C
Figure 1. DC Current Gain
-2.0
-1.6
-1.2
-0.8
-0.4
0
-2.0
-1.8
T =
25
°
C
A
T =
25
°
C
A
V
@ I
/I =
100
C B
BE(sat)
-1.6
-1.4
-1.2
-1.0
I
C
=
-10 mA
-50 mA
-100 mA
-175 mA
-300 mA
V
@ V
= -5.0 V
CE
BE(on)
V
@ I
/I =
1000
C B
CE(sat)
I /I
= 100
C
B
-0.8
-0.6
-0.3 -0.5
-1.0 -2
-3 -5
-10 -20
-30 -50
-100 -200
-300
-0.
1
–
0.2 -0.5 -1
-2 -5
-10 -20
-50 -100-20
0
–
500 -1K-2K
-5K-10K
I ,
COLLECTOR CURRENT (mA)
C
I ,
BASE CURRENT (
m
A)
B
Figure 3. “On” Voltage
Figure 2. Collector Saturation Region
10
1
1 ms
V
CE
= -5.0 V
f = 100 MHz
T =
25
°
C
A
4.0
3.0
10 ms
0.1
2.0
100 ms
1 s
1.0
ꢀ0.01
Thermal Limit
0.4
0.2
0.1
Single Pulse
T
e
st
@ T
= 25
°
C
A
0.001
0.01
-1.0 -2.0
-5.0 -10
-20
-50 -100
-200
-500 -1K
0.1
1.0
10
100
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
I ,
COLLECTOR CURRENT (mA)
C
Figure 5. Safe Operating Area
Figure 4. High Frequency Current Gain
3
MMBTA63LT1G, MMBTA64LT1G, SMMBTA64LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
NOTES:
D
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
0.25
3
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
T
H
E
E
1
2
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
°
NOM
1.00
0.06
0.44
0.14
2.90
1.30
1.90
0.43
0.54
2.40
−−−
MAX
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
°
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
°
L
1.11
0.10
0.50
0.20
3.04
1.40
2.04
0.55
0.69
2.64
10
°
3X
b
L1
VIEW C
e
TOP VIEW
A
H
E
T
c
A1
STYLE 6:
SEE VIEW C
SIDE VIEW
PIN 1.
BASE
2. EMITTER
3. COLLECTOR
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
3X
2.90
0.90
3X
0.95
0.80
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
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T
:
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o
ll Free
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o
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o
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◊
MMBTA63LT1/D
