onsemi-MMBTH10M3T5G
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MMBTH10M3T5G
NPN VHF/UHF
T
r
ansistor
The MMBTH10M3T5G device is a spin
−
off of our popular
SOT
−
23 three
−
leaded device. It is designed for general purpose
VHF/UHF applications and is housed in the SOT
−
723 surface mount
package. This device is ideal for low
−
power surface mount
applications where board space is at a premium.
Features
•
Reduces Board Space
•
This is a Halide
−
Free Device
•
This is a Pb
−
Free Device
COLLECTOR
3
1
BASE
MAXIMUM RATINGS
Rating
Collecto
r
−
Emitter Voltage
Collecto
r
−
Base Voltage
Emitter
−
Base Voltage
Symbol Value
Unit
Vdc
Vdc
Vdc
V
CEO
V
CBO
25
30
2
EMITTER
V
EBO
3.0
THERMAL CHARACTERISTICS
Characteristic
MARKING
DIAGRAM
Symbol
Max
Unit
3
T
o
tal Device Dissipation
P
D
mW
SOT
−
723
CASE 631AA
STYLE 1
265
2.1
AJ M
mW/
°
C
T =
25
°
C
A
2
Derate above 25
°
C
1
Thermal Resistance,
Junction
−
to
−
Ambient
R
470
°
C/W
q
JA
AJ
M
= Specific Device Code
= Date Code
T
o
tal Device Dissipation
Derate above 25
°
C
P
640
5.1
mW
mW/
°
C
°
C/W
D
A
Thermal Resistance,
Junction
−
to
−
Ambient
R
q
195
JA
ORDERING INFORMATION
†
Device
Package
Shipping
Junction and Storage
T
e
mperature
T , T
−
55 to
°
C
J
stg
+150
MMBTH10M3T5G
SOT
−
723 8000/
T
a
pe
& Reel
(Pb
−
Free)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR
−
5 = 1.0
ꢀ
0.75
ꢀ
0.062 in.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
2. Alumina
= 0.4
ꢀ
0.3
ꢀ
0.024 in. 99.5% alumina.
©
Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
January, 2009
−
Rev. 0
MMBTH10M3/D
MMBTH10M3T5G
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector
−
Emitter Breakdown Voltage
(I =
1.0 mAdc, I
= 0)
V
25
30
3.0
−
−
−
−
−
−
−
−
Vdc
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
C
B
Collector
−
Base Breakdown Voltage
(I =
100
μ
Adc, I
= 0)
V
V
C
E
Emitter
−
Base Breakdown Voltage
(I =
10
μ
Adc, I
= 0)
−
Vdc
E
C
Collector Cutoff Current
(V =
25 Vdc, I
= 0)
I
100
100
nAdc
nAdc
CBO
CB
E
Emitter Cutoff Current
(V =
2.0 Vdc, I
= 0)
I
−
EBO
EB
C
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I =
4.0 mAdc, V
= 10 Vdc)
60
−
−
−
C
CE
Collector
−
Emitter Saturation Voltage
(I =
4.0 mAdc, I
= 0.4 mAdc)
V
−
0.5
Vdc
Vdc
CE(sat)
C
B
Base
−
Emitter On Voltage
(I =
4.0 mAdc, V
= 10 Vdc)
V
BE
−
−
0.95
C
CE
SMALL
−
SIGNAL CHARACTERISTICS
Current
−
Gain
−
Bandwidth Product
f
MHz
pF
T
(I =
4.0 mAdc, V
= 10 Vdc, f = 100 MHz)
650
−
−
−
C
CE
Collector
−
Base Capacitance
(V =
10 Vdc, I
= 0, f = 1.0 MHz)
C
−
0.7
cb
CB
E
Common
−
Base Feedback Capacitance
(V =
10 Vdc, I
= 0, f = 1.0 MHz)
C
−
−
−
−
0.65
9.0
pF
rb
CB
E
Collector Base Time Constant
(I =
4.0 mAdc, V
= 10 Vdc, f = 31.8 MHz)
rb
′
C
ps
c
C
CB
2
MMBTH10M3T5G
TYPICAL CHARACTERISTICS
COMMON
−
BASE y PARAMETERS versus FREQUENCY
(V
CB
= 10 Vdc, I
C
= 4.0 mAdc, T
A
= 25
°
C)
y
ib
, INPUT ADMITTANCE
0
80
70
60
50
40
30
20
10
0
g
ib
-ꢀ10
-ꢀ20
-ꢀb
ib
1000 MHz
-ꢀ30
700
-ꢀ40
400
200
100
-ꢀ50
-ꢀ60
100
200
300
400 500
700
1000
0
10
20
30
40
g (mmhos)
50
60
70
80
f, FREQUENCY (MHz)
ib
Figure 1. Rectangular Form
Figure 2. Polar Form
y
fb
, FORWARD TRANSFER ADMITTANCE
70
60
50
60
400
b
fb
200
50
40
30
600
100
40
30
700
-ꢀg
fb
20
10
1000 MHz
0
-ꢀ10
-ꢀ20
-ꢀ30
20
10
1000
100
200
300
400 500
700
70
60
50
40
30
g
20
10
0
-ꢀ10 -ꢀ20
-ꢀ30
f, FREQUENCY (MHz)
(mmhos)
fb
Figure 3. Rectangular Form
Figure 4. Polar Form
3
MMBTH10M3T5G
TYPICAL CHARACTERISTICS
COMMON
−
BASE y PARAMETERS versus FREQUENCY
(V
CB
= 10 Vdc, I
C
= 4.0 mAdc, T
A
= 25
°
C)
y
rb
, REVERSE TRANSFER ADMITTANCE
0
5.0
4.0
100
200
-ꢀ1.0
MPS H11
400
700
3.0
2.0
1.0
-ꢀ2.0
-b
rb
-b
rb
-ꢀ3.0
MPS H10
-g
-ꢀ4.0
-ꢀ5.0
rb
1000 MHz
0.4 0.8
1.2 1.6
2.0
0
100
200 400
500
f, FREQUENCY (MHz)
300
700
1000
-2.0 -1.8 -1.2 -0.8 -0.4
0
g
rb
(mmhos)
Figure 5. Rectangular Form
Figure 6. Polar Form
y
ob
, OUTPUT ADMITTANCE
10
10
1000 MHz
9.0
8.0
7.0
8.0
700
6.0
5.0
6.0
4.0
b
ob
4.0
3.0
400
200
100
2.0
1.0
0
2.0
0
g
ob
1000
0
2.0
4.0
6.0
8.0
10
100
200
300
400 500
700
f, FREQUENCY (MHz)
g
ob
(mmhos)
Figure 7. Rectangular Form
Figure 8. Polar Form
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT
−
723
CASE 631AA
−
01
ISSUE D
DATE 10 AUG 2009
SCALE 4:1
NOTES:
−
X
−
1. DIMENSIONING
AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
D
A
b1
−
Y
−
3
E
H
E
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
1
2
MILLIMETERS
2X
b
3X
C
DIM MIN
NOM
0.50
0.21
0.31
0.12
1.20
0.80
MAX
0.55
0.27
0.37
0.17
1.25
0.85
2X
e
0.08 X
Y
A
b
0.45
0.15
0.25
0.07
1.15
0.75
SIDE VIEW
TOP VIEW
b1
C
L
D
1
E
0.40 BSC
1.20
0.29 REF
0.20
e
H
E
L
1.15
0.15
1.25
0.25
L2
GENERIC
3X
L2
MARKING DIAGRAM*
BOTTOM VIEW
STYLE 1:
PIN 1.
BASE
STYLE 2:
PIN 1.
ANODE
2. N/C
STYLE 3:
STYLE 4:
STYLE 5:
PIN 1.
GATE
2. SOURCE
3. DRAIN
PIN 1.
ANODE
2. ANODE
PIN 1.
CATHODE
2. CATHODE
3. ANODE
XX M
1
2. EMITTER
3. COLLECTOR
3. CATHODE
3. CATHODE
XX
M
= Specific Device Code
= Date Code
RECOMMENDED
SOLDERING FOOTPRINT*
*This information is generic. Please refer
to device data sheet for actual part
marking. Pb
−
Free indicator, “G”, may
or not be present.
2X
0.40
2X
0.27
PACKAGE
OUTLINE
1.50
3X
0.52
0.36
DIMENSIONS: MILLIMETERS
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON12989D
SOT
−
723
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
onsemi
,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates
and/or subsidiaries in the United States and/or other countries.
onsemi
owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of
onsemi
’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
.
onsemi
reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as
−
is” and
onsemi
makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does
onsemi
assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using
onsemi
products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by
onsemi
. “Typical” parameters which may be provided in
onsemi
data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
onsemi
does not convey any license
under any of its intellectual property rights nor the rights of others.
onsemi
products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
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associated with such unintended or unauthorized use, even if such claim alleges that
onsemi
was negligent regarding the design or manufacture of the part.
onsemi
is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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T
:
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−
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−
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o
ll Free USA/Canada
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