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MPSH11
MMBTH11
C
E
TO-92
C
E
B
B
SOT-23
Mark: 3G
NPN RF Transistor
This device is designed for common-emitter low noise amplifier
and mixer applications with collector currents in the 100
µ
A to
10 mA range to 300 MHz, and low frequency drift common-
base VHF oscillator applications with high output levels for
driving FET mixers.
Sourced from Process 47.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
V
CEO
V
CBO
V
EBO
I
C
Collector-Emitter Voltage
25
V
V
Collector-Base Voltage
30
3.0
Emitter-Base Voltage
V
Collector Current – Continuous
Operating and Storage Junction Temperature Range
50
mA
-55 to +150
C
°
T
J
, T
stg
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES
:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
MPSH11
*MMBTH11
P
D
Total Device Dissipation
Derate above 25 C
350
2.8
225
1.8
mW
m
W
/ C
°
°
Thermal Resistance, Junction to Case
125
R
θ
C/W
°
JC
Thermal Resistance, Junction to Ambient
357
556
R
θ
C/W
°
JA
*
Device mounted on FR-4 PCB 1.6″ X 1.6″ X 0.06.”
MPSH11/MMBTH11, Rev.
B
2002 Fairchild Semiconductor Corporation
NPN RF Transistor
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
Collector-Emitter Sustaining Voltage*
I
C
= 1.0 mA, I
B
= 0
I =
100 A,
I =
0
25
30
V
V
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
µ
C
E
3.0
V
I =
10 A,
I =
0
µ
E
C
V
CB
= 25 V, I
E
= 0
V
EB
= 2.0 V, I
C
= 0
100
100
nA
nA
I
EBO
Emitter Cutoff Current
ON CHARACTERISTICS
h
FE
DC Current Gain
I
C
= 4.0 mA, V
CE
= 10 V
I
C
= 4.0 mA, I
B
= 0.4 mA
I
C
= 4.0 mA, V
CE
= 10 V
60
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
0.5
V
V
V
CE(
sat
)
V
BE(
on
)
0.95
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain – Bandwidth Product
I
C
= 4.0 mA, V
CE
= 10 V,
f = 100 MHz
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
650
0.6
MHz
Collector-Base Capacitance
0.7
0.9
9.0
pF
pF
pS
C
cb
C
rb
Common-Base Feedback Capacitance
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
Collector Base Time Constant
I
C
= 4.0 mA, V
CB
= 10 V,
f = 31.8 MHz
묬
rb
c
*
Pulse
T
e
st: Pulse Width
≤
300
µ
s, Duty Cycle
≤
2.0%
3
Typical Characteristics
C
o
llector
–
E
mitter Saturation
Volt
a
g
e vs Collec
t
o
r C
u
r
r
e
n
t
DC Cu
r
r
ent Gain
vs Collector Current
0.2
0
.
15
0.1
3
0
0
V
C
E
=
5
V
β
= 1 0
2
5
0
125 °
C
125 °
C
2
0
0
1
5
0
25
25
1
0
0
– 40
°C
0
.
05
50
– 40 °C
0
0.
0
1
0
.
1
1
10
1
0
0
0.1
1
10
20 30
I
C
–
C
O
LLEC
T
O
R
C
U
R
R
ENT (m
A
)
I
C
– COLLE
C
T
OR
C
U
R
R
E
N
T
(
m
A
)
MPSH11/MMBTH11, Rev.
B
NPN RF Transistor
(continued)
Typical Characteristics
(continued)
Base-Emitter Sa
t
u
r
a
tion
Base-Emit
t
e
r ON
V
o
ltage vs
Voltage vs Collector Current
C
o
l
lector Current
1
1
0.8
0.6
0.4
0.2
0.8
– 40 °C
– 40 °C
25
0.6
25
125 °
C
β
= 10
0.4
0.2
125 °
C
V
=
5
.
0V
CE
0
.
01
0.1
1
10
100
0.1
1
10
20 30
I
C
– COLLE
C
T
OR
C
U
R
R
E
N
T
(
m
A
)
I
C
– COLL
E
CTOR CURR
E
N
T
(m
A
)
Power Dissipation vs
Ambient Temperature
C
o
l
l
e
c
tor Cut-Off Current
vs A
m
b
i
ent Tempera
t
u
r
e
350
300
250
200
150
100
50
10
V
=
3
0
V
CB
TO-92
1
SOT-23
0.1
0
25
50
75
1
0
0
1
2
5
150
0
25
50
75
100
125
150
T
A
–
A
M
B
I
ENT
T
E
M
P
E
R
A
T
URE (
C)
°
TEMPER
A
T
URE (
C)
°
Capacitance vs
Reverse Bias Voltage
Contours of Constant Gain
Bandwidth Product (f
T
)
3
2.4
1.8
1.2
0.6
0
50
f = 1.0 MHz
C
ibo
1000 MHz
10
1
9
0
0 MHz
8
0
0 MHz
7
0
0 MHz
6
0
0 MHz
C
CB
5
0
0 MHz
4
0
0 MHz
300 MHz
200 MHz
100 MHz
º
T
A
= 25 C
0.1
0.1
1
10
50
0.1
1
10
100
REVERSE BIAS VOL
T
A
GE (V)
I
C
– COLLECTOR CURRENT (mA)
MPSH11/MMBTH11, Rev.
B
NPN RF Transistor
(continued)
Common Emitter Y Parameters
Input Admittance vs
Collector Current
Input Admittance vs
Collector Current
14
24
20
16
12
8
V
CE
= 10V
f = 200 MHz
V
CE
= 15V
f = 45 MHz
12
10
8
g
ie
g
ie
b
ie
6
b
ie
4
4
2
0
0
0
4
8
12
16
20
0
2
4
6
8
10
I
C
– COLLECTOR CURRENT (mA)
I
C
– COLLECTOR CURRENT (mA)
Input Admittance vs
Frequency
Input Admittance vs
Collector Voltage
20
16
12
8
28
24
20
16
12
8
V
CE
= 15V
I
C
= 7.0 mA
I
C
= 7.0 mA
f = 200 MHz
g
ie
3
b
ie
g
ie
4
4
b
ie
0
0
0
4
8
12
16
20
50
100
200
f – FREQUENCY (MHz)
500
1000
V
CE
– COLLECTOR VO
L
TAGE
Forward Transfer Admittance
vs Collector Current
Forward Transfer Admittance
vs Collector Current
500
120
100
80
60
40
20
0
V
CE
= 15V
f = 45 MHz
V
CE
= 10V
f = 200 MHz
200
100
–
b
fe
g
fe
–
b
fe
10
1
g
fe
0
2
4
6
8
10
0
4
8
12
16
20
24
I
C
– COLLECTOR CURRENT (mA)
I
C
– COLLECTOR CURRENT (mA)
MPSH11/MMBTH11, Rev.
B
NPN RF Transistor
(continued)
Common Emitter Y Parameters
(continued)
Forward Transfer Admittance
vs Collector Voltage
Forward Transfer Admittance
vs Frequency
140
120
100
80
140
V
CE
= 15V
I
C
= 7.0 mA
I
C
= 7.0 mA
f = 45 MHz
g
fe
120
100
80
60
40
20
0
–
b
fe
60
–
b
fe
40
g
fe
20
0
50
100
200
500
1000
0
4
8
12
16
20
f – FREQUENCY (MHz)
V
CE
– COLLECTOR VOL
T
A
GE (V)
Reverse Transfer Admittance
vs Collector Current
Reverse Transfer Admittance
vs Collector Current
0.28
0.24
0.2
0.6
0.5
0.4
0.3
0.2
0.1
0
V
CE
= 15V
f = 45 MHz
V
CE
= 10V
f = 200 MHz
–
b
re
–
b
re
0.16
0.12
0.08
0.04
0
–
g
re
–
g
re
0
2
4
6
8
10
0
4
8
12
16
20
I
C
– COLLECTOR CURRENT (mA)
I
C
– COLLECTOR CURRENT (mA)
Reverse Transfer Admittance
vs Collector Voltage
Reverse Transfer Admittance
vs Frequency
0.4
0.36
0.32
0.28
0.24
0.2
1.4
1.2
1
I
C
= 7.0 mA
f = 45 MHz
V
CE
= 15V
I
C
= 7.0 mA
–
b
re
0.8
0.6
0.4
0.2
0
–
b
re
0.16
0.12
0.08
0.04
0
–
g
re
–
g
re
0
2
4
6
8
10 12 14 16 18 20
50
100
200
500
1000
V
CE
– COLLECTOR VOL
T
A
GE (V)
f – FREQUENCY (MHz)
MPSH11/MMBTH11, Rev.
B
NPN RF Transistor
(continued)
Common Emitter Y Parameters
(continued)
Output Admittance vs
Collector Current
Output Admittance vs
Collector Current
1000
5
V
CE
= 10V
f = 200 MHz
b
oe
b
oe
2
1
g
oe
100
0.5
g
oe
10
V
CE
= 15V
f = 45 MHz
0.2
0.1
1
0
4
8
12
16
20
24
0
2
4
6
8
10
I
C
– COLLECTOR CURRENT (mA)
I
C
– COLLECTOR CURRENT (mA)
Output Admittance
vs Frequency
Output Admittance vs
Collector Voltage
10000
1000
100
10000
V
CE
= 15V
I
C
= 7.0 mA
I
C
= 7.0 mA
f = 45 MHz
b
oe
1000
100
10
b
oe
g
oe
3
g
oe
10
50
100
200
500
1000
0
4
8
12
16
20
24
f – FREQUENCY (MHz)
V
CE
– COLLECTOR VOL
T
A
GE (V)
Power Gain and Noise Figure
vs Collector Current
Conversion Gain
vs Collector Current
35
30
25
20
15
10
5
28
26
24
22
20
V
CC
= 12V
f = 200 MHz
FIG. 2
PG
NF
f
IF
= 45 MHz
f
O
= 200 MHz
f
LO
= 245 MHz
V
CE
= 15V
FIG. 1
0
18
0
0
2
4
6
8
10
1
2
3
4
5
I
C
– COLLECTOR CURRENT (mA)
I
C
– COLLECTOR CURRENT (mA)
MPSH11/MMBTH11, Rev.
B
NPN RF Transistor
(continued)
Test Circuits
V
CC
= 12 V
270
Ω
1000 pF
1000 pF
200 mHz Output into
50
Ω
L2
R
L
R
S
100 pF
200 mHz
Input
0.8-10 pF
L1
1000 pF
390
Ω
1000 pF
L1 – Ohmite Z-235 RFC
L2 – L6 turns No. 14 wire, 1 inch L x 1/4 inch ID tapped 1
1/2 turns from cold side
2.2 K
Ω
V
BB
FIGURE 1: Unneutralized 200 MHz PG and NF Test Circuit
MPSH11/MMBTH11, Rev.
B
NPN RF Transistor
(continued)
Test Circuits
(continued)
T1
4.0-30 pF
50
Ω
Output
0.002
µ
F
2K
Ω
50
Ω
Input
2.2 K
Ω
1/2 W
1000 pF
1000 pF
1000 pF
390
Ω
1/2 W
270
Ω
1/2 W
R.F. Beads
T1 – Q3
T
o
roid 4:1 ratio
No. 22 wire
}
8 turns Pri.
2 turns Sec.
V
CC
= 12 V
V
AGC
FIGURE 2: 45 MHz Power Gain Circuit
2
00 mHz Output into
50
Ω
T
1
300 pF
RF
in
1.1 pF
20pF
45 mHz Output
into 50
Ω
3
2.0 pF
L
1
LO
in
245 mHz
Input into
50
Ω
1000 pF
1000 pF
47 K
Ω
L1 – Ohmite RFC Z235
T1 – Primary 5 turns No. 34 wire 1/4 inch
diameter. Secondary runs No. 34 wire close
wound over a Q100 core (10.7 mHz). When
terminated on secondary side with 50
Ω
primary
measures 1.5 K, -25 pF.
V
BB
V
CE
V
CE
= 15 V
FIGURE 3: 200 MHz Conversion Gain Test Circuit
MPSH11/MMBTH11, Rev.
B
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
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. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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