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MPSH81
MMBTH81
C
E
TO-92
C
B
E
SOT-23
Mark: 3D
B
PNP RF Transistor
This device is designed for general RF amplifier and mixer
applications to 250 mHz with collector currents in the 1.0 mA
to 30 mA range. Sourced from Process 75.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
V
CEO
V
CBO
V
EBO
I
C
Collector-Emitter Voltage
20
V
V
Collector-Base Voltage
20
3.0
Emitter-Base Voltage
V
Collector Current – Continuous
Operating and Storage Junction Temperature Range
50
mA
-55 to +150
C
°
T
J
, T
stg
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3)
All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics
TA = 25
°
C unless otherwise noted
Symbol
Characteristic
Max
Units
MPSH81
*MMBTH81
P
D
Total Device Dissipation
Derate above 25 C
350
2.8
225
1.8
mW
m
W
/ C
°
°
Thermal Resistance, Junction to Case
125
R
θ
C/W
°
JC
Thermal Resistance, Junction to Ambient
357
556
R
θ
C/W
°
JA
*
Device mounted on FR-4 PCB 1.6″ X 1.6″ X 0.06.”
1997 Fairchild Semiconductor Corporation
PNP RF Transistor
(continued)
Electrical Characteristics
TA = 25
°
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
Collector-Emitter Breakdown Voltage*
I
C
= 1.0 mA, I
B
= 0
20
20
V
V
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
I =
10 A,
I =
0
µ
C
E
3.0
V
I =
10 A,
I =
0
µ
E
C
V
CB
= 10 V, I
E
= 0
V
EB
= 2.0 V, I
C
= 0
100
100
nA
nA
I
EBO
Emitter Cutoff Current
ON CHARACTERISTICS
h
FE
DC Current Gain
I
C
= 5.0 mA, V
CE
= 10 V
I
C
= 5.0 mA, I
B
= 0.5 mA
I
C
= 5.0 mA, V
CE
= 10 V
60
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
0.5
0.9
V
V
V
CE(
sat
)
V
BE(
on
)
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain – Bandwidth Product
I
C
= 5.0 mA, V
CE
= 10 V,
f = 100 MHz
600
MHz
Collector-Base Capacitance
Collector Emitter Capcitance
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
0.85
0.65
pF
pF
C
cb
C
ce
V
CB
= 10 V, I
B
= 0, f = 1.0 MHz
*
Pulse
T
e
st: Pulse Width
≤
300
µ
s, Duty Cycle
≤
2.0%
NOTE:
All voltages (V) and currents (A) are negative polarity for PNP transistors.
3
Spice Model
PNP(Is=10f Xti=3 Eg=1.11 Vaf=100 Bf=133.8 Ise=1.678p Ne=2.159 Ikf=.1658 Nk=.901 Xtb=1.5 Var=100 Br=1
Isc=9.519n Nc=3.88 Ikr=5.813 Rc=7.838 Cjc=2.81p Mjc=.1615 Vjc=.8282 Fc=.5 Cje=2.695p Mje=.3214 Vje=.7026
Tr=11.32n Tf=97.83p Itf=69.29 Xtf=599u Vtf=10)
Typical Characteristics
DC
C
u
r
r
e
n
t
G
ain vs
C
o
l
lector Current
Collector Sa
t
u
r
a
tion Voltage
vs Co
l
l
ector C
u
r
rent
–
2
0
0
1
8
0
1
6
0
1
4
0
1
2
0
1
0
0
80
1
I
= 10 I
B
C
V
= 1
.
0
V
CE
–
0.5
T
=
1
25°C
A
–
–
0.2
0.1
T
= 25°C
T =
12
5
°
C
A
T
= 2
5
°
C
A
A
–
T
=
–
5
5
°
C
0
.
05
A
T
=
–
55°C
60
A
40
–
–
0
.
02
0
.
01
20
0
–
1
0
0
–
–
10
–
–
–
100
–
0.1
1
–
0.1
1
10
I
C
– COLLEC
T
O
R CUR
R
E
NT(m
A
)
I
C
–
C
O
LLE
C
T
OR CU
R
R
E
N
T (
m
A
)
PNP RF Transistor
(continued)
Typical Characteristics
(continued)
B
a
s
e-Emi
t
t
er
O
N
V
o
ltage
vs Collector Current
Base
–
E
mitter Saturation
Volt
a
g
e vs Collec
t
o
r C
u
r
r
e
n
t
1
0.8
0.6
0.4
0.2
-1.6
V
= 1
0
V
I
= 10
I
B
CE
C
T
= 25
°
C
A
-1.4
-1.2
-1
T
= 100
°
C
A
T
=
–
55
°
C
=
1
25
°
C
A
-0.8
-0.6
-0.4
T
= 25
°
C
A
T
A
0
–
–
–
100
–
–
100
–
0.1
1
10
–
–
0.1
1
10
I
C
–
C
O
LLE
C
T
OR CU
R
R
ENT (
m
A
)
I
C
–
C
O
LLE
C
T
OR CU
R
R
E
N
T
(
m
A
)
Input / Output Capacitance
vs Reverse Bias Voltage
C
o
l
l
e
c
tor Reverse Current
vs A
m
b
i
ent Te
m
p
era
t
u
r
e
3
2.8
2.6
2.4
2.2
2
1
0
0
10
f = 1.0 MHz
V
= –
6
.
0
V
CE
1
1.8
1.6
1.4
1.2
1
C
o
b
o
V
= –
3
.
0
V
CE
0.1
0
.
01
C
ibo
25
50
75
100
125
150
0
-2
-4
-6
-8
-10
T
A
–
A
M
B
I
ENT
T
E
MPE RA
T
URE (
C)
°
REVERSE BIAS VO
L
TAGE (V)
Power Dissipation vs
Ambient Temperature
Contours of Constant Gain
Bandwidth Product (f
T
)
350
300
250
200
150
100
50
-14
-12
-10
-8
TO-92
1500 MHz
1200 MHz
SOT-23
-6
-4
500 MHz
200 MHz
-2
200 MHz
500 MHz
900 MHz
0
0
–
–
100
–
–
0.1
1
10
0
25
50
75
100
125
150
I
C
– COLLECTOR CURRENT (mA)
TEMPER
A
T
URE (
C)
°
TO-92 Tape and Reel Data
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Figure 1.0
TAPE and REEL OPTION
See Fig 2.0 for various
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FSCINT Label sample
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FLAT OF TRANSISTOR IS ON TOP
FIRST WIRE OFF IS EMITTER
ADHESIVE TAPE IS ON THE TOP SIDE
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ORDER STYLE
D74Z (M)
ORDER STYLE
D75Z (P)
FIRST WIRE OFF IS COLLECTOR (ON PKG. 92)
ADHESIVE TAPE IS ON BOTTOM SIDE
FLAT OF TRANSISTOR IS ON TOP
FIRST WIRE OFF IS EMITTER (ON PKG. 92)
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Hd
P
Pd
b
Ha
W1
d
S
L
H1
HO
L1
WO
t
W2
W
t1
P1 F1
P2
DO
ITEM DESCRIPTION
SYMBOL
DIMENSION
PO
b
0.098 (max)
Base of Package to Lead Bend
Component Height
Ha
HO
H1
Pd
Hd
P
0.928 (+/- 0.025)
0.630 (+/- 0.020)
0.748 (+/- 0.020)
0.040 (max)
User Direction of Feed
Lead Clinch Height
Component Base Height
Component Alignment ( side/side )
Component Alignment ( front/back )
Component Pitch
0.031 (max)
0.500 (+/- 0.020)
0.500 (+/- 0.008)
0.150 (+0.009, -0.010)
0.247 (+/- 0.007)
0.104 (+/- 0 .010)
0.018 (+0.002, -0.003)
0.429 (max)
PO
P1
P2
F1/F2
d
Feed Hole Pitch
Hole Center to First Lead
Hole Center to Component Center
Lead Spread
Lead Thickness
L
Cut Lead Length
L1
t
0.209 (+0.051, -0.052)
0.032 (+/- 0.006)
0.021 (+/- 0.006)
0.708 (+0.020, -0.019)
0.236 (+/- 0.012)
0.035 (max)
Taped Lead Length
Taped Lead Thickness
Carrier Tape Thickness
Carrier Tape Width
t1
W
TO-92 Reel
Configuration:
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Hold – down Tape Width
Hold – down Tape position
Feed Hole Position
WO
W1
W2
DO
S
0.360 (+/- 0.025)
0.157 (+0.008, -0.007)
0.004 (max)
Sprocket Hole Diameter
Lead Spring Out
Note : All dimensions are in inches.
E
L
E
CTR
O
S
TATIC
S
E
N
S
I
TIVE
D
E
V
I
CES
D4
D1
ITEM DESCRIPTION
SYSMBOL MINIMUM
MAXIMUM
D2
Reel Diameter
D1
D2
D2
D3
D4
W1
W2
W3
13.975
1.160
0.650
3.100
2.700
0.370
1.630
14.025
1.200
0.700
3.300
3.100
0.570
1.690
2.090
F63TNR Label
Arbor Hole Diameter (Standard)
(Small Hole)
Customized Label
Core Diameter
Hub Recess Inner Diameter
Hub Recess Depth
Flange to Flange Inner Width
Hub to Hub Center Width
W1
W3
W2
Note: All dimensions are inches
D3
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escription:
Cus
t
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i
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a
b
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SO
T
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a di
s
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ca
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R
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Note/Commen
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a
m
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Human rea
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8
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e
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i
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Components
Tr
a
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ler T
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Lea
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300
m
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k
ets
500
m
m
m
i
n
i
mu
m
o
r
125 empty po
c
k
e
t
s
September 1999, Rev. C
©2000 Fairchild Semiconductor International
SOT-23 Tape and Reel Data, continued
SOT-23 Embossed Carrier Tape
Configuration:
Figure 3.0
P0
P2
D0
D1
T
E1
E2
W
F
Wc
B0
Tc
K0
A0
P1
User Direction of Feed
Dimensions are in millimeter
E1 E2
A0
B0
W
D0
D1
F
P1
P0
K0
T
Wc
5.2
Tc
Pkg type
SOT-23
(8mm)
3.15
+/-0.10
2.77
+/-0.10
8.0
+/-0.3
1.55
+/-0.05
1.125
1.75
+/-0.10
6.25
min
3.50
+/-0.05
4.0
+/-0.1
4.0
+/-0.1
1.30
+/-0.10
0.228
+/-0.013
0.06
+/-0.02
+/-0.125
+/-0.3
Notes: A0,
B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
0.5mm
maximum
20 deg maximum
Typical
component
cavity
center line
0.5mm
maximum
B0
20 deg maximum component rotation
Typical
component
center line
Sketch A (Side or Front Sectional View)
Component Rotation
Sketch C (Top View)
Component lateral movement
A0
Sketch B (Top View)
Component Rotation
SOT-23 Reel Configuration:
Figure 4.0
W1 Measured at Hub
Dim A
Max
Dim A
max
See detail AA
Dim N
7
“
D
iameter Option
B Min
Dim C
See detail AA
Dim D
min
W3
13″ Diameter Option
W2 max Measured at Hub
DETAIL AA
Dim W2
Dimensions are in inches and millimeters
Reel
Option
Tape Size
8mm
Dim A
Dim B
Dim C
Dim D
Dim N
Dim W1
Dim W3 (LSL-USL)
7.00
177.8
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
2.165
55
0.331 +0.059/-0.000
8.4 +1.5/0
0.567
14.4
0.311 – 0.429
7.9 – 10.9
7″ Dia
13.00
330
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
4.00
100
0.331 +0.059/-0.000
8.4 +1.5/0
0.567
14.4
0.311 – 0.429
7.9 – 10.9
8mm
13″ Dia
September 1999, Rev. C
SOT-23 Package Dimensions
SOT-23 (FS PKG Code 49)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram):
0.0082
September 1998, Re
v
.
A
1
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