onsemi-MMDFS3P303R2
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MMDFS3P303
Power MOSFET
3 Amps, 30 Volts
P
−
Channel SO
−
8, FETKY
t
The FETKY product family incorporates low R
, MOSFETs
DS(on)
packaged with industry leading, low forward drop, low leakage
Schottky Barrier rectifiers to offer high efficiency components in a
space saving configuration. Independent pinouts for MOSFET and
Schottky die allow the flexibility to use a single component for
switching and rectification functions in a wide variety of applications
such as Buck Converter, Buck
−
Boost, Synchronous Rectification,
Low
V
o
ltage Motor Control, and Load Management in Battery Packs,
Chargers, Cell Phones and other Portable Products.
3 AMPERES
30 VOLTS
R
DS(on)
= 100 m
W
V
F
= 0.42 Volts
P
−
Channel
•
Power MOSFET with Low V , Low I
Schottky Rectifier
F
R
•
Lower Component Placement and Inventory Costs along with
Board Space Savings
D
•
R2 Suffix for Tape and Reel (2500 units/13
″
reel)
•
Mounting Information for SO
−
8 Package Provided
G
•
I
Specified at Elevated Temperature
DSS
•
Applications Information Provided
•
Marking: 3P303
S
MARKING
DIAGRAM
MOSFET MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
J
Rating
Symbol
Value
30
Unit
Vdc
Vdc
Vdc
SO
−
8
CASE 751
STYLE 18
6N303
LYWW
Drain
−
to
−
Source Voltage
V
DSS
8
Drain
−
to
−
Gate Voltage (R
= 1.0 M
W
)
V
30
GS
DGR
1
Gate
−
to
−
Source Voltage
−
Continuous
V
“
20
GS
Drain Current
−
Continuous @ T
= 25
°
C
−
Continuous @ T
= 100
°
C
−
Single Pulse (tp
v
10
m
s)
L
Y
WW
= Location Code
= Year
= Work Week
I
I
3.5
2.25
12
Adc
A
D
D
A
I
Apk
DM
T
o
tal Power Dissipation @ T
= 25
°
C
P
2.0
Watts
A
D
PIN ASSIGNMENT
Single Pulse Drain
−
to
−
Source Avalanche
E
375
mJ
Anode
Anode
Source
Cathode
Cathode
Drain
AS
1
2
3
4
8
7
6
5
Energy
−
STARTING T
= 25
°
C
J
V
DD
= 30 Vdc, V
= 10 Vdc, V
= 20 Vdc,
GS DS
I =
9.0 Apk, L = 10 mH, R
= 25
W
L
G
Gate
Drain
1. Negative
sign for P
−
channel device omitted for clarity.
2. Pulse
T
e
st: Pulse Width
≤
250
μ
s, Duty Cycle
≤
2.0%.
3. Mounted
on 2
″
square FR4 board (1
″
sq. 2 oz. Cu 0.06
″
thick single sided),
T
o
p View
10 sec. max.
ORDERING INFORMATION
Device
MMDFS3P303R2
Package
Shipping
2500
T
a
pe & Reel
SO
−
8
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
August, 2006
−
Rev. 3
MMDFS3P303/D
MMDFS3P303
SCHOTTKY RECTIFIER MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
J
Peak Repetitive Reverse Voltage
DC Blocking Voltage
V
V
30
3.0
6.0
30
Volts
Amps
Amps
Amps
RRM
R
I
O
(Rated V
) T
= 100
°
C
R
A
I
frm
(Rated V
, Square Wave, 20 kHz) T
= 105
°
C
R
A
Non
−
Repetitive Peak Surge Current
I
fsm
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)
THERMAL CHARACTERISTICS
−
SCHOTTKY AND MOSFET
Operating and Storage
T
e
mperature Range
201
105
°
C/W
R
R
R
R
R
R
q
q
q
q
q
q
JA
JA
JA
JA
JA
JA
62.5
197
97
62.5
T , T
j
−
55 to 150
°
C
stg
3. Mounted
on 2
″
square FR4 board (1
″
sq. 2 oz. Cu 0.06
″
thick single sided), 10 sec. max.
1. Mounted
with minimum recommended pad size, PC Board FR4.
2. Mounted
on 2
″
square FR4 board (1
″
sq. 2 oz. Cu 0.06
″
thick single sided), Steady State.
J
Characteristics
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
−
Source Voltage
(V =
0 Vdc, I
= 0.25 mA)
T
e
mperature Coefficient (Positive)
V
(BR)DSS
30
−
−
27
−
−
Vdc
mV/
°
C
GS
D
Zero Gate Drain Current
(V =
30 Vdc, V
= 0 Vdc)
I
I
−
−
−
−
1.0
10
μ
Adc
DS
GS
DSS
GSS
(V =
30 Vdc, V
= 0 Vdc, T
= 125
°
C)
DS
GS
J
Gate Body Leakage Current
(V =
±
20 Vdc, V
= 0)
−
−
100
nAdc
GS
DS
Gate Threshold Voltage
(V =
V ,
I =
0.25 mA)
T
e
mperature Coefficient (Negative)
V
1.0
−
1.7
3.5
−
−
Vdc
mV/
°
C
DS
GS
D
GS(th)
Static Drain
−
Source Resistance (V
= 10 Vdc, I
= 3.5 Adc)
R
DS(on)
−
−
0.085
0.130
0.100
0.160
W
GS
D
(V =
4.5 Vdc, I
= 2.0 Adc)
GS
D
Forward Transconductance (V
= 15 Vdc, I
= 3.5 Adc)
g
FS
−
5.0
−
mhos
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
C
−
−
−
405
200
55
−
−
−
pF
ns
iss
(V =
25 Vdc, V
= 0 Vdc,
DS
GS
Output Capacitance
C
oss
f = 1.0 MHz)
Reverse Transfer Capacitance
C
rss
Turn
−
On Delay Time
t
−
−
−
−
12.5
16
25
30
90
65
d(on)
(V =
20 Vdc, I
= 2.0 Adc,
DD
D
Rise Time
t
r
V
= 10 Vdc,
GS
Turn
−
Off Delay Time
Fall Time
t
50
d(off)
R
G
= 6.0
Ω
)
t
35
f
1. Negative
signs for P
−
Channel device omitted for clarity.
3. Pulse
T
e
st: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
4. Switching
characteristics are independent of operating junction temperature.
2
MMDFS3P303
J
Characteristics
Symbol
Min
Typ
Max
Unit
Turn
−
On Delay Time
t
t
−
−
−
−
−
−
−
−
19
36
−
−
ns
d(on)
(V =
20 Vdc, I
= 2.0 Adc,
DD
D
Rise Time
t
r
V
= 4.5 Vdc,
GS
Turn
−
Off Delay Time
Fall Time
27
−
d(off)
R
G
= 6.0
Ω
)
t
31
−
f
Gate Charge
Q
T
Q
1
Q
2
Q
3
14
25
−
nC
1.8
4.5
2.85
(V =
20 Vdc, I
= 3.5 Adc,
DS
D
V
= 10 Vdc)
GS
−
−
DRAIN SOURCE DIODE CHARACTERISTICS
(I =
1.7 Adc, V
= 0 Vdc)
V
SD
−
−
−
−
−
0.9
26.6
18.8
7.8
1.2
−
V
S
GS
Reverse Recovery Time
t
ns
rr
t
−
a
(V =
0 V, I
= 3.5 A,
GS
S
t
−
b
dIS/dt = 100 A/
μ
s)
Reverse Recovery Stored
Charge
Q
0.03
−
μ
C
RR
SCHOTTKY RECTIFIER ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
C
V
T =
25
°
C
J
T =
125
°
C
J
Volts
F
I
I
I
= 100 mAdc
= 3.0 Adc
= 6.0 Adc
F
F
F
0.28
0.42
0.50
0.13
0.33
0.45
I
T =
25
°
C
T =
125
°
C
m
A
V
R
J
J
= 30 V
= 30 V
R
250
−
−
25
mA
Maximum Voltage Rate of Change
V
dV/dt
10,000
V/
m
s
R
1. Negative
signs for P
−
Channel device omitted for clarity.
6. Pulse
T
e
st: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
7. Switching
characteristics are independent of operating junction temperature.
3
MMDFS3P303
TYPICAL FET ELECTRICAL CHARACTERISTICS
6.0
5.0
4.0
3.0
2.0
6.0
10 V
6.0 V
5.0 V
4.5 V
T =
25
°
C
V
≥
10 V
J
DS
4.0 V
5.0
4.0
3.0
2.0
3.7 V
3.5 V
3.3 V
25
°
C
3.0 V
1.0
0
1.0
0
100
°
C
V
= 2.7 V
GS
T =
−
5
5
°
C
J
0
0.25
0.5
0.75
1.0
1.25
1.5
1.75
2.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V ,
GATE−TO−SOURCE VOLTAGE (VOLTS)
GS
DS
Figure 1. On
−
Region Characteristics
Figure 2. Transfer Characteristics
0.7
0.6
0.5
0.4
0.3
0.2
0.18
0.16
0.14
0.12
0.10
0.08
T =
25
°
C
J
T =
25
°
C
J
I =
3.5 A
D
V
= 4.5 V
GS
10 V
0.1
0
0.06
0.04
2.0
4.0
6.0
8.0
10
1.0 1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
V
, GATE−TO−SOURCE VOLTAGE (VOLTS)
I ,
DRAIN CURRENT (AMPS)
D
GS
Figure 3. On
−
Resistance versus
Gate
−
T
o
−
Source Voltage
Figure 4. On
−
Resistance versus Drain Current
and Gate Voltage
1000
100
1.8
1.6
1.4
1.2
1.0
0.8
V
= 0 V
GS
V
= 10 V
I =
1.5 A
GS
T =
125
°
C
J
D
100
°
C
10
0.6
0.4
1.0
−50
−25
0
25
50
75
100
125
150
0
5.0
V
10
15
20
25
30
T , JUNCTION TEMPERATURE (
°
C)
J
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
Figure 5. On
−
Resistance Variation with
Figure 6. Drain
−
To
−
Source Leakage
Temperature
Current versus Voltage
4
MMDFS3P303
TYPICAL FET ELECTRICAL CHARACTERISTICS
1200
1000
800
12
25
20
15
10
V
= 0
V
= 0
GS
DS
Q
T
C
iss
T =
25
°
C
10
8.0
6.0
4.0
J
V
GS
C
rss
Q1
Q2
600
C
iss
I =
3.5 A
D
400
C
oss
5.0
0
200
0
T =
25
°
C
J
Q3
2.0
0
C
rss
V
DS
−10
−5.0
0
5.0
10
15
20
25
30
0
2.0
4.0
6.0
8.0
10
12
14
Q ,
TOTAL GATE CHARGE (nC)
G
V
V
DS
GS
Figure 8. Gate
−
To
−
Source and
Drain
−
T
o
−
Source Voltage versus Total Charge
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
1000
100
2.5
V
= 10 V
GS
V
= 0 V
T =
25
°
C
GS
J
I =
2.0 A
T =
25
°
C
J
2.0
1.5
1.0
D
V
= 15 V
DD
t
t
d(off)
t
f
t
r
10
d(on)
0.5
0
1.0
1.0
10
R ,
GATE RESISTANCE (OHMS)
100
0
0.2
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
SD
0.4
0.6
0.8
1.0
V
G
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
450
400
350
300
250
200
150
100
100
10
V
= 12 V
SINGLE PULSE
GS
I =
3.5 A
D
1.0 ms
T =
25
°
C
A
10 ms
1.0
dc
0.1
R
LIMIT
DS(on)
THERMAL LIMIT
PACKAGE LIMIT
50
0
0.01
0.1
1.0
10
100
25
50
75
100
125
150
V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
T , STARTING JUNCTION TEMPERATURE (
°
C)
J
DS
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
5
MMDFS3P303
TYPICAL FET ELECTRICAL CHARACTERISTICS
1.0
D = 0.5
0.2
0.1
NORMALIZED TO R
AT STEADY STATE (1
″
PAD)
q
JA
0.1
0.05
2.32
W
0.0014 F
0.0073 F
0.022 F
0.105 F
0.484 F
3.68 F
AMBIENT
18.5
W
50.9
W
37.1
W
56.8
W
24.4
W
CHIP
JUNCTION
0.02
0.01
SINGLE PULSE
1E−02
0.01
1E−03
1E−01
1E+00
t, TIME (s)
1E+01
1E+02
1E+03
Figure 13. FET Thermal Response
di/dt
I
S
t
rr
t
a
t
b
TIME
0.25 I
t
p
S
I
S
Figure 14. Diode Reverse Recovery Waveform
TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS
10
10
85
°
C
25
°
C
85
°
C
T =
125
°
C
J
−ꢀ4
0
°
C
T =
125
°
C
J
25
°
C
1.0
1.0
0.1
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
V , INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
F
V , MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
F
Figure 15. Typical Forward Voltage
Figure 16. Maximum Forward Voltage
6
MMDFS3P303
TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS
0.1
0.1
T =
125
°
C
J
T =
125
°
C
J
0.01
0.01
0.001
85
°
C
0.001
25
°
C
0.0001
0.0001
0.00001
25
°
C
0.00001
0.000001
0.000001
0
5.0
10
15
20
25
30
0
5.0
10
15
20
25
30
V ,
REVERSE VOLTAGE (VOLTS)
R
V ,
REVERSE VOLTAGE (VOLTS)
R
Figure 17. Typical Reverse Current
Figure 18. Maximum Reverse Current
1000
100
10
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
dc
FREQ = 20 kHz
SQUARE WAVE
I /I =
p
pk o
I /I =
5.0
pk o
I /I =
10
pk o
I /I =
20
pk o
0.5
0
0
5.0
10
15
20
25
30
0
20
40
60
80
100
120
140
160
V ,
REVERSE VOLTAGE (VOLTS)
R
T ,
AMBIENT TEMPERATURE (
°
C)
A
Figure 19. Typical Capacitance
Figure 20. Current Derating
1.75
1.50
1.25
1.00
dc
SQUARE
WAVE
I /I =
p
pk o
I /I =
5.0
pk o
I /I =
10
pk o
0.75
0.50
I /I =
20
pk o
0.25
0
0
1.0
2.0
3.0
4.0
5.0
I ,
AVERAGE FORWARD CURRENT (AMPS)
O
Figure 21. Forward Power Dissipation
7
MMDFS3P303
TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS
1.0
0.1
D = 0.5
0.2
0.1
NORMALIZED TO R
AT STEADY STATE (1
″
PAD)
0.05
q
JA
0.02
0.01
0.1010
W
1.2674
W
27.987
W
30.936
W
36.930
W
39.422
m
F 493.26
m
F 0.0131
F
0.2292 F
2.267 F
AMBIENT
CHIP
JUNCTION
0.01
SINGLE PULSE
0.001
1.0E−05
1.0E−04
1.0E−03
1.0E−02
1.0E−01
1.0E+00
1.0E+01
1.0E+02
1.0E+03
t, TIME (s)
Figure 22. Schottky Thermal Response
TYPICAL APPLICATIONS
STEP DOWN SWITCHING REGULATORS
L
O
+
+
V
in
C
V
out
LOAD
O
−
−
Buck Regulator
L
O
+
+
V
in
C
V
out
LOAD
O
−
−
Synchronous Buck Regulator
8
MMDFS3P303
TYPICAL APPLICATIONS
STEP UP SWITCHING REGULATORS
L1
+
+
V
in
C
V
out
LOAD
O
Q1
−
−
Boost Regulator
+
+
V
in
C
V
out
LOAD
O
−
−
Buck
−
Boost Regulator
MULTIPLE BATTERY CHARGERS
Buck Regulator/Charger
Q1
Q2
D2
L
O
BATT #1
+
D1
V
in
C
O
−
Q3
D3
BATT #2
9
MMDFS3P303
TYPICAL APPLICATIONS
Li
−
lon BATTERY PACK APPLICATIONS
Battery Pack
PACK +
Li−Ion
BATTERY
CELLS
SMART IC
DISCHARGE
CHARGE
Q1
Q2
PACK −
SCHOTTKY
SCHOTTKY
•
•
•
•
Applicable in battery packs which require a high current level.
During charge cycle Q2 is on and Q1 is off. Schottky can reduce power loss during fast charge.
During discharge Q1 is on and Q2 is off. Again, Schottky can reduce power dissipation.
Under normal operation, both transistors are on.
SO
−
8 FOOTPRINT
0.060
1.52
0.275
7.0
0.155
4.0
0.024
0.6
0.050
1.270
inches
mm
10
MMDFS3P303
PACKAGE DIMENSIONS
SO
−
8
CASE 751
−
07
ISSUE V
−
X
−
NOTES:
1. DIMENSIONING
AND TOLERANCING PER ANSI
Y14.5M, 1982.
A
2. CONTROLLING
DIMENSION: MILLIMETER.
3. DIMENSION
A AND B DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM
MOLD PROTRUSION 0.15 (0.006) PER
SIDE.
5. DIMENSION
D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN
EXCESS OF THE D DIMENSION AT MAXIMUM
MATERIAL CONDITION.
8
5
4
S
M
M
B
0.25 (0.010)
Y
1
K
−
Y
−
G
MILLIMETERS
INCHES
DIM MIN
MAX
5.00
4.00
1.75
0.51
MIN
MAX
0.197
0.157
0.069
0.020
A
B
C
D
G
H
J
4.80
3.80
1.35
0.33
0.189
0.150
0.053
0.013
0.050 BSC
0.004
C
N
X 45
_
SEATING
PLANE
−
Z
−
1.27 BSC
0.10 (0.004)
0.10
0.19
0.40
0
0.25
0.25
1.27
8
0.010
0.010
0.050
8
M
0.007
0.016
0
J
H
D
K
M
N
S
_
_
_
_
0.25
5.80
0.50
6.20
0.010
0.228
0.020
0.244
M
S
S
X
0.25 (0.010)
Z
Y
STYLE 18:
PIN 1.
ANODE
2. ANODE
3. SOURCE
4. GATE
5. DRAIN
6. DRAIN
XXXXXX
ALYW
7. CATHODE
8. CATHODE
FETKY is a trademark of International Rectifier Corporation.
ON Semiconductor
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