onsemi-MMUN2113LT3G
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MUN2113, MMUN2113L,
MUN5113, DTA144EE,
DTA144EM3, NSBA144EF3
Digital
T
r
ansistors (BRT)
R1 = 47 k
W
, R2 = 47 k
W
PNP Transistors with Monolithic Bias
Resistor Network
PIN CONNECTIONS
PIN 3
COLLECTOR
(OUTPUT)
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base
−
emitter resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space.
PIN 1
BASE
(INPUT)
R1
R2
PIN 2
EMITTER
(GROUND)
Features
MARKING DIAGRAMS
•
Simplifies Circuit Design
•
Reduces Board Space
•
Reduces Component Count
•
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified
and PPAP Capable
SC
−
59
CASE 318D
STYLE 1
XX M
G
G
1
SOT
−
23
CASE 318
STYLE 6
•
These Devices are Pb
−
Free, Halogen Free/BFR Free and are RoHS
XXX M
G
G
Compliant
1
MAXIMUM RATINGS
(T =
25
°
C)
A
SC
−
70/SOT
−
323
CASE 419
Rating
Collector
−
Base Voltage
Collector
−
Emitter Voltage
Collector Current
−
Continuous
Input Forward Voltage
Symbol
Max
50
Unit
Vdc
XX M
G
V
CBO
CEO
G
STYLE 3
1
V
50
Vdc
I
C
100
40
mAdc
Vdc
SC
−
75
CASE 463
STYLE 1
XX M
XX M
V
IN(fwd)
1
Input Reverse Voltage
V
IN(rev)
10
Vdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
SOT
−
723
CASE 631AA
STYLE 1
1
SOT
−
1123
CASE 524AA
STYLE 1
X M
1
XXX
M
G
=
=
=
Specific Device Code
Date Code*
Pb
−
Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
©
Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
October, 2016
−
Rev. 5
DTA144E/D
MUN2113, MMUN2113L, MUN5113, DTA144EE, DTA144EM3, NSBA144EF3
Table 1. ORDERING INFORMATION
†
Device
Part Marking
Package
Shipping
MUN2113T1G, SMUN2113T1G*
6C
SC
−
59
3000 /
T
a
pe & Reel
3000 /
T
a
pe & Reel
10000 /
T
a
pe & Reel
3000 /
T
a
pe & Reel
10000 /
T
a
pe & Reel
3000 /
T
a
pe & Reel
8000 /
T
a
pe & Reel
8000 /
T
a
pe & Reel
(Pb
−
Free)
MMUN2113LT1G, SMMUN2113LT1G*
MMUN2113LT3G, NSVMMUN2113LT3G*
MUN5113T1G, SMUN5113T1G*
MUN5113T3G
A6C
A6C
6C
6C
6C
6C
E
SOT
−
23
(Pb
−
Free)
SOT
−
23
(Pb
−
Free)
SC
−
70/SOT
−
323
(Pb
−
Free)
SC
−
70/SOT
−
323
(Pb
−
Free)
DTA144EET1G, NSVDTA144EET1G*
DTA144EM3T5G
SC
−
75
(Pb
−
Free)
SOT
−
723
(Pb
−
Free)
NSBA144EF3T5G
SOT
−
1123
(Pb
−
Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
300
250
(1) SC
−
75 and SC
−
70/SOT
−
323; Minimum Pad
(2) SC
−
59; Minimum Pad
200
(1) (2)
(3) (4)
(5)
(3) SOT
−
23; Minimum Pad
(4) SOT
−
1123; 100 mm
, 1 oz. copper trace
(5) SOT
−
723; Minimum Pad
2
150
100
50
0
−
50
−
25
0
25
50
75
100
125 150
AMBIENT TEMPERATURE (
°
C)
Figure 1. Derating Curve
2
MUN2113, MMUN2113L, MUN5113, DTA144EE, DTA144EM3, NSBA144EF3
Table 2. THERMAL CHARACTERISTICS
Characteristic
THERMAL CHARACTERISTICS (SC
−
59) (MUN2113)
T
o
tal Device Dissipation
Symbol
Max
Unit
P
D
T =
25
°
C
230
338
1.8
2.7
mW
A
Derate above 25
°
C
mW/
°
C
Thermal Resistance,
Junction to Ambient
R
540
370
°
C/W
°
C/W
°
C
q
JA
Thermal Resistance,
R
264
287
q
JL
Junction and Storage
T
e
mperature Range
THERMAL CHARACTERISTICS (SOT
−
23) (MMUN2113L)
T
o
tal Device Dissipation
T , T
J
−
55 to +150
stg
P
D
T =
25
°
C
246
400
2.0
3.2
mW
A
Derate above 25
°
C
mW/
°
C
Thermal Resistance,
Junction to Ambient
(Note 1)
R
R
508
311
°
C/W
°
C/W
°
C
q
JA
Thermal Resistance,
174
208
q
JL
Junction and Storage
T
e
mperature Range
THERMAL CHARACTERISTICS (SC
−
70/SOT
−
323) (MUN5113)
T
o
tal Device Dissipation
T , T
J
−
55 to +150
stg
P
D
T =
25
°
C
202
310
1.6
2.5
mW
A
Derate above 25
°
C
mW/
°
C
Thermal Resistance,
Junction to Ambient
R
R
618
403
°
C/W
°
C/W
°
C
q
JA
Thermal Resistance,
280
332
q
JL
Junction and Storage
T
e
mperature Range
THERMAL CHARACTERISTICS (SC
−
75) (DTA144EE)
T
o
tal Device Dissipation
T , T
J
−
55 to +150
stg
P
D
T =
25
°
C
200
300
1.6
2.4
mW
A
Derate above 25
°
C
mW/
°
C
Thermal Resistance,
Junction to Ambient
R
600
400
°
C/W
°
C
q
JA
Junction and Storage
T
e
mperature Range
THERMAL CHARACTERISTICS (SOT
−
723) (DTA144EM3)
T
o
tal Device Dissipation
T , T
J
−
55 to +150
stg
P
D
T =
25
°
C
260
600
2.0
4.8
mW
A
Derate above 25
°
C
mW/
°
C
Thermal Resistance,
Junction to Ambient
R
480
205
°
C/W
°
C
q
JA
Junction and Storage
T
e
mperature Range
T , T
J
−
55 to +150
stg
2
2
3
MUN2113, MMUN2113L, MUN5113, DTA144EE, DTA144EM3, NSBA144EF3
Characteristic
THERMAL CHARACTERISTICS (SOT
−
1123) (NSBA144EF3)
T
o
tal Device Dissipation
Symbol
Max
Unit
P
D
T =
25
°
C
254
297
2.0
2.4
mW
A
Derate above 25
°
C
mW/
°
C
Thermal Resistance,
Junction to Ambient
R
493
421
°
C/W
°
C/W
°
C
q
JA
Thermal Resistance, Junction to Lead
R
193
q
JL
Junction and Storage
T
e
mperature Range
T , T
J
−
55 to +150
stg
1. FR
−
4 @ Minimum Pad.
2. FR
−
4 @ 1.0 x 1.0 Inch Pad.
2
2
3. FR
−
4 @ 100 mm
, 1 oz. copper traces, still air.
4. FR
−
4 @ 500 mm
, 1 oz. copper traces, still air.
Table 3. ELECTRICAL CHARACTERISTICS
(T =
25
°
C, unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector
−
Base Cutoff Current
I
I
nAdc
nAdc
mAdc
Vdc
CBO
(V =
50
V
, I
=
0
)
−
−
−
−
−
−
−
100
500
0.1
−
CB
E
Collector
−
Emitter Cutoff Current
(V =
50
V
, I
=
0
)
CEO
CE
B
Emitter
−
Base Cutoff Current
(V =
6.0
V
, I
=
0
)
I
EBO
−
EB
C
Collector
−
Base Breakdown Voltage
(I =
10
m
A, I
= 0)
V
V
(BR)CBO
(BR)CEO
50
50
C
E
(I =
2.0 mA, I
= 0)
Vdc
−
C
B
ON CHARACTERISTICS
h
FE
(I =
5.0 mA, V
= 10 V)
80
−
140
−
−
0.25
0.8
−
C
CE
(I =
10 mA, I
= 0.3 mA)
V
Vdc
Vdc
Vdc
Vdc
Vdc
k
W
CE(sat)
C
B
Input Voltage (off)
(V =
5.0
V
, I
=
1
00
m
A)
V
i(off)
i(on)
−
1.2
1.6
−
CE
C
Input Voltage (on)
(V =
0.3
V
, I
=
2
.0 mA)
V
3.0
−
CE
C
Output Voltage (on)
(V =
5.0
V
, V
=
3
.5
V
, R
=
1
.0 k
W
)
V
OL
0.2
CC
B
L
Output Voltage (off)
V
OH
(V =
5.0
V
, V
=
0
.5
V
, R
=
1
.0 k
W
)
4.9
32.9
0.8
−
−
CC
B
L
Input Resistor
Resistor Ratio
R1
R /R
47
1.0
61.1
1.2
1
2
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulsed
Condition: Pulse Width = 300 msec, Duty Cycle
≤
2%.
4
MUN2113, MMUN2113L, MUN5113, DTA144EE, DTA144EM3, NSBA144EF3
TYPICAL CHARACTERISTICS
MUN2113, MMUN2113L, MUN5113, DTA144EE, DTA144EM3
1
1000
I /I
= 10
C
B
T =
75
°
C
A
T =
−
25
°
C
A
25
°
C
25
°
C
−
25
°
C
75
°
C
100
0.1
0.01
10
0
10
20
30
40
1
10
100
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 2. V
CE(sat)
vs. I
C
Figure 3. DC Current Gain
10
9
100
T =
75
°
C
A
25
°
C
f = 10 kHz
= 0 A
T =
25
°
C
A
l
E
−
25
°
C
8
10
1
7
6
5
0.1
4
3
0.01
2
V
= 5 V
5
O
1
0
0.001
0
1
2
3
4
6
7
8
9
10
0
10
20
30
40
50
V ,
REVERSE VOLTAGE (V)
R
V ,
INPUT VOLTAGE (V)
in
Figure 4. Output Capacitance
Figure 5. Output Current vs. Input Voltage
100
V
O
= 2 V
T =
−
25
°
C
A
25
°
C
10
75
°
C
1
0.1
0
10
20
30
40
50
I ,
COLLECTOR CURRENT (mA)
C
Figure 6. Input Voltage vs. Output Current
5
MUN2113, MMUN2113L, MUN5113, DTA144EE, DTA144EM3, NSBA144EF3
TYPICAL CHARACTERISTICS
−
NSBA144EF3
1
1000
25
°
C
I /I
= 10
C
B
150
°
C
100
25
°
C
−
55
°
C
150
°
C
0.1
10
1
−
55
°
C
V
CE
= 10 V
0.01
0
10
20
30
40
50
0.1
1
10
100
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 7. V
CE(sat)
vs. I
C
Figure 8. DC Current Gain
7
6
100
10
150
°
C
f = 10 kHz
= 0 A
T =
25
°
C
A
−
55
°
C
I
E
5
4
3
2
25
°
C
1
0.1
0.01
1
0
V
O
= 5 V
24
0.001
0
10
20
30
40
50
0
4
8
12
16
20
28
V ,
REVERSE VOLTAGE (V)
R
V ,
INPUT VOLTAGE (V)
in
Figure 9. Output Capacitance
Figure 10. Output Current vs. Input Voltage
100
−
55
°
C
25
°
C
10
150
°
C
1
V
O
= 0.2 V
0.1
0
10
20
30
40
50
I ,
COLLECTOR CURRENT (mA)
C
Figure 11. Input Voltage vs. Output Current
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT
−
23 (TO
−
236)
CASE 318
−
08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
NOTES:
D
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
0.25
3
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
T
H
E
E
1
2
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
°
NOM
1.00
0.06
0.44
0.14
2.90
1.30
1.90
0.43
0.54
2.40
−−−
MAX
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
°
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
°
L
1.11
0.10
0.50
0.20
3.04
1.40
2.04
0.55
0.69
2.64
10
°
3X
b
L1
VIEW C
e
TOP VIEW
L1
A
H
E
T
c
A1
SEE VIEW C
SIDE VIEW
GENERIC
MARKING DIAGRAM*
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT
XXXM
G
G
1
3X
0.90
XXX = Specific Device Code
2.90
M
= Date Code
G
= Pb
−
Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present.
3X
0.95
0.80
PITCH
DIMENSIONS: MILLIMETERS
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
STYLE 7:
PIN 1.
EMITTER
2. BASE
STYLE 8:
PIN 1.
BASE
2. EMITTER
3. COLLECTOR
PIN 1.
ANODE
2. NO
CONNECTION
3. CATHODE
3. COLLECTOR
STYLE 9:
PIN 1.
ANODE
2. ANODE
STYLE 10:
STYLE 11:
STYLE 12:
STYLE 13:
PIN 1.
SOURCE
2. DRAIN
STYLE 14:
PIN 1.
CATHODE
2. GATE
PIN 1.
DRAIN
2. SOURCE
3. GATE
PIN 1.
ANODE
PIN 1.
CATHODE
2. CATHODE
3. ANODE
2. CATHODE
3. CATHODE
−
ANODE
3. CATHODE
3. GATE
3. ANODE
STYLE 15:
STYLE 16:
STYLE 17:
PIN 1.
NO CONNECTION
2. ANODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1.
GATE
2. CATHODE
3. ANODE
PIN 1.
ANODE
2. CATHODE
3. CATHODE
PIN 1.
NO CONNECTION
PIN 1.
CATHODE
PIN 1.
CATHODE
2. ANODE
3. GATE
2. CATHODE
3. ANODE
2. ANODE
3. CATHODE
−
ANODE
3. CATHODE
STYLE 21:
STYLE 22:
STYLE 23:
PIN 1.
ANODE
2. ANODE
STYLE 24:
STYLE 25:
STYLE 26:
PIN 1.
GATE
2. SOURCE
3. DRAIN
PIN 1.
RETURN
2. OUTPUT
3. INPUT
PIN 1.
GATE
2. DRAIN
PIN 1.
ANODE
2. CATHODE
3. GATE
PIN 1.
CATHODE
2. ANODE
3. SOURCE
3. NO
CONNECTION
3. CATHODE
STYLE 27:
STYLE 28:
PIN 1.
CATHODE
2. CATHODE
3. CATHODE
PIN 1.
ANODE
2. ANODE
3. ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT
−
23 (TO
−
236)
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC
−
59
CASE 318D
−
04
ISSUE H
DATE 28 JUN 2012
SCALE 2:1
D
NOTES:
1. DIMENSIONING
AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING
DIMENSION: MILLIMETER.
MILLIMETERS
INCHES
3
DIM
A
A1
b
c
D
E
e
L
MIN
1.00
0.01
0.35
0.09
2.70
1.30
1.70
0.20
2.50
NOM
1.15
0.06
0.43
0.14
2.90
1.50
1.90
0.40
2.80
MAX
MIN
NOM
0.045
0.002
0.017
0.005
0.114
0.059
0.075
0.016
0.110
MAX
0.051
0.004
0.020
0.007
0.122
0.067
0.083
0.024
0.118
E
1.30
0.10
0.50
0.18
3.10
1.70
2.10
0.60
3.00
0.039
0.001
0.014
0.003
0.106
0.051
0.067
0.008
0.099
H
E
1
2
b
e
H
E
C
GENERIC
MARKING DIAGRAM
A
L
A1
XXX M
G
G
SOLDERING FOOTPRINT*
1
0.95
0.037
0.95
0.037
XXX
M
= Specific Device Code
= Date Code
G
= Pb
−
Free Package*
(*Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present.
2.4
0.094
1.0
0.039
STYLE 1:
PIN 1.
BASE
2. EMITTER
3. COLLECTOR
STYLE 2:
PIN 1.
ANODE
2. N.C.
STYLE 3:
PIN 1.
ANODE
2. ANODE
0.8
mm
inches
3. CATHODE
3. CATHODE
ǒ
Ǔ
SCALE 10:1
0.031
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
STYLE 4:
STYLE 5:
STYLE 6:
PIN 1.
CATHODE
2. N.C.
3. ANODE
PIN 1.
CATHODE
2. CATHODE
3. ANODE
PIN 1.
ANODE
2. CATHODE
3. ANODE/CATHODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42664B
SC
−
59
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC
−
70 (SOT
−
323)
CASE 419
−
04
ISSUE N
DATE 11 NOV 2008
SCALE 4:1
NOTES:
1. DIMENSIONING
AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING
DIMENSION: INCH.
D
e1
MILLIMETERS
INCHES
DIM
A
A1
A2
b
c
D
E
e
e1
L
MIN
0.80
0.00
NOM
0.90
0.05
0.70 REF
0.35
0.18
2.10
1.24
1.30
MAX
1.00
0.10
MIN
0.032
0.000
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
MAX
0.040
0.004
3
E
H
E
1
2
0.30
0.10
1.80
1.15
1.20
0.40
0.25
2.20
1.35
1.40
0.012
0.004
0.071
0.045
0.047
0.016
0.010
0.087
0.053
0.055
b
e
0.65 BSC
0.38
2.10
0.026 BSC
0.015
0.083
0.20
2.00
0.56
2.40
0.008
0.079
0.022
0.095
H
E
c
A
A2
GENERIC
MARKING DIAGRAM
0.05 (0.002)
L
A1
XX M
G
SOLDERING FOOTPRINT*
G
0.65
1
0.025
0.65
0.025
XX
M
= Specific Device Code
= Date Code
G
= Pb
−
Free Package
1.9
0.075
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present.
0.9
0.035
0.7
0.028
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
STYLE 1:
STYLE 2:
PIN 1.
ANODE
2. N.C.
STYLE 3:
PIN 1.
BASE
2. EMITTER
3. COLLECTOR
STYLE 4:
STYLE 5:
CANCELLED
PIN 1.
CATHODE
2. CATHODE
3. ANODE
PIN 1.
ANODE
2. ANODE
3. CATHODE
3. CATHODE
STYLE 6:
STYLE 7:
PIN 1.
BASE
STYLE 8:
PIN 1.
GATE
STYLE 9:
STYLE 10:
PIN 1.
CATHODE
2. ANODE
STYLE 11:
PIN 1.
CATHODE
PIN 1.
EMITTER
2. BASE
3. COLLECTOR
PIN 1.
ANODE
2. CATHODE
3. CATHODE-ANODE
2. EMITTER
3. COLLECTOR
2. SOURCE
3. DRAIN
2. CATHODE
3. CATHODE
3. ANODE-CATHODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42819B
SC
−
70 (SOT
−
323)
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC
−
75/SOT
−
416
CASE 463
−
01
ISSUE G
3
2
1
DATE 07 AUG 2015
SCALE 4:1
NOTES:
−
E
−
1. DIMENSIONING
AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING
DIMENSION: MILLIMETER.
2
MILLIMETERS
DIM MIN
NOM MAX
0.70
A1
0.00
INCHES
NOM MAX
MIN
3
e
−
D
−
A
0.80
0.05
0.90 0.027
0.031 0.035
0.10 0.000
0.002 0.004
0.30 0.006
0.008 0.012
0.25 0.004
0.006 0.010
1.65 0.061
0.063 0.065
0.90 0.027
0.031 0.035
0.04 BSC
1
b
C
D
E
e
0.15
0.10
1.55
0.70
0.20
0.15
1.60
0.80
1.00 BSC
0.15
b
3 PL
0.20 (0.008)
M
D
0.20 (0.008)
E
H
E
L
0.10
1.50
0.20 0.004
0.006 0.008
1.70 0.060
0.063 0.067
H
1.60
E
C
A
GENERIC
MARKING DIAGRAM*
L
A1
XX M
G
STYLE 1:
STYLE 2:
STYLE 3:
PIN 1.
BASE
PIN 1.
ANODE
2. N/C
PIN 1.
ANODE
2. ANODE
2. EMITTER
3. COLLECTOR
1
3. CATHODE
3. CATHODE
XX
M
G
= Specific Device Code
= Date Code
= Pb
−
Free Package
STYLE 4:
STYLE 5:
PIN 1.
CATHODE
2. CATHODE
3. ANODE
PIN 1.
GATE
2. SOURCE
3. DRAIN
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present.
SOLDERING FOOTPRINT*
0.356
0.014
1.803
0.071
0.787
0.031
0.508
0.020
1.000
0.039
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB15184C
SC
−
75/SOT
−
416
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT
−
1123
CASE 524AA
ISSUE C
DATE 29
NOV 2011
SCALE 8:1
NOTES:
−
X
−
D
1. DIMENSIONING
AND TOLERANCING PER ASME
Y14.5M, 1994.
−
Y
−
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE
MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
1
2
3
E
TOP VIEW
MILLIMETERS
A
DIM MIN
MAX
0.40
0.28
0.20
0.17
0.85
0.65
0.40
1.05
A
b
0.34
0.15
b1
0.10
c
D
E
e
0.07
0.75
0.55
0.35
0.95
H
c
E
H
E
SIDE VIEW
L
0.185 REF
L2
0.05 0.15
b
3X
L2
GENERIC
MARKING DIAGRAM*
0.08 X
Y
e
X M
3X
L
2X
b1
X
M
= Specific Device Code
= Date Code
BOTTOM VIEW
*This information is generic. Please refer
to device data sheet for actual part
marking.
SOLDERING FOOTPRINT*
1.20
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present.
3X
0.34
0.26
1
0.38
2X
0.20
PACKAGE
OUTLINE
DIMENSIONS: MILLIMETERS
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
STYLE 1:
STYLE 2:
STYLE 3:
STYLE 4:
STYLE 5:
PIN 1.
BASE
PIN 1.
ANODE
2. N/C
PIN 1.
ANODE
2. ANODE
PIN 1.
CATHODE
2. CATHODE
3. ANODE
PIN 1.
GATE
2. EMITTER
3. COLLECTOR
2. SOURCE
3. DRAIN
3. CATHODE
3. CATHODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON23134D
SOT
−
1123, 3
−
LEAD, 1.0X0.6X0.37, 0.35P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT
−
723
CASE 631AA
−
01
ISSUE D
DATE 10 AUG 2009
SCALE 4:1
NOTES:
−
X
−
1. DIMENSIONING
AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
D
A
b1
−
Y
−
3
E
H
E
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
1
2
MILLIMETERS
2X
b
3X
C
DIM MIN
NOM
0.50
0.21
0.31
0.12
1.20
0.80
MAX
0.55
0.27
0.37
0.17
1.25
0.85
2X
e
0.08 X
Y
A
b
0.45
0.15
0.25
0.07
1.15
0.75
SIDE VIEW
TOP VIEW
b1
C
L
D
1
E
0.40 BSC
1.20
0.29 REF
0.20
e
H
E
L
1.15
0.15
1.25
0.25
L2
GENERIC
3X
L2
MARKING DIAGRAM*
BOTTOM VIEW
STYLE 1:
PIN 1.
BASE
STYLE 2:
PIN 1.
ANODE
2. N/C
STYLE 3:
STYLE 4:
STYLE 5:
PIN 1.
GATE
2. SOURCE
3. DRAIN
PIN 1.
ANODE
2. ANODE
PIN 1.
CATHODE
2. CATHODE
3. ANODE
XX M
1
2. EMITTER
3. COLLECTOR
3. CATHODE
3. CATHODE
XX
M
= Specific Device Code
= Date Code
RECOMMENDED
SOLDERING FOOTPRINT*
*This information is generic. Please refer
to device data sheet for actual part
marking. Pb
−
Free indicator, “G”, may
or not be present.
2X
0.40
2X
0.27
PACKAGE
OUTLINE
1.50
3X
0.52
0.36
DIMENSIONS: MILLIMETERS
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON12989D
SOT
−
723
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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