onsemi-MMUN2215LT1G
| Part # | onsemi-MMUN2215LT1G |
Download  | onsemi-MMUN2215LT1G |
MUN2215, MMUN2215L,
MUN5215, DTC114TE,
DTC114TM3, NSBC114TF3
Digital
T
r
ansistors (BRT)
R1 = 10 k
W
, R2 =
8
k
W
NPN Transistors with Monolithic Bias
Resistor Network
PIN CONNECTIONS
PIN 3
COLLECTOR
(OUTPUT)
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base−
emitter resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space.
PIN 1
BASE
(INPUT)
R1
R2
PIN 2
EMITTER
(GROUND)
Features
MARKING DIAGRAMS
•
Simplifies Circuit Design
•
Reduces Board Space
•
Reduces Component Count
•
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
SC−59
CASE 318D
STYLE 1
XX M
G
G
1
SOT−23
CASE 318
STYLE 6
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
XXX M
G
G
Compliant
1
MAXIMUM RATINGS
(T =
25
°
C)
A
SC−70/SOT−323
CASE 419
Rating
Symbol
Max
Unit
XX M
G
Collector−Base Voltage
V
50
Vdc
CBO
CEO
G
STYLE 3
1
Collector−Emitter Voltage
Collector Current − Continuous
Input Forward Voltage
V
50
100
40
6
Vdc
mAdc
Vdc
I
C
SC−75
CASE 463
STYLE 1
XX M
XX M
V
IN(fwd)
1
Input Reverse Voltage
V
IN(rev)
Vdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
SOT−723
CASE 631AA
STYLE 1
1
SOT−1123
CASE 524AA
STYLE 1
X M
1
XXX
M
G
=
=
=
Specific Device Code
Date Code*
Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
©
Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
November, 2016 − Rev. 2
DTC114T/D
MUN2215, MMUN2215L, MUN5215, DTC114TE, DTC114TM3, NSBC114TF3
Table 1. ORDERING INFORMATION
†
Device
Part Marking
Package
Shipping
MUN2215T1G
8E
SC−59
(Pb−Free)
3000 /
T
a
pe & Reel
MMUN2215
L
T
1G, SMMUN2215LT1G*
MUN5215T1G, SMUN5215T1G*
DTC114TET1G
A8E
8E
SOT−23
(Pb−Free)
3000 /
T
a
pe & Reel
3000 /
T
a
pe & Reel
3000 /
T
a
pe & Reel
8000 /
T
a
pe & Reel
8000 /
T
a
pe & Reel
SC−70/SOT−323
(Pb−Free)
8E
SC−75
(Pb−Free)
DTC114TM3T5G
8E
SOT−723
(Pb−Free)
NSBC114TF3T5G
K (90
°
)
SOT−1123
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
*S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
* (xx
°
) = Degree rotation in the clockwise direction.
300
250
(1) SC−75 and SC−70/SOT−323; Minimum Pad
200
(2) SC−59; Minimum Pad
(1) (2)
(3) (4)
(5)
(3) SOT−23; Minimum Pad
(4) SOT−1123; 100 mm
, 1 oz. copper trace
(5) SOT−723; Minimum Pad
2
150
100
50
0
−50 −25
0
25
50
75
100
125 150
AMBIENT TEMPERATURE (
°
C)
Figure 1. Derating Curve
2
MUN2215, MMUN2215L, MUN5215, DTC114TE, DTC114TM3, NSBC114TF3
Table 2. THERMAL CHARACTERISTICS
Characteristic
THERMAL CHARACTERISTICS (SC−59) (MUN2215)
T
o
tal Device Dissipation
Symbol
Max
Unit
P
D
T =
25
°
C
230
338
1.8
2.7
mW
A
Derate above 25
°
C
mW/
°
C
Thermal Resistance,
Junction to Ambient
R
540
370
°
C/W
°
C/W
°
C
q
JA
Thermal Resistance,
R
264
287
q
JL
Junction and Storage
T
e
mperature Range
THERMAL CHARACTERISTICS (SOT−23) (MMUN2215L)
T
o
tal Device Dissipation
T , T
J
−55 to +150
stg
P
D
T =
25
°
C
246
400
2.0
3.2
mW
A
Derate above 25
°
C
mW/
°
C
Thermal Resistance,
Junction to Ambient
(Note 1)
R
R
508
311
°
C/W
°
C/W
°
C
q
JA
Thermal Resistance,
174
208
q
JL
Junction and Storage
T
e
mperature Range
THERMAL CHARACTERISTICS (SC−70/SOT−323) (MUN5215)
T
o
tal Device Dissipation
T , T
J
−55 to +150
stg
P
D
T =
25
°
C
202
310
1.6
2.5
mW
A
Derate above 25
°
C
mW/
°
C
Thermal Resistance,
Junction to Ambient
R
R
618
403
°
C/W
°
C/W
°
C
q
JA
Thermal Resistance,
280
332
q
JL
Junction and Storage
T
e
mperature Range
THERMAL CHARACTERISTICS (SC−75) (DTC114TE)
T
o
tal Device Dissipation
T , T
J
−55 to +150
stg
P
D
T =
25
°
C
200
300
1.6
2.4
mW
A
Derate above 25
°
C
mW/
°
C
Thermal Resistance,
Junction to Ambient
R
600
400
°
C/W
°
C
q
JA
Junction and Storage
T
e
mperature Range
THERMAL CHARACTERISTICS (SOT−723) (DTC114TM3)
T
o
tal Device Dissipation
T , T
J
−55 to +150
stg
P
D
T =
25
°
C
260
600
2.0
4.8
mW
A
Derate above 25
°
C
mW/
°
C
Thermal Resistance,
Junction to Ambient
R
480
205
°
C/W
°
C
q
JA
Junction and Storage
T
e
mperature Range
T , T
J
−55 to +150
stg
1.
FR−4 @ Minimum Pad.
2.
FR−4 @ 1.0 x 1.0 Inch Pad.
2
2
3
MUN2215, MMUN2215L, MUN5215, DTC114TE, DTC114TM3, NSBC114TF3
Characteristic
THERMAL CHARACTERISTICS (SOT−1123) (NSBC114TF3)
T
o
tal Device Dissipation
Symbol
Max
Unit
P
D
T =
25
°
C
254
297
2.0
2.4
mW
A
Derate above 25
°
C
mW/
°
C
Thermal Resistance,
Junction to Ambient
R
493
421
°
C/W
°
C/W
°
C
q
JA
Thermal Resistance, Junction to Lead
R
193
q
JL
Junction and Storage
T
e
mperature Range
T , T
J
−55 to +150
stg
1. FR−4
@ Minimum Pad.
2. FR−4
@ 1.0 x 1.0 Inch Pad.
2
3. FR−4
@ 100 mm
, 1 oz. copper traces, still air.
2
4. FR−4
@ 500 mm
, 1 oz. copper traces, still air.
Table 3. ELECTRICAL CHARACTERISTICS
(T =
25
°
C, unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current
I
I
nAdc
nAdc
mAdc
Vdc
CBO
(V =
50
V
, I
=
0
)
−
−
−
−
−
−
−
100
500
0.9
−
CB
E
Collector−Emitter Cutoff Current
(V =
50
V
, I
=
0
)
CEO
CE
B
Emitter−Base Cutoff Current
(V =
6.0
V
, I
=
0
)
I
EBO
−
EB
C
Collector−Base Breakdown Voltage
(I =
10
m
A, I
= 0)
V
V
(BR)CBO
(BR)CEO
50
50
C
E
(I =
2.0 mA, I
= 0)
Vdc
−
C
B
ON CHARACTERISTICS
h
FE
(I =
5.0 mA, V
= 10 V)
160
−
350
−
−
0.25
0.5
−
C
CE
(I =
10 mA, I
= 1.0 mA)
V
Vdc
Vdc
Vdc
Vdc
Vdc
k
W
CE(sat)
C
B
Input Voltage (off)
(V =
5.0
V
, I
=
1
00
m
A)
V
i(off)
i(on)
−
0.6
1.2
−
CE
C
Input Voltage (on)
(V =
0.3
V
, I
=
1
0 mA)
V
1.7
−
CE
C
Output Voltage (on)
(V =
5.0
V
, V
=
2
.5
V
, R
=
1
.0 k
W
)
V
OL
0.2
CC
B
L
Output Voltage (off)
V
OH
(V =
5.0
V
, V
=
0
.25
V
, R
=
1
.0 k
W
)
4.9
7.0
−
−
10
−
−
13
−
CC
B
L
Input Resistor
Resistor Ratio
R1
R /R
1
2
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulsed
Condition: Pulse Width = 300 msec, Duty Cycle
≤
2%.
4
MUN2215, MMUN2215L, MUN5215, DTC114TE, DTC114TM3, NSBC114TF3
TYPICAL CHARACTERISTICS
MUN2215, MMUN2215L, MUN5215, DTC114TE, DTC114TM3
1
1000
V
CE
= 10 V
I /I
= 10
C
B
75
°
C
25
°
C
T =
−25
°
C
A
75
°
C
100
0.1
−25
°
C
25
°
C
0.01
10
1
0.001
0
20
30
40
50
1
10
100
10
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 2. V
CE(sat)
vs. I
C
Figure 3. DC Current Gain
100
10
1
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
75
°
C
f = 10 kHz
= 0 A
T =
25
°
C
A
I
E
25
°
C
T =
−25
°
C
A
0.1
0.01
V
O
= 5 V
0.001
0
0
0
1
2
3
4
5
6
7
8
9
10
5
10 15 20 25 30 35 40 45 50
V ,
INPUT VOLTAGE (V)
in
V ,
REVERSE VOLTAGE (V)
R
Figure 4. Output Capacitance
Figure 5. Output Current vs. Input Voltage
10
T =
−25
°
C
A
1
25
°
C
75
°
C
V
O
= 0.2 V
40
0.1
0
10
20
30
50
I ,
COLLECTOR CURRENT (mA)
C
Figure 6. Input Voltage vs. Output Current
5
MUN2215, MMUN2215L, MUN5215, DTC114TE, DTC114TM3, NSBC114TF3
TYPICAL CHARACTERISTICS − NSBC114TF3
1
1000
25
°
C
I /I
= 10
C
B
150
°
C
−55
°
C
100
150
°
C
25
°
C
0.1
10
1
−55
°
C
V
CE
= 10 V
0.01
0
10
20
30
40
50
1
10
100
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 7. V
CE(sat)
vs. I
C
Figure 8. DC Current Gain
2.4
2.0
100
10
150
°
C
f = 10 kHz
= 0 A
T =
25
°
C
A
−55
°
C
I
E
1.6
1.2
0.8
25
°
C
1
0.1
0.01
0.4
0
V
O
= 5 V
6
0.001
0
10
20
30
40
50
0
1
2
3
4
5
7
V ,
REVERSE VOLTAGE (V)
R
V ,
INPUT VOLTAGE (V)
in
Figure 9. Output Capacitance
Figure 10. Output Current vs. Input Voltage
100
10
25
°
C
−55
°
C
1
150
°
C
V
O
= 0.2 V
0.1
0
10
20
30
40
50
I ,
COLLECTOR CURRENT (mA)
C
Figure 11. Input Voltage vs. Output Current
6
MUN2215, MMUN2215L, MUN5215, DTC114TE, DTC114TM3, NSBC114TF3
PACKAGE DIMENSIONS
SC−59
CASE 318D−04
ISSUE H
D
NOTES:
1. DIMENSIONING
AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING
DIMENSION: MILLIMETER.
MILLIMETERS
INCHES
NOM
3
DIM
A
A1
b
c
D
E
e
L
MIN
1.00
0.01
0.35
0.09
2.70
1.30
1.70
0.20
2.50
NOM
1.15
0.06
0.43
0.14
2.90
1.50
1.90
0.40
2.80
MAX
MIN
MAX
0.051
0.004
0.020
0.007
0.122
0.067
0.083
0.024
0.118
E
1.30
0.10
0.50
0.18
3.10
1.70
2.10
0.60
3.00
0.039
0.001
0.014
0.003
0.106
0.051
0.067
0.008
0.099
0.045
0.002
0.017
0.005
0.114
0.059
0.075
0.016
0.110
H
E
1
2
b
e
H
E
STYLE 1:
PIN 1.
BASE
2. EMITTER
3. COLLECTOR
C
A
L
A1
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.4
0.094
1.0
0.039
0.8
0.031
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
7
MUN2215, MMUN2215L, MUN5215, DTC114TE, DTC114TM3, NSBC114TF3
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
NOTES:
D
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
0.25
3
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
T
H
E
E
1
2
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
°
NOM
1.00
0.06
0.44
0.14
2.90
1.30
1.90
0.43
0.54
2.40
−−−
MAX
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
°
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
°
L
1.11
0.10
0.50
0.20
3.04
1.40
2.04
0.55
0.69
2.64
10
°
3X
b
L1
VIEW C
e
TOP VIEW
A
H
E
T
c
A1
STYLE 6:
SEE VIEW C
SIDE VIEW
PIN 1.
BASE
2. EMITTER
3. COLLECTOR
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
3X
2.90
0.90
3X
0.95
0.80
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
8
MUN2215, MMUN2215L, MUN5215, DTC114TE, DTC114TM3, NSBC114TF3
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
NOTES:
1. DIMENSIONING
AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING
DIMENSION: INCH.
D
e1
MILLIMETERS
INCHES
DIM
A
A1
A2
b
c
D
E
e
MIN
0.80
0.00
NOM
0.90
0.05
0.70 REF
0.35
0.18
2.10
1.24
1.30
0.65 BSC
MAX
1.00
0.10
MIN
0.032
0.000
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
MAX
0.040
0.004
3
E
H
E
1
2
0.30
0.10
1.80
1.15
1.20
0.40
0.25
2.20
1.35
1.40
0.012
0.004
0.071
0.045
0.047
0.016
0.010
0.087
0.053
0.055
b
e
e1
L
H
E
0.38
2.10
0.015
0.083
0.20
2.00
0.56
2.40
0.008
0.079
0.022
0.095
STYLE 3:
c
PIN 1.
BASE
2. EMITTER
3. COLLECTOR
A
A2
0.05 (0.002)
L
A1
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
9
MUN2215, MMUN2215L, MUN5215, DTC114TE, DTC114TM3, NSBC114TF3
PACKAGE DIMENSIONS
SC−75/SOT−416
CASE 463
ISSUE G
NOTES:
−E−
1. DIMENSIONING
AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING
DIMENSION: MILLIMETER.
2
MILLIMETERS
DIM MIN
NOM MAX
0.70
A1
0.00
INCHES
NOM MAX
3
MIN
e
−D−
A
0.80
0.05
0.90 0.027
0.031 0.035
0.10 0.000
0.002 0.004
0.30 0.006
0.008 0.012
0.25 0.004
0.006 0.010
1.65 0.061
0.063 0.065
0.90 0.027
0.031 0.035
0.04 BSC
1
b
3 PL
0.20 (0.008)
b
C
D
E
e
0.15
0.10
1.55
0.70
0.20
0.15
1.60
0.80
1.00 BSC
0.15
1.60
M
D
0.20 (0.008)
E
H
E
L
0.10
1.50
0.20 0.004
0.006 0.008
1.70 0.060
0.063 0.067
H
E
STYLE 1:
PIN 1.
BASE
2. EMITTER
3. COLLECTOR
C
A
L
A1
SOLDERING FOOTPRINT*
0.356
0.014
1.803
0.071
0.787
0.031
0.508
0.020
1.000
0.039
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
10
MUN2215, MMUN2215L, MUN5215, DTC114TE, DTC114TM3, NSBC114TF3
PACKAGE DIMENSIONS
SOT−723
CASE 631AA
ISSUE D
NOTES:
−X−
1. DIMENSIONING
AND TOLERANCING PER ASME
D
Y14.5M, 1994.
A
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
b1
−Y−
3
E
H
E
1
2
MILLIMETERS
DIM MIN
2X
b
3X
C
NOM
0.50
0.21
0.31
0.12
MAX
0.55
0.27
0.37
0.17
1.25
0.85
2X
e
0.08 X
Y
A
b
b1
C
D
E
0.45
0.15
0.25
0.07
1.15
0.75
SIDE VIEW
TOP VIEW
L
1.20
0.80
1
0.40 BSC
e
H
E
L
L2
1.15
0.15
1.20
0.29 REF
0.20
1.25
0.25
STYLE 1:
PIN 1.
BASE
2. EMITTER
3. COLLECTOR
3X
L2
BOTTOM VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
2X
0.40
2X
0.27
PACKAGE
OUTLINE
1.50
3X
0.52
0.36
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
11
MUN2215, MMUN2215L, MUN5215, DTC114TE, DTC114TM3, NSBC114TF3
PACKAGE DIMENSIONS
SOT−1123
CASE 524AA
ISSUE C
NOTES:
−X−
D
1. DIMENSIONING
AND TOLERANCING PER ASME
Y14.5M, 1994.
−Y−
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE
MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
1
2
3
E
TOP VIEW
MILLIMETERS
A
DIM MIN
MAX
0.40
0.28
0.20
0.17
0.85
0.65
0.40
1.05
A
b
0.34
0.15
b1
0.10
c
D
E
e
0.07
0.75
0.55
0.35
0.95
H
c
E
H
E
SIDE VIEW
L
0.185 REF
L2
0.05
0.15
STYLE 1:
PIN 1.
BASE
b
3X
L2
2. EMITTER
3. COLLECTOR
0.08 X Y
e
3X
L
2X
b1
BOTTOM VIEW
SOLDERING FOOTPRINT*
1.20
3X
0.34
0.26
1
0.38
2X
0.20
PACKAGE
OUTLINE
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
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