onsemi-MPSA29-D26Z
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MPSA29
NPN Darlington Transistor
Description
This device is designed for applications requiring extremely
high current gain at collector currents to 500 mA. Sourced
from process 03. See MPSA28 for characteristics.
TO-92
1. Emitter
2. Base
3. Collector
1
1
2
2
3
3
Straight Lead
Bulk Packing
Bent Lead
Tape & Reel
Ammo Packing
Ordering Information
Part Number
MPSA29
Top Mark
MPSA29
MPSA29
Package
Packing Method
TO-92 3L
TO-92 3L
Bulk
MPSA29
–
D26Z
T
a
pe and Reel
Absolute Maximum Ratings
(1), (2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
CEO
V
CBO
V
EBO
I
C
Parameter
Value
100
Unit
V
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
100
V
12
V
Collector Current – Continuous
800
mA
°
C
T
J
, T
STG
Operating and Storage Junction
T
e
mperature Range
Notes:
1.
These ratings are based on a maximum junction temperature of 150
°
C.
-55 to +150
2.
These are steady-state limits.
ON
Semiconductor should be consulted on applications involving pulsed or low-
duty-cycle operations.
Publication Order Number:
MPSA29/D
© 1997
Semiconductor Components Industries, LLC.
October-2017,
Rev.
2
Thermal Characteristics
(3)
Values are at T
A
= 25°C unless otherwise noted.
Symbol
Parameter
Max.
625
5.0
Unit
mW
T
o
tal Device Dissipation
P
D
Derate Above 25
°
C
mW/
°
C
°
C/W
°
C/W
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
83.3
200
Note:
3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
(4)
Values are at T
A
= 25°C unless otherwise noted.
Symbol
BV
CEO
BV
CBO
BV
EBO
I
CBO
Parameter
Conditions
Min.
100
100
12
Max.
Unit
V
Collector-Emitter Breakdown Voltage
I
C
= 100
μ
A, I
B
= 0
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
I
C
= 100
μ
A, I
E
= 0
I
E
= 10
μ
A, I
C
= 0
V
CB
= 80 V, I
E
= 0
V
CE
= 80 V, I
E
= 0
V
EB
= 10 V, I
C
= 0
V
V
100
500
100
nA
nA
nA
I
CES
Collector Cut-Off Current
I
EBO
Emitter Cut-Off Current
V
CE
= 5.0
V
,
I
C
= 10 mA
10,000
10,000
h
FE
DC Current Gain
V
CE
= 5.0
V
,
I
C
= 100 mA
I
C
= 10 mA, I
B
= 0.01 mA
I
C
= 100 mA, I
B
= 0.1 mA
I
C
= 100 mA, V
CE
= 5.0V
1.2
1.5
2.0
V
CE
(sat) Collector-Emitter
Saturation Voltage
V
V
BE
(on)
f
T
Base-Emitter On Voltage
V
I
C
= 10 mA, V
CE
= 5.0
V
,
f = 100 MHz
Current Gain – Bandwidth Product
125
MHz
V
CB
= 10
V
,
I
E
= 0,
f = 1.0 MHz
C
obo
Output Capacitance
8.0
pF
Note:
4. Pulse test: pulse width
≤
300
μ
s, duty cycle
≤
2.0%
2
Physical Dimensions
(Continued)
Figure 2. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form, Ammo, Tape and Reel Type
4
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