onsemi-MPSA65

MPSA65  

MMBTA65  

PZTA65  

C

C

E

E

C

B

TO-92  

C

B

SOT-23  

Mark: 2W  

B

SOT-223  

E

PNP Darlington Transistor  

This device is designed for applications requiring extremely high  

current gain at currents to 800 mA.

 

Sourced from Process 61.  

See MPSA64 for characteristics.  

Absolute Maximum Ratings*  

TA = 25°C unless otherwise noted  

Symbol  

Parameter  

Value  

Units  

V

CES  

V

CBO  

V

EBO  

I

C  

Collector-Emitter Voltage  

30  

V

V

V

A

Collector-Base Voltage  

30  

10  

Emitter-Base Voltage  

Collector Current – Continuous  

Operating and Storage Junction Temperature Range  

1.2  

-55 to +150  

C

°

T

J

, T

stg  

*

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  

NOTES

:  

1)

These ratings are based on a maximum junction temperature of 150 degrees C.  

2)

These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  

Thermal Characteristics  

TA = 25°C unless otherwise noted  

Symbol  

Characteristic  

Max  

Units  

MPSA65  

*MMBTA65  

**PZTA65  

P

D  

Total Device Dissipation  

Derate above 25

°

C  

Thermal Resistance, Junction to Case  

625  

5.0  

83.3  

350  

2.8  

1,000  

8.0  

mW  

mW/

°

C  

°

C/W  

R

θ

JC  

R

θ

JA  

Thermal Resistance, Junction to Ambient  

200  

357  

125  

°

C/W  

*

Device mounted on FR-4 PCB 1.6″ X 1.6″ X 0.06.”  

**

Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm

2

.  

A65, Rev A  

1997 Fairchild Semiconductor Corporation  

PNP Darlington Transistor  

(continued)  

Electrical Characteristics  

TA = 25°C unless otherwise noted  

Symbol  

Parameter  

Test Conditions  

Min  

Max  

Units  

OFF CHARACTERISTICS  

V

(BR)CES  

Collector-Emitter Breakdown  

30  

V

I

C

= 100

µ

A, I

B

= 0  

Voltage  

I

CBO  

I

EBO  

Collector-Cutoff Current  

V

CB

= 30 V, I

E

= 0  

V

EB

= 8.0 V, I

C

= 0  

100  

100  

nA  

nA  

Emitter-Cutoff Current  

ON CHARACTERISTICS*  

h

FE  

DC Current Gain  

I

C

= 10 mA, V

CE

= 5.0 V  

I

C

= 100 mA, V

CE

= 5.0 V  

50,000  

20,000  

Collector-Emitter Saturation Voltage

 

I

C

= 100 mA, I

B

= 0.1 mA  

1.5  

2.0  

V

V

V

CE(

sat

)  

V

BE(

on

)  

Base-Emitter On Voltage  

I

C

= 100 mA, V

CE

= 5.0 V  

SMALL SIGNAL CHARACTERISTICS  

f

T  

Current Gain – Bandwidth Product  

I

C

= 10 mA, V

CE

= 5.0 V,  

f = 100 MHz  

100  

MHz  

*

Pulse Test: Pulse Width

≤

300

µ

s, Duty Cycle

≤

2.0%  

TRADEMARKS  

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is  

not intended to be an exhaustive list of all such trademarks.  

PowerTrench  

QFET™  

QS™  

SyncFET™  

TinyLogic™  

UHC™  

ACEx™  

FASTr™  

GlobalOptoisolator™  

GTO™  

Bottomless™  

CoolFET™  

CROSSVOLT

™  

DOME™  

QT Optoelectronics™  

VCX™  

HiSeC™  

Quiet Series™  

SILENT SWITCHER  

SMART START™  

SuperSOT™-3  

SuperSOT™-6  

SuperSOT™-8  

ISOPLANAR™  

MICROWIRE™  

OPTOLOGIC™  

OPTOPLANAR™  

PACMAN™  

POP™  

E

2

CMOS

TM  

EnSigna

TM  

FACT™  

FACT Quiet Series™  

FAST  

DISCLAIMER  

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER  

NOTICE T

O

A

NY PRODUCTS HEREIN TO IMPROVE RELIABILIT

Y

,

F

UNCTION OR DESIGN. FAIRCHILD  

DOES NO

T

A

SSUM

E

A

NY LIABILIT

Y

A

RISING OUT OF TH

E

A

PPLICATION OR USE O

F

A

NY PRODUCT  

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT  

RIGHTS, NOR THE RIGHTS OF OTHERS.  

LIFE SUPPORT POLICY  

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  

DEVICES OR SYSTEMS WITHOU

T

T

HE EXPRESS WRITTE

N

A

PPROVA

L

O

F FAIRCHILD SEMICONDUCTOR CORPORATION.  

As used herein:  

1. Life support devices or systems are devices or  

systems which, (a) are intended for surgical implant into  

the body, or (b) support or sustain life, or (c) whose  

failure to perform when properly used in accordance  

with instructions for use provided in the labeling, can be  

reasonably expected to result in significant injury to the  

user.  

2. A critical component is any component of a life  

support device or system whose failure to perform can  

be reasonably expected to cause the failure of the life  

support device or system, or to affect its safety or  

effectiveness.  

PRODUCT STATUS DEFINITIONS  

Definition of Terms  

Datasheet Identification  

Product Status  

Definition  

Advance Information  

Formative or  

In Design  

This datasheet contains the design specifications for  

product development. Specifications may change in  

any manner without notice.  

Preliminary  

First Production  

This datasheet contains preliminary data, and  

supplementary data will be published at a later date.  

Fairchild Semiconductor reserves the right to make  

changes at any time without notice in order to improve  

design.  

No Identification Needed  

Obsolete  

Full Production  

This datasheet contains final specifications. Fairchild  

Semiconductor reserves the right to make changes at  

any time without notice in order to improve design.  

Not In Production  

This datasheet contains specifications on a product  

that has been discontinued by Fairchild semiconductor.  

The datasheet is printed for reference information only.  

Rev. G