onsemi-MPSW51
| Part # | onsemi-MPSW51 |
Download  | onsemi-MPSW51 |
MPSW51, MPSW51A
One Watt High Current
Transistors
PNP Silicon
Features
•
These Devices are Pb
−
Free and are RoHS Compliant*
COLLECTOR
3
2
MAXIMUM RATINGS
BASE
Rating
Symbol
Value
Unit
Collecto
r
−
Emitter Voltage
V
CEO
V
CBO
V
EBO
Vdc
1
MPSW51
−
30
−
40
EMITTER
MPSW51A
Collecto
r
−
Base Voltage
Vdc
MPSW51
MPSW51A
−
40
−
50
Emitte
r
−
Base Voltage
−
5.0
Vdc
Collector Current
−
Continuous
I
C
−
1000
mAdc
T
o
tal Device Dissipation @ T
= 25
°
C
P
D
1.0
8.0
mW
mW/
°
C
A
Derate above 25
°
C
TO
−
92 1 WATT
(TO
−
226)
CASE 29
−
10
STYLE 1
T
o
tal Device Dissipation @ T
= 25
°
C
P
2.5
20
W
C
D
1
2
3
1
Derate above 25
°
C
mW/
°
C
2
3
STRAIGHT LEAD
Operating and Storage Junction
T
e
mperature Range
T , T
J
−
55 to +150
°
C
BENT LEAD
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
125
50
Unit
°
C/W
°
C/W
MARKING DIAGRAM
Thermal Resistance, Junction
−
to
−
Ambient
Thermal Resistance, Junction
−
to
−
Case
R
q
JA
R
q
JC
MPS
W51x
AYW
W
G
G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
x
A
Y
= 51A Devices
= Assembly Location
=
Y
e
ar
WW =
Work Week
G
= Pb
−
Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
*For additional information on our Pb
−
Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting
T
e
chniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
June, 2013
−
Rev. 5
MPSW51/D
MPSW51, MPSW51A
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
V
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
(I =
−
1.0 mAdc, I
= 0)
MPSW51
−
30
−
40
−
−
C
B
MPSW51A
Collecto
r
−
Base Breakdown Voltage
(I =
−
100
m
Adc, I
= 0)
V
V
Vdc
MPSW51
MPSW51A
−
40
−
50
−
−
C
E
Emitte
r
−
Base Breakdown Voltage
(I =
−
100
m
Adc, I
= 0)
Vdc
−
5.0
−
E
C
Collector Cutoff Current
(V =
−
30 Vdc, I
= 0)
I
m
Adc
CBO
MPSW51
MPSW51A
−
−
−
0.1
−
0.1
CB
E
(V =
−
40 Vdc, I
= 0)
CB
E
Emitter Cutoff Current
I
m
Adc
EBO
(V =
−
3.0 Vdc, I
= 0)
−
−
0.1
EB
C
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I =
−
10 mAdc, V
=
−
1.0 Vdc)
55
60
50
−
−
−
C
CE
(I =
−
100 mAdc, V
=
−
1.0 Vdc)
C
CE
CE
(I =
−
1000 mAdc, V
=
−
1.0 Vdc)
C
Collecto
r
−
Emitter Saturation Voltage
(I =
−
1000 mAdc, I
=
−
100 mAdc)
V
Vdc
Vdc
CE(sat)
−
−
−
0.7
−
1.2
C
B
Bas
e
−
Emitter On Voltage
(I =
−
1000 mAdc, V
=
−
1.0 Vdc)
V
BE(on)
C
CE
SMALL
−
SIGNAL CHARACTERISTICS
Current
−
Gain
−
Bandwidth Product
f
MHz
pF
T
(I =
−
50 mAdc, V
=
−
10 Vdc, f = 20 MHz)
50
−
C
CE
Output Capacitance
C
obo
(V =
−
10 Vdc, I
= 0, f = 1.0 MHz)
−
30
CB
E
1. Pulse
T
e
st: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
ORDERING INFORMATION
Device
†
Package
Shipping
MPSW51G
TO
−
92
5000 Units / Bulk
5000 Units / Bulk
2000 /
T
a
pe & Reel
2000 /
T
a
pe & Reel
2000 / Ammo Pack
(Pb
−
Free)
MPSW51AG
TO
−
92
(Pb
−
Free)
MPSW51RLRAG
MPSW51ARLRAG
MPSW51ARLRPG
TO
−
92
(Pb
−
Free)
TO
−
92
(Pb
−
Free)
TO
−
92
(Pb
−
Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
2
MPSW51, MPSW51A
TYPICAL CHARACTERISTICS
-1.0
200
I
=
I
=
I
=
I
=
C
C
I =
C
-1000 mA
I
=
C
-500 mA
C
-50 mA
C
-10 mA
-0.8
-0.6
-0.4
-250
mA
-100
mA
100
70
V
= -1.0 V
CE
T =
25
°
C
50
J
-0.2
0
T =
25
°
C
J
20
-10
-20
-50
-100
-200
-500
-1000
-0.01 -0.02 -0.05 -0.1
-0.2 -0.5 -1.0 -2.0
-5.0 -10 -20
-50 -100
I ,
COLLECTOR CURRENT (mA)
C
I ,
BASE CURRENT (mA)
B
Figure 1. DC Current Gain
Figure 2. Collector Saturation Region
-1.0
-0.8
-0.6
-0.4
-0.2
-0.8
-1.2
-1.6
-2.0
T =
25
°
C
J
V
@ I
/I =
10
C B
BE(SAT)
V
@ V
= -1.0 V
CE
BE(ON)
q
V for
V
BE
B
-2.4
-2.8
V
@ I
/I =
10
C B
CE(SAT)
0
-1.0 -2.0
-5.0 -10 -20
-50 -100
-200
-500 -1000
-1.0 -2.0
-5.0 -10 -20
-50 -100
-200
-500 -1000
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 3. “ON” Voltages
Figure 4. Temperature Coefficient
3
MPSW51, MPSW51A
TYPICAL CHARACTERISTICS
300
200
160
120
80
T =
25
°
C
J
V
= -10 V
CE
T =
25
°
C
100
70
J
f = 20 MHz
C
ibo
40
0
50
C
obo
30
-10
-20
-50
-100
-200
-500
-1000
C
C
-5.0
-1.0
-10
-2.0
-15
-3.0
-20
-4.0
-25
-5.0
obo
ibo
I ,
COLLECTOR CURRENT (mA)
C
V ,
REVERSE VOLTAGE (VOLTS)
R
Figure 5. Current Gain — Bandwidth Product
Figure 6. Capacitance
-1.0 k
-500
1.0 ms
1.0 ms
100
m
s
T =
25
°
C
A
T
= 25
°
C
C
-200
-100
-50
DUTY CYCLE
≤
10%
MPSW51
MPSW51A
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
-20
-10
-1.0
-2.0
-5.0 -10
-20 -30
-40
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
V
CE
Figure 7. Active Region — Safe Operating
Area
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO
−
92 (TO
−
226) 1 WATT
CASE 29
−
10
SCALE 1:1
ISSUE D
DATE 05 MAR 2021
1
1
2
2
3
STRAIGHT LEAD
3
BENT LEAD
STYLES AND MARKING ON PAGE 3
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON52857E
TO
−
92 (TO
−
226) 1 WATT
PAGE 1 OF 3
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO
−
92 (TO
−
226) 1 WATT
CASE 29
−
10
ISSUE D
DATE 05 MAR 2021
STYLES AND MARKING ON PAGE 3
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON52857E
TO
−
92 (TO
−
226) 1 WATT
PAGE 2 OF 3
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
TO
−
92 (TO
−
226) 1 WATT
CASE 29
−
10
ISSUE D
DATE 05 MAR 2021
STYLE 2:
PIN 1.
BASE
2. EMITTER
3. COLLECTOR
STYLE 3:
STYLE 4:
PIN 1.
CATHODE
STYLE 5:
STYLE 1:
PIN 1.
EMITTER
PIN 1.
ANODE
2. ANODE
3. CATHODE
PIN 1.
DRAIN
2. SOURCE
3. GATE
2. CATHODE
3. ANODE
2. BASE
3. COLLECTOR
STYLE 8:
STYLE 9:
STYLE 10:
STYLE 7:
STYLE 6:
PIN 1.
GATE
PIN 1.
DRAIN
2. GATE
PIN 1.
BASE 1
2. EMITTER
3. BASE
2
PIN 1.
CATHODE
2. GATE
PIN 1.
SOURCE
2. DRAIN
2. SOURCE
& SUBSTRATE
3. DRAIN
3. SOURCE
& SUBSTRATE
3. ANODE
3. GATE
STYLE 13:
STYLE 14:
STYLE 15:
STYLE 12:
STYLE 11:
PIN 1.
ANODE
PIN 1.
ANODE 1
2. GATE
PIN 1.
EMITTER
2. COLLECTOR
3. BASE
PIN 1.
ANODE 1
2. CATHODE
3. ANODE
2
PIN 1.
MAIN TERMINAL 1
2. GATE
2. CATHODE
& ANODE
3. CATHODE
3. CATHODE
2
3. MAIN
TERMINAL 2
STYLE 18:
STYLE 19:
STYLE 20:
STYLE 17:
STYLE 16:
PIN 1.
ANODE
PIN 1.
ANODE
PIN 1.
GATE
2. ANODE
PIN 1.
NOT CONNECTED
2. CATHODE
PIN 1.
COLLECTOR
2. BASE
2. CATHODE
2. GATE
3. NOT
CONNECTED
3. CATHODE
3. ANODE
3. EMITTER
3. CATHODE
STYLE 23:
PIN 1.
GATE
2. SOURCE
3. DRAIN
STYLE 24:
STYLE 25:
PIN 1.
MT 1
2. GATE
3. MT
2
STYLE 22:
STYLE 21:
PIN 1.
EMITTER
2. COLLECTOR/ANODE
3. CATHODE
PIN 1.
SOURCE
2. GATE
PIN 1.
COLLECTOR
2. EMITTER
3. DRAIN
3. BASE
STYLE 28:
STYLE 29:
STYLE 30:
STYLE 27:
PIN 1.
MT
2. SUBSTRATE
3. MT
STYLE 26:
PIN 1.
PIN 1.
CATHODE
2. ANODE
PIN 1.
NOT CONNECTED
2. ANODE
PIN 1.
DRAIN
2. GATE
V
CC
2. GROUND
2
3. OUTPUT
3. GATE
3. CATHODE
3. SOURCE
STYLE 33:
STYLE 34:
STYLE 35:
STYLE 32:
PIN 1.
BASE
2. COLLECTOR
3. EMITTER
STYLE 31:
PIN 1.
GATE
PIN 1.
RETURN
2. INPUT
PIN 1.
INPUT
2. GROUND
3. LOGIC
PIN 1.
GATE
2. COLLECTOR
3. EMITTER
2. DRAIN
3. OUTPUT
3. SOURCE
GENERIC
MARKING DIAGRAM*
XXXXX
XXXXX
ALYW
G
G
XXXX = Specific Device Code
A
L
= Assembly Location
= Wafer Lot
Y
W
G
=
Y
e
ar
= Work Week
= Pb
−
Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON52857E
TO
−
92 (TO
−
226) 1 WATT
PAGE 3 OF 3
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
onsemi
,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates
and/or subsidiaries in the United States and/or other countries.
onsemi
owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of
onsemi
’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
.
onsemi
reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as
−
is” and
onsemi
makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does
onsemi
assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using
onsemi
products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by
onsemi
. “Typical” parameters which may be provided in
onsemi
data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
onsemi
does not convey any license
under any of its intellectual property rights nor the rights of others.
onsemi
products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use
onsemi
products for any such unintended or unauthorized application, Buyer shall indemnify and hold
onsemi
and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that
onsemi
was negligent regarding the design or manufacture of the part.
onsemi
is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS
:
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